Datasheet VN771P Datasheet (SGS Thomson Microelectronics)

VN771P

QUAD SMART POWER SOLID STATE RELAY

FOR COMPLETE H BRIDGE CONFIGURATIONS



September 1998

SO-28

TYPE R

DS(on)

*I

OUT

V

CC

VN77 1P 0.135 Ω 14 A 26 V

* Total resistanceof one side in bridge configuration

■ SUITED ASLOWVOLTAGEBRIDGE

■ LINEARCURRENT LIMITATION

■ VERYLOW STAND-BY POWER

DISSIPATION

■ SHORTCIRCUIT PROTECTED

■ STATUSFLAG DIAGNOSTICS

■ OPENDRAIN DIAGNOSTICSOUTPUT

■ INTEGRATEDCLAMPINGCIRCUITS

■ UNDER-VOLTAGEPROTECTION

■ ESDPROTECTION

DESCRIPTION

The VN771P is a device formed by three
monolithic chips housed in a standard SO28
package: a double high side and two low side
switches. Both the double high side and low side
switches are made using STMicroelectronics
VIPower technology. This device is suitable to
drive a DC motor in a bridge configurationas well
as to be used as a quad switch for any low
voltage application. The dual high side switches
have built-in thermal shut-down to protect the
chip from over temperature and short circuit,
status output to provide indication for open load
in off and on state, overtemperature conditions
and stuck-on to V

CC

. The low side switches are
two OMNIFET types (fully autoprotected Power
MOSFET in VIPower technology). They have
built-in thermalshut-down, linear current limitation
and overvoltage clamping. Fault feedback for
thermal intervention can be detected by
monitoringthe voltage at the input pin.

DUALHIGH-SIDE SWITCH
From the falling edge of the input signal, the

status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature(tpovl)
and in case of open open load (

tpol

) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against

short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140

o

C. When this temperature returns to 125oC
the switch is automatically turned on again. In
short circuit the protectionreacts with virtually no
delay, the sensor (one for each channel) being
locatedinside each of the two Power MOS areas.
This positioning allows the device to operate with
one channelin automaticthermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (V

demag

)
of -18V. This function allows to greatly reduces
the power dissipationaccording to the formula:

P

dem

=0.5• L

load

• (I

load

)2• [(VCC+V

demag

)/V

demag

] • f

wheref = switching frequencyand
V

demag

= demagnetizationvoltage.

In this device if the GND pin is disconnected,with
V

CC

not exceeding 16V, both channel will switch

off.
LOW-SIDESWITCHES

During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I

iss

) flows into the Input pin in order to

supplythe internalcircuitry.

1/11

BLOCK DIAGRAM

VN771P

2/11

CONNECTION DIAGRAM

PIN FUNCTION

No NAME FUNCTI O N

1, 3, 25, 28 DRAI N 3 Drain of S wit c h 3 (low -s ide switch)

2 INP UT 3 I nput of Switch 3 (low-side switch)

4, 11 N.C. Not Connected

5, 10, 19, 2 4 V

CC

Drain of S wit c h es 1and 2 (high- side s wit ches) and Power S upply Volt age
6 GND Grou nd of Switches 1 and 2 (high -s ide switches)
7 INP UT 1 I nput of Switch 1 (high-side s wit c h )
8 DIAGNO S T IC Diagn os tic of Switc hes 1 and 2 (h igh-side switches )
9 INP UT 2 I nput of Switch 2 (high-side s wit c h )

12, 14, 15, 1 8 DRAIN 4 Drain of S witc h 4 (low-side switch)

13 INP UT 4 I nput of Switch 4 (low-side switch)
16, 17 SO URC E 4 Source of S w it ch 4 (low-side switch)
20, 21 SO URC E 2 Source of S w it ch 2 (high- s ide s wit ch)
22, 23 SO URC E 1 Source of S w it ch 1 (high- s ide s wit ch)
26, 27 SO URC E 3 Source of S w it ch 3 (low-side switch)

VN771P

3/11

PROTECTION CIRCUITS

DUALHIGH SIDESWITCH
The simplest way to protect the device against a

continuous reverse battery voltage (-26V) is to
insert a a small resistor betweenpin 2 (GND) and
ground. The suggested resistance value is about
150Ω. In any case the maximum voltage drop on
this resistorshould not overcome0.5V.

