Page 1
VS-20CTH03PbF, VS-20CTH03FPPbF
TO-220AB
TO-220 FULL-PAK
VS-20CTH03PbF VS-20CTH03FPPbF
Anode
1
3
2
Base
common
cathode
2
Common
cathode
Anode
Anode
1
3
2
Common
cathode
Anode
Vishay Semiconductors
Hyperfast Rectifier, 2 x 10 A FRED Pt
PRODUCT SUMMARY
Package TO-220AB, TO-220FP
I
F(AV)
V
R
at I
V
F
F
t
typ. See Recovery table
rr
T
max. 175 °C
J
Diode variation Common cathode
2 x 10 A
300 V
1.25 V
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (V
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 qualified (TO-220)
• Designed and qualified for industrial level (TO-220FP)
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
= 2500 V
INS
RMS
)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
Average rectified forward current
Non-repetitive peak surge current I
Operating junction and storage temperatures T
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94010 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 [email protected]
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
RRM
per diode
(FULL-PAK) per diode T
per device 20
,
V
BR
V
R
IR = 100 μA 300 - -
R
IF = 10 A - 1.05 1.25
F
I
= 10 A, TJ = 125 °C - 0.85 0.95
F
VR = VR rated - - 20
T
= 125 °C, VR = VR rated - 6 200
J
VR = 300 V - 30 - pF
T
Measured lead to lead 5 mm from package body - 8 - nH
S
This datasheet is subject to change without notice.
I
F(AV)
FSM
, T
J
Stg
300 V
TC = 160 °C
= 135 °C
C
TJ = 25 °C 120
10
- 65 to 175 °C
www.vishay.com/doc?91000
A
V
μA
Page 2
VS-20CTH03PbF, VS-20CTH03FPPbF
1
10
100
0.4 0.6 21.4
1
1.8
VF - Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
1.61.20.8
TJ = 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
0.1
1
10
100
50 100 200 250 300
0.001
VR - Reverse Voltage (V)
I
R
- Reverse Current (mA)
150
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
TJ = 50 °C
TJ = 75 °C
Vishay Semiconductors
Hyperfast Rectifier, 2 x 10 A FRED Pt
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
= 1 A, dIF/dt = 100 A/μs, VR = 30 V - - 30
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 42 -
T
J
TJ = 25 °C - 2.4 -
T
= 125 °C - 5.6 -
J
= 10 A
I
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
TJ = 25 °C - 36 -
T
= 125 °C - 120 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDTIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
(FULL-PAK) per diode - - 3.9
Marking device
per diode
T
, T
J
Stg
R
thJC
Mounting surface, flat, smooth
and greased
Case style TO-220AB 20CTH03
Case style TO-220 FULL-PAK 20CTH03FP
®
-31-
- 65 - 175 °C
--1.5
ns
A
nC
°C/W
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94010
2 [email protected]
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Reverse Voltage
, [email protected], [email protected] Revision: 28-Apr-11
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 3
VS-20CTH03PbF, VS-20CTH03FPPbF
100
1000
0 100 200 250 300
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
15050
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
10 1
Hyperfast Rectifier, 2 x 10 A FRED Pt
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
1
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1
Single pulse
(thermal resistance)
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics
thJC
®
Vishay Semiconductors
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
10 1
Fig. 5 - Maximum Thermal Impedance Z
Document Number: 94010 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 [email protected]
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
Characteristics (FULL-PAK)
thJC
www.vishay.com/doc?91000
Page 4
VS-20CTH03PbF, VS-20CTH03FPPbF
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
DC
02468 16141210
180
170
160
150
140
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
DC
02468 16141210
180
170
160
150
100
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
140
130
120
110
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
02468 16141210
20
16
12
8
0
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
4
RMS limit
DC
1000
10
100 1000
Q
rr
(nC)
dIF/dt (A/µs)
100
VR = 200 V
IF = 10 A
TJ = 125 °C
TJ = 25 °C
Vishay Semiconductors
Hyperfast Rectifier, 2 x 10 A FRED Pt
®
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Fig. 8 - Forward Power Loss Characteristics
100
TJ = 125 °C
(ns)
rr
t
10
100 1000
TJ = 25 °C
VR = 200 V
dIF/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Time vs. dI
IF = 10 A
/dt
F
Note
(1)
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94010
4 [email protected]
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
x VFM at (I
F(AV)
REV
) x R
Fig. 10 - Typical Stored Charge vs. dI
;
thJC
/D) (see fig. 8);
F(AV)
R
, [email protected], [email protected] Revision: 28-Apr-11
This datasheet is subject to change without notice.
