Page 1
VN770
QUAD SMART POWER SOLID STATE RELAY
FOR COMPLETE H-BRIDGE CONFIGURATIONS
TYPE R
VN77 0 0.240 Ω 9A 26V
* Total resistance of one side in bridge configuration
■ IDEAL AS A LOW VOLTAGEBRIDGE
■ VERYLOW STAND-BYPOWER
*I
DS(on)
OUT
V
CC
DISSIPATION
■ OVER-CURRENTPROTECTED
■ STATUSFLAG DIAGNOSTICSON UPPER
SIDE
■ OPENDRAIN DIAGNOSTICS OUTPUT
■ UNDER-VOLTAGEPROTECTION
■ SUITABLEAS QUADSWITCH
DESCRIPTION
The VN770 is a device formed by three
monolithic chips housed in a standard SO-28
package: a double high side and two Power
MOSFETs. The doublehigh side are made using
STMicroelectronics VIPower technology; Power
MOSFETs are made by using the new advanced
strip lay-out technology.This device is suitable to
drive a DC motor in a bridge configurationas well
as to be used as a quad switch for any low
voltage application. The dual high side switches
have built-in thermal shut-down to protect the
chip from over temperature and short circuit,
status output to provide indication for open load
in off and on state, overtemperature conditions
and stuck-onto V
CC
.
DUALHIGH-SIDESWITCH
From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (
) respectively.
tpol
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
SO-28
MOS off at a minimum junction temperature of
o
C. When this temperature returns to 125oC
140
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
locatedinside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (V
demag
of -18V. This function allows to greatly reduces
the power dissipationaccordingto the formula:
P
dem
=0.5• L
load
• (I
load
)2• [(VCC+V
demag
)/V
demag
] • f
wheref = switching frequencyand
V
= demagnetizationvoltage.
demag
In this device if the GNDpin is disconnected,with
V
not exceeding 16V, both channel will switch
CC
off.
PowerMOSFETs
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The devices can be used as a
switchfrom DC to veryhigh frequency.
)
October 1998
1/10
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VN770
BLOCK DIAGRAM
2/10
Page 3
CONNECTION DIAGRAM
VN770
PIN FUNCTION
No NAME FUNCTI O N
1, 3, 25, 28 DRAI N 3 Drain of Switc h 3 (low-side switch)
2 INPUT 3 Input o f Switch 3 (l ow-side s witch )
4, 11 N.C. Not Con nected
5, 10, 19, 24 V
6 GND Ground of S wi t ches 1 and 2 (high -s i de swit ches )
7 IN PUT 1 Input of S witch 1 ( h igh-side sw it ch)
8 DIAGNOSTIC Diagnostic of Switches 1 and 2 (high-side switches)
9 IN PUT 2 Input of S witch 2 ( h igh-side sw it ch)
12, 14, 15, 18 DRAIN 4 Drain of Switc h 4 (low-side switch)
13 INPUT 4 Input o f Switch 4 (l ow-side s witch )
16, 17 SOURCE 4 Source of Switch 4 ( low-side switch)
20, 21 SOURCE 2 Source of Switch 2 ( high-side swit ch)
22, 23 SOURCE 1 Source of Switch 1 ( high-side swit ch)
26, 27 SOURCE 3 Source of Switch 3 ( low-side switch)
CC
Drain of Switc hes 1a nd 2 (high- s ide sw itches) and Power S uppl y Voltage
3/10
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VN770
PROTECTION CIRCUITS
DUALHIGH SIDE SWITCH
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a a small resistor between pin 2 (GND) and
ground. The suggested resistance value is about
150Ω. In any case the maximum voltage drop on
this resistor should not overcome 0.5V.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the
device ground (see application circuit in fig. 3),
which becomes the common signal GND for the
whole control board avoiding shift of V
V
.
stat
TRUTH TABLE (for Dual high-sideswitch only)
INP U T 1 INP UT 2 SO URC E 1 SOURCE 2 D IAGNOST IC
Normal O p er ation L
H
L
H
Under - voltag e X X L L H
Ther mal Shut down
Channel 1
Channel 2
Open L oad
Channel 1
Channel 2
Out put Sh ort ed to V
CC Channel 1
Channel 2
NOTE: The low-side switches have the fault feedback which canbe detected by monitoring the voltage at the input pins.
