Datasheet VS-15ETL06SPbF, VS-15ETL06-1PbF DataSheet (Vishay)

Ultralow VF Hyperfast Rectifier for

D2PAK

TO-262

V

S-15ETL06SPbFVS-15ETL06-1PbF

Anode

1

3

Base

cathode

2

N/C

Anode

1

3

2

N/C

Discontinuous Mode PFC, 15 A FRED Pt

PRODUCT SUMMARY

Package TO-263AB (D2PAK), TO-262AA

I

F(AV)

V

R

V

at I

F

F

t

(typ.) 60 ns

rr

max. 175 °C

T

J

Diode variation Single die

15 A

600 V

1.05 V

VS-15ETL06SPbF, VS-15ETL06-1PbF

Vishay Semiconductors

®

FEATURES

• Benchmark ultralow forward voltage drop

• Hyperfast recovery time

• Low leakage current

• 175 °C operating junction temperature

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

DESCRIPTION

State of the art, ultralow VF, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.

APPLICATIONS

AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD ac-to-dc power supplies.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Peak repetitive reverse voltage V

Average rectified forward current I

Peak repetitive forward current I

Operating junction and storage temperatures T

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

Document Number: 94005 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-Jun-10 [e-mail]

RRM

F(AV)

FSM

FM

, T

J

,

V

BR

V

R

IR = 100 μA 600 - -

R

IF = 15 A - 0.99 1.05

F

I

= 15 A, TJ = 150 °C - 0.85 0.92

F

VR = VR rated - 0.1 10

T

= 150 °C, VR = VR rated - 15 120

J

VR = 600 V - 20 - pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

, [e-mail], [e-mail] 1

TC = 154 °C 15

TJ = 25 °C 250

Stg

600 V

ANon-repetitive peak surge current I

30

- 65 to 175 °C

V

μA

VS-15ETL06SPbF, VS-15ETL06-1PbF

Vishay Semiconductors

Ultralow VF Hyperfast Rectifier for

Discontinuous Mode PFC, 15 A FRED Pt

®

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 60 120

= 15 A, dIF/dt = 100 A/μs, VR = 30 V - 190 270

I

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

F

T

= 25 °C

J

= 125 °C - 320 -

T

J

TJ = 25 °C - 19 -

T

= 125 °C - 26 -

J

= 15 A

I

F

dI

/dt = 200 A/μs

F

= 390 V

V

R

-220-

TJ = 25 °C - 2.2 -

T

= 125 °C - 4.3 -

J

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and storage
temperature range

Thermal resistance,
junction to case per leg

Thermal resistance,
junction to ambient per leg

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device

, T

T

J

Stg

R

-1.01.3

thJC

R

thJA

R

thCS

Typical socket mount - - 70

Mounting surface, flat, smooth and
greased

- 65 - 175 °C

-0.5-

-2.0- g

-0.07- oz.

Case style D

6.0

(5.0)

2

PAK 15ETL06S

-

Case style TO-262 15ETL06-1

12

(10)

kgf · cm

(lbf · in)

ns

A

μC

°C/W

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2 [e-mail]

, [e-mail], [e-mail] Revision: 23-Jun-10

100

10

1

0.4 0.6 0.8 1.0 1.2

1.6

I

F

- Instantaneous Forward

Current (A)

VF - Forward Voltage Drop (V)

TJ = 175 °C
T

J

= 150 °C

T

J

= 25 °C

1.4

0 100 200 300 400 500 600

I

R

- Reverse Current (µA)

VR - Reverse Voltage (V)

0.001

0.01

0.1

1

10

100

TJ = 100 °C

TJ = 175 °C

TJ = 150 °C

T

J

= 125 °C

TJ = 25 °C

TJ = 50 °C

TJ = 75 °C

VS-15ETL06SPbF, VS-15ETL06-1PbF

Ultralow VF Hyperfast Rectifier for

Discontinuous Mode PFC, 15 A FRED Pt

Vishay Semiconductors

®

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

100

Document Number: 94005 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-Jun-10 [e-mail]

10

1

0.1

Thermal Impedance (°C/W)

-

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1

TJ = 25 °C

- Junction Capacitance (pF)

T

C

10

0 100 200 300 400 500 600

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

D = 0.50
D = 0.20
D = 0.10
D = 0.05

Single pulse

(thermal resistance)

D = 0.02
D = 0.01

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

thJC

, [e-mail], [e-mail] 3

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

Characteristics

P

DM

t

1

t

2

.

1/t2

+ T

thJC

C

.

10

0 5 10 15 20 25

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

130

140

150

160

170

180

See note (1)

Square wave (D = 0.50)
80 % rated V

R

applied

DC

0 5 10 15 20 25

Average Power Loss (W)

I

F(AV)

- Average Forward Current (A)

0

5

10

15

20

25

D = 0.01

D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

DC

RMS Limit

VS-15ETL06SPbF, VS-15ETL06-1PbF

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

Fig. 6 - Forward Power Loss Characteristics

Ultralow VF Hyperfast Rectifier for

Discontinuous Mode PFC, 15 A FRED Pt

500

400

300

(ns)

rr

t

200

100

VR = 390 V

= 125 °C

T

J

= 25 °C

T

J

0

100 1000

dIF/dt (A/µs)

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt

9000

IF = 30 A

8000

IF = 15 A

7000

6000

5000

(nC)

rr

4000

Q

3000

2000

1000

0

100 1000

dIF/dt (A/µs)

Fig. 8 - Typical Stored Charge vs. dI

®

VR = 390 V
T

J

T

J

= 125 °C
= 25 °C

IF = 30 A

IF = 15 A

/dt

F

Note

(1)

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Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

x VFM at (I

F(AV)

REV

) x R

;

thJC

/D) (see fig. 6);

F(AV)

R

, [e-mail], [e-mail] Revision: 23-Jun-10

IRFP250

D.U.T.