If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the
device ground (see application circuit in fig. 3),
which becomes the common signal GND for the
whole control board avoiding shift of V

ih,Vil

and

V

stat

.
LOW SIDESWITCHES
The devices integrate:

- OVERVOLTAGE CLAMP PROTECTION:

internally set at 42V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving

inductive loads.

- OVERTEMPERATUREAND SHORT CIRCUIT

PROTECTION: these are based on sensing
the chiptemperature and are notdependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperaturecutout occurs at
minimum 150

o

C. The device is automatically
restarted when the chip temperature falls
below 135

o

C.

- STATUS FEEDBACK: In the case of an

overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.

Additional features of these devices are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a smallincrease in R

DS(on)

).

TRUTH TABLE (forDual high-sideswitch only)

INP U T 1 INP UT 2 SO URC E 1 SOUR CE 2 DIAGNOSTIC

Normal Operation L

H

L

H

L
H
H

L

L

H

L

H

L
H
H

L

H
H
H

H
Under-voltage X X L L H
Ther mal Shut dow n

Channel 1

HXLX L

Channel 2

XHXL L

Open Load

Channel 1

H

L

X

L

H

L

X

L

L

L

Channel 2

X

L

H

L

X

L

H

L

L

L
Out put Short ed t o V

CC

Channel 1

H

L

X

L

H
H

X

L

L

L

Channel 2

X

L

H

L

X

L

H
H

L

L

NOTE: The low-side switches have the fault feedback which can be detected by monitoringthe voltage at the input pins.
L = Logic LOW, H = Logic HIGH, X = Don’t care

VN771P

4/11

ABSOLUTE MAXIMUMRATING (-40oC<Tj<150oC)
HIGHSIDE SWITCH

Symbol Parameter Value Unit

V

(BR)DSS

Drain-So urc e B reakdow n Voltag e 40 V

I

OUT

Outpu t Current (cont . ) 14 A

I

R

Revers e Out put Cur re nt -14 A

I

IN

Input Current ±10 mA

-V

CC

Revers e Supply Voltage -4 V

I

STAT

Status Current ±10 m A

V

ESD

Elect ro st a t ic Dischar ge (C = 100 pF , R =1. 5 KΩ) 2000 V

P

tot

Power Dissipation at Tc=25oC Inte r nally Limit ed W

T

j

Junct ion Operating T emperature -40 to 150

o

C

T

stg

Stora ge Tem perat ure -55 to 150

o

C

LOW SIDESWITCH

Symb o l Param et er Val u e Unit

V

(BR)DSS

Drain-So urce Bre akdown Vo lt a ge Int er na lly Clamped V

V

IN

Input Voltage 18 V

I

D

Drain Current Int er nally Lim it ed A

I

R

Revers e DC Out put Cur r ent -28 A

V

ESD

Elect r ost a t ic Disc harge (C = 100 pF, R =1. 5 K Ω)2000V

P

tot

Tot al Diss ipa ti on at Tc=25oC I nternally Limited W

T

j

Operating Junct io n T e m pe ra t ure Int er nally Lim it ed

o

C

T

stg

Stora ge Tem perat ure -55 to 150

o

C

THERMAL DATA

R

thj-case

R

thj-case

R

thj-amb

Thermal Resistan ce Junction-case (High-side switch) Max
Therma l Resistance Jun c t ion -c as e (Low -s ide switc h) Max
Therma l Resistance Jun c t ion -am bient Max

20
20
60

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS FOR DUALHIGH SIDE SWITCH

(8 < V

CC

< 16 V;-40 ≤ Tj≤ 125oC unless otherwise specified)

POWER

Symb o l Parameter Test Cond iti ons Min. Typ . Max. Unit

V

CC

Supply Voltage 6 13 26 V

In(*) Nominal C urrent T

c

=85oCV

DS(on)

