Datasheet VS-20ETS12S-M3 Specification

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3
Anode
1
Anode
Base
cathode
2
D2PAK (TO-263AB)
1
2
3
High Voltage Surface Mount Input Rectifier Diode, 20 A
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
at I
F
F
I
FSM
T
max. 150 °C
J
Package D
Circuit configuration Single
2
VS-20ETS08S-M3, VS-20ETS12S-M3 Series
Vishay Semiconductors
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
20 A
800 V, 1200 V
1.1 V
300 A
PAK (TO-263AB)
• Vishay Semiconductors switches and output rectifiers which are available in identical package outlines
DESCRIPTION
The VS-20ETS...S-M3 rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T common heatsink of 1 °C/W
= 55 °C, TJ = 125 °C
A
16.3 21 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Sinusoidal waveform 20 A
800/1200 V
300 A
20 A, TJ = 25 °C 1.1 V
-40 to +150 °C
VOLTAGE RATINGS
, MAXIMUM
V
PART NUMBER
RRM
REVERSE VOLTAGE
NON-REPETITIVE PEAK REVERSE
, MAXIMUM PEAK
V
V
VS-20ETS08S-M3 800 900
VS-20ETS12S-M3 1200 1300
RSM
VOLTAGE
I
AT 150 °C
RRM
mA
V
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2s
F(AV)
I
FSM
Revision: 27-Oct-17
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TC = 105 °C, 180° conduction half sine wave 20
10 ms sine pulse, rated V
applied 250
RRM
10 ms sine pulse, no voltage reapplied 300
10 ms sine pulse, rated V
applied 316
RRM
10 ms sine pulse, no voltage reapplied 442
1
Document Number: 94889
A
2
s
A
Page 2
VS-20ETS08S-M3, VS-20ETS12S-M3 Series
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ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
20 A, TJ = 25 °C 1.1 V
FM
t
TJ = 150 °C
TJ = 25 °C
= 150 °C 1.0
T
J
= Rated V
V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range T Maximum thermal resistance,
junction to case Maximum thermal resistance,
junction to ambient Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6.0 (5.0)
maximum 12 (10)
Marking device Case style D
Note
(1)
When mounted on 1” square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994
, T
J
Stg
R
DC operation 1.3
thJC
(1)
R
thJA
R
thCS
For D2PAK version 62
Mounting surface, smooth, and greased 0.5
2
PAK (TO-263AB)
Vishay Semiconductors
10.4 m
0.85 V
RRM
0.1
-40 to +150 °C
2g
0.07 oz.
kgf · cm
(lbf · in)
20ETS08S
20ETS12S
mA
°C/W
150
140
130
120
110
Temperature (°C)
100
Maximum Allowable Case
10
0
20ETS.. Series R
thJC
46821012
Average Forward Current (A)
(DC) = 1.3 °C/W
Conduction angle
60°
30°
14 16 18
90°
Ø
120°
180°
20
22
150
140
130
120
110
Temperature (°C)
100
Maximum Allowable Case
90
0
20ETS.. Series R
thJC
30°
60°
1051520
Average Forward Current (A)
(DC) = 1.3 °C/W
Conduction period
90°
120°
180°
Ø
DC
25
Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics
Revision: 27-Oct-17
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Document Number: 94889
30
35
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0
30
35
25
20
15
10
5
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
20
25
51015
0
DC 180° 120°
90° 60° 30°
RMS limit
20ETS.. Series T
J
= 150 °C
Ø
Conduction period
1
10
100
1000
Instantaneous Forward Current (A)
Instantaneous Forwad Voltage (V)
1.00.5 1.5 2.0
3.5
4.0
2.5 3.0
0
TJ = 25°C
TJ = 150°C
20ETS.. Series
VS-20ETS08S-M3, VS-20ETS12S-M3 Series
Vishay Semiconductors
30
25
20
15
10
Power Loss (W)
5
Maximum Average Forward
0
0
180° 120°
90° 60° 30°
4
81216
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
RMS limit
Ø
Conduction angle
20ETS.. Series T
= 150 °C
J
20
300
250
200
150
Forward Current (A)
Peak Half Sine Wave
100
20ETS.. Series
24
50
1
At any rated load condition and with rated V
Number of Equal Amplitude Half
applied following surge.
RRM
10
Initial T
J
at 60 Hz 0.0083 s at 50 Hz 0.0100 s
= 150 °C
100
Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
300
250
200
Maximum non-repetitive surge current versus pulse train duration.
