Datasheet vp2106 Datasheet

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

P-Channel Enhancement-Mode

YY = Year Sealed WW = Week Sealed = “Green” Packaging

S i V P

2 1 0 6

Y Y W W

GATE

SOURCE

DRAIN

Vertical DMOS FET

VP2106

Features

Free from secondary breakdown

►

Low power drive requirement

►

Ease of paralleling

►

Low C

►

High input impedance and high gain

►

Excellent thermal stability

►

Integral source-to-drain diode

►

and fast switching speeds

ISS

Applications

Motor controls

►

Converters

►

Ampliﬁers

►

Switches

►

Power supply circuits

►

Drivers (relays, hammers, solenoids, lamps,

►

General Description

The Supertex VP2106 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefﬁcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

memories, displays, bipolar transistors, etc.)

Ordering Information

Device

Package Option

TO-92

BV

DSS

/BV

(V)

DGS

VP2106 VP2106N3-G -60 12 -500

-G indicates package is RoHS compliant (‘Green’)

R

DS(ON)

(max)

(Ω)

I

D(ON)

(min)

(mA)

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BV

Drain-to-gate voltage BV

Gate-to-source voltage ±20V

Operating and storage temperature -55OC to +150OC

Soldering temperature* 300OC

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

DSS

DGS

Pin Conﬁguration

TO-92 (N3)

Product Marking

Package may or may not include the following marks: Si or

TO-92 (N3)

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Thermal Characteristics

90%

10%

90%

10%

PULSE

GENERATO

R

V

DD

R

L

Output

D.U.T

.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

OUTPUT

0V

V

DD

R

GEN

0V

-10V

Package

TO-92 -250 -800 0.74 125 170 -250 -800

Notes:

† ID (continuous) is limited by max rated Tj .

(continuous)

I

D

(mA)

VP2106

I

†

D

(pulsed)

(mA)

Power Dissipation

@TA = 25OC

(W)

θ

jc

(OC/W)

θ

ja

(OC/W)

I

DR

(mA)

†

I

DRM

(mA)

Electrical Characteristics (T

= 25OC unless otherwise speciﬁed)

A

Sym Parameter Min Typ Max Units Conditions

BV

V

ΔV

GS(th)

I

GSS

Drain-to-source breakdown voltage -60 - - V VGS = 0V, ID = -1.0mA

DSS

Gate threshold voltage -1.5 - -3.5 V VGS = VDS, ID= -1.0mA

Change in V

with temperature - 5.8 6.5 mV/OC VGS = VDS, ID= -1.0mA

GS(th)

Gate body leakage - -1.0 -100 nA VGS = ± 20V, VDS = 0V

- - -10 µA VGS = 0V, VDS = Max Rating

I

DSS

I

D(ON)

R

DS(ON)

ΔR

DS(ON)

G

C

t

d(ON)

t

d(OFF)

V

t

Notes:

1.

2.

OSS

RSS

t

Zero gate voltage drain current

- - -1.0 mA

VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C

On-state drain current -0.5 -1.0 - A VGS = -10V, VDS = -25V

Static drain-to-source on-state resistance

- 11 15

VGS = -5.0V, ID = -100mA

Ω

- 9.0 12 VGS = -10V, ID = -500mA

Change in R

Forward transductance 150 200 - mmho VDS = -25V, ID = -500mA

FS

Input capacitance - 45 60

ISS

Common source output capacitance - 22 30

Reverse transfer capacitance - 3.0 8.0

with temperature - 0.55 1.0 %/OC VGS = -10V, ID = -500mA

DS(ON)

VGS = 0V,

pF

VDS = -25V, f = 1.0MHz

Turn-on delay time - 4.0 5.0

Rise time - 5.0 8.0

r

Turn-off delay time - 5.0 9.0

Fall time - 4.0 8.0

f

Diode forward voltage drop - -1.2 -2.0 V VGS = 0V, ISD = -500mA

SD

Reverse recovery time - 400 - ns VGS = 0V, ISD = -500mA

rr

All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) All A.C. parameters sample tested.

