Datasheet VS-15ETH06PbF, VS-15ETH06FPPbF DataSheet (Vishay)

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VS-15ETH06PbF, VS-15ETH06FPPbF

TO-220AC TO-220 FULL-PAK

Anode

Cathode

Base

cathode

Anode

Cathode

VS-15ETH06PbF VS-15ETH06FPPbF

Vishay Semiconductors

Ultrafast Rectifier, 15 A FRED Pt

PRODUCT SUMMARY

Package TO-220AC, TO-220FP

F(AV)

at I

typ. 22 ns

max. 175 °C

Diode variation Single die

15 A

600 V

2.2 V

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Single die center tap module

• Fully isolated package (V

= 2500 V

INS

• UL E78996 pending

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

RMS

)

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Peak repetitive reverse voltage V

Average rectified forward current I

Non-repetitive peak surge current I

Peak repetitive forward current I

Operating junction and storage temperatures T

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage, blocking voltage V

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

Document Number: 94002 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

RRM

F(AV)

FSM

, T

, VRIR = 100 μA 600 - -

IF = 15 A - 1.8 2.2

= 15 A, TJ = 150 °C - 1.3 1.6

VR = VR rated - 0.2 50

= 150 °C, VR = VR rated - 30 500

VR = 600 V - 20 - pF

Measured lead to lead 5 mm from package body - 8.0 - nH

This datasheet is subject to change without notice.

TC = 140 °C

= 80 °C (FULL-PAK)

TJ = 25 °C 120

= 25 °C (FULL-PAK) 180

Stg

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600 V

- 65 to 175 °C

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μA

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VS-15ETH06PbF, VS-15ETH06FPPbF

100

0.5 1.0 1.5 2.0 2.5 3.0

- Instantaneous Forward

Current (A)

VF - Forward Voltage Drop (V)

TJ = 175 °C T

= 150 °C

= 25 °C

Vishay Semiconductors

Ultrafast Rectifier, 15 A FRED Pt

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 22 30

= 15 A, dIF/dt = 100 A/μs, VR = 30 V - 28 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

RRM

= 25 °C

= 125 °C - 75 -

TJ = 25 °C - 3.5 -

= 125 °C - 7 -

= 15 A

/dt = 200 A/μs

= 390 V

TJ = 25 °C - 57 -

= 125 °C - 300 -

= 15 A

TJ = 125 °C

/dt = 800 A/μs

= 390 V

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range

Thermal resistance, junction to case

Thermal resistance, junction to ambient per leg

Thermal resistance, case to heatsink

Weight

Mounting torque

Marking device

(FULL-PAK) - 3.0 3.5

, T

Stg

thJC

Typical socket mount - - 70

thJA

thCS

Mounting surface, flat, smooth and greased

Case style TO-220AC 15ETH06

Case style TO-220 FULL-PAK 15ETH06FP

-29-

-51-ns

-20- A

-580- nC

- 65 - 175 °C

-1.01.3

-0.5-

-2.0- g

-0.07- oz.

6.0

(5.0)

(10)

kgf · cm

(lbf · in)

°C/W

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

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THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

1000

100

0.1

0.01

- Reverse Current (µA)

0.001

0 100 200 300 400 500 600

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This datasheet is subject to change without notice.

TJ = 175 °C

TJ = 150 °C

= 125 °C

TJ = 100 °C

= 25 °C

VR - Reverse Voltage (V)

Reverse Voltage

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- Junction Capacitance (pF)

1000

100

100 200 300 400 500 6000

VR - Reverse Voltage (V)

TJ = 25 °C

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

thJC

- Thermal Impedance (°C/W)

Single pulse

(thermal resistance)

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

100

D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01

VS-15ETH06PbF, VS-15ETH06FPPbF

Ultrafast Rectifier, 15 A FRED Pt

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Vishay Semiconductors

0.1

- Thermal Impedance (°C/W)

thJC

0.01

Single pulse

(thermal resistance)

D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

1/t2

+ T

thJC

Fig. 5 - Maximum Thermal Impedance Z

Document Number: 94002 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

Characteristics (FULL-PAK)

thJC

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VS-15ETH06PbF, VS-15ETH06FPPbF

0 5 10 15 20 25

Allowable Case Temperature (°C)

F(AV)

- Average Forward Current (A)

120

130

140

150

160

170

180

See note (1)

Square wave (D = 0.50) 80 % rated V

applied

110

0 4 8 12 20 24

Allowable Case Temperature (°C)

F(AV)

- Average Forward Current (A)

100

140

160

180

See note (1)

Square wave (D = 0.50) 80 % rated V

applied

180

120

1000

100 1000

(nC)

dIF/dt (A/µs)

200

400

600

800

IF = 30 A

IF = 15 A

VR = 390 V T

= 125 °C

= 25 °C

Vishay Semiconductors

Ultrafast Rectifier, 15 A FRED Pt

Fig. 6 - Maximum Allowable Case Temperature vs.

