Datasheet VRF150 Specification

RF POWER VERTICAL MOSFET

The VRF150 is a gold-metallized silicon n-channel RF power transistor de­signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.

FEATURES

• Improved Ruggedness V

= 170V

(BR)DSS

• 150W with 11dB Typical Gain @ 150MHz, 50V

• 150W with 18dB Typical Gain @ 30MHz, 50V

• Excellent Stability & Low IMD

• Common Source Conguration

• Available in Matched Pairs

• 70:1 Load VSWR Capability at Specied Operating Conditions

• Nitride Passivated

• Refractory Gold Metallization

• High Voltage Replacement for MRF150

• RoHS Compliant

VRF150

VRF150MP

50V, 150W, 150MHz

M174

Maximum Ratings All Ratings: TC =25°C unless otherwise specied

Symbol Parameter VRF150(MP) Unit

V

DSS

I

D

V

GS

P

D

T

STG

T

J

Drain-Source Voltage 170 V

Continuous Drain Current @ TC = 25°C 16 A

Gate-Source Voltage ±40 V

Total Device dissipation @ TC = 25°C 300 W

Storage Temperature Range -65 to 150

Operating Junction Temperature 200

°C

Static Electrical Characteristics

Symbol Parameter Min Typ Max Unit

V

V

V

(BR)DSS

DS(ON)

I

DSS

I

GSS

g

fs

GS(TH)

Drain-Source Breakdown Voltage (V

On State Drain Voltage (I

= 10A, VGS = 10V) 2.0 3.0

D(ON)

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (VGS = ±20V, V

Forward Transconductance (V

= 0V, ID = 100mA) 170 180

GS

= 100V, V

DS

= 10V, ID = 5A) 4.5 mhos

DS

= 0V) 1.0 mA

GS

= 0V) 1.0 μA

DS

Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V

V

Thermal Characteristics

Symbol Characteristic Min Typ Max Unit

R

θ

JC

Junction to Case Thermal Resistance 0.60 °C/W

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

050-4936 Rev G 12-2013

Dynamic Characteristics

1

1

10

20

1 10 100 250

0

5

10

15

20

25

30

35

0 2 4 6 8 10 12

0

5

10

15

20

25

30

35

0 4 8 12 16 20 24 28 32

10

100

1,000

0 10 20 30 40 50

VRF150(MP)

Symbol Parameter Test Conditions Min Typ Max Unit

C

ISS

C

oss

C

rss

Input Capacitance V

Output Capacitance V

= 0V 420

GS

= 50V 210

DS

Reverse Transfer Capacitance f = 1MHz 35

pF

Functional Characteristics

Symbol Parameter Min Typ Max Unit

G

G

IMD

PS

PS

η

D

(d3)

ψ

f1 = 30MHz, f2 = 30.001MHz, V

f = 150MHz, V

= 50V, I

DD

f1 = 30MHz, f2 = 30.001MHz, V

f1 = 30MHz, f2 = 30.001MHz, V

f1 = 30MHz, V

= 50V, I

DD

DQ

DD

= 250mA, P

DQ

DD

DD

= 250mA, P

= 50V, I

= 50V, I

= 50V, I

= 250mA, P

DQ

= 150W 11

out

= 250mA, P

DQ

= 250mA, P

DQ

= 150W CW

out

= 150W

out

= 150W

out

= 150W

out

70:1 VSWR - All Phase Angles, 0.2mSec X 20% Duty Factor

PEP

PEP

PEP

1

1

1

18

dB

50 %

-32 dBc

No Degradation in Output Power

Class A Characteristics

Symbol Test Conditions Min Typ Max Unit

G

PS

IMD

IMD

(d3)

(d9-d13)

V

= 50V, I

DD

= 3A, P

DQ

= 150W

out

, f1 = 30MHz, f2 = 30.001MHz

PEP

1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone

Microsemi reserves the right to change, without notice, the specications and information contained herein.

20

-50

-75

dB

050-4936 Rev G 12-2013

Typical Performance Curves

, DRAIN CURRENT (A)

D

I

V

, DRAIN-TO-SOURCE VOLTAGE (V)

)

DS(ON

FIGURE 1, Output Characteristics

C, CAPACITANCE (pF)

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

FIGURE 3, Capacitance vs Drain-to-Source Voltage

14V

10V
9V

8V

7V

6V

5V

4V

C

C

C

250µs PULSE

TEST<0.5 % DUTY

CYCLE

TJ= -55°C

TJ= 25°C

TJ= 125°C

, DRAIN CURRENT (A)

D

I

VGS, GATE-TO-SOURCE VOLTAGE (V)

