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Cathode Anode
PowerTab
®
VS-150EBU02
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 150 A FRED Pt
PRODUCT SUMMARY
Package PowerTab
I
F(AV)
V
R
V
at I
F
F
(typ.) See recovery table
t
rr
T
max. 175 °C
J
Diode variation Single die
150 A
200 V
1.13 V
®
FEATURES
• Ultrafast recovery time
• 175 °C max. operating junction temperature
• Screw mounting only
• Designed and qualified according to
JEDEC-JESD47
• Compliant to RoHS Directive 2002/95/EC
• PowerTab
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
®
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
®
package
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Operating junction and storage
temperatures
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Revision: 15-Jun-11
R
F(AV)
FSM
FRM
, T
T
J
V
BR
V
R
F
R
T
S
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TC = 116 °C 150
TC = 25 °C 1600
Square wave, 20 kHz 380
Stg
,
IR = 100 μA 200 - -
IF = 150 A - 0.99 1.13
I
= 150 A, TJ = 175 °C - 0.79 0.90
F
VR = VR rated - - 50 μA
T
= 150 °C, VR = VR rated - - 2 mA
J
VR = 200 V - 180 - pF
Measured lead to lead 5 mm from package body - 3.5 - nH
1
200 V
ASingle pulse forward current I
- 55 to 175 °C
Document Number: 93002
V
Page 2
VS-150EBU02
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - - 45
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
= 125 °C - 58 -
T
J
TJ = 25 °C - 4.5 -
T
= 125 °C - 9.0 -
J
= 150 A
I
F
V
= 160 V
R
dI
/dt = 200 A/μs
F
TJ = 25 °C - 87 -
T
= 125 °C - 300 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style PowerTab
R
- - 0.35
thJC
Mounting surface, flat, smooth and greased - 0.2 -
R
thCS
®
Vishay Semiconductors
-34-
- - 5.02 g
-0.18- oz.
1.2
(10)
-
2.4
(20)
150EBU02
nsT
A
nC
K/W
N · m
(lbf · in)
Revision: 15-Jun-11
For technical questions within your region: [email protected]
2
Document Number: 93002
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Forward Voltage Drop - VFM (V)
Instantaneous Forward Current - I
F
(A)
1
10
100
1000
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
T = 175˚C
T = 125˚C
T = 25˚C
J
J
J
Reverse Voltage - VR (V)
Junction Capacitance - C
T
(pF)
100
1000
10000
1 10 100 1000
T = 25˚C
J
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(°C/W)
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
VS-150EBU02
Vishay Semiconductors
1000
T = 175˚C
100
(µA)
R
10
1
0.1
Reverse Current - I
0.01
0.001
0 50 100 150 200
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
J
125˚C
25˚C
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Revision: 15-Jun-11
For technical questions within your region: [email protected]
Fig. 4 - Maximum Thermal Impedance Z
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Characteristics
thJC
3
Document Number: 93002
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Average Forward Current - IF
(AV)
(A)
Allowable Case Temperature (°C)
60
80
100
120
140
160
180
05010015020025
DC
Square wave (D = 0.50)
80% Rated Vr applied
see note (1)
0
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
VS-150EBU02
Vishay Semiconductors
70
IF = 150A
60
50
40
trr ( ns )
30
Vr = 160V
20
Tj = 125˚C
Tj = 25˚C
10
diF/dt (A/µs )
Fig. 7 - Typical Reverse Recovery Time vs. dI
900
IF = 75A
0001001
/dt
F
250
200
150
100
50
Average Power Loss ( Watts )
0
050100150200250
Average Forward Current - IF
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
RMS Limit
REV
x VFM at (I
F(AV)
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
) x R
(AV)
thJC
(A)
;
F(AV)
/D) (see fig. 6);
Vr = 160V
800
Tj = 125˚C
Tj = 25˚C
700
600
IF = 150A
IF = 75A
500
400
Qrr ( nC )
300
200
100
0
diF/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. dI
R
0001001
/dt
F
Revision: 15-Jun-11
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
4
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Document Number: 93002
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Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dIF/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
trr x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
L = 70 μH
= 200 V
V
R
VS-150EBU02
Vishay Semiconductors
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 15-Jun-11
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 10 - Reverse Recovery Waveform and Definitions
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5
Document Number: 93002
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ORDERING INFORMATION TABLE
VS-150EBU02
Vishay Semiconductors
Device code
150VS- E B U 02
621 43 5
1 - Vishay Semiconductors product
2 - Current rating (150 = 150 A)
3 - Single diode
4
- PowerTab® (ultrafast/hyperfast only)
5 - Ultrafast recovery
6 - Voltage rating (02 = 200 V)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95240
Part marking information www.vishay.com/doc?95370
Application note www.vishay.com/doc?95179
Revision: 15-Jun-11
For technical questions within your region: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6
Document Number: 93002
Page 7
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Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
15.90 (0.62)
15.60 (0.61)
15.60 (0.61)
14.80 (0.58)
4.00 (0.15)
5.20 (0.20)
8.45 (0.33)
8.20 (0.32)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
4.95 (0.19)
4.75 (0.18)
4.20 (0.16)
5.45 REF.
(0.21 REF.)
PowerTab
Lead 1
12.40 (0.48)
12.10 (0.47)
Lead 2
4.95 (0.19)
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
1.35 (0.05)
1.20 (0.04)
3.09 (0.12)
3.00 (0.11)
0.60 (0.02)
0.40 (0.01)
®
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
18.25 (0.71)
18.00 (0.70)
1.30 (0.05)
1.10 (0.04)
27.65 (1.08)
27.25 (1.07)
12.20 (0.48)
12.00 (0.47)
39.8 (1.56)
39.6 (1.55)
Revision: 03-Aug-11
For technical questions within your region: [email protected]
1
Document Number: 95240
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Page 8
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000
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