Average Forward Current

Fig. 7 - Maximum Allowable Case Temperature vs.

Average Forward Current (FULL-PAK)

Average Power Loss (W)

0 5 10 15 20 25

F(AV)

- Average Forward Current (A)

Fig. 8 - Forward Power Loss Characteristics

100

(ns)

VR = 390 V T

= 125 °C

= 25 °C

100 1000

dIF/dt (A/µs)

Fig. 9 - Typical Reverse Recovery Time vs. dI

RMS limit

D = 0.01

D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50

IF = 30 A

IF = 15 A

/dt

Note

(1)

Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd

REV

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THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

x VFM at (I

F(AV)

REV

) x R

Fig. 10 - Typical Stored Charge vs. dI

;

thJC

/D) (see fig. 8);

F(AV)

/dt

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This datasheet is subject to change without notice.

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VS-15ETH06PbF, VS-15ETH06FPPbF

0.5 I

RRM

(rec)M

/dt

0.75 I

RRM

dIF/dt

(1)

(2)

(3)

(4)

(5)

(1) dI

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

- reverse recovery time measured from zero crossing point of negative going I

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

- area under curve dened by t

and I

RRM

trr x I

RRM

(5) dI

(rec)M

/dt - peak rate of change of

current during t

portion of t

Ultrafast Rectifier, 15 A FRED Pt

= 200 V

0.01 Ω

L = 70 μH

D.U.T.

Vishay Semiconductors

dIF/dt

adjust

IRFP250

Fig. 11 - Reverse Recovery Parameter Test Circuit

Document Number: 94002 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 [email protected]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 12 - Reverse Recovery Waveform and Definitions

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This datasheet is subject to change without notice.

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VS-15ETH06PbF, VS-15ETH06FPPbF

1 - Vishay Semiconductors product

2 - Current rating (15 = 15 A)

3 - E = Single diode

- T = TO-220, D2PAK

5 - H = Hyperfast recovery

6 - Voltage rating (06 = 600 V)

7 - None = TO-220AC

FP = TO-220 FULL-PAK

- PbF = Lead (Pb)-free

Tube standard pack quantity: 50 pieces

Device code

51 32 4 6 7 8

VS- 15 E T H 06 FP PbF

Vishay Semiconductors

ORDERING INFORMATION TABLE

Ultrafast Rectifier, 15 A FRED Pt

LINKS TO RELATED DOCUMENTS

Dimensions

Part marking information

TO-220AC FULL-PAK www.vishay.com/doc?95005

TO-220AC FULL-PAK www.vishay.com/doc?95009

TO-220AC www.vishay.com/doc?95221

TO-220AC www.vishay.com/doc?95224

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THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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This datasheet is subject to change without notice.

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Page 7

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5° ± 0.5°

3.3

3.1

5° ± 0.5°

0.9

0.7

2.54 TYP.

10.6

10.4

3.7

3.2

7.31

6.91

0.61

0.38

2.85

2.65

2.8

2.6

1.4

1.3

10°

4.8

4.6

16.0

15.8

16.4

15.4

(2 places)

R 0.7 R 0.5

Hole Ø

3.4

3.1

TYP.

1.15

1.05

13.56

13.05

Lead assignments

Diodes 1 + 2 - Cathode

3 - Anode

Conforms to JEDEC outline TO-220 FULL-PAK

DIMENSIONS in millimeters

Outline Dimensions

Vishay Semiconductors

Revision: 20-Jul-11

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Document Number: 95005

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DIMENSIONS in millimeters and inches

(6)

(7)

(6)

Ø P

0.014 AB

Detail B

(6)

(7)

TO-220AC

Seating

plane

Outline Dimensions

Vishay Semiconductors

123

DL1D

Thermal pad

D2 (6)

E1 (6)

2 x b2 2 x b

Lead assignments

Diodes 1 + 2 - Cathode

3 - Anode

Detail B

Lead tip

SYMBOL

0.015 AB

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

View A - A

Conforms to JEDEC outline TO-220AC

MILLIMETERS INCHES

NOTES

A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6

A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7

A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105

b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208

b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7

b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552

b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2

c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084

c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2

D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147

D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118

D2 11.68 12.88 0.460 0.507 6  90° to 93° 90° to 93°

E 10.11 10.51 0.398 0.414 3, 6

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimension: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and E1

(7)

Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed

(8)

Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline

Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 07-Mar-11 [email protected]

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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

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