FIGURE 2, Transfer Characteristics

iss

oss

rss

, DRAIN CURRENT (V)
I

D

T

J

T

C

I

DMax

R

= 125°C

= 75°C

Pdmax

ds(on)

DC line

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

FIGURE 4, Forward Safe Operating Area

−50

−45

−40

−35

−30

−25

−20

0 50 100 150 200 250

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

10

-5

10

-4

10

-3

10

-2

10 1.0

0

50

100

150

200

250

300

0 5 10 15 20

Typical Performance Curves

D = 0.9

0.7

VRF150(MP)

0.5

0.3

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

RECTANGULAR PULSE DURATION (seconds)

0.1

0.05

SINGLE PULSE

Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration

Vdd=50V, Idq = 250mA,

Freq=150MHz

Vdd=50V, Idq = 250mA,

)

IM3

IM5

PEP

OUTPUT POWER (W

IMD, INTERMODULATION DISTORTION (dB)

P

, OUTPUT POWER (WATTS PEP)

out

Figure 6. IMD versus P

OUT

P

Note:

t

1

DM

P

Peak TJ = PDM x Z

Freq=150MHz

, INPUT POWER (WATTS PEP)

out

Figure 7. P

t

2

= Pulse D uration

t

1

Duty Fa ctor D =

Vdd=50V

versus P

OUT

θJC + TC

t

1

/

t

2

Vdd=40V

IN

050-4936 Rev G 12-2013

+ 50VDC

+

C8

C4

C6

C7

L2

C3

R2

R1

C5

L1

C2

C1

Bias
0-12V

C9

C10

RF
Input

RF
Output

C1 -- 470 pF Dipped Mica
C2, C5, C6 - C9 -- 0.1uF SMT
C3 -- 200pF ATC 700C
C4 -- 15pF, ATC 700C
C10 -- 10uF, 100V Electrolytic

L1 - VK200-4B
L2 -- 2 Ferrite beads, 2.0 uH
R1, R2 -- 51 7, 1 W Carbon
R3 -- 3.3 7, 1 W Carbon
T1 -- 9:1 Transformer
T2 -- 1:9 Transformer

DUT

T2

R3

30 MHz test Circuit

VRF150(MP)

150 MHz test Circuit

RF
Input

Bias
0-12V

R1

C4

+

C5

C1

L1

C3 C2

C1, C2, C8 -- Arco 463 or equivalent
C3 -- 25pF, Unelco
C4 -- 0.1uF, Ceramic
C5 -- 1.0 uF, 15 WV Tantalum
C6 -- 250pF, Unelco J101
C7-- 25pF, Unelco J101
C9 -- Arco 262 or equivalent
C10 -- 0.05uF, Ceramic
C11 -- 15uF, 60WV Electrolytic

R3

R2

L4

DUT

C10C11

L2

C6

RFC1

L3

C7

+

+ 50VDC

C9

RF
Output

C8

050-4936 Rev G 12-2013

VRF150(MP)

Adding MP at the end of P/N species a matched pair where V

is matched between the two parts. VTH values

GS(TH)

are marked on the devices per the following table.

Code Vth Range Code 2 Vth Range

A 2.900 - 2.975 M 3.650 - 3.725

B 2.975 - 3.050 N 3.725 - 3.800

C 3.050 - 3.125 P 3.800 - 3.875

D 3.125 - 3.200 R 3.875 - 3.950

E 3.200 - 3.275 S 3.950 - 4.025

F 3.275 - 3.350 T 4.025 - 4.100

G 3.350 - 3.425 W 4.100 - 4.175

H 3.425 - 3.500 X 4.175 - 4.250

J 3.500 - 3.575 Y 4.250 - 4.325

K 3.575 - 3.650 Z 4.325 - 4.400

V

values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%.

TH

Q

PIN 1 - SOURCE
PIN 2 - GATE
PIN 3 - SOURCE
PIN 4 - DRAIN

J

H

.5” SOE Package Outline
All Dimensions are ± .005

A
U

M

1

4

32

M

R

B

D

K

C

E

Seating Plane

DIM

A 0.096 0.990 24.39 25.14

B 0.465 0.510 11.82 12.95

C 0.229 0.275 5.82 6.98

D 0.216 0.235 5.49 5.96

E

H 0.144 0.178 3.66 4.52

J 0.003 0.007 0.08 0.17

K 0.435 11.0

M 45° NOM 45° NOM

Q 0.115 0.130 2.93 3.30

R 0.246 0.255 6.25 6.47

U 0.720 0.730 18.29 18.54

INCHES MILLIMETERS

MIN MAX MIN MAX

0.084 0.110 2.14 2.79

050-4936 Rev G 12-2013

VRF150(MP)

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050-4936 Rev G 12-2013