Page 1
VHF 28
Half Controlled
Single Phase Rectifier Bridge
with Freewheeling Diode
V
RSM
V
DSM
VV
900 800 VHF 28-08io5
1300 1200 VHF 28-12io5
1500 1400 VHF 28-14io5
1700 1600 VHF 28-16io5
Symbol Test Conditions Maximum Ratings
I
dAV
I
① module 32 A
dAVM
I
, I
FRMS
I
, I
FSM
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 440 A2s
(di/dt)
(dv/dt)
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight 50 g
TSM
TRMS
cr
cr
V
RRM
V
DRM
Type
31
6
4
TK = 85°C, module 28 A
per leg 23 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 V t = 8.3 ms (60 Hz), sine 330 A
T
= T
VJ
VJM
VR = 0 V t = 8.3 ms (60 Hz), sine 300 A
t = 10 ms (50 Hz), sine 270 A
VR = 0 V t = 8.3 ms (60 Hz), sine 455 A2s
TVJ = T
VJM
VR = 0 V t = 8.3 ms (60 Hz), sine 370 A2s
t = 10 ms (50 Hz), sine 365 A2s
TVJ = 125°C repetitive, IT = 50 A 150 A/ms
f =50 Hz, tP =200 ms
VD = 2/3 V
IG = 0.3 A, non repetitive, IT = 1/2 • I
diG/dt = 0.3 A/ms
TVJ = T
RGK = ¥; method 1 (linear voltage rise)
DRM
; VDR = 2/3 V
VJM
DRM
dAV
500 A/ms
1000 V/ms
10 V
TVJ = T
IT = I
TAVM
VJM
tp = 30 ms £ 10 W
tp = 500 ms £ 5W
tp = 10 ms £ 1W
0.5 W
-40...+125 °C
125 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 3000 V~
I
£ 1 mA t = 1 s 3600 V~
ISOL
Mounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
I
dA VM
V
2
8
= 32 A
= 800-1600 V
RRM
2
1
4
3
8
Features
●
Package with DCB ceramic base plate
●
Isolation voltage 3600 V~
●
Planar passivated chips
●
¼" fast-on terminals
●
UL registered E 72873
Applications
●
Supply for DC power equipment
●
DC motor control
Advantages
●
Easy to mount with two screws
●
Space and weight savings
●
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
6
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
① for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 3
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VHF 28
Symbol Test Conditions Characteristic Values
, I
I
R
D
, V
V
T
F
V
T0
r
T
V
GT
I
GT
VR = V
; VD = V
RRM
DRMTVJ
= T
VJM
TVJ = 25°C £ 0.3 mA
£ 5mA
IT, IF = 45 A; TVJ = 25°C £ 1.6 V
For power-loss calculations only (TVJ = 125°C) 0.9 V
15 mW
VD = 6 V; TVJ = 25°C £ 1.0 V
TVJ = -40°C £ 1.2 V
VD = 6 V; TVJ = 25°C £ 65 mA
TVJ = -40°C £ 80 mA
TVJ = 125°C £ 50 mA
V
GD
I
GD
I
L
TVJ = T
TVJ = T
IG = 0.3 A; tG = 30 ms; TVJ = 25°C £ 150 mA
diG/dt = 0.3 A/ms; TVJ = -40°C £ 200 mA
;V
VJM
;V
VJM
= 2/3 V
D
= 2/3 V
D
DRM
DRM
£ 0.2 V
£ 5mA
TVJ = 125°C £ 100 mA
I
H
t
gd
t
q
Q
r
R
thJC
R
thJK
d
S
d
A
a Max. allowable acceleration 50 m/s
TVJ = 25°C; VD = 6 V; RGK = ¥£100 mA
TVJ = 25°C; VD = 1/2 V
IG = 0.3 A; diG/dt = 0.3 A/ms
DRM
£ 2 ms
TVJ = 125°C, IT = 15 A, tP = 300 ms, VR = 100 V typ. 150 ms
di/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 V
DRM
75 mC
per thyristor (diode); DC current 1.4 K/W
per module 0.35 K/W
per thyristor (diode); DC current 2.0 K/W
per module 0.5 K/W
Creepage distance on surface 12.6 mm
Creepage distance in air 6.3 mm
10
1: I
, T
GT
VJ
2: I
, T
GT
3: I
VJ
, T
GT
VJ
V
V
G
1
I
, T
= 125°C
GD
0.1
VJ
1 10 100 1000
Fig. 1 Gate trigger range
1000
µs
t
gd
100
10
2
typ.
= 125°C
= 25°C
= -40°C
1
3
2
4
4: P
5: P
6: P
5
GAV
GM
GM
6
= 0.5 W
= 1 W
= 10 W
mA
I
G
T
= 25°C
VJ
Limit
© 2000 IXYS All rights reserved
1
10 100 1000
mA
I
G
Fig. 2 Gate controlled delay time t
gd
750
2 - 3
Page 3
Fig. 3 Surge overload current per chip
I
: Crest value, t: duration
FSM
Fig. 4 I
2
t versus time (1-10 ms)
per chip
VHF 28
Fig. 5 Max. forward current at
heatsink temperature
Fig. 6 Power dissipation versus direct output current and ambient temperature
Fig. 7 Transient thermal impedance junction to heatsink per chip
© 2000 IXYS All rights reserved
Constants for Z
iR
calculation:
thJK
(K/W) ti (s)
thi
1 0.3441 0.0344
2 1.1554 0.12
3 1.5005 0.5
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