Datasheet VN2224LL Datasheet (Supertex)

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11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher­ent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
VN2222LL
BV
DSS
/R
DS(ON)
I
D(ON)
BV
DGS
(max) (min) TO-92
60V 7.5Ω 0.75A VN2222LL
Ordering Information
Order Number / Package
N-Channel Enhancement-Mode Vertical DMOS FETs
Package Option
Note: See Package Outline section for dimensions.
TO-92
Features
❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low C
ISS
and fast switching speeds
❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices
Applications
❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage BV
DSS
Drain-to-Gate Voltage BV
DGS
Gate-to-Source Voltage ± 30V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C * Distance of 1.6 mm from case for 10 seconds.
S G D
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1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Thermal Characteristics
VN2222LL
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
Drain-to-Source Breakdown Voltage 60 V VGS = 0V, ID= 100µA
V
GS(th)
Gate Threshold Voltage 0.6 2.5 V VGS = VDS, ID = 1mA
I
GSS
Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V
I
DSS
Zero Gate Voltage Drain Current 10 VGS = 0V, VDS = Max Rating
500 µAV
GS
= 0V, VDS = 48V
T
A
= 125°C
I
D(ON)
ON-State Drain Current 0.75 A VGS = 10V, VDS = 10V
R
DS(ON)
Static Drain-to-Source ON-State Resistance 7.5 Ω VGS = 5V, ID = 0.2A
7.5 Ω V
GS
= 10V, ID = 0.5A
G
FS
Forward Transconductance 100 m V
DS
= 10V, ID = 0.5A
C
ISS
Input Capacitance 60
C
OSS
Common Source Output Capacitance 25 pF
C
RSS
Reverse Transfer Capacitance 8
t
(ON)
Turn-ON Time 10
t
(OFF)
Turn-OFF Time 10
V
SD
Diode Forward Voltage Drop 0.85 V VGS = 0V, ISD = 0.2A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VGS = 0V, VDS = 25V f = 1 MHz
ns
VDD = 15V, ID = 0.6A R
GEN
= 25Ω
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Ω
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja
IDR*I
DRM
@ TC = 25°C °C/W °C/W
TO-92 0.23A 1.0A 1W 125 170 0.23A 1.0A
* I
D
(continuous) is limited by max rated Tj.
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