Page 1
VN770P
QUAD SMART POWER SOLID STATE RELAY
FOR COMPLETE H BRIDGE CONFIGURATIONS
TYPE R
VN77 0P 0.270 Ω 9A 26V
* Total resistance of one side in bridge configuration
■ IDEALAS A LOWVOLTAGEBRIDGE
■ LINEARCURRENTLIMITATION
■ VERYLOW STAND-BY POWER
*I
DS(on)
OUT
V
CC
DISSIPATION
■ SHORTCIRCUIT PROTECTED
■ STATUSFLAG DIAGNOSTICS
■ OPENDRAIN DIAGNOSTICSOUTPUT
■ INTEGRATEDCLAMPING CIRCUITS
■ UNDER-VOLTAGE PROTECTION
■ ESDPROTECTION
DESCRIPTION
The VN770P is a device formed by three
monolithic chips housed in a standard SO28
package: a double high side and two low side
switches. Both the double high side and low side
switches are made using STMicroelectronics
VIPower technology. This device is suitable to
drive a DC motor in abridge configurationas well
as to be used as a quad switch for any low
voltage application. The dual high side switches
have built-in thermal shut-down to protect the
chip from over temperature and short circuit,
status output to provide indication for open load
in off and on state, overtemperature conditions
and stuck-on to V
. The low side switches are
CC
two OMNIFET types (fully autoprotected Power
MOSFET in VIPower technology). They have
built-in thermalshut-down, linearcurrent limitation
and overvoltage clamping. Fault feedback for
thermal intervention can be detected by
monitoringthe voltageat the input pin.
DUALHIGH-SIDESWITCH
From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (
) respectively.
tpol
This feature allows to discriminate the nature of
the detected fault. To protect the device against
SO-28
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
o
140
C. When this temperature returns to 125oC
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
locatedinside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (V
demag
of -18V. This function allows to greatly reduces
the power dissipationaccordingto the formula:
P
dem
=0.5• L
load
• (I
load
)2• [(VCC+V
demag
)/V
demag
] • f
wheref = switching frequencyand
V
= demagnetizationvoltage.
demag
In this device if the GND pin is disconnected,with
V
not exceeding 16V, both channel will switch
CC
off.
LOW-SIDESWITCHES
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I
) flows into the Input pin in order to
iss
supplythe internal circuitry.
)
September 1998
1/11
Page 2
VN770P
BLOCK DIAGRAM
2/11
Page 3
CONNECTION DIAGRAM
VN770P
PIN FUNCTION
No NAME FUNCTI O N
1, 3, 2 5 , 28 DRAI N 3 Drain of Switch 3 ( low- s id e swit ch)
2 INPUT 3 Input o f Swit ch 3 (low-side switch)
4, 11 N.C. Not Connec t ed
5, 10, 19, 24 V
6 GND Ground of Swi t ch es 1 and 2 (h igh - si de swit ches )
7 IN PUT 1 Input of S witch 1 (high-side sw it ch)
8 DIAGNOSTIC Diagnostic of Switches 1 and 2 (high-side switches)
9 IN PUT 2 Input of S witch 2 (high-side sw it ch)
12, 14, 15, 1 8 DRAIN 4 Drain of Switc h 4 (low- s id e swit ch)
13 INPUT 4 Input o f Swit ch 4 (low-side switch)
16, 17 SOURCE 4 Source of Switch 4 (low-side switch)
20, 21 SOURCE 2 Source of Switch 2 (high-side switch)
22, 23 SOURCE 1 Source of Switch 1 (high-side switch)
26, 27 SOURCE 3 Source of Switch 3 (low-side switch)
CC
Drain of Switches 1a nd 2 ( h igh-side sw itches ) an d Power Supply Voltage
3/11
Page 4
VN770P
PROTECTION CIRCUITS
DUALHIGH SIDE SWITCH
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a a smallresistor between pin 2 (GND) and
ground. The suggestedresistance value is about
150Ω. In any case the maximumvoltage drop on
this resistor should not overcome 0.5V.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the
device ground (see application circuit in fig. 3),
which becomes the common signal GND for the
whole control board avoiding shift of V
.