L = Logic LOW, H= Logic HIGH, X = Don’t care
HXLX L
XHXL L
H
L
X
L
H
L
X
L
L
H
H
L
X
L
H
L
X
L
H
L
L
H
L
H
H
L
X
L
H
H
X
L
L
H
H
L
X
L
H
L
X
L
H
H
ih,Vil
H
H
H
H
L
L
L
L
L
L
L
L
and
ABSOLUTEMAXIMUM RATING (-40oC<Tj< 150oC)
HIGH SIDESWITCH
Symbol Para met e r Val u e Uni t
V
4/10
(BR)DSS
I
OUT
I
I
-V
I
STAT
V
ESD
P
T
T
Drain-Sou rc e B rek d own Volt a ge 40 V
Out put Curr ent (cont i nuous) 9 A
Reverse O utp ut Current -9 A
R
Input Curren t ±10 m A
IN
Reverse Suppl y Current -4 V
CC
Status Current ±10 mA
Electrostatic Discharge (C = 100 pF, R = 1.5 KΩ)
Power Dissipation @ Tc=25oC Int er na lly Limit e d W
tot
Junction Op er ating Temper a tu re -40 to 150
j
St orage T e m per at ure -55 to 150
stg
2000 V
o
C
o
C
Page 5
VN770
LOW SIDE SWITCH
Symbol Parameter Value Unit
V
V
DGR
V
I
I
I
DM(*)
dv/ d t (1) Pea k Diode Recove ry Volt age Slope 7 V/ ns
T
T
THERMAL DATA
R
thj-case
R
thj-case
R
thj-amb
Drain-S ou r ce Vol t ag e (VGS=0) 60 V
DS
Drain-G ate Voltage (RGS=20KΩ)
Gate-Source Volta ge ±20 V
GS
Drain Curren t (cont inuous ) @ TC=25oC36A
D
Drain Curren t (cont inuous ) @ TC=100oC24A
D
60 V
Drain Curren t (p ulsed) 144 A
Storage Temperature -55 to 150
stg
Junct ion Operating T empera t ure -40 t o 1 50
j
Therm al Resistanc e Jun ct i on-case (High-s ide sw it c h) Max
Therm al Resistanc e Jun ct i on-case (Low-si de sw it c h ) Ma x
Therm al Resistanc e Jun ct i on-ambi ent Max
20
20
60
o
o
o
C/W
o
C/W
o
C/W
C
C
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH
(8 < V
< 16 V; -40 ≤ Tj≤ 125oC unlessotherwise specified)
CC
POWER
Symb o l Param et e r Test Co n d iti ons Min. Typ . Ma x. Uni t
V
In( *) Nominal Cur rent
R
I
V
DS(MAX)
R
Supply Voltage 6 13 26 V
CC
T
=85oCV
c
On State Resistance I
on
Supply Current Off State Tj=25oCVCC= 13 V 35 100 µA
S
Maxim um Volt ag e D r op I
Outp ut t o G ND inte r nal
i
OUT=InVCC
=7.5A Tj=85oCVCC=13V1.44 2.3 V
OUT
Tj=25oC51020KΩ
≤ 0.5 VCC=13V
DS(on)
=13V Tj=25oC 0.13 0.2 Ω
1.6 2.6 A
Imp edan c e
SWITCHING
Symb o l Param et e r Test Co n d iti ons Min. Typ . Ma x. Uni t
t
(^) Turn-o n Delay Tim e Of
d(on)
Outp ut C urrent
(^) Rise Time Of O utp ut
t
r
Current
(^) Turn-o f f Delay T ime Of
t
d(off)
Outp ut C urrent
(^) Fall Time O f Output
t
f
Current
(di/dt)
(di/dt)
Turn-on Current Slope
on
Turn-off Current Slope
off
=5.4Ω
R
out
=5.4Ω 10 50 180
R
out
=5.4Ω 10 75 250
R
out
=5.4Ω 10 35 180
R
out
=5.4Ω
R
out
=5.4Ω 0.005 0.1 A/
R
out
525200µs
0.003 0.1 A/µs
µs
µs
µs
µs
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Page 6
VN770
ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued)
LOGIC INPUT
Symb o l Param et e r Test Co n d iti ons Min. Typ . Ma x. Uni t
V
V
V
I(hyst.)
I
V
PROTECTION AND DIAGNOSTICS
Symb o l Param et e r Test Co n d iti ons Min. Typ . Ma x. Uni t
V
STAT
V
USD
V
SCL
T
TSD
T
SD(hyst.)