/dt
F
www.vishay.com/doc?91000
Page 5
VS-20CTH03PbF, VS-20CTH03FPPbF
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dIF/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
trr x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Hyperfast Rectifier, 2 x 10 A FRED Pt
V
= 200 V
R
0.01 Ω
L = 70 μH
D.U.T.
®
Vishay Semiconductors
dIF/dt
adjust
G
D
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
Document Number: 94010 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 [email protected]
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 12 - Reverse Recovery Waveform and Definitions
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 6
VS-20CTH03PbF, VS-20CTH03FPPbF
1 - Vishay Semiconductors product
2 - Current rating (20 = 20 A)
3 - C = Common cathode
4
- T = TO-220, D2PAK
5 - H = Hyperfast recovery
6 - Voltage rating (03 = 300 V)
7 - None = TO-220AB
FP = TO-220 FULL-PAK
- PbF = Lead (Pb)-free
8
Tube standard pack quantity: 50 pieces
Device code
51 32 4 6 7 8
VS- 20 C T H 03 FP PbF
Vishay Semiconductors
ORDERING INFORMATION TABLE
Hyperfast Rectifier, 2 x 10 A FRED Pt
®
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-220AB FULL-PAK www.vishay.com/doc?95072
TO-220AB FULL-PAK www.vishay.com/doc?95069
TO-220AB www.vishay.com/doc?95222
TO-220AB www.vishay.com/doc?95225
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94010
6 [email protected]
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
, [email protected], [email protected] Revision: 28-Apr-11
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 7
www.vishay.com
DIMENSIONS in millimeters
Outline Dimensions
Vishay Semiconductors
R 0.7
R 0.5
16.4
15.4
2.54 TYP.
(2 places)
5° ± 0.5°
10.6
10.4
0.9
0.7
2.54 TYP.
5° ± 0.5°
Hole Ø
3.7
3.2
4.8
4.6
7.31
6.91
3.4
3.1
16.0
15.8
0.61
0.38
2.85
2.65
2.8
2.6
10°
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Conforms to JEDEC outline TO-220 FULL-PAK
3.3
3.1
1.4
1.3
1.15
1.05
13.56
13.05
TYP.
Revision: 20-Jul-11
For technical questions within your region: [email protected]
1
Document Number: 95072
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 8
DIMENSIONS in millimeters and inches
13
2
D
D1
H1
Q
13
2
C
C
D
D
3 x b23 x b
(b, b2)
b1, b3
(H1)
D2
Detail B
C
A
B
L
e1
Lead tip
E
E2
Ø P
0.014 AB
M M
0.015 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Conforms to JEDEC outline TO-220AB
(6)
(6)
(7)
(6)
(7)
e
2 x
L1
(2)
Detail B
Section C - C and D - D
View A - A
Base metal Plating
(4)
(4)
c1
c
(6)
Thermal pad
(E)
E1
(6)
Outline Dimensions
Vishay Semiconductors
TO-220AB
SYMBOL
A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355 90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4)
Dimension b1, b3 and c1 apply to base metal only
(5)
Controlling dimensions: inches
(6)
Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Mar-11 [email protected]
NOTES SYMBOL
(7)
(8)
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
MILLIMETERS INCHES
NOTES
Page 9
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
Loading...