L = 70 μH

V

R

= 200 V

0.01 Ω

G

D

S

dIF/dt

adjust

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

VS-15ETL06SPbF, VS-15ETL06-1PbF

Ultralow VF Hyperfast Rectifier for

Discontinuous Mode PFC, 15 A FRED Pt

Fig. 9 - Reverse Recovery Parameter Test Circuit

Vishay Semiconductors

®

Document Number: 94005 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-Jun-10 [e-mail]

Fig. 10 - Reverse Recovery Waveform and Definitions

, [e-mail], [e-mail] 5

2

- Current rating (15 A)

3

- E = Single diode

4 - T = TO-220, D2PAK

5

- L = Ultralow V

F

hyperfast recovery

6

- Voltage rating (06 = 600 V)

- PbF = Lead (Pb)-free

7

-

S = D2PAK

-1 = TO-262

8

-

None = Tube (50 pieces)

TRL = Tape and reel (left oriented, for D

2

PAK package)

TRR = Tape and reel (right oriented, for D

2

PAK package)

9

Device code

51

324

6789

VS- 15 E T L 06 S TRL PbF

1 - HPP product suffix

VS-15ETL06SPbF, VS-15ETL06-1PbF

Vishay Semiconductors

Discontinuous Mode PFC, 15 A FRED Pt

ORDERING INFORMATION TABLE

Ultralow VF Hyperfast Rectifier for

®

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95014

Part marking information www.vishay.com/doc?95008

Packaging information www.vishay.com/doc?95032

SPICE model www.vishay.com/doc?95270

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94005
6 [e-mail]

, [e-mail], [e-mail] Revision: 23-Jun-10

D2PAK, TO-262

DIMENSIONS FOR D2PAK in millimeters and inches

Outline Dimensions

Vishay High Power Products

Conforms to JEDEC outline D

(2)(3)

E

(3)

L1

D

L2

2 x

Lead assignments

Diodes

1. - Anode (two die)/open (one die)

2., 4. - Cathode

3. - Anode

4

132

BB

e

2

2 x b2

2 x b

0.010

PAK (SMD-220)

A

Detail A

H

(2)

C

MM

A

Lead tip

B

A

c2

AA

A

c

M

± 0.004

B

Gauge

0° to 8°

plane

L3

B

L

L4

Detail “A”

Rotated 90 °CW

Scale: 8:1

(E)

E1

View A - A

A1

(3)

(D1)

17.90 (0.70)

15.00 (0.625)

2.32

(0.08)

Plating

Seating

plane

2.64 (0.103)

2.41 (0.096)

(3)

H

B

Pad layout

11.00
MIN.

(0.43)

MIN.

(4)

b1, b3

(c)

(b, b2)

Section B - B and C - C

Scale: None

9.65

(0.38)

3.81

(0.15)

c1

MIN.

MIN.

Base
Metal

(4)

SYMBOL

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3

A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3

b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3

b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3

c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5 M-1994

(2)

Dimension D and E do not include mold flash. Mold flash shall not

(7)

Outline conforms to JEDEC outline TO-263AB

exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body

(3)

Thermal pad contour optional within dimension E, L1, D1 and E1

(4)

Dimension b1 and c1 apply to base metal only

(5)

Datum A and B to be determined at datum plane H

(6)

Controlling dimension: inch

Document Number: 95014 For technical questions concerning discrete products, contact: [e-mail]
Revision: 31-Mar-09 For technical questions concerning module products, contact: [e-mail]

NOTES

www.vishay.com

1

Outline Dimensions

Vishay High Power Products

D2PAK, TO-262

DIMENSIONS FOR TO-262 in millimeters and inches

Modified JEDEC outline TO-262

(Datum A)

(3)

L1

D

(2) (3)

E

1

L2

B

B

2 x e

MM

0.010 A B

Lead tip

A

2

3

C

C

L

(2)

3 x b2

3 x b

Lead assignments

Diodes

1. - Anode (two die)/open (one die)

2., 4. - Cathode

3. - Anode

c

A

A1

c2

B

A

Seating

plane

A

E

E1

Section A - A

Plating

(4)

b1, b3

c

(b, b2)

Section B - B and C - C

Scale: None

(3)

Base
metal

c1

(3)D1

(4)

SYMBOL

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

A 4.06 4.83 0.160 0.190

A1 2.03 3.02 0.080 0.119

b 0.51 0.99 0.020 0.039

b1 0.51 0.89 0.020 0.035 4

b2 1.14 1.78 0.045 0.070

b3 1.14 1.73 0.045 0.068 4

c 0.38 0.74 0.015 0.029

c1 0.38 0.58 0.015 0.023 4

c2 1.14 1.65 0.045 0.065

D 8.51 9.65 0.335 0.380 2

D1 6.86 8.00 0.270 0.315 3

E 9.65 10.67 0.380 0.420 2, 3

E1 7.90 8.80 0.311 0.346 3

e 2.54 BSC 0.100 BSC

L 13.46 14.10 0.530 0.555

L1 - 1.65 - 0.065 3

L2 3.56 3.71 0.140 0.146

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Dimension D and E do not include mold flash. Mold flash shall not
exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body

(3)

Thermal pad contour optional within dimension E, L1, D1 and E1

(4)

Dimension b1 and c1 apply to base metal only

(5)

Controlling dimension: inches

(6)

Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline

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2 For technical questions concerning module products, contact: [e-mail]

NOTES

Document Number: 95014

Revision: 31-Mar-09

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