Datasheet V436632S24VXTG-75PC, V436632S24VXTG-75, V436632S24VXTG-10PC Datasheet (Mosel Vitelic)

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MOSEL VITELIC
V436632S24V
3.3VOLT32Mx64HIGHPERFORMANCE PC133 UNBUFFERED SDRAM MODULE
PRELIMINARY

Features

Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 Packages
Fully PC Board Layout Compatible t o INTEL’S Rev 1.0 Module Specification
Single +3.3V (± 0.3V) Power Sup ply
Programmable CAS
Wrap Sequence (Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
All Inputs, Outputs are LVTTL Compat ible
8192 Refresh Cycles every 64 ms
Serial Presence Detect (SPD)
Latency, Burst Length, and

Description

The V436632S24V memory module is organized 33,554,432 x 64 bits in a 168 pin dual in line memory modul e (DIMM). The 32M x 64 unbuffered DIMM uses 8 Mosel-Vitelic 32M x 8 SDRAM. The x64 m odules are ideal for use in high performance computer systems where increased memory density and fast access times are required.
Speed
Part Number
V436632S24VXTG-75PC -75PC, CL=2,3

V436632S24VXTG-75 -75, CL=3

V436632S24VXTG-10PC -10PC, CL=2,3
Grade Configuration

32Mx64

(133 MHz)

32Mx64

(133 MHz)

32Mx64

(100 MHz)
V436632S24V Rev. 1.0 January2002
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MOSEL VITELIC
V436632S24V

Pin Configurations ( Front Side/Back Side)

Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
1 2 3 4 5 6 7 8 9
VSS I/O1 I/O2 I/O3 I/O4 VCC I/O5 I/O6 I/O7 I/O8 I/O9
VSS I/O10 I/O11 I/O12 I/O13 I/O14
VCC I/O15 I/O16 CBO* CB1*
VSS
NC NC
VCC
WE

DQM0

29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56

DQM1

CS0
DU
VSS
A0 A2 A4 A6 A8

A10(AP)

BA1 VCC VCC

CLK0

VSS
DU
CS2 DQM2 DQM3
DU
VCC
NC
NC CB2* CB3*
VSS I/O17 I/O18
57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84
I/O19 I/O20
VCC

I/O21

NC DU

CKE1

VSS I/O22 I/O23 I/O24
VSS I/O25 I/O26 I/O27 I/O28
VCC I/O29 I/O30 I/O31 I/O32
VSS

CLK2

NC
WP SDA SCL VCC
85 86 87 88 89 90 91 92 93 94 95 96 97 98
99 100 101 102 103 104 105 106 107 108 109 110 111 112
VSS I/O33 I/O34 I/O35 I/O36
VCC I/O37 I/O38 I/O39 I/O40 I/O41
VSS I/O42 I/O43 I/O44 I/O45 I/O46
VCC I/O47 I/O48 CB4* CB5*
VSS
NC
NC VCC CAS

DQM4

113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140

DQM5

CS1
RAS
VSS
A1 A3 A5 A7 A9
BA0
A11
VCC

CLK1

A12
VSS

CKE0

CS3 DQM6 DQM7
DU
VCC
NC
NC CB6* CB7*
VSS I/O49 I/O50
141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168
I/O51 I/O52
VCC

I/O53

NC DU NC
VSS I/O54 I/O55 I/O56
VSS I/O57 I/O58 I/O59 I/O60
VCC I/O61 I/O62 I/O63 I/O64
VSS CLK3
NC SA0 SA1 SA2
VCC
Notes:
* T hese pins are not used in this module.