≤ 0. 5 VCC=13V 3.4 5.2 A

R

on

On Stat e Res ist a nc e I

OUT=InVCC

=13V Tj=25oC0.065 0.1Ω

I

S

Supply Current Off St at e Tj=25oCVCC= 13 V 35 100 µA

V

DS(MAX)

Maxim um Volt age Drop I

OUT

=13A Tj=85oCVCC=13V 1.2 2 V

R

i

Outpu t t o G N D internal
Impeda nce

Tj=25oC51020KΩ

VN771P

5/11

SWITCHING

Symb o l Parameter Test Cond iti ons Min. Typ . Max. Unit

t

d(on)

(^) Turn-on Delay Time Of

Outpu t Current

R

out

=2.7Ω 535200µs

t

r

(^) Rise T ime Of Out put

Current

R

out

=2.7Ω 28 110 360 µs

t

d(off)

(^) Turn-of f Delay Time Of

Outpu t Current

R

out

=2.7Ω 10 140 500 µs

t

f

(^) Fall Ti m e O f Out p ut

Current

R

out

=2.7Ω 28 75 360 µs

(di/dt)

on

Turn-on Current Slope R

out

=2.7Ω 0.003 0.1 A/µ s

(di/dt)

off

Turn-of f Current Slope R

out

=2.7Ω 0.005 0.1 A/µ s

LOGIC INPUT

Symb o l Parameter Test Cond iti ons Min. Typ . Max. Unit

V

IL

Input Low Level
Voltage

1.5 V

V

IH

Input High Level
Voltage

3.5 (•)V

V

I(hyst.)

Input Hys teresi s
Voltage

0.2 0.9 1. 5 V

I

IN

Input Current VIN=5V Tj=25oC30100µA

V

ICL

Input Clamp V olt a ge IIN=10mA

I

IN

=-10mA

56

-0.7

7V

V

PROTECTION AND DIAGNOSTICS

Symb o l Parameter Test Cond iti ons Min. Typ . Max. Unit

V

STAT

Status Volt age Out put
Low

I

ST AT

=1.6mA 0.4 V

V

USD

Under Voltage S hut
Down

3.5 4.5 6 V

V

SCL

Status Clamp Voltage I

ST AT

=10mA

I

ST AT

=-10mA

56

-0.7

7V

V

T

TSD

Therma l Shut- d own
Temper at ur e

140 160 180

o

C

T

SD(hyst.)

Therma l Shut- d own
Hysteresis

50

o

C

T

R

Reset Tempera t ur e 125

o

C

V

OL

Open V olt a ge Lev el Off- Stat e (not e 2) 2.5 4 5 V

I

OL

Open Load Curren t
Level

On-State 0.6 0.9 1. 4 A

ELECTRICAL CHARACTERISTICS FOR DUALHIGH SIDE SWITCH (continued)

VN771P

6/11

Symb o l Parameter Test Cond iti ons Min. Typ . Max. Unit

t

povl

Statu s Del ay (note 3) 5 10 µs

t

pol

Status Delay (note 3) 50 500 2500 µs

(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
(^) See switching time waveform
() The V

IH

is internally clamped at 6V about. Itis possible to connect this pin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
note 1: The Nominal Current is the current at T

c

=85oC forbattery voltage of 13V which produces avoltage drop of 0.5 V

note 2: I

OL(off)

=(VCC-VOL)/R

OL

note 3: t

povltpol

: ISO definition

ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES

(T

case

=25oC unless otherwise specified)

OFF

Symb o l Parameter Test Cond iti ons Min. Typ . Max. Unit

V

CLAM P

Drain-source Clamp
Voltage

ID=10A Vin= 0 36 42 48 V

V

CLTH

Drain-source Clamp
Threshold Voltage

ID=2mA Vin= 0 35 V

V

INCL

Input-Source Rev erse
Clamp Voltage

Iin=-1mA -1 -0.3 V

I

DSS

Zero I nput Voltage
Drain C ur rent (V

in

=0)

V

DS

=13V Vin=0

V

DS

=25V Vin=0

50

200

µA
µA

I

ISS

Supply Current from
Input Pin

VDS=0V Vin=10V 250 500 µA

ON (∗)

