Page 1
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
/R
DSS
BV
DGS
-30V 0.6Ω -4.0A VP3203N3 VP3203N8 VP3203ND
*Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
†
MIL visual screening available.
DS(ON)
(max) (min) TO-92 TO-243AA* Die
I
D(ON)
Order Number / Package
Product marking for TO-243AA:
VP3203
†
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
and fast switching speeds
ISS
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
VP2L❋
Where ❋ = 2-week alpha date code
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermallyinduced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
S G D
TO-92
Note: See Package Outline section for dimensions.
1
G
D
S
TO-243AA
(SOT-89)
D
Page 2
Thermal Characteristics
VP3203
Package I
(continuous)* ID (pulsed) Power Dissipation
D
θ
jc
θ
ja
IDR*I
@ TA = 25°C °C/W °C/W
TO-92 -0.65A -4.0A 0.74W 125 170 -0.65A -4.0A
TO-243AA -1.1A -4.0A 1.6W
* I
(continuous) is limited by max rated Tj.
D
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
†
15 78
†
-1.1A -4.0A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -10mA
Gate Threshold Voltage -1.0 -3.5 V VGS = VDS, ID = -10mA
Change in V
with Temperature -5.5 mV/°CVGS = VDS, ID = -10mA
GS(th)
Gate Body Leakage -1.0 -100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current -10 µAV
-1 mA V
= 0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating
GS
= 125°C
T
A
ON-State Drain Current -14 A VGS = -10V, VDS = -5V
Static Drain-to-Source
ON-State Resistance
TO-92 1.0 Ω VGS = -4.5V, ID = -1.5A
SOT-89 1.0 Ω VGS = -4.5V, ID = -0.75A
TO-92 0.6 Ω V
= -10V, ID = -3A
GS
SOT-89 0.6 Ω VGS = -10V, ID = -1.5A
Change in R
Forward Transconductance 1.0 2.0 VDS = -25V, ID = -2A
with Temperature 1.0 %/°CVGS = -10V, ID = -1.5A
DS(ON)
Ω
Input Capacitance 200 300
Common Source Output Capacitance 100 120 pF
VGS = 0V, VDS = -25V
f = 1 MHz
Reverse Transfer Capacitance 45 60
Turn-ON Delay Time 10
Rise Time 15
Turn-OFF Delay Time 25
ns
VDD = -25V
ID = -2A
R
= 10Ω
GEN
Fall Time 25
Diode Forward Voltage Drop -1.6 V VGS = 0V, ISD = -1.5A
Reverse Recovery Time 300 ns VGS = 0V, ISD = -1A
DRM
Switching Waveforms and Test Circuit
INPUT
OUTPUT
0V
-10V
0V
V
DD
10%
t
d(ON)
t
(ON)
t
r
10%
90%
90%
t
d(OFF)
t
(OFF)
90%
10%
t
F
2
PULSE
GENERATOR
R
gen
INPUT
D.U.T.
OUTPUT
R
L
V
DD
Page 3
Typical Performance Curves
VP3203
Output Characteristics
-20
-16
-12
(amperes)
-8
D
I
-4
0
0-5-10 -15 -25 -30-20
Transconductance vs. Drain Current
5
V
= -25V
DS
4
VDS (volts)
Saturation Characteristics
-20
V
= -10V
V
= -10V
GS
-16
GS
-8V
-8V
-6V
-4V
-3V
-12
(amperes)
-8
D
I
-4
0
0-2-4-6 -10-8
-6V
-4V
-3V
VDS (volts)
Power Dissipation vs. Temperature
2.0
TO-243AA
1.6
3
(siemens)
2
FS
G
1
0
0-1-2-3 -5-4
ID (amperes) TA (°C)
Maximum Rated Safe Operating Area
-10
TO-243AA(DC)
-1.0
(amperes)
D
I
-0.1
TO-92 (DC)
TO-92 (pulsed)
TA = 125°C
TA = 25°C
TA = -55°C
TO-243AA (pulsed)
1.2
(watts)
D
0.8
P
0.4
0
1.0
0.8
0.6
0.4
TO-92
0 15010050
Thermal Response Characteristics
TO-243AA
T
= 25°C
A
P
= 1.6W
D
1257525
-0.01
-0.1 -100-10-1.0
T= 25
A
C°
(volts)
V
DS
0.2
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1.0
tp (seconds)
TO-92
P
= 1W
D
T
= 25°C
C
3
Page 4
Typical Performance Curves
BV
Variation with Temperature
DSS
1.1
2.0
1.6
VP3203
On-Resistance vs. Drain Current
VGS = -5V
1.0
(normalized)
DSS
BV
0.9
-50 0 50 100 150
Tj (°C)
Transfer Characteristics
-10
°C
= -55
T
-8
-6
(amperes)
-4
D
I
-2
VDS = -25V
A
125°C
25°C
1.2
(ohms)
0.8
DS(ON)
R
0.4
0
0-4-8-12 -20-16
I
(amperes)
D
V
and RDS Variation with Temperature
(th)
1.4
1.2
1.0
(normalized)
GS(th)
0.8
V
0.6
R
DS(ON)
VGS = -10V
@ -10V, -3A
V
(th)
@ -10mA
1.4
1.2
1.0
0.8
0.6
(normalized)
DS(ON)
R
0
0-2-4-6-8-10
(volts)
V
GS
Capacitance vs. Drain-to-Source Voltage
300
f = 1MHz
225
150
C (picofarads)
75
0
-0 -10 -20 -30
C
ISS
C
OSS
C
RSS
VDS (volts)
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
-50 0 50 100 150
Tj (°C)
Gate Drive Dynamic Characteristics
-10
-8
= -10V
V
DS
-6
= -20V
(volts)
GS
-4
V
-2
V
DS
335pF
200 pF
0
0
1
2
3
45
QG (nanocoulombs)
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
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