Page 1
VHFD 29
Half Controlled
Single Phase Rectifier Bridge
Including Freewheeling Diode and Field Diodes
V
RSM
V
DSM
VV
900 800 VHFD 29-08io1
1300 1200 VHFD 29-12io1
1500 1400 VHFD 29-14io1
1700 1600 VHFD 29-16io1
Bridge and Freewheeling Diode
Symbol Test Conditions Maximum Ratings
I
dAV
I
① module 32 A
dAVM
I
, I
FRMS
I
, I
FSM
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 440 A2s
(di/dt)
(dv/dt)
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
d
S
d
A
a Max. allowable acceleration 50 m/s
M
d
Weight 35 g
TSM
TRMS
cr
cr
V
RRM
V
DRM
Type
TH = 85°C, module 28 A
per leg 25 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 V t = 8.3 ms (60 Hz), sine 330 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 270 A
VR = 0 V t = 8.3 ms (60 Hz), sine 300 A
VR = 0 V t = 8.3 ms (60 Hz), sine 455 A2s
TVJ = T
VJM
t = 10 ms (50 Hz), sine 365 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 370 A2s
TVJ = 125°C repetitive, IT = 50 A 150 A/ms
f = 50 Hz, tP = 200 ms
VD = 2/3 V
IG = 0.3 A, non repetitive, IT = 0.5 I
DRM
dAV
500 A/ms
diG/dt = 0.3 A/ms
TVJ = T
; VDR = 2/3 V
(vj)m
DRM
1000 V/ms
RGK = ¥; method 1 (linear voltage rise)
10 V
TVJ = T
IT = 0.5 I
VJM
dAVM
tp = 30 ms £ 10 W
tp = 500 ms £ 5W
tp = 10 ms £ 1W
0.5 W
-40...+125 °C
125 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 3000 V~
I
£ 1 mA t = 1 s 3600 V~
ISOL
Creep distance on surface 12.7 mm
Strike distance in air 9.4 mm
Mounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
V
I
dA VM
= 800-1600 V
RRM
= 32 A
3
2
1
6
5
8
Features
●
Package with DCB ceramic base
plate
●
Isolation voltage 3600 V~
●
Planar passivated chips
●
Blocking voltage up to 1600 V
●
Low forward voltage drop
●
Leads suitable for PC board soldering
●
UL registered E 72873
Applications
●
Supply for DC power equipment
●
DC motor control
Advantages
●
Easy to mount with two screws
●
Space and weight savings
●
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
2
10
© 2000 IXYS All rights reserved
1 - 3
Page 2
VHFD 29
Symbol Test Conditions Characteristic Values
, I
I
R
D
VR = V
RRM
; VD = V
DRMTVJ
= T
VJM
£ 5mA
TVJ = 25°C £ 0.3 mA
, V
V
T
F
V
T0
r
T
V
GT
IT, IF = 45 A; TVJ = 25°C £ 1.6 V
For power-loss calculations only (TVJ = 125°C) 0.9 V
15 mW
VD = 6 V; TVJ = 25°C £ 1.0 V
TVJ = -40°C £ 1.2 V
I
GT
VD = 6 V; TVJ = 25°C £ 65 mA
TVJ = -40°C £ 80 mA
TVJ = 125°C £ 50 mA
V
GD
I
GD
I
L
TVJ = T
TVJ = T
IG = 0.3 A; tG = 30 ms; TVJ = 25°C £ 150 mA
;V
VJM
;V
VJM
= 2/3 V
D
= 2/3 V
D
DRM
DRM
£ 0.2 V
£ 5mA
diG/dt = 0.3 A/ms; TVJ = -40°C £ 200 mA
TVJ = 125°C £ 100 mA
I
H
t
gd
TVJ = 25°C; VD = 6 V; RGK = ¥£100 mA
TVJ = 25°C; VD = 0.5V
DRM
£ 2 ms
IG = 0.3 A; diG/dt = 0.3 A/ms
t
q
Q
r
R
thJC
TVJ = 125°C, IT = 15 A, tP = 300 ms, VR = 100 V typ. 150 ms
di/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 V
DRM
75 mC
per thyristor (diode); DC current 1.4 K/W
per module 0.35 K/W
R
thJH
per thyristor (diode); DC current 2.0 K/W
per module 0.5 K/W
10
1: I
, T
= 125°C
GT
VJ
2: I
, T
= 25°C
GT
V
V
G
1
0.1
VJ
, T
= -40°C
3: I
GT
VJ
3
2
1
I
, T
= 125°C
GD
VJ
1 10 100 1000
Fig. 1 Gate trigger range
1000
µs
t
gd
100
typ.
Limit
4: P
5: P
6: P
6
5
4
= 0.5 W
GAV
= 1 W
GM
= 10 W
GM
I
mA
G
T
= 25°C
VJ
Field Diodes
Symbol Test Conditions Maximum Ratings
I
FAV
I
FAVM
I
FRMS
I
FSM
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 50 A2s
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
TH = 85°C, per Diode 4 A
per diode 4 A
per diode 6 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 100 A
VR = 0 V t = 8.3 ms (60 Hz), sine 110 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 85 A
VR = 0 V t = 8.3 ms (60 Hz), sine 94 A
VR = 0 V t = 8.3 ms (60 Hz), sine 50 A2s
TVJ = T
VJM
t = 10 ms (50 Hz), sine 36 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 37 A2s
VR = V
RRM
TVJ = T
VJM
1mA
TVJ = 25°C 0.15 mA
IF = 21 A; TVJ = 25°C 1.83 V
For power-loss calculations only (TVJ = 125°C) 0.9 V
50 mW
per diode; DC current 4.4 K/W
per diode; DC current 5.2 K/W
10
1
10 100 1000
mA
I
G
Fig. 2 Gate controlled delay time t
gd
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
① for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
750
2 - 3
Page 3
VHFD 29
70
A
60
I
F
50
T
40
VJ
T
VJ
30
typ.
= 125°C
= 25°C
max.
20
10
0
0.00.51.01.52.0
V
V
F
Fig. 3 Forward current versus voltage
drop per diode
100
W
80
P
tot
60
40
240
50Hz, 80% V
A
RRM
10
A
2
3
VR = 0 V
s
200
I
FSM
160
120
T
= 45°C
VJ
I2t
T
= 45°C
VJ
T
= 125°C
10
2
VJ
80
T
= 125°C
VJ
40
0
0.001 0.01 0.1 1
s
10
1
23456789110
t
Fig. 4 Surge overload current Fig. 5 I2t versus time per diode
35
A
R
:
thHA
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
I
d(AV)M
30
25
20
15
ms
t
10
20
5
0
0 5 10 15 20 25 30 35
I
d(AV)M
0 204060801001201400
A
T
amb
°C °C
0
0 20406080100120
T
H
Fig. 6 Power dissipation versus direct output current and ambient temperature Fig. 7 Max. forward current versus
heatsink temperature
2.5
K/W
2.0
Z
thJH
1.5
Constants for Z
calculation:
thJH
1.0
iR
(K/W) ti (s)
thi
1 0.007 0.008
0.5
2 0.266 0.05
3 1.127 0.06
4 0.6 0.25
0.0
0.001 0.01 0.1 1 10
s
t
Fig. 8 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
3 - 3
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