Datasheet vp2410l Datasheet

PRODUCT SUMMARY

VP2410L

Vishay Siliconix

P-Channel 240-V (D-S) MOSFET

V

Min (V)

(BR)DSS

–240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18

r

DS(on)

Max (W)

V

(V) ID (A)

GS(th)

FEATURES BENEFITS APPLICATIONS

D High-Side Switching
D Secondary Breakdown Free: –255 V
D Low On-Resistance: 8 W
D Low-Power/Voltage Driven
D Excellent Thermal Stability

S

G

D

D Ease in Driving Switches
D Full-Voltage Operation
D Low Offset Voltage
D Easily Driven Without Buffer
D No High-Temperature “Run-Away”

TO-226AA

(TO-92)

1

2

3

Device Marking

Device Marking

Front View

Front View

“S” VP

2410L

xxyy

“S” = Siliconix Logo

“S” = Siliconix Logo

xxyy = Date Code

xxyy = Date Code

D Drivers: Relays, Solenoids, Lamps,

Hammers, Displays, Memories,
Transistors, etc.

D Power Supply, Converters
D Motor Control
D Switches

Top View

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limits Unit

Drain-Source Voltage V
Gate-Source Voltage V

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current

Power Dissipation

Thermal Resistance, Junction-to-Ambient R
Operating Junction and Storage Temperature Range TJ, T

Notes
a. Pulse width limited by maximum junction temperature.

Document Number: 70211
S-04279—Rev. D, 16-Jun-01

a

_

TA= 25_C
TA= 100_C

TA= 25_C
TA= 100_C

I

I

DM

P

thJA

DS
GS

D

D

stg

–240

"20
–0.18
–0.11
–0.72

0.8

0.32
156

–55 to 150

V

A

W

_C/W

_C

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11-1

VP2410L

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions Min Typ

Static

Limits

a

Max Unit

Drain-Source Breakdown Voltage V

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance
Common Source Output Conductance

b

b

b

b

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

fs

g

os

VGS = 0 V, ID = –5 mA
VGS = 0 V, ID = –10 mA
VDS = VGS, ID = –1 mA –2.1

VDS = VGS, ID = –2.5 mA –0.8 –2.2 –2.5
VDS = 0 V, VGS = "20 V "10

TJ = 125_C

VDS = –180 V, VGS = 0 V –1

TJ = 125_C

VDS = –10 V, VGS = –4.5 V –150 –300 mA

VGS = –10 V, ID = –0.1 A 6
VGS = –4.5 V, ID = –0.1 A 8 10

TJ = 125_C

VDS = –10 V, ID = –0.1 A 125 175

VDS = –10 V, ID = –0.05 A 0.125

–240 –255

–255

14.5 20

"50

–100

V

nA

mA

W

mS

Dynamic

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

Switching

Turn-On Time

Turn-Off Time

Notes
a. For DESIGN AID ONLY, not subject to production testing. VPDV24
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.

c

t

d(on)

t

d(off)

oss

rss

t

t

iss

r

f

VDS =–25 V, VGS = 0 V

f = 1 MHz

f = 1 MHz

VDD = –25 V, RL = 250 W

ID ^ –0.1 A, V

RG = 25 W

= –10 V

GEN

G

65 95
25 30
12 15

7 15

18 30
45 70

45 60

pF

ns

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11-2

Document Number: 70211

S-04279—Rev. D, 16-Jun-01

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

VP2410L

Vishay Siliconix

–500

–400

–300

–200

– Drain Current (mA)

D

I

–100

0

0 –50 –2.0

–500

–400

–300

–200

– Drain Current (mA)

D

I

–100

Ohmic Region Characteristics Output Characteristics for Low Gate Drive

VGS = –10 V

–1

V

–2 –3 –4 –0.4 –0.8 –1.2 –1.6

– Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)

DS

–5 V

–4.5 V

–4 V

–3 V

Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage

VDS = –15 V

TJ = –55_C

25_C

125_C

–100

–80

–60

–40

– Drain Current (mA)

D

I

–20

0

14

12

10

8

6

– On-Resistance ( Ω )

4

DS(on)

r

2

VGS = –4 V

–3.6 V

–3.0 V

ID = –0.20 A

ID = –0.1 A

–3.4 V

–3.2 V

–2.8 V

–2.6 V

0

–10 –50–4 –20

16

14

12

10

8

– Drain-Source On-Resistance ( Ω )

DS(on)

r

6

Document Number: 70211
S-04279—Rev. D, 16-Jun-01

On-Resistance vs. Drain Current

VGS = –4.5 V

–1000 –500 –50 –10 150

0

–2 –3 –4

V

– Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)

GS

–8 –12 –16

Normalized On-Resistance

vs. Junction Temperature

VGS = –10 V

= –0.2 A

I

D

20 70 110

– Junction Temperature (_C)

T

J

–200 –300 –400

– Drain Current (mA)

I

D

2.25

2.00

1.75

1.50

1.25

(Normalized)

1.00

– Drain-Source On-Resistance ( Ω )

0.75

DS(on)

r

0.50

VGS = –4.5 V

= –0.1 A

I

D

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11-3

VP2410L

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

–10

–1

–0.1

– Drain Current (mA)

D

I

125_C

–0.01

–1.20 –50

–12

ID = –100 mA

–10

–8

–6

Threshold Region Capacitance

TJ = 150_C

150

125

100

C

25_C

–55_C

75

50

C – Capacitance (pF)

25

iss

C

oss

C

rss

0

–1.6 –2.0 –2.4 –2.8 –3.2

–3.6

Gate Charge Load Condition Effects on Switching

100

0

–10

– Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)

V

DS

VDS = –120 V

10

VGS = 0 V
f = 1 MHz

–20 –30 –40

t

d(off)

t

f

t

r

t

d(on)

–4

– Gate-to-Source Voltage (V)

GS

–2

V

0

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01

–192 V

– Switching Time (ns)

t

VDD = –25 V
R

= 25 W

G

= 0 to –10 V

V

GS

1

1000 –1000

200 300 400

– Total Gate Charge (pC)

Q

g

500

–10

–100

I

– Drain Current (mA)

D

Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)

Duty Cycle = 0.5

0.2

0.02

0.01

0.1

0.05

Single Pulse

10.1 10 K

10 100 1 K

t

– Square Wave Pulse Duration (sec)

1

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM – TA = PDMZ

2

thJA

t
t

thJA

1
2

(t)

= 156_C/W

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11-4

Document Number: 70211

S-04279—Rev. D, 16-Jun-01

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1