V
stat
ih,Vil
and
LOW SIDE SWITCHES
The devices integrate:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 42V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperaturecutout occurs at
minimum 150
restarted when the chip temperature falls
below 135
o
C. The device is automatically
o
C.
- STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of these devices are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increase inR
DS(on)
).
TRUTH TABLE (for Dual high-sideswitch only)
INP U T 1 INP UT 2 SOURC E 1 SOURCE 2 D I AGNOST IC
Normal O peration L
H
L
H
Under - voltag e X X L L H
Ther mal S h utdow n
Channel 1
Channel 2
Open Load
Channel 1
Channel 2
Out put Shorted to V
CC
Channel 1
Channel 2
NOTE: The low-side switches have the fault feedback which canbe detected by monitoring the voltage at the input pins.
L = Logic LOW, H = Logic HIGH, X = Don’t care
HXLX L
XHXL L
H
L
X
L
H
L
X
L
L
H
H
L
X
L
H
L
X
L
H
L
L
H
L
H
H
L
X
L
H
H
X
L
L
H
H
L
X
L
H
L
X
L
H
H
H
H
H
H
L
L
L
L
L
L
L
L
4/11
Page 5
VN770P
ABSOLUTE MAXIMUM RATING (-40oC<Tj<150oC)
HIGHSIDE SWITCH
Symbol Parameter Value Unit
V
(BR)DSS
I
OUT
I
I
-V
I
STAT
V
ESD
P
T
T
LOW SIDE SWITCH
Symbo l Parameter Value Unit
V
(BR)DSS
V
I
I
V
ESD Elect r os t atic Dis char ge (C = 100 pF , R =1.5 K Ω )
P
T
T
Drain-S ou r ce Breakd own V oltage 40 V
Outp ut C ur r ent (con t.) 9 A
Revers e Out p ut C ur r ent -9 A
R
Input Current ±10 mA
IN
Revers e Supp ly Volta g e -4 V
CC
Status Curr ent ±10 m A
Elect r os t at ic Disch arge ( C = 100 pF, R = 1. 5 K Ω )
Power Dissip at ion at Tc=25oC Int ernally Limited W
tot
Junct ion Operating T em p er a t ure -40 to 150
j
Storage Temperature -55 to 150
stg
2000 V
Drain-Source Breakdown Volt age Internally Clamped V
Input Voltage 18 V
IN
Drain Curren t Int ernally Lim it ed A
D
Reverse DC Ou tput Cu rrent -14 A
R
2000 V
Tot al Dissip at ion at Tc=25oC In t ernally Lim ited W
tot
Oper ating Junction T em p er a t ure Int ernally Lim it ed
j
Sto rage T em pe r ature -55 to 1 50
stg
o
C
o
C
o
C
o
C
THERMAL DATA
R
thj-case
R
thj-case
R
thj-amb
Therm al Res is t a nce Junction- case (High-s ide sw it c h) M ax
Therm al Res is t a nce Junction- case (Low-si de sw it c h ) Ma x
