Page 1
®
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE V
DSS
VN06SP 60 V 0.18 Ω 1.9 A 26 V
■ MAXIMUM CONTINUOUS OUTPUT
CURRENT (#):9 A @ T
■ 5 V LOGIC LEVEL COMPATIBLE INPUT
■ THERMAL SHUT-DOWN
■ UNDER VOLTAG E PROT E CT ION
■ OPEN DRAIN DIAGNOSTIC OUTPUT
■ INDUCTIVE LOAD FAST
DEMAGNETIZATION
■ VERY LOW STAND-BY POWER
DISSIPATION
DESCRIP TION
The VN06SP is a monolithic device made using
STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circ uit.
The open drain diagnostic output indicates: open
load in off state, and in on state, output shorted to
R
DS(on)
=85oC
c
I
n(*)
V
CC
VN06SP
10
1
Powe r SO-10
V
and overtemperature. Fast demagnetization
CC
of inductive loads is archivied by negative (-18V)
load voltage at turn-off.
(*) In = Nominal current according to ISO definition for high side automotive switch (see note 1)
(#) The maximum continuous output current is the the current at T
protection.
= 85 oC for a battery voltage of 13V which does not activate self
c
July 1998
1/9
Page 2
VN06SP
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
(BR)DSS
I
OUT
I
I
-V
I
STAT
V
ESD
P
T
T
CONNECTION DIAGRAMS
Drain-Source Breakdown Voltage 60 V
Output Current (cont.) at Tc = 85 oC9A
Reverse Output Current at Tc = 85 oC-9A
R
Input Current ±10 mA
IN
Reverse Supply Voltage -4 V
CC
Status Current ±10 mA
Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V
Power Dissipation at Tc = 85 oC 27 W
tot
Junction Operating Temperature -40 to 150
j
Storage Temperature -55 to 150
stg
o
C
o
C
CURRENT AND VOLTAGE CONVENTI ONS
2/9
Page 3
VN06SP
THERMAL DATA
R
thj-case
R
thj-amb
When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)
POWER
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
In(*) Nominal Current Tc = 85 oC V
R
I
V
DS(MAX)
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
(di/dt)
(di/dt)
V
demag
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Supply Voltage 5.5 13 26 V
CC
On State Resistance I
on
Supply Current Off State Tj ≥ 25 oC
S
Maximum Voltage Drop I
(^) Turn-on Delay Time Of
Output Current
(^) Rise Time Of Output
Current
(^) Turn-off Delay Time Of
Output Current
(^) Fall Time Of Output
Current
Turn-on Current Slope I
on
Turn-off Current Slope I
off
Inductive Load Clamp
Voltage
2.4
50
≤ 0.5 (note 1) 1.9 A
DS(on)
= 1.9 A
OUT
I
= 1.9 A Tj = 25 oC
OUT
0.36
0.18
50
On State
= 8.5 A Tc = 85 oC 2.75 V
OUT
I
= 1.9 A Resistive Load
OUT
20 µs
15
Input Rise Time < 0.1 µs
I
= 1.9 A Resistive Load
OUT
20 µs
Input Rise Time < 0.1 µs
I
= 1.9 A Resistive Load
OUT
25 µs
Input Rise Time < 0.1 µs
I
= 1.9 A Resistive Load
OUT
6 µs
Input Rise Time < 0.1 µs
= 1.9 A
OUT
I
= IOV
OUT
= 1.9 A
OUT
I
= I
OUT
OV
I
= 1.9 A L = 1 mH -24 -18 -14 V
OUT
0.08 0.51A/µs
0.2 3
3
o
C/W
o
C/W
Ω
Ω
µA
mA
A/µs
A/µs
A/µs
LOGIC INP UT
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
V
I(hyst.)
I
V
IL
IH
IN
ICL
Input Low Level
Voltage
Input High Level
Voltage
Input Hysteresis
Voltage
Input Current VIN = 5 V
V
= 2 V
IN
V
= 0.8 V 25
IN
Input Clamp Voltage IIN = 10 mA
I
= -10 mA
IN
0.8 V
2(•)V
0.5 V
250 500
250
5.5 6
-0.7 -0.3
µA
µA
µA
V
V
3/9
Page 4
VN06SP
ELECTRICAL CHARACTERISTICS (continued)
PROTECT IO N AND DIAG NO S TIC S
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
STAT
V
USD
V
SCL
I
OV
I
I
T
TSD
T
V
t
1(on)
t
1(off)
t
2(off)
t
povl
t
pol
(^) See Switchig Time Waveforms
() The V
exceed 10 mA at the input pin.