T
V
I
t
povl
t
(*) In= Nominal current according to ISO definition for high side automotive switch (see note 1)
(^) See switching time waveform
() The V
exceed 10 mA at the input pin.
note 1: The Nominal Current is the current at T
note 2: I
note 3: t
Input Low Level
IL
1.5 V
Voltage
Input High Level
IH
3.5 (•)V
Voltage
Input Hyster esis
0.2 0.9 1.5 V
Voltage
Input Current VIN=5V Tj=25oC30100µA
IN
Input Clamp Voltage IIN=10mA
ICL
Status Volt age Output
56
=-10mA
I
IN
I
=1.6mA 0.4 V
ST AT
-0.7
7V
Low
Under V ol t age Shut
3.5 4.5 6 V
Down
Status Clam p V olt ag e I
Thermal Shut-down
ST AT
I
ST AT
=10mA
=-10mA
56
-0.7
140 160 180
7V
Tem perature
Thermal Shut-down
50
Hysteresis
Reset T e mpera tu r e 125
R
Open Voltage Level Off -State (no t e 2 ) 2.5 4 5 V
OL
Open Loa d Current
OL
On-State 5 180 mA
Level
Status Delay (note 3) 5 10 µs
Status Delay (note 3) 50 500 250 0 µ s
pol
is internally clampedat6V about. Itis possible to connect this pin to an higher voltage via an external resistor calculated to not
IH
=85oC forbattery voltage of 13V which produces a voltage drop of 0.5 V
=(VCC-VOL)/R
OL(off)
: ISO definition
povltpol
OL
c
V
V
o
C
o
C
o
C
6/10
Page 7
VN770
ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (T
=25oC unless otherwise
case
specified)
OFF
Symb o l Param et e r Test Co n d iti ons Min. Typ . Ma x. Uni t
V
(BRDSS)
Drain-source
=250µA VGS=0
I
D
60 V
Brekdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Curren t (V
GS
Gate-Body Leakage
Current (V
DS
=0)
=0)
V
= Max Rat ing
DS
= Max Rat ing , TC=125oC
V
DS
= ± 20 V
V
GS
1
10
± 100 nA
ON (∗)
Symb o l Param et e r Test Co n d iti ons Min. Typ . Ma x. Uni t
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
1.0 2.5 V
Voltage
R
DS(on)
Static Drain- S ou rc e
VGS=10V ID=18A 0.032 0.04 Ω
On Resistance
I
D(on)
On State Drain
Current (V
DS
=0)
V
DS>ID(on)xRDS(on) ma x
VGS=10V
36 A
DYNAMIC
µA
µA
Symb o l Param et e r Test Co n d iti ons Min. Typ . Ma x. Uni t
g
(∗)Forward
fs
VDS>I
D(on)xRDS(on) ma xID
= 18A 7 S
Transconductance
C
C
C
Input Capac it ance
iss
Outp ut C ap acitance
oss
Revers e Transfer
rss
VDS=25V f=1MHz VGS= 0 2115
260
65
2800
350
90
Capacit an c e
SWITCHING-ON (**)
Symb o l Param et e r Test Co n d iti ons Min. Typ . Ma x. Uni t
t
d(on)
t
r
(di/dt)
Q
Q
gs
Q
gd
Turn-on Time
Rise Time
Turn-on Current Slope VDD=48V ID=36A
on
Total Gate Charge
g
Gate-Source Charge
VDD=30V ID=18A
=4.7Ω VGS=10V
R
G
=47Ω VGS=10V
R
G
VDD=48V ID=36A
=10V
V
GS
Gate-Drain C harge
28
85
250 A / µ s
50
13
18
40
115
70 nC
SWITCHING-OFF
Symb o l Param et e r Test Co n d iti ons Min. Typ . Ma x. Uni t
t
r(Voff)
t
t
Off -Voltage Rise T ime
Fall Time
r
Cross -O ver Ti m e
c
VDD=48V ID=36A
=4.7Ω VGS=10V
R
G
12
25
40
16
35
55
pF
pF
pF
ns
ns
nC
nC
ns
ns
ns
7/10
Page 8
VN770
SOURCE-DRAINDIODE
Symb o l Param et e r Test Co n d iti ons Min. Typ . Ma x. Uni t
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Pulse widthlimited bySafeOperating Area.
TYPICALAPPLICATION DIAGRAM
Source-Drain C urrent
(∗∗)
Source-Drain C urrent
36
144
(pulsed)
(∗)ForwardOnVoltage ISD=36A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
=36A, di/dt=100A/µs
I
SD
V
=30V Tj=150oC
r
75
245
Charge
Reverse Recovery
6.5
Current
A
A
ns
nC
A
8/10
Page 9
SO-28 MECHANICAL DATA
VN770
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.65 0.104
a1 0.10 0.30 0.004 0.012
b 0.35 0.49 0.013 0.019
b1 0.23 0.32 0.009 0.012
C 0.50 0.020
c1 45 (typ.)
D 17.7 18.1 0.697 0.713
E 10.00 10.65 0.393 0.419
e 1.27 0.050
e3 16.51 0.650
F 7.40 7.60 0.291 0.299
L 0.40 1.27 0.016 0.050
S 8 (max.)
mm inch
0016572
9/10
Page 10
VN770
Information furnished is believed to beaccurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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