Therm al Res is t a nce Junction- ambient Max
20
20
60
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH
(8 < V
< 16 V; -40 ≤ Tj≤ 125oC unlessotherwise specified)
CC
POWER
Symb o l Param et e r Test Cond iti ons Min. Typ . Ma x. Unit
V
In( *) Nominal Cur rent
R
I
V
DS(MAX)
Supply Voltage 6 13 26 V
CC
Tc=85oCV
On State Resistance I
on
Supply Current Off State Tj=25oCVCC= 13 V 35 100 µA
S
Maxim um Volt ag e Drop I
OUT=InVCC
=7.5A Tj=85oCVCC=13V1.44 2. 3 V
OUT
≤ 0.5 VCC=13V
DS(on)
=13V Tj=25oC 0.13 0.2 Ω
1.6 2.6 A
o
C/W
o
C/W
o
C/W
5/11
Page 6
VN770P
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued)
R
Outp ut to GND int e r nal
i
Tj=25oC51020KΩ
Imp edan c e
SWITCHING
Symb o l Param et e r Test Cond iti ons Min. Typ . Ma x. Unit
t
(^) Tur n-on Delay Time O f
d(on)
R
out
=5.4Ω
525200µs
Outp ut C ur r ent
(^) Rise Ti me Of O utp ut
t
r
=5.4Ω 10 50 180
R
out
Current
(^) Tur n-off Delay T ime Of
t
d(off)
=5.4Ω 10 75 250
R
out
Outp ut C ur r ent
(^) Fall Time O f O utput
t
f
=5.4Ω 10 35 180
R
out
Current
(di/dt)
(di/dt)
Turn-on Current Slope
on
Turn-off Current Sl ope
off
=5.4Ω
R
out
=5.4Ω 0.005 0.1 A/
R
out
0.003 0.1 A/µ s
LOGIC INPUT
Symb o l Param et e r Test Cond iti ons Min. Typ . Ma x. Unit
V
V
V
I(hyst.)
I
V
Input Low Level
IL
1.5 V
Voltage
Input High Lev el
IH
3.5 (•)V
Voltage
Input Hyster esis
0.2 0.9 1.5 V
Voltage
Input Current VIN=5V Tj=25oC30100µA
IN
Input Clamp Voltage IIN=10mA
ICL
=-10mA
I
IN
56
-0.7
7V
µs
µs
µs
µs
V
PROTECTIONAND DIAGNOSTICS
Symb o l Param et e r Test Cond iti ons Min. Typ . Ma x. Unit
T
6/11
V
STAT
V
USD
V
SCL
T
TSD
SD(hyst.)
T
V
Status Voltage O utput
I
=1.6mA 0.4 V
ST AT
Low
Under Volt age Shut
3.5 4.5 6 V
Down
Status Clam p Voltag e I
Thermal Shut-down
ST AT
I
ST AT
=10mA
=-10mA
56
-0.7
140 160 1 80
Tem perature
Thermal Shut-down
Hysteresis
Reset Tem per a tu r e 125
R
Open V o lt age Level Of f -Sta te (no t e 2 ) 2.5 4 5 V
OL
7V
50
V
o
C
o
C
o
C
Page 7
VN770P
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued)
PROTECTIONAND DIAGNOSTICS
Symb o l Param et e r Test Cond iti ons Min. Typ . Ma x. Unit
I
OL
t
povl
t
pol
(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
(^) See switching time waveform
() The V
exceed 10 mA at the input pin.