Symb o l Parameter Test Cond iti ons Min. Typ . Max. Unit

V

IN(th)

Input T hreshold
Voltage

VDS=VinID+Iin=1mA 0.8 3 V

R

DS(on)

Static Drain-source On
Resist anc e

Vin=10V ID=10A
V

in

=5V ID=10A

0.035

0.05

Ω
Ω

DYNAMIC

Symb o l Parameter Test Cond iti ons Min. Typ . Max. Unit

g

fs

(∗)Forward

Transconduc t ance

VDS=13V ID= 10 A 14 18 S

C

oss

Output Capacitance VDS=13V f=1MHz Vin= 0 700 9 00 pF

ELECTRICAL CHARACTERISTICS FOR DUALHIGH SIDE SWITCH (continued)
PROTECTION AND DIAGNOSTICS

VN771P

7/11

SWITCHING (**)

Symb o l Parameter Test Cond iti ons Min. Typ . Max. Unit

t

d(on)

t

r

t

d(off)

t

f

Turn-on Delay Time
Rise T ime
Turn-off Delay Time
Fall Time

VDD=15V Id=10A
V

gen

=10V R

gen

=10Ω

(see fi gur e 3)

100
330
400
155

200
600
700
300

ns
ns
ns
ns

t

d(on)

t

r

t

d(off)

t

f

Turn-on Delay Time
Rise T ime
Turn-off Delay Time
Fall Time

VDD=15V Id=10A
V

gen

=10V R

gen

= 1000 Ω

(see fi gur e 3)

450

1.7

7.5

3.4

700

3

10

5

ns

µs
µs
µs

(di/dt)

on

Turn-on Current Slope VDD=15V ID=10A

V

in

=10V R

gen

=10Ω

35 A/µs

Q

i

Total I npu t Ch arge VDD=12V ID=10A Vin=10V 60 nC

SOURCEDRAIN DIODE

Symb o l Parameter Test Cond iti ons Min. Typ . Max. Unit

V

SD

(∗) F orward On Voltage ISD=10A Vin=0 1.6 V

t

rr

(∗∗)

Q

rr

(∗∗)

I

RRM

(∗∗)

Revers e Recovery
Time
Revers e Recovery
Charge
Revers e Recovery
Current

I

SD

= 10 A di/dt = 100 A/µs

V

DD

=30V Tj=25oC

(see te s t circuit, figure 5)

180

0.45
7

ns

µC

A

PROTECTION

Symb o l Parameter Test Cond iti ons Min. Typ . Max. Unit

T

jsh

(∗∗) Overt em perature

Shutdown

150

o

C

T

jrs

(∗∗) Ov er tempera t ur e Reset 135

o

C

I

gf

(∗∗) Fault Sink Current Vin=10V VDS=13V

V

in

=5V VDS=13V

50
20

mA
mA

I

lim

Drain C ur rent Limit Vin=10V VDS=13V

V

in

=5V VDS=13V

20
20

28
28

40
40

A
A

t

dlim

(∗∗) St ep R es pon se

Current Limit

Vin=10V
V

in

=5V

25
70

40

120

µs
µs

E

as

(∗∗) Single Pulse A v alance

Energy

starting Tj=25oC
V

in

=10V VDD=20V

R

gen

=1KΩ L=10mH

2.5 J

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parametersguaranteed by design/characterization

ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued)

VN771P

8/11

TYPICALAPPLICATIONDIAGRAM

VN771P

9/11

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.65 0.104

a1 0.10 0.30 0.004 0.012

b 0.35 0.49 0.013 0.019

b1 0.23 0.32 0.009 0.012

C 0.50 0.020

c1 45 (typ.)

D 17.7 18.1 0.697 0.713
E 10.00 10.65 0.393 0.419

e 1.27 0.050

e3 16.51 0.650

F 7.40 7.60 0.291 0.299

L 0.40 1.27 0.016 0.050

S 8 (max.)

0016572

SO-28 MECHANICAL DATA

VN771P

10/11

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval ofSTMicroelectronics.

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 1998 STMicroelectronics –Printed inItaly – All Rights Reserved

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.

VN771P

11/11