Pin Names

A0–A12 Address Inputs I/O1–I/O64 Data Inputs/Outputs RAS CAS WE BA0, BA1 Bank Selects
, CKE1 Clock Enable
CKE0
0–CS3 Chip Select
CS CLK0–CLK3 Clock Input DQM0–DQM7 Data Mask VCC Power (+3.3 Volts) VSS Ground SCL Clock for Presence Detect
Row Address Strobe Column Address Strobe Read/Write Input
SDA Serial Data OUT for Presence
Detect
SA0–A2 Serial Data IN for Presence
Detect CB0–CB7 Check Bits(x72 Organization) NC No Connection DU Don’t Use
V436632S24V Rev. 1.0 January2002
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MOSEL VITELIC

Module Part Number Information

V436632S24V
MOSEL VITELIC
MANUFACTURED

Block Diagram

DQM0
I/O1–I/O8
DQM1
I/O9–I/O16
V 4 3 66 32 S 2 4 V X T G -XX
WE
CS0
SDRAM
10
10
3.3V WIDTH
DEPTH
168 PIN Unbuffered
DIMM X8 COMPONENT
DQM I/O1–I/O8
DQM I/O1–I/O8
WE
WE
REFRESH
RATE 8K
CS
D0
CS
D1
LVTTL
4 BANKS
DQM4
I/O40–I/O33
DQM5
I/O48–I/O41
COMPONENT A=0.17um
REV LEVEL B=0.14um
10
10
LEAD FINISH
G=GOLD
COMPONENT
PACKAGE, T = TSOP
DQM I/O1–I/O8
DQM I/O1–I/O8
SPEED
75PC = PC133 CL3,2 75 = PC133 CL3 10PC = PC133 CL3,2
WE
CS D4
WE
CS D5
CS2
DQM2
I/O17–I/O24
DQM I/O1–I/O8
10
DQM3
I/O25–I/O32
DQM I/O1–I/O8
10
E2PROM SPD (256 WORD X 8 BITS)
SCL0
SA2 SA1 SA0
CLOCK WIRING
CLOCK INPUT LOAD
CLK0 5 SDRAM CLK1 Termination CLK2 4 SDRAMS +3.3pF Cap CLK3 Termination
WE
WE
47K
SDA
WP
CS
D2
CS
D3
I/O49–I/O56
I/O57–I/O64
CKE0
RAS CAS
WE
A(11:0)
BA0, BA1
V
CC
V
SS
DQM6
DQM7
10
10
WE
DQM I/O1–I/O8
WE
DQM I/O1–I/O8
CKE: SDRAM D0-D7 RAS: SDRAM D0-D7
CAS: SDRAM D0-D7 WE: SDRAM D0-D7
A(11:0): SDRAM D0-D7 BA0, BA1: SDRAM D0-D7
D0-D7
C0-C17
D0-D7
CS D6
CS D7
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MOSEL VITELIC
V436632S24V

Serial Presence Detect Information

A serial presence det ec t storage device –
2
PROM – is assembled onto the module. Informa-
E tion about the m odule configuration, spee d, etc. is
writtenintotheE duction using a serial presence detect protocol (I synchronous 2-wire bus)
2
PROM device during module pro-

SPD-Table

Byte
Number Function Described SPD Entry Value

0 Number of SPD bytes 128 80 80 80 1 Total bytes in Serial PD 256 08 08 08 2 Memory Type SDRAM 04 04 04 3 Number of Row Addresses (without BS bits) 13 0D 0D 0D 4 Number of ColumnAddresses (forx8SDRAM) 10 0A 0A 09 5 Number of DIMM Banks 1 01 01 01 6 Module Data Width 64 40 40 40 7 Module Data Width (continued) 0 00 00 00 8 Module Interface Levels LVTTL 01 01 01

9 SDRAM Cycle Time at CL=3 7.5 ns/10.0 ns 75 75 A0 10 SDRAM Access Time from Clock at CL=3 5.4 ns/6.0 ns 54 54 60 11 Dimm Config (Error Det/Corr.) none 00 00 00

-75PC -75 -10PC
Hex Value
2
C

12 Refresh Rate/Type Self-Refresh,7.8µs828282 13 SDRAM width, Primary x8 08 08 08 14 Error Checking SDRAM Data Width n/a / x8 00 00 00 15 MinimumClockDelayfromBacktoBackRan-

dom Column Address 16 Burst Length Supported 1, 2, 4, 8 0F 0F 0F 17 Number of SDRAM Banks 4 04 04 04 18 SupportedCAS 19 CS 20 WE 21 SDRAM DIMM Module Attributes Non Buffered/Non Reg. 00 00 00 22 SDRAM Device Attributes: General Vcc tol ± 10% 0E 0E 0E 23 Minimum ClockCycle TimeatCAS 24 Maximum Data Access Time from Clock for CL

