Datasheet VLMPG33N1P2, VLMYG33P1Q2 Datasheet (VISHAY)

Page 1
Power SMD LED PLCC-2
19225
DESCRIPTION
The package of the VLM.G33.. is the PLCC-2. It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is filled up with clear epoxy.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-2
• Product series: power
• Angle of half intensity: ± 60°
VLMPG33N1P2/VLMYG33P1Q2
Vishay Semiconductors
FEATURES
• Luminous intensity categorized
• Compatible with automatic placement equipment
• EIA and ICE standard package
• Compatible with IR reflow, vapor phase and wave solder processes according to CECC 00802 and J-STD-020C
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit I
Vmax/IVmin
1.6
• Lead (Pb)-free device
• Preconditioning: acc. to JEDEC level 2a
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
ESD-withstand voltage: up to 2 kV according to JESD22-A114-B
APPLICATIONS
• Automotive: backlighting in dashboards and switches
• Telecommunication: indicator and backlighting in telephone and fax
• Indicator and backlight for audio and video equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
e3
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECHN OLO GY
VLMPG33N1P2-GS08
VLMPG33N1P2-GS18
VLMYG33P1Q2-GS08
VLMYG33P1Q2-GS18
Document Number 81335 Rev. 1.2, 10-Sep-07
Pure green, I
Pure green, I
Yellow green, I
Yellow green, I
= (28 to 71) mcd
V
= (28 to 71) mcd
V
= (45 to 112) mcd
V
= (45 to 112) mcd
V
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
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VLMPG33N1P2/VLMYG33P1Q2
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
1)
VLMPG33../VLMYG33..
PARAMETER TEST CONDITION SYMBOL VAL UE UNIT
Reverse voltage DC Forward current
Surge forward current
2)
73 °C I
T
amb
10 µs I
t
p
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Thermal resistance junction/ ambient
Note:
1)
T
= 25 °C unless otherwise specified
amb
2)
Driving LED in reverse direction is suitable for short term application
mounted on PC board
(pad size > 16 mm
2
)
FSM
T
T
R
V
P
T
amb
stg
thJA
R
F
5V
50 mA
0.2 A
V
j
130 mW
125 °C
- 40 to + 100 °C
- 40 to + 100 °C
400 K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMPG33.., PURE GREEN
PARAMETER TEST CONDITION PART SYMBOL MIN TYP MAX UNIT
= 30 mA VLMPG33N1P2 I
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Temperature coefficient of V
Temperature coefficient of I
Note:
1)
T
= 25 °C unless otherwise specified
amb
I
F
= 30 mA λ
I
F
= 30 mA λ
I
F
= 30 mA
I
F
I
= 30 mA V
F
= 10 µA V
I
R
F
V
IF = 30 mA TC
IF = 30 mA TC
V
d
p
ϕ ± 60 deg
F
R
V
I
28 71 mcd
555 560 565 nm
565 nm
22.5V
5V
- 4 mV/K
- 0.4 %/K
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMYG33.., YELLOW GREEN
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
= 30 mA VLMYG33P1Q2 I
Luminous intensity
Luminous flux/luminous intensity
Dominant wavelength
Peak wavelength
Spectral bandwidth at 50 % I
rel max
Angle of half intensity
Forward voltage
Reverse voltage
Temperature coefficient of V
Temperature coefficient of I
Note:
1)
T
= 25 °C unless otherwise specified
amb
I
F
= 30 mA λ
I
F
= 30 mA λ
I
F
IF = 30 mA
= 30 mA
I
F
I
= 30 mA V
F
= 10 µA V
I
R
F
V
IF = 30 mA T
IF = 30 mA T
V
φ
V/IV
d
p
Δλ 18 nm
ϕ ± 60 deg
F
R
CV
CI
45 112 mcd
3mlm/mcd
566 577 nm
1.7 2.0 2.5 V
5V
- 4 mV/K
- 0.04 %/K
nm
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Document Number 81335
Rev. 1.2, 10-Sep-07
Page 3
VLMPG33N1P2/VLMYG33P1Q2
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION
GROUP LUMINOUS INTENSITY (MCD)
STANDARD OPTIONAL MIN MAX
L
M
N
P
Q
Note:
Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %.
The above type Numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel).
In order to ensure availability, single brightness groups will not be orderable.
In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel.
In order to ensure availability, single wavelength groups will not be orderable.