note 1: The Nominal Current is the current at T
note 2: I
note 3: t
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES
(T
case
OFF
Symb o l Param et e r Test Cond iti ons Min. Typ . Ma x. Unit
V
CLAM P
V
CLTH
V
INCL
I
DSS
I
ISS
Open Load Curren t
On-State 5 180 mA
Level
Status Dela y (note 3) 5 10 µs
Status Dela y (note 3) 50 500 2500 µs
is internally clampedat6V about. It is possible to connect this pin to anhigher voltage via an external resistor calculated to not
IH
=85oC forbattery voltage of 13V whichproduces a voltage drop of 0.5 V
=(VCC-VOL)/R
OL(off)
: ISO definition
povltpol
OL
c
=25oC unless otherwisespecified)
Drain-source C lamp
Voltage
Drain-source C lamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Volta ge
Drain Curren t (V
in
Supply Current from
Input Pin
ID=7A Vin= 0 36 4 2 48 V
ID=2mA Vin=0 35 V
Iin=-1mA -1 -0.3 V
V
=13V Vin=0
=0)
DS
=25V Vin=0
V
DS
VDS=0V Vin= 1 0 V 250 500 µA
50
200
µA
µA
ON (∗)
Symb o l Param et e r Test Cond iti ons Min. Typ . Ma x. Unit
V
IN(th)
Input Thres ho ld
VDS=VinID+Iin=1mA 0.8 3 V
Voltage
R
DS(on)
Static D rain-source On
Resist ance
Vin=10V ID=7A
=5V ID=7A
V
in
0.07
0.1
DYNAMIC
Symb o l Param et e r Test Cond iti ons Min. Typ . Ma x. Unit
Ω
Ω
7/11
Page 8
VN770P
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued)
gfs(∗)Forward
VDS=13V ID=7A 8 10 S
Transconductance
C
Outp ut C ap acitance VDS=13V f=1MHz Vin= 0 400 500 pF
oss
SWITCHING (**)
Symb o l Param et e r Test Cond iti ons Min. Typ . Ma x. Unit
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
(di/dt)
Q
Turn-on Delay Ti me
Rise T i m e
Turn-off Delay Tim e
VDD=15V Id=7A
=10V R
V
gen
gen
=10Ω
(see f ig ur e 3)
Fall Time
Turn-on Delay Ti me
Rise T i m e
Turn-off Delay Tim e
VDD=15V Id=7A
=10V R
V
gen
=1000Ω
gen
(see f ig ur e 3)
Fall Time
Turn-on Current Slope VDD=15V ID=7A
on
=10V R
V
in
Tot al In put Charge VDD=12V ID=7A Vin= 10 V 30 nC
i
gen
=10Ω
60
160
250
100
300
1.5
5.5
1.8
120 A/µ s
120
300
400
200
500
2.2
7.5
2.5
SOURCEDRAINDIODE
Symb o l Param et e r Test Cond iti ons Min. Typ . Ma x. Unit
V
(∗)ForwardOnVoltage ISD=10A Vin=0 1.6 V
SD
110
0.34
6.1
Q
I
RRM
t
(∗∗)
rr
rr
Revers e Recovery
Time
Revers e Recovery
(∗∗)
=7A di/dt=100A/µs
I
SD
=30V Tj=25oC
V
DD
(see t est circui t , figure 5)
Charge
(∗∗)
Revers e Recovery
Current
ns
ns
ns
ns
ns
µs
µs
µs
ns
µC
A
PROTECTION
Symb o l Param et e r Test Cond iti ons Min. Typ . Ma x. Unit
T
(∗∗) Ov ert emperat ure
jsh
Shutdown
(∗∗) Overt emperat ure R eset 135
T
jrs
I
(∗∗) Fault Sink Cu rr e nt Vin=10V VDS=13V
gf
t
dlim
I
lim
Drain Curren t L im it Vin=10V VDS=13V
(∗∗) Step Response
Current Limit
=5V VDS=13V
V
in
=5V VDS=13V
V
in
Vin=10V
=5V
V
in
8/11
150
10
10
50
20
14
14
30
80
20
20
60
150
o
C
o
C
mA
mA
A
A
µs
µs
Page 9
TYPICALAPPLICATION DIAGRAM
VN770P
9/11
Page 10
VN770P
SO-28 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.65 0.104
a1 0.10 0.30 0.004 0.012
b 0.35 0.49 0.013 0.019
b1 0.23 0.32 0.009 0.012
C 0.50 0.020
c1 45 (typ.)
D 17.7 18.1 0.697 0.713
E 10.00 10.65 0.393 0.419
e 1.27 0.050
e3 16.51 0.650
F 7.40 7.60 0.291 0.299
L 0.40 1.27 0.016 0.050
S 8 (max.)
mm inch
10/11
0016572
Page 11
VN770P
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval ofSTMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics – Printed inItaly –All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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.
11/11
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