= 150 °C
Initial T
J
No voltage reapplied Rated V
RRM
reapplied
Fig. 4 - Forward Power Loss Characteristics
Revision: 27-Oct-17
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150
Forward Current (A)
Peak Half Sine Wave
100
20ETS.. Series
50
0.01
Pulse Train Duration (s)
0.1
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
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0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal Impedance (°C/W)
Steady state value (DC operation)
Single pulse
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
20ETS.. Series
VS-20ETS08S-M3, VS-20ETS12S-M3 Series
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- 20 E T S 12 S TRL -M3
- Vishay Semiconductors product
1
- Current rating (20 = 20 A)
2
3 - Circuit configuration
4
- Package:
T = D
5 - Type of silicon:
S = standard recovery rectifier
6 - Voltage code x 100 = V
S = surface mountable
-
7
8
-
9
- -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Fig. 8 - Thermal Impedance Z
Characteristics
thJC
51 32 4 6 7 8 9
E = single
2
PAK (TO-263AB)
RRM
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
08 = 800 V
12 = 1200 V
Revision: 27-Oct-17
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Document Number: 94889
Page 5
VS-20ETS08S-M3, VS-20ETS12S-M3 Series
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ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-20ETS08S-M3 50 1000 Antistatic plastic tube
VS-20ETS08STRR-M3 800 800 13" diameter reel
VS-20ETS08STRL-M3 800 800 13" diameter reel
VS-20ETS12S-M3 50 1000 Antistatic plastic tube
VS-20ETS12STRR-M3 800 800 13" diameter reel
VS-20ETS12STRL-M3 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96164
Part marking information www.vishay.com/doc?95444
Packaging information www.vishay.com/doc?96424
SPICE model www.vishay.com/doc?95409
Vishay Semiconductors
Revision: 27-Oct-17
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5
Document Number: 94889
Page 6
Assembly lot code
Part number
xxxxxx
(1)
AC
Example: This is a xxxxxx
(1)
with
assembly lot code AC, assembled on WW 02, 2010
V ZYWWX
Product version (optional):
Z (replaced according below table) Date code: Year 0 = 2010 Week 02 Line X
Part Marking Information
www.vishay.com
D2PAK
Note
(1)
If part number contain “H” as last digit, product is AEC-Q101 qualified
ENVIRONMENTAL NAMING CODE (Z) PRODUCT DEFINITION
A Termination lead (Pb)-free
BTotally lead (Pb)-free
E RoHS-compliant and termination lead (Pb)-free
F RoHS-compliant and totally lead (Pb)-free
M Halogen-free, RoHS-compliant, and termination lead (Pb)-free
N Halogen-free, RoHS-compliant, and totally lead (Pb)-free
G Green
Vishay Semiconductors
Revision: 21-Jun-17
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Document Number: 95444
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DIMENSIONS in millimeters and inches
®
Conforms to JEDE C
(3)
L1
D
132
L2
BB
2 x
e
outline D2PAK (SMD-220)
(2)(3)
E
4
H
2 x b2
2 x b
0.010
Lead tip
A
(2)
C
M
Detail A
M
A
0° to 8°
B
Gauge
plane
L3
A
c
± 0.004
B
c2
AA
A
M
B
L
L4
Rotated 90 °CW
D2PAK
Detail “A”
Scale: 8:1
(E)
E1
View A - A
H
A1
B
(3)
Seating
plane
Outline Dimensions
Vishay Semiconductors
Pad layout
11.00 MIN.
(0.43)
(D1)
(3)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08)
2.64 (0.103)
2.41 (0.096)
Plating
MIN.
(4)
b1, b3
(c)
(b, b2)
Section B - B and C - C
Scale: None
(0.38)
3.81
(0.15)
9.65
c1
MIN.
MIN.
Base Metal
(4)
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inches
(7)
Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
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Document Number: 96164
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D2PAK (TO-263AB)
CARRIER TAPE FOR TAPE AND REEL LEFT in millimeters
16 ± 0.1
4 ± 0.1
Ø 1.55 ± 0.05
2 ± 0.1
B
Packaging Information
Vishay Semiconductors
5.25 ± 0.2
0.40 ± 0.1
1.75 ± 0.1
1.3 ± 0.1
10.35 ± 0.1
A
A
B
5 ± 0.2
+0.2
Ø 10.8
-0.1
Section A-A
Note
(1)
For dimensions, see next pages
CARRIER TAPE FOR TAPE AND REEL RIGHT in millimeters
16 ± 0.1
4 ± 0.1
Ø 1.55 ± 0.05
2 ± 0.1
B
Ø 1.5
11.5 ± 0.1
+0.25
-0.1
Ø 4.9
1.5 ± 0.2
0.40 ± 0.1
1.75 ± 0.1
24 ± 0.3
Ø 4.9
+0.2
-0.05
+0.2
-0.05
16.13 ± 0.1
Cover tape
Section B-B
(1)
10.35 ± 0.1
11.5 ± 0.1
24 ± 0.3
A
A
B
5 ± 0.2
+0.2
Ø 10.8
-0.1
Section A-A
Ø 1.5
+0.25
-0.1
5.25 ± 0.2
1.5 ± 0.2
1.3 ± 0.1
Cover tape
Note
(1)
For dimensions, see next pages
Revision: 13-Oct-17
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Document Number: 96424
Section B-B
16.13 ± 0.1
(1)
Page 9
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Ø 330 ± 2.0
6.2 ± 0.2
29 ± 1
24.4 ± 0.3
Ø 100 ± 1
2.3 ± 0.2
Ø 13.2 ± 0.2
Ø 21± 0.4
120°
120°
REEL FOR CARRIER TAPE in millimeters
Packaging Information
Vishay Semiconductors
CARRIER TAPE AND REEL PACKAGING D
Top Cover Tape
Component
Cavity
2
PAK (TO-263AB)
Embossed Carrier
Tape
Revision: 13-Oct-17
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W
YY
Section view:
Section Y - Y
Top view:
T
COVER TAPE FOR CARRIER TAPE in millimeters
Packaging Information
Vishay Semiconductors
APPLICATION
2
D
PAK
(TO-263AB)
COVER TAPE WIDTHWCOVER TAPE THICKNESS
T
21.3 ± 0.1 0.060 ± 0.01 24 Antistatic/treated/transparent/polyester
CARRIER TAPE WIDTH MATERIAL
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Revision: 08-Feb-17
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