note 1:The Nominal Current is the current at T
note 2:I
note 3:t
: minimum load recovery time which desactivates the status output
t
1(off)
: minimum on time after thermal shut down which desactivates status output
t
2(off)
t
povl tpol
Note 2 Relevant Figure Not e 3 Relevant Figure
Status Voltage Output
I
= 1.6 mA 0.4 V
STAT
Low
Under Voltage Shut
5V
Down
AV
Status Clamp Voltage I
Over Current R
Average Current in
= 10 mA
STAT
I
= -10 mA
STAT
< 10 mΩ -40 Tc 125 oC60A
LOAD
R
< 10 mΩ Tc = 85 oC 1.4 A
LOAD
6
-0.7
Short Circuit
OL
Open Load Current
5 80 180 mA
Level
Thermal Shut-down
140
Temperature
Reset Temperature 125
R
Open Load Voltage
OL
Off-State (note 2) 2.5 3.75 5 V
Level
Open Load Filtering
(note 3) 1 5 10 ms
Time
Open Load Filtering
(note 3) 1 5 10 ms
Time
Open Load Filtering
(note 3) 1 5 10 ms
Time
Status Delay (note 3) 5 10 µs
Status Delay (note 3) 50 700 µs
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculat ed to not
IH
= 85 oC for battery voltage of 13V which produces a voltage drop of 0.5 V
= (VCC -VOL)/ROL (see figure)
OL(off)
: minimum open load duration which acctivates the status output
1(on)
: ISO definition (see figure).
c
V
V
o
C
o
C
4/9
Page 5
VN06SP
Switching Ti me Waveforms
FUNCTIONAL DESCRI PT ION
The device has a diagnostic output which
indicates open load conditions in off state as well
as in on state, output shorted to V
CC
and
overtemperature. The truth table shows input,
diagnostic and output voltage level in normal
operation and in fault conditions. The output
signals are processed by internal logic. The
open load diagnostic output has a 5 ms filtering.
The filter gives a continuous signal for the fault
condition after an initial delay of about 5 ms. This
means that a disconnection during normal
operation, with a duration of less than 5 ms does
not affect the status output. Equally, any
re-connection of less than 5 ms during a
disconnection duration does not affect the status
output. No delay occur for the status to go low in
case of overtemperature conditions. From the
falling edge of the input signal the status output
initially low in fault condition (over temperature or
open load) will go back with a delay (t
of overtemperature condition and a delay (t
)in case
povl
pol
) in
case of open load. These feature fully comply
with International Standard Office (I.S.O.)
requirement for automotive High Side Driver.
To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off at a
minimum junction temperature of 140
When the temperature returns to 125
o
C the
o
C.
switch is automatically turned on again. In short
circuit the protection reacts with virtually no
delay, the sensor being located in the region of
the die where the heat is generated. Driving
inductive loads, an internal function of the
device ensures the fast demagnetization with a
typical voltage (V
demag
) of -18V.
This function allows to greatly reduce the power
dissipation according to the formula:
P
= 0.5 • L
dem
load
• (I
)2• [(VCC+V
load
demag
)/V
demag
•f
where f = switching frequency and
V
= demagnetization voltage
demag
Based on this formula it is possible to know
the value of inductance and/or current to avoid
a thermal shut-down. The maximum inductance
which causes the chip temperature to reach the
shut down temperature in a specific thermal
environment, is infact a function of the load
current for a fixed V
CC
, V
demag
and f.
PROTECTING THE DEVICE AGAIST LOAD
DUMP - TEST PULSE 5
The device is able to withstand the test pulse
No. 5 at level II (V
= 46.5V) according to the
s
ISO T/R 7637/1 without any external
component. This means that all functions of the
device are performed as designed after
exposure to disturbance at level II. The VN06SP
is able to withstand the test pulse No.5 at level
III adding an external resistor of 150 ohm
between GND pin and ground plus a filter
capacitor of 1000 µF between V
ground (if R
LOAD
≤ 20 Ω).
pin and
CC
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between GND pin and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -V
is seen by the device. (Vil, Vih
f
thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltage shutdown level is increa- sed
by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [6]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of V
, Vil and V
ih
stat
. This
solution allows the use of a standard diode.
]
5/9
Page 6
VN06SP
TRUTH TABLE
INPUT OUTPUT DIAGNOSTIC
Normal Operation L
H
Open Circuit (No Load) H H L
Over-temperature H L L
Under-voltage X L H
Short load to V
CC
LHL
Figure 1: Waveforms
L
H
H
H
Figure 2: Over Current Test Circuit
6/9
Page 7
Figure 3: Typical Application Circuit With A Schott ky Diode For Reverse Supply Prot ection
VN06SP
Figure 4: Typical Application Circuit With Separ ate Signal Gr ound
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Page 8
VN06SP
PowerSO-10 MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 3.35 3.65 0.132 0.144
A1 0.00 0.10 0.000 0.004
B 0.40 0.60 0.016 0.024
c 0.35 0.55 0.013 0.022
D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.300
E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240
e1.27 0.050
F 1.25 1.35 0.049 0.053
H 13.80 14.40 0.543 0.567
h0.50 0.002
L 1.20 1.80 0.047 0.071
q1.70 0.067
α0
o
o
8
= =
HE
h
A
F
A1
= =
0.25
e
M
D
= =
D1
= =
B
610
51
E2
= =
DETAIL "A"
DETAIL "A"
Q
B
0.10
E1E3
= =
SEATING
PLANE
A
C
α
B
A
E4
= =
SEATING
PLANE
A1
L
= =
0068039-C
8/9
Page 9
VN06SP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information n or for any infrin gement of patents or othe r rights of third parties which may result from its use. No licens e i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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The ST logo is a trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
.
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