Page 1
Ordering Information
VN2450
N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
/R
DSS
BV
DGS
500V 13Ω 0.5A VN2450N3 VN2450N8 VN2450NW
* Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.
** Die in wafer form.
DS(ON)
(max) (min) TO-92 TO-243AA* Die**
I
D(ON)
Features
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Low C
❏ High input impedance and high gain
and fast switching speeds
ISS
Order Number / Package
Product marking for TO-243AA:
VN4E❋
Where ❋ = 2-week alpha date code
Advanced DMOS Technology
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
Note: See Package Outline section for dimensions.
1
G
D
S
TO-243AA
(SOT-89)
D
S G D
TO-92
Page 2
Thermal Characteristics
Package I
(continuous)* ID (pulsed) Power Dissipation
D
@ TC = 25°C °C/W °C/W
TO-243AA 0.25A 0.75A 1.6W
†
TO-92 0.2A 0.65A 1W 125 170 0.2A 0.65A
ID (continuous) is limited by max rated Tj.
*
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
θ
jc
θ
15 78
ja
†
IDR*I
0.25A 0.75A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
Drain-to-Source
Breakdown Voltage
500
VVGS = 0V, ID = 2.0mA
VN2450
DRM
V
∆V
I
GSS
I
DSS
GS(th)
GS(th)
Gate Threshold Voltage 1.5 V V
Change in V
with Temperature -5.5 mV/°CV
GS(th)
Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current 10 µAVGS = 0V, VDS = Max Rating
1mAV
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
ON-State Drain Current 0.5 A V
Static Drain-to-Source
ON-State Resistance
Change in R
with Temperature
DS(ON)
Forward Transconductance
50 m
20 V
13 V
1.7
Input Capacitance 150
Common Source Output Capacitance 50 pF
Reverse Transfer Capacitance 25
Turn-ON Delay Time 10
Rise Time 10
Turn-OFF Delay Time 25
Fall Time 20
Diode Forward Voltage Drop 1.5 V VGS = 0V, ISD = 400mA
= V
GS
GS
GS
, ID = 1.0mA
DS
= V
, ID = 1.0mA
DS
= 0V, VDS = 0.8 Max Rating
TA = 125°C
= 10V, VDS = 25V
GS
= 4.5V, ID = 100mA
Ω
GS
= 10V, ID = 400mA
GS
%/°CVGS = 10V, ID = 400mA
Ω
VDS = 25V, ID = 200mA
VGS = 0V, VDS = 25V
f = 1.0 MHz
VDD = 25V,
ns
ID = 250mA,
= 25Ω
R
GEN
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
0V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
VN2450
1.2
1.0
0.8
0.6
(Amperes)
D
I
0.4
0.2
0
01020304050
0.5
0.4
Output Characteristics
V
(Volts)
DS
Tr ansconductance vs. Drain Current
V
= 25V
DS
TA = -55°C
VGS = 10V
8V
6V
5V
4V
3V
Saturation Characteristics
1.0
0.8
0.6
VGS = 10V
(Amperes)
D
I
0.4
0.2
0
0246810
V
(Volts)
DS
Power Dissipation vs. Case Temperature
2.0
1.6
SOT-89
8V
6V
5V
4V
3V
0.3
(siemens)
FS
0.2
G
0.1
0
0 0.2 0.4 0.6 0.8 1.0
1.0
0.1
(amperes)
D
I
0.01
TA = 25°C
TA = 125°C
ID (Amperes)
Maximum Rated Safe Operating Area
SOT-89 (pulsed)
TO-92 (pulsed)
TO-92
SOT-89
1.2
(Watts)
D
P
0.8
TO-92
0.4
0
05075100 125 150
25
TC (°C)
Thermal Response Characteristics
1.0
0.8
0.6
0.4
SOT-89
= 1.6W
P
D
TC = 25°C
TC = 25°C
0.001
1 100010010
V
DS
(Volts)
0.2
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1.0
TO-92
= 1W
P
D
TC = 25°C
tp (seconds)
3
Page 4
Typical Performance Curves
VN2450
BV
Variation with Temperature
DSS
1.2
1.1
(Normalized)
1.0
DSS
BV
0.9
0.8
-50 0 50 100
TJ (°C)
Tr ansfer Characteristics
1.2
V
= 25V
DS
1.0
0.8
0.6
(Amperes)
D
I
0.4
0.2
TA = 25°C
TA = -55°C
TA = 125°C
150
On Resistance vs. Drain Current
30
25
20
VGS = 4.5V
(ohms)
15
DS(ON)
R
10
5
0
0 0.3 0.6 0.9 1.2 1.5
ID (Amperes)
1.5
1.35
1.2
(normalized)
1.05
GS(th)
0.9
V
0.75
V
GS(TH)
V
GS(th)
and R
@ 1mA
DS(ON)
R
w/ Temperature
DS(on)
VGS = 10V
@ 10V, 0.4A
3.0
2.5
2.0
1.5
1.0
0.5
(normalized)
DS(ON)
R
0.0
0123456
V
(Volts)
GS
Capacitance vs. Drain Source Voltage
300
f = 1MHz
225
(picofarads)
150
C
ISS
C
75
C
OSS
C
RSS
0
010203040
V
(volts)
DS
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
0.6
-50 -25 0 25 50 75 100 125 150
0.0
TJ (°C)
Gate Drive Dynamic Characteristics
10
ID = 0.5A
8
6
VDS=10V
VDS=40V
(volts)
GS
4
V
2
0
0 1.0 2.0 3.0 4.0
Q (nanocoulombs)
G
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
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