Datasheet VP0808L Datasheet (Supertex)

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Page 1

P-Channel Enhancement-Mode Vertical DMOS FETs

Ordering Information

DSS

DGS

-80V 5.0Ω -1.1A VP0808L

DS(ON)

(max) (min) TO-92

D(ON)

Order Number / Package

VP0808

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low C ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices

and fast switching speeds

ISS

Applications

❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Package Option

Absolute Maximum Ratings

Drain-to-Source Voltage BV Drain-to-Gate Voltage BV Gate-to-Source Voltage ± 30V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C

Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

DSS

DGS

Note: See Package Outline section for dimensions.

S G D

TO-92

Page 2

Thermal Characteristics

VP0808

Package I

(continuous)* ID (pulsed) Power Dissipation

°C/W °C/W

TO-92 -0.28A -3A 1W 125 170

* I

(continuous) is limited by max rated Tj.

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol Parameter Min Typ Max Unit Conditions

DSS

GS(th)

GSS

DSS

D(ON)

DS(ON)

ISS

OSS

RSS

d(ON)

d(OFF)

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Drain-to-Source Breakdown Voltage -80 V VGS= 0V, ID =-10µA Gate Threshold Voltage -1.0 -4.5 V VGS = VDS, ID = -1mA Gate Body Leakage -100 nA VGS = ±20V, VDS = 0V Zero Gate Voltage Drain Current -10 VGS = 0V, VDS = Max Rating

-500 µAV

= 0V, VDS = Max Rating

= 125°C

ON-State Drain Current -1.1 A VGS = -10V, VDS = -15V Static Drain-to-Source ON-State Resistance 5.0 Ω VGS = -10V, ID = -1A Forward Transconductance 200 m VDS = -10V, ID = -0.5A

Ω

Input Capacitance 150

= 0V, VDS = -25V

Common Source Output Capacitance 60 pF

f = 1MHz

Reverse Transfer Capacitance 25 Turn-ON Delay Time 15 Rise Time 40 Turn-OFF Time 30

VDD = -25V, ID = -0.5A

= 25Ω

GEN

Fall Time 30 Diode Forward Voltage Drop -1.2 V VGS = 0V, ISD = -0.9A

Switching Waveforms and Test Circuit

INPUT

-10V

OUTPUT

10%

d(ON)

(ON)

10%

90%

d(OFF)

(OFF)

90%

10%

PULSE

GENERATOR

gen

INPUT

1235 Bordeaux Drive, Sunnyvale, CA 94089

D.U.T.

OUTPUT

11/12/01

TEL: (408) 744-0100 • FAX: (408) 222-4895

www.supertex.com