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VN30N
HIGH SIDE SMART POWER SOLID STATE RELAY
PRELIMINARY DATA
TYPE V
VN30N 60 V 0.03 Ω 45 A 26 V
■ OUTPUT CURRENT (CONTINUOUS): 45A @
DSS
R
DS(on)
I
OUT
V
CC
Tc=25oC
■ 5V LOGIC LEVEL COMPATIBLE INPUT
■ THERMAL SHUT-DOWN
■ UNDER VOLTAGE SHUT-DOWN
■ OPEN DRAIN DIAGNOSTIC OUTPUT
■ VERY LOW STAND-BYPOWER
DISSIPATION
DESCRIPTION
The VN30N is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
BLOCK DIAGRAM
PENTAWATT
(vertical)
PENTAWATT
(horizontal)
PENTAWATT
(in-line)
ORDER CODES:
PENTAWATT vertical VN30N
PENTAWATT horizontal VN30N (011Y)
PENTAWATT in-line VN30N (012Y)
September 1994
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VN30N
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Uni t
V
(BR)DSS
I
OUT
I
I
-V
I
STAT
V
ESD
P
T
T
CONNECTION DIAGRAM
Drain - So urc e Br e ak down Voltage 60 V
Out put Curr ent (co nt . ) 45 A
Reverse Output Cu r r ent -45 A
R
Input Curre nt ±10 mA
IN
Reverse Supply Volt age -4 V
CC
St at us Current ±10 mA
Electrost atic Discharge (1. 5 kΩ , 100 pF ) 2000 V
Powe r Dissipatio n at Tc≤ 25oC108W
tot
Junction Op er at ing Temperat ur e -40 to 150
j
St or a ge Te mperat ur e -55 to 150
stg
o
C
o
C
CURRENT AND VOLTAGE CONVENTIONS
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VN30N
THERMAL DATA
R
thj-case
R
thj-amb
ELECTRICAL CHARACTERISTICS (VCC= 13 V; -40 ≤ Tj≤ 125oC unless otherwise specified)
POWER
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
R
I
SWITCHING
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
d(off)
(di/dt)
(di/dt)
Thermal Resistance Junction-c as e Max
Thermal Resist anc e Junc t ion-ambient Max
Supply Volta ge 7 26 V
CC
On State Resistance I
on
Supply Curr ent Of f S ta te Tj≥ 25oC
S
=18A
OUT
I
=18A Tj=25oC
OUT
1.15
60
On St ate
Turn-on D elay Time Of
Out put Curr ent
Rise Time Of Output
t
r
Current
Tur n - of f Delay Time Of
Out put Curr ent
t
Fall Time Of Output
f
Current
Turn-on C urrent S lope I
on
Turn-off Current Slope I
off
I
= 18 A Resistive Load
OUT
Input Rise Time < 0.1µsT
I
= 18 A Resistive Load
OUT
=25oC
j
Input Rise Time < 0.1µsTj=25oC
I
= 18 A Resistive Load
OUT
Input Rise Time < 0.1µsTj=25oC
I
= 18 A Resistive Load
OUT
Input Rise Time < 0.1µsTj=25oC
=18A
OUT
I
OUT=IOV
=18A
OUT
I
OUT=IOV
30 µs
100 µs
80 µs
40 µs
0.06
0.03
50
15
0.53A/µs
3
4
o
C/W
o
C/W
Ω
Ω
µA
mA
A/µs
A/µs
A/µs
LOGIC INPUT
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
Input LowLevel
IL
0.8 V
Volt age
V
Input High Level
IH
2(*)V
Volt age
V
I(hyst.)
Input Hys teresis
0.5 V
Volt age
I
V
Input Curre nt VIN= 5 V 250 500 µ A
IN
Input Clamp Voltage IIN=10mA
ICL
IIN=-10mA
6
-0.7
PROTECTIONS AND DIAGNOSTICS
Symbol Parameter Test Condition s Min. Typ. Max. Unit
(•) Status V oltage Outp ut
V
STAT
Low
V
USD
Under Voltage Shut
Down
I
=1.6mA 0.4 V
STAT
6.5 7 V
V
V
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VN30N
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
(•) Status Clam p Voltag e I
V
SCL
t
SC
I
OV
I
AV
I
OL
T
TSD
T
(*) The VIHis inter nally clamped at 6V about . I t is possible to connect this pin to an higher vol tage via an ex ter nal resistor
cal culated to not exceed 10 mA at the i nput pin.
(•) St atus determinat ion > 100 µs after t he switching edge.
Switc h-off T ime in
Short C ircu it Condition
at Start-Up
Ove r Current R
Aver age Current in
Short C ircuit
Open Load Cu rr ent
Level
Thermal Shu t-down
Tem perature
Reset T empera t ur e 125
R
=10mA
STAT
I
=-10mA
STAT
R
<10mΩ Tc=25oC1ms
LOAD
<10mΩ -40 ≤ Tc≤ 125oC 140 A
LOAD
R
<10mΩ Tc=85oC2.5A
LOAD
5 1250 mA
140
6
-0.7
V
V
o
C
o
C
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140oC. When the
temperature returns to about 125oC the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING THE DEVICE AGAINST REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
– If the input is pulled to power GND, a negative
voltage of -VFis seen by the device. (VIL,V
thresholds and V
are increased by VFwith
STAT
respect to power GND).
IH
– The undervoltage shutdown level is increased
by VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH,VILand V
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
STAT
takes
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TRUTH TABLE
INPUT OUTPUT DIAG NO ST IC
Normal O per at ion L
H
Open C ircuit (No Load) H H L
Ove r -temperature H L L
Under-v oltage X L H
L
H
Figure 1: Waveforms
VN30N
H
H
Figure 2: Over Current Test Circuit
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VN30N
Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 4: Typical Application Circuit With Separate Signal Ground
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Pentawatt (vertical) MECHANICAL DATA
VN30N
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 17.85 0.703
L1 15.75 0.620
L2 21.4 0.843
L3 22.5 0.886
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
M 4.5 0.177
M1 4 0.157
Dia 3.65 3.85 0.144 0.152
A
H3
L
L1
C
D1
Dia.
L7
L6
L2
L3L5
D
F1
H2
E
MM1
G1
G
F
P010E
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VN30N
Pentawatt (horizontal) MECHANICAL DATA
DIM.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 14.2 15 0.559 0.590
L1 5.7 6.2 0244
L2 14.6 15.2 0.598
L3 3.5 4.1 0.137 0.161
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
Dia 3.65 3.85 0.144 0.152
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
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P010F
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Pentawatt (In- Line) MECHANICAL DATA
VN30N
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041
F1 1 1.4 0.039 0.055
G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L2 23.05 23.4 23.8 0.907 0.921 0.937
L3 25.3 25.65 26.1 0.996 1.010 1.028
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
Dia 3.65 3.85 0.144 0.152
mm inch
P010D
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VN30N
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is grantedby implication or otherwise under anypatent orpatent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsarenot authorizedforuse as criticalcomponents inlife supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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