1 11.2 14.0 2 14.0 18.0
1 18.0 22.4 2 22.4 28.0 1 28.0 35.5 2 35.5 45.0 1 45.0 56.0 2 56.0 71.0 1 71.0 90.0 2 90.0 112.0
COLOR CLASSIFICATION
DOMINANT WAVELENGTH (NM)
GROUP
PURE GREEN YELLOW GREEN
MIN MAX MIN MAX
0 555 559
1 558 561
2 560 563
3 562 565
4
5 566 569
6 568 571
7 570 573
8 572 575
9 574 577
Note: Wavelengths are tested at a current pulse duration of 25 ms and an
accuracy of ± 1 nm.
CROSSING TABLE
VISHAY OSRAM
VLMPG33N1P2 LPT675N1P2 VLMYG33P1Q2 LGT676
TYPICAL CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
100
90
80
70
R
60
50
40
30
20
- Forward Current (mA)
F
I
10
0
10 25 50 75 100 125
16784
T
Figure 1. Forward Current vs. Ambient Temperature
= 400 K/W
thJA
- Ambient Temperature (°C)
amb
600
500
400
30 mA
300
200
100
0
10 mA
- 100
- 200
- Change of Forward Voltage (mV)
F
V
- 300
Δ
- 50 - 25 0 25 50 75 100
T
18615
- Ambient Temperature (°C)
amb
pure green
50 mA
Figure 2. Change of Forward Voltage vs. Ambient Temperature
Document Number 81335 Rev. 1.2, 10-Sep-07
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VLMPG33N1P2/VLMYG33P1Q2
1.2
Vishay Semiconductors
10° 20°
30°
100
Pure green
Yellowgreen
1.0
0.9
0.8
0.7
- Relative Luminous Intensity
Vrel
I
95 10319_1
0.4 0.2 0 0.2 0.4
0.6
40°
50°
60°
70°
8
0.6
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
pure green
1.0
0.8
0.6
0.4
0.2
- Relative Luminous Intensity
V rel
I
0.0
510 530 550 570 590 610
18648
- Wavelength (nm)
Figure 4. Relative Luminous Intensity vs. Wavelength
10
- Forward Current (mA)
F
I
1
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
20392
VF - Forward Voltage (V)
Figure 6. Forward Current vs. Forward Voltage
10
Pure Green
Yellowgreen
1
0.1
- Relative Luminous Intensity
Vrel
I
0.01 1 10 100
20393
IF - Forward Current ( mA )
Figure 7. Rel. Luminous Intensity vs. Forward Current
1.2
yellow green
1.0
0.8
0.6
0.4
0.2
- Relative Luminous Intensity
V rel
I
0.0 520 540 560 580600620
18647
- Wavelength (nm)
Figure 5. Relative Luminous Intensity vs. Wavelength
www.vishay.com 4
3.0
pure green
2.5
2.0
1.5
1.0
0.5
- Relative Luminous Intensity
V rel
I
0.0
- 50 - 25 0 25 50 75 100
18616
T
- Ambient Temperature (°C)
amb
Figure 8. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 81335
Rev. 1.2, 10-Sep-07
Page 5
VLMPG33N1P2/VLMYG33P1Q2
amb
C
C
Vishay Semiconductors
8
pure green
6
4
2
0
- 2
- 4
hange of Dom. Wavelength (nm) Δ λ
- 6
d -
- 8
- 50 - 25 0 25 50 75 100
T
18617
- Ambient Temperature (°C)
Figure 9. Change of Dominant Wavelength vs.
Ambient Temperature
2.5
yellow green
2.0
1.5
1.0
8
yellow green
6
4
2
0
- 2
- 4
hange of Dom. Wavelength (nm) Δλ
- 6
-
d
- 8
- 50 - 25 0 25 50 75 100
- Ambient Temperature (°C)
18620
T
amb
Figure 11. Change of Dominant Wavelength vs.
Ambient Temperature
0.5
- Relative Luminous Intensity
V rel
I
0
- 50 - 25 0 25 50 75 100
18619
- Ambient Temperature (°C)
T
amb
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
PACKAGE DIMENSIONS in millimeters
3.5 ± 0.2
0.10
1.75 ±
Pin identification
CA
+ 0.15
2.8
?
2.4
+ 0.15
3
Drawing-No.: 6.541-5025.01-4 Issue: 8; 22.11.05
95 11314-1
2.2
0.9
Mounting Pad Layout
2.6 (2.8)
1.6 (1.9)
technical drawings according to DIN specifications
1.2
4
area covered with solder resist
4
Document Number 81335 Rev. 1.2, 10-Sep-07
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Page 6
VLMPG33N1P2/VLMYG33P1Q2
Vishay Semiconductors
METHOD OF TAPING/POLARITY AND TAPE AND REEL
SMD LED (VLM3 - SERIES)
Vishay’s LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape.
