Datasheet VP2111K1, VP2110ND, VP2106N3 Datasheet (Supertex)

1

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

VP2106

VP2110

Note: See Package Outline section for dimensions.

Package Options

P-Channel Enhancement-Mode
Vertical DMOS FETs

TO-92

Applications

❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Features

❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C

ISS

and fast switching speeds

❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher­ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.

BV

DSS

/R

DS(ON)

I

D(ON)

BV

DGS

(max) (min) TO-92 TO-236AB* Die

†

-60V 12Ω -0.5A VP2106N3 — —

-100V 12Ω -0.5A — VP2110K1 VP2110ND

Product marking for SOT-23:

P1A❋

where ❋ = 2-week alpha date code

Order Number / Package

†MIL visual screening available.
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Ordering Information

S G D

TO-236AB

(SOT-23)

top view

SDG

Absolute Maximum Ratings

Drain-to-Source Voltage BV

DSS

Drain-to-Gate Voltage BV

DGS

Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C

*

Distance of 1.6 mm from case for 10 seconds.

2

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

0V

V

DD

R

gen

0V

-10V

VP2106/VP2110

Switching Waveforms and Test Circuit

Package ID (continuous)* ID (pulsed) Power Dissipation

θ

jc

θ

ja

IDR*I

DRM

@ TA = 25°C °C/W °C/W

TO-236AB -120mA -400mA 0.36W 200 350 -120mA -400mA
TO-92 -0.25A -0.8A 0.74W 125 170 -0.25A -0.8A
*

ID (continuous) is limited by max rated Tj.

Thermal Characteristics

Symbol Parameter Min Typ Max Unit Conditions

VP2110 -100
VP2106 -60

V

GS(th)

Gate Threshold Voltage -1.5 -3.5 V VGS = VDS, ID = -1.0mA

∆V

GS(th)

Change in V

GS(th)

with Temperature 5.8 6.5 mV/°CID = -1.0mA, V

GS

= V

DS

I

GSS

Gate Body Leakage -1.0 -100 nA VGS = ±20V, VDS = 0V

I

DSS

Zero Gate Voltage Drain Current -10 µAV

GS

= 0V, VDS = Max Rating

V

GS

= 0V, VDS = 0.8 Max Rating

T

A

= 125°C

I

D(ON)

ON-State Drain Current -0.50 -1.0 A VGS = -10V, VDS = -25V

R

DS(ON)

11 15 VGS = -5V, ID = -0.1A

9.0 12 VGS = -10V, ID = -0.5A

∆R

DS(ON)

Change in R

DS(ON)

with Temperature 0.55 1.0 %/°CV

GS

= -10V, ID = -0.5A

G

FS

Forward Transconductance 150 200 m VDS = -25V, ID = -0.5A

C

ISS

Input Capacitance 45 60

C

OSS

Common Source Output Capacitance 22 30 pF

C

RSS

Reverse Transfer Capacitance 3 8

t

d(ON)

Turn-ON Delay Time 4 5

t

r

Rise Time 5 8

t

d(OFF)

Turn-OFF Delay Time 5 9

t

f

Fall Time 4 8

V

SD

Diode Forward Voltage Drop -1.2 -2.0 V ISD = -0.5A, VGS = 0V

t

rr

Reverse Recovery Time 400 ns ISD = -0.5A, VGS = 0V

Notes:

1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

BV

DSS

Drain-to-Source
Breakdown Voltage

Electrical Characteristics (@ 25°C unless otherwise specified)

VI

D

= -1.0mA, VGS = 0V

-1 mA

Static Drain-to-Source
ON-State Resistance

VGS = 0V, VDS = -25V
f = 1 MHz

VDD = -25V

ns ID = -0.5A

R

GEN

= 25Ω

Ω

Ω

3

Typical Performance Curves

VP2106/VP2110

Output Characteristics

-2.0

-1.6

-1.2

-0.8

-0.4

0

Saturation Characteristics

-1.0

-0.8

-0.6

-0.4

-0.2

-0

Maximum Rated Safe Operating Area

-0.1 -100-10-1.0

-0.01

-0.1

-1.0

-0.001

Thermal Response Characteristics

Thermal Resistance (normalized)

1.0

0.8

0.6

0.4

0.2

0

0.001 100.01 0.1 1.0

Transconductance vs. Drain Current

Power Dissipation vs. Ambient Temperature

0 15010050

1.0

0.5

0

1257525

TO-236AB

VDS = 25V

TO-236AB (DC)

TO-236AB (pulsed)

TO-92 (DC)

0 -10 -20 -30 -50-40

0-2-4-6 -10-8

TO-92 (pulsed)

250

200

150

100

50

0

0 -0.2 -0.4 -0.6 -1.0-0.8

-7V

-6V

-5V

-4V

-3V

-8V

-9V

-7V

-6V

-5V

-4V

-8V

-9V

TA = 25°C

TO-236AB
P

D

= 0.36W

T

A

= 25°C

TO-92
P

D

= 1.0W

TA = 25°C

TO-92

VGS = -10V

VDS (volts)

I

D

(amperes)

I

D

(amperes)

VDS (volts)

V

GS

= -10V

G

FS

(millisiemens)

ID (amperes) TA (°C)

P

D

(watts)

TA = 125°C

T

A

= 25°C

T

A

= -55°C

VDS (volts)

I

D

(amperes)

tp (seconds)

4

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: [phone] • FAX: [phone]

www.supertex.com

11/12/01

©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.

VP2106/VP2110

Typical Performance Curves

Gate Drive Dynamic Characteristics

On-Resistance vs. Drain Current

Transfer Characteristics

Capacitance vs. Drain-to-Source Voltage

100

75

50

25

0

C (picofarads)

0 -10 -20 -30 -40

0-2-4-6-8-10

-1.0

-0.8

-0.6

-0.4

-0.2

0

-50 0 50 100 150

-1.1

-1.0

20

16

12

8

4

0

1.4

1.2

1.0

0.8

0.6

-10

-8

-6

-4

-2

0

-50 0 50 100 150

35 pF

VGS = -10V

125°C

0 -0.2 -0.4 -0.6 -1.0-0.8

f = 1MHz

C

ISS

C

OSS

C

RSS

-0.9

101 pF

2.0

1.6

1.2

0.8

0.4

0

V

(th)

@ 1mA

R

DS(ON)

@ -10V, 0.5A

25°C

0

1.0 2.0

R

DS(ON)

(ohms)

BV

DSS

(normalized)

Tj (°C)

I

D

(amperes)

BV

DSS

Variation with Temperature

VGS = -5V

Tj (°C)

V

GS(th)

(normalized)

V

(th)

and RDS Variation with Temperature

V

GS

(volts)

I

D

(amperes)

R

DS(ON)

(normalized)

VDS = -25V

T

A

= -55

°C

QG (nanocoulombs)

V

GS

(volts)

VDS (volts)

V

DS

= -40V

V

DS

= -10V