Page 1
Ordering Information
VN2210
N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
/R
DSS
BV
DGS
100V 0.35Ω 8A VN2210N2 VN2210N3
†
MIL visual screening available
DS(ON)
(max) (min) TO-39 TO-92
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
and fast switching speeds
ISS
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
I
D(ON)
Order Number / Package
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermallyinduced secondary breakdown.
Supertex’s vertical DMOS FET s are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
07/08/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
D G S
TO-39
Case: DRAIN
Note: See Package Outline section for dimensions.
1
S G D
TO-92
Page 2
Thermal Characteristics
Package I
TO-92 1.2A 8.0A 1.0W 125 170 1.2A 8.0A
TO-39 1.7A 10.0A 6.0W 21 125 1.7A 10.0A
* I
(continuous) is limited by max rated Tj.
D
(continuous)* ID (pulsed) Power Dissipation
D
@ TC = 25°C °C/W °C/W
θ
jc
θ
ja
IDR*I
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
VN2210
DRM
BV
V
∆V
I
GSS
I
DSS
DSS
GS(th)
GS(th)
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage 0.8 2.4 V VGS = VDS, ID = 10mA
Change in V
with Temperature -4.3 -5.5 mV/°CVGS = VDS, ID = 10mA
GS(th)
Gate Body Leakage 1 100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current 50 µAV
100 V VGS = 0V, ID = 10mA
10 mA V
I
D(ON)
ON-State Drain Current 3 4.5 VGS = 5V, VDS = 25V
817 VGS = 10V, VDS = 25V
R
DS(ON)
Static Drain-to-Source
ON-State Resistance
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
with Temperature 0.85 1.2 %/°CVGS = 10V, ID = 4A
DS(ON)
Forward Transconductance 1.2 VDS = 25V, ID = 2A
Input Capacitance 300 500
Common Source Output Capacitance 125 200 pF
Reverse Transfer Capacitance 50 65
Turn-ON Delay Time 10 15
Rise Time 10 15
Turn-OFF Delay Time 50 65
Fall Time 30 50
Diode Forward Voltage Drop 1.0 1.6 V VGS = 0V, ISD = 4A
Reverse Recovery Time 500 ns VGS = 0V, ISD = 1A
0.4 0.5 VGS = 5V, ID = 1A
0.27 0.35 VGS = 10V, ID = 4A
ns
= 0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating
GS
TA = 125°C
A
Ω
Ω
VGS = 0V, VDS = 25V
f = 1 MHz
= 25V
V
DD
ID = 2A
R
= 10Ω
GEN
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
0V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
VN2210
Output Characteristics
20
16
12
(amperes)
8
D
I
4
0
0102030 5040
VDS (volts)
Transconductance vs. Drain Current
4.0
3.2
VDS = 25V
VGS = 10V
8V
6V
4V
3V
Saturation Characteristics
20
16
12
(amperes)
8
D
I
4
0
0246 108
VDS (volts)
Power Dissipation vs. Case Temperature
10
8
VGS = 10V
8V
6V
4V
3V
2.4
(siemens)
1.6
FS
G
0.8
0
0 1.60.8
10
1
(amperes)
D
I
0.1
TA = -55°C
25°C
150°C
2.4 4.03.2
ID (amperes)
Maximum Rated Safe Operating Area
TO-92 (pulsed)
TO-39 (DC)
TO-92 (DC)
TO-39
(pulsed)
6
(watts)
4
D
P
2
0
1.0
0.8
0.6
0.4
TO-39
TO-92
0 15010050
TC (°C)
Thermal Response Characteristics
1257525
0.01
0.1 100101
TC = 25°C
VDS (volts)
0.2
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1
TO-92
= 25°C
T
C
= 1W
P
D
tP (seconds)
3
Page 4
Typical Performance Curves
BV
Variation with Temperature
DSS
VN2210
On-Resistance vs. Drain Current
1.0
1.1
1.0
(normalized)
DSS
BV
0.9
-50 0 50 100 150
Tj (°C)
Transfer Characteristics
10
VDS = 25V
8
°C
= -55
T
6
(amperes)
4
D
I
2
0
0246810
A
V
GS
(volts)
150
25
°C
°C
0.8
0.6
VGS= 5V
VGS= 10V
(ohms)
0.4
DS(ON)
R
0.2
0
04812 2016
(amperes)
I
D
V
and R Variation with Temperature
DS(ON)GS(th)
1.2
R
@ 10V, 4A
V
GS(th)
DS(ON)
@ 10mA
1.1
1.0
0.9
GS(th)
V (normalized)
0.8
0.7
-50 0 50 100 150
Tj (°C)
2.0
1.6
1.2
0.8
0.4
(normalized)
DS(ON)
R
Capacitance vs. Drain-to-Source Voltage
500
f = 1MHz
375
C
ISS
250
C (picofarads)
125
0
010203040
C
C
OSS
RSS
VDS (volts)
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Gate Drive Dynamic Characteristics
10
8
VDS = 10V
6
900 pF
(volts)
GS
4
V
2
VDS = 40V
300 pF
0
024
(nanocoulombs)
Q
G
6
810
07/08/02
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
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