Datasheet VS-1N5817, VS-1N5817-M3 DataSheet (Vishay)

Page 1
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Cathode Anode
DO-204AL
PRODUCT SUMMARY
Package DO-204AL (DO-41)
I
F(AV)
V
R
V
at I
F
F
I
max. 10 mA at 125 °C
RM
max. 150 °C
T
J
Diode variation Single die
E
AS
VS-1N5817, VS-1N5817-M3
Schottky Rectifier, 1.0 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
1 A
20 V
See Electrical table
See Electrical table
• Halogen-free according to IEC 61249-2-21 definition (-M3 only)
DESCRIPTION
The VS-1N5817... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 1.0 A
20 V
tp = 5 μs sine 240 A
1 Apk, TJ = 25 °C 0.45 V
Range - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-1N5817 VS-1N5817-M3 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
20 20 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive surge current at T
= 25 °C
J
F(AV)
I
FSM
50 % duty cycle at TL = 138 °C, rectangular waveform 1.0
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 40
Following any rated load condition and with rated V
applied
RRM
240
A
Revision: 21-Sep-11
1
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 93255
Page 2
VS-1N5817, VS-1N5817-M3
dP
tot
dT
J
-------------
1
R
thJA
--------------<
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ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
1 A
RM
FM
(1)
3 A 0.50 0.75
TJ = 25 °C
(1)
T
S
T
= 100 °C 2.0 10
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 110 - pF
Measured lead to lead 5 mm from package body 8.0 - nH
Maximum forward voltage drop V
Maximum reverse leakage current I
Typical junction capacitance C
Typical series inductance L
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
V
= Rated V
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to lead
Maximum thermal resistance, junction to ambient
Approximate weight
Marking device Case style DO-204AL (DO-41) 1N5817
Note
(1)
thermal runaway condition for a diode on its own heatsink
(1)
, T
T
J
Stg
R
thJL
R
thJA
DC operation Lead length = 1/8"
DC operation Without cooling fin
Vishay Semiconductors
0.42 0.45
0.012 1.0
R
- 10 000 V/µs
- 65 to 150 °C
32
°C/W
100
0.33 g
0.012 oz.
V
mA
Revision: 21-Sep-11
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
Document Number: 93255
Page 3
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I
R
- Reverse Current (mA)
VR - Reverse Voltage (V)
93255_02
0.0001
0.001
0.01
0.1
1
10
100
0 5 10 15 20
TJ = 150° C
TJ = 125° C
TJ = 100° C
TJ = 75° C
TJ = 25° C
TJ = 50° C
C
T
- Junction Capacitance (pF)
VR - Reverse Voltage (V)
93255_03
10
100
1000
0 5 10 15 20
TJ = 25 °C
Allowable Lead Temperature (°C)
I
F(AV)
- Average Forward Current (A)
93255_04
130
135
140
145
150
0 0.4 0.8 1.2 1.6
DC
see note (1)
Square wave
(D = 0.5)
Average Forward Current - I
F(AV)
(A)
Average Power Loss (W)
93255_05
0
0.1
0.2
0.3
0.4
0.5
0 0.4 0.8 1.2 1.6
DC
RMS Limit
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
100
10
1
T = 150 °C T = 125 °C T = 25 °C
0.1
- Instantaneous Forward Current (A)
F
I
93255_01
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0 0.2 0.4 0.6 0.8 1
VFM - Forward Voltage Drop (V)
VS-1N5817, VS-1N5817-M3
Vishay Semiconductors
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 2 - Typical Peak Reverse Current vs.
Note
(2)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I
Revision: 21-Sep-11
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 5 - Maximum Average Forward Dissipation vs.
Reverse Voltage
1000
100
- Non-Repetitive Surge Current (A)
10
FSM
I
93255_06
Average Forward Current
At Any Rated Load Condition And With rated V Following Surge
TJ = 25 °C
10 100 1000 10 000
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
) x R
x VFM at (I
F(AV)
REV
;
thJC
/D) (see fig. 6); Pd
F(AV)
= Inverse power loss = VR1 x IR (1 - D)
REV
3
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RRM
Applied
Document Number: 93255
Page 4
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ORDERING INFORMATION TABLE
VS-1N5817, VS-1N5817-M3
Vishay Semiconductors
Device code
VS-
1
2
3
1N5817 TR
1
- Vishay Semiconductors product
- Part number: 1 A, 20 V
- TR = Tape and reel package
2 3
-M3
4
None = Box package
- Environmental digit
4
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-1N5817 1000 1000 Bulk
VS-1N8517TR 5000 5000 Tape and reel
VS-1N5817-M3 1000 1000 Bulk
VS-1N5817TR-M3 5000 5000 Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95241
Part marking information www.vishay.com/doc?95304
Packaging information www.vishay.com/doc?95338
Revision: 21-Sep-11
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Document Number: 93255
Page 5
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DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
Axial DO-204AL (DO-41)
27.0 (1.06) MIN. (2 places)
0.86 (0.034)
0.72 (0.028) (2 places)
DIA.
2.70 (0.106)
2.29 (0.090)
5.21 (0.205) MAX.
DIA.
Cathode band
5.21 (0.205) MAX.
0.86 (0.034)
0.72 (0.028) (2 places)
DIA.
27.0 (1.06) MIN. (2 places)
1.27 (0.050) MAX. Flash (2 places)
2.70 (0.106)
2.29 (0.090)
DIA.
Revision: 29-Aug-11
For technical questions within your region: [email protected]
1
Document Number: 95241
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 6
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Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000
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