Adhesive T ape
Blister T ape
Component Cavity
94 8670
TAPING OF VLM.3..
3.5
3.1
3.6
3.4
1.85
1.6
4.1
1.4
3.9
2.05
1.95
4.1
3.9
1.65
Figure 12. Tape Dimensions in mm for PLCC-2
5.75
5.25
2.2
2.0
4.0
8.3
7.7
3.6
0.25
94 8668
REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.)
10.0
13.00
12.75
14.4 max.
9.0
63.5
60.5
94 8665
Identification
Label: Vishay Type Group Tape Code Production Code Quantity
120°
4.5
3.5
2.5
1.5
180 178
Figure 13. Reel Dimensions - GS08
REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED
10.4
13.00
12.75
14.4 max.
8.4
62.5
60.0
18857
Identification
Label: Vishay Type Group Tape Code Production Code Quantity
321 329
120°
4.5
3.5
2.5
1.5
Figure 14. Reel Dimensions - GS18
SOLDERING PROFILE
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
300
255 °C
250
240 °C 217 °C
200
150
Temperature (°C)
max. 120 s
100
max. ramp up 3 °C/s
50
0
0 50 100 150 200 250 300
19885
Time (s)
max. 100 s
max. ramp down 6 °C/s
Figure 15. Vishay Leadfree Reflow Soldering Profile
(acc. to J-STD-020C)
300
250
200
150
100
Temperature (°C)
50
0
TTW Soldering
235 °C...260 °C
first wave
ca. 200 K/s
100 °C...130 °C
0
(acc. to CECC00802)
5 s
2 K/s
forced cooling
50
100
second
wave
ca. 2 K/s
Time (s)
Lead Temperature
dotted line: process limits
150
Figure 16. Double Wave Soldering of Opto Devices (all Packages)
max. 260 °C
245 °C
max. 30 s
max. 2 cycles allowed
948626-1
full line: typical
ca. 5 K/s
200
250
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Document Number 81335
Rev. 1.2, 10-Sep-07
Page 7
VLMPG33N1P2/VLMYG33P1Q2
Vishay Semiconductors
BAR CODE PRODUCT LABEL
106
A
B C D E F G
H
VISHAY
37
20138
A) Type of component B) Manufacturing plant C) SEL - selection code (bin):
e.g.: N1 = code for luminous intensity group
3 = code for color group D) Date code year/week E) Day code (e.g. 3: Wednesday) F) Batch no. G) Total quantity H) Company code
DRY PACKING
The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
Aluminum bag
Label
Reel
RECOMMENDED METHOD OF STORAGE
Dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available:
• Storage temperature 10 °C to 30 °C
• Storage humidity 60 % RH max. After more than 672 h under these conditions moisture
content will be too high for reflow soldering. In case of moisture absorption, the devices will recover
to the former condition by drying under the following condition:
192 h at 40 °C + 5 °C/ - 0 °C and < 5 % RH (dry air/ nitrogen) or
96 h at 60 °C + 5 °C and < 5 % RH for all device containers or
24 h at 100 °C + 5 °C not suitable for reel or tubes. An EIA JEDEC standard JESD22-A112 level 2a label is
included on all dry bags.
CAUTION
1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH)
2. After this bag is opened devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp.
260°C) must be:
a) Mounted within b) S tored at <1
3. Devices require baking before mounting if: a) Humidity Indicator Card is >10% when read at 23°C + b) 2a or 2b is not met.
4. If baking is required, devices may be baked for:
192 hours 96 hours 24 hours
Bag Seal Date: ______________________________
(If blank, see bar code label)
This bag contains
MOISTURE SENSITIVE DEVICES
672 hours
0% RH.
at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen)
at 60±5
at 100±5°C Not suitable for
Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
at factory condition of <
o
Cand <5%RH For
all
device containers or
L E V E L
2a
30°C/60%RH or
5°C or
reels or tubes
or
19786
15973
FINAL PACKING
The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes.
Document Number 81335 Rev. 1.2, 10-Sep-07
Example of JESD22-A112 level 2a label
ESD PRECAUTION
Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag. Electro-static sensitive devices warning labels are on the packaging.
VISHAY SEMICONDUCTORS STANDARD BAR CODE LABELS
The Vishay Semiconductors standard bar code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data.
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Page 8
VLMPG33N1P2/VLMYG33P1Q2
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com 8
Document Number 81335
Rev. 1.2, 10-Sep-07
Page 9
Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1
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