ns

VDD = -25V, ID = -500mA,

R

GEN

= 25Ω

Switching Waveforms and Test Circuit

2

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Typical Performance Curves

Output Characteristics

-2.0

-1.6

-1.2

-0.8

-0.4

0

Saturation Characteristics

-1.0

-0.8

-0.6

-0.4

-0.2

-0

Maximum Rated Safe Operating Area

-0.1 -100-10-1.0

-0.01

-0.1

-1.0

-0.001

Thermal Response Characteristics

)d e

zilamro

n( ecn

a

tsise

R

lamr

e hT

1.0

0.8

0.6

0.4

0.2

0

0.001 1

00.01 0.1 1.0

Transconductance vs. Drain Current

Power Dissipation vs. Ambient Temperatur

e

0 15010050

1.0

0.5

0

1257525

VDS = 25V

TO -9 2 ( DC )

0 -

10 -20 -30 -50-40

0 -2 -4 -

6 -10-8

TO -9 2 ( pu lse d)

250

200

150

100

50

0

0 -0.2 -0.4 -0.6 -1.0-0.8

-7V

-6V

-5V

-4V

-3V

-9V

-7V

-6V

-5V

-4V

-8V

-9V

TA = 25°C

TO -9 2

PD= 1.0W

TA = 2 5°C

TO -9 2

V

GS

= -10V

VDS (volts)

I

D

)sere

p m

a(

I

D

)serepma(

VDS (volts)

VGS= -10V

G

SF

)sne

m ei

si llim(

ID (amperes) TA (°C)

P

D

)sttaw(

TA = 125°C

TA = 25°C

TA= -55°C

VDS (volts)

I

D

)ser

e pma(

tp (seconds)

-8V

VP2106

3

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Typical Performance Curves (cont.)

Gate Drive Dynamic Characteristics

On-Resistance vs. Drain Current

Transfer Characteristics

Capacitance vs. Drain-to-Source Voltage

100

75

50

25

0

)sdarafocip

(

C

0 -10 -20 -30 -40

0 -2 -4 -6 -

8 -10

-1.0

-0.8

-0.6

-0.4

-0.2

0

-50 0 50 100 150

-1.1

-1.0

20

16

12

8

4

0

1.4

1.2

1.0

0.8

0.6

-1

0

-8

-6

-4

-2

0

-50 0

50 100 150

35 pF

VGS = -10V

125°

C

0 -0.2 -0.4 -0.6 -1.0-0.8

f = 1MHz

C

ISS

C

OSS

C

RSS

-0.9

101 pF

2.0

1.6

1.2

0.8

0.4

0

V

(th)

@ 1mA

R

DS(ON)

@ -10V, 0.5A

25

°C

0

1.0

2.0

R

)NO(SD

)smho(

V B

SSD

)d e

zi lam

ro n(

Tj (°C)

I

D

(amperes)

BV

DSS

Variation with Temperature

VGS = -5V

Tj (°C)

V

) h

t(SG

)dezilamron(

V

(th)

and RDS Variation with Temperature

VGS (volts)

I

D

)ser

e p

m a(

R

)NO(SD

)dezilamron(

VDS = -25V

T

A

= -55

°C

QG (nanocoulombs)

V

SG

)stlov(

VDS (volts)

VDS= -40V

V

DS

= -10V

VP2106

4

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com

.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

3-Lead TO-92 Package Outline (N3)

Seating Plane

1

2

3

Front View

Side View

Bottom View

E1

E

D

e1

L

e

c

1 2 3

b

A

VP2106

Symbol A b c D E E1 e e1 L

MIN .170 .014

Dimensions

(inches)

NOM - - - - - - - - -

MAX .210 .022

JEDEC Registration TO-92. * This dimension is not speciﬁed in the original JEDEC drawing. The value listed is for reference only. † This dimension is a non-JEDEC dimension.

Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408.

(The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline

†

.014

.022

†

.175 .125 .080 .095 .045 .500

†

.205 .165 .105 .105 .055 .610*

information go to http://www.supertex.com/packaging.html.)

Doc.# DSFP-VP2106 A012409

5