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11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN2222
VN2224
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FET s are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage BV
DSS
Drain-to-Gate Voltage BV
DGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
ISS
and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Note: See Package Outline section for dimensions.
1
10
2
3
4
5
6
7
8
9
20
11
19
18
17
16
15
14
13
12
top view
TO-92
S G D
20-pin Ceramic DIP
Ordering Information
Order Number / Package
BV
DSS
/R
DS(ON)
I
D(ON)
BV
DGS
(max) (min) TO-92 20-Pin C-Dip
220V 1.25Ω 5.0A — VN2222NC
240V 1.25Ω 5.0A VN2224N3 —
S
S
S
G1
G2
G3
G4
S
S
S
S
S
NC
D1
D2
D3
D4
NC
S
S
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Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
VV
GS
= 0V, ID = 5mA
V
GS(th)
Gate Threshold Voltage 1.0 3.0 V VGS = VDS, ID = 5mA
∆V
GS(th)
Change in V
GS(th)
with Temperature -4 -5 mV/°CVGS = VDS, ID = 5mA
I
GSS
Gate Body Leakage 1 100 nA VGS = ±20V, VDS = 0V
I
DSS
Zero Gate Voltage Drain Current 50 µAV
GS
= 0V, VDS = Max Rating
5mA VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
I
D(ON)
ON-State Drain Current 2 VGS = 5V, VDS = 25V
510 V
GS
= 10V, VDS = 25V
R
DS(ON)
1.0 1.5 VGS = 5V, ID = 2A
0.9 1.25 VGS = 10V, ID = 2A
∆R
DS(ON)
Change in R
DS(ON)
with Temperature 1.0 1.4 %/°CVGS = 10V, ID = 2A
G
FS
Forward Transconductance 1.0 2.2 VDS = 25V, ID = 2A
C
ISS
Input Capacitance 300 350
C
OSS
Common Source Output Capacitance 85 150 pF
C
RSS
Reverse Transfer Capacitance 20 35
t
d(ON)
Turn-ON Delay Time 6 15
t
r
Rise Time 16 25
t
d(OFF)
Turn-OFF Delay Time 65 90
t
f
Fall Time 30 60
V
SD
Diode Forward Voltage Drop 0.8 1.0 V VGS = 0V, ISD = 100mA
t
rr
Reverse Recovery Time 500 ns VGS = 0V, ISD = 1A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja
IDR*I
DRM
@ TC = 25°C °C/W °C/W
TO-92 540mA 5.0A 1.0W 125 170 540mA 5.0A
* I
D
(continuous) is limited by max rated Tj.
Thermal Characteristics
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Electrical Characteristics
(@ 25°C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
A
VN2222/VN2224
Ω
Static Drain-to-Source
ON-State Resistance
Ω
VDD = 25V
ID = 2A
R
GEN
= 10Ω
V
GS
= 0V, VDS = 25V
f = 1 MHz
ns
VN2224 240
VN2222 220
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Typical Performance Curves
VN2222/VN2224
Output Characteristics
10
8
6
4
2
0
VDS (volts)
I
D
(amperes)
I
D
(amperes)
Saturation Characteristics
10
8
6
4
2
0
VDS (volts)
Maximum Rated Safe Operating Area
1 100010010
10
1
0.1
0.01
0.001
VDS (volts)
I
D
(amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001 100.01 0.1 1
tp (seconds)
Transconductance vs. Drain Current
5
4
3
2
1
0
0105
G
FS
(siemens)
ID (amperes)
Power Dissipation vs. Case Temperature
0 15010050
10
5
0
1257525
TC (°C)
P
D
(watts)
TO-92
T
C
= 25°C
PD = 1W
TO-92
TA = -55°C
VDS = 25V
0102030 5040
4V
3V
0246 108
VGS = 10V
6V
4V
3V
TA = 25°C
TA = 125°C
VGS = 10V
6V
8V
8V
TO-92 (DC)
TC = 25°C
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1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
VN2222/VN2224
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts)
Tj (°C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
(th)
and RDS Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
BV
DSS
(normalized)
Tj (°C)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
Capacitance vs. Drain-to-Source Voltage
400
C (picofarads)
VDS (volts)
I
D
(amperes)
BV
DSS
Variation with Temperature
010203040
300
200
0
0246810
10
5
-50 0 50 100 150
1.1
1.0
5
2
1.4
1.0
0.4
10
8
6
4
2
024
6
810
-50 0 50 100 150
300 pF
VDS = 40V
VDS = 10V
VGS= 5V
VGS= 10V
T
A
= -55
°C
VDS = 25V
125
°C
0246 108
0
3
4
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
733 pF
0.6
0.8
1.2
2.4
2.0
1.6
1.2
0.8
0.4
V
th
@ 5mA
25
°C
0
100
0
1
RDS @ 10V, 2A
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