25 Minimum Clock Cycle Time at CL = 1 Not Supported 00 00 00 26 Maximum Data Access Time from Clockat CL

27 Minimum Row Precharge Time 15 ns/20 ns 0F 14 14

Latencies CS Latency = 0 01 01 01

Latencies WL = 0 01 01 01

=2
=1

Latencies CL = 2, 3 06 06 06

Latency = 2 7.5 ns /10.0 ns 75 A0 A0

=1CLK 010101
t
ccd

5.4 ns/ 6.0 ns 54 60 60

Not Supported 00 00 00

28 Minimum Row Active to Row Active Delay t 29 Minimum RAS to CAS
V436632S24V Rev. 1.0 January2002
Delay t
RCD
RRD

14 ns/15 ns/16 ns 0E 0F 10

15 ns/20 ns 0F 14 14

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MOSEL VITELIC

SPD-Table

V436632S24V

Byte
Hex Value
Number Function Described SPD Entry Value

30 Minimum RAS Pulse Width t 31 Module Bank Density (Per Bank) 256 MByte 40 40 40 32 SDRAM Input Setup Time 1.5 ns/2.0 ns 15 15 20 33 SDRAMInputHold Time 0.8 ns/1.0 ns 08 08 10 34 SDRAM Data Input Setup Time 1.5 ns/2.0 ns 15 15 20 35 SDRAM Data Input Hold Time 0.8 ns/1.0 ns 08 08 10

36-61 Superset Information (May be used in Future) 00 00 00

62 SPDRevision Revision2/1.2 02 02 12 63 Checksum for Bytes 0 - 62 FD 42 B0 64 Manufacturer’s JEDEC ID Code Mosel Vitelic 40 40 40

65-71 Manufacturer’s JEDEC ID Code (cont.) 00 00 00

72 Manufacturing Location

73-90 ModulePartNumber(ASCII) V436632S24V 91-92 PCB Identification Code

93 Assembly Manufacturing Date (Year)
RAS

42 ns/45 ns 2A 2D 2D

-75PC -75 -10PC
94 Assembly Manufacturing Date (Week)

95-98 Assembly Serial Number

99-125 Reserved 00 00 00

126 Intel Specification for Frequency 64 64 64 127 Supported frequency

128+ Unused Storage Location 00 00 00

DC Characteristics

TA=0°Cto70°C; VSS=0V;VDD,V
Symbol Parameter
V V V V I
I
IH
IL
OH
OL
I(L)
O(L)

InputHighVoltage 2.0 VCC+0.3 V Input Low Voltage –0.5 0.8 V OutputHighVoltage (I OutputLowVoltage (I Input Leakage Current, any input

(0 V < V Outputleakage current
(DQ is disabled, 0V < V
< 3.6 V, all other inputs = 0V)
IN
= –4.0 mA) 2.4 V
OUT
=4.0mA) 0.4 V
OUT
OUT<VCC
=3.3V± 0.3V
DDQ
)
Limit Values
–10 10 µA
–10 10 µA
UnitMin. Max.
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MOSEL VITELIC
V436632S24V

Capacitance

TA=0°Cto70°C; VDD=3.3V± 0.3V, f = 1 MHz
Symbol Parameter Limit Values Unit
C
I1
C
I2
C
ICL
C
I3
C
I4
C
IO
C
SC
C
SD
Input Capacitance (A0 to A11, RAS,CAS,WE)85pF
Input Capacitance (CS0-CS3)30pF
Input Capacitance(CLK0-CLK3) 22 pF
Input Capacitance (CKE0, CKE1) 50 pF
Input Capacitance (DQM0-DQM7) 20 pF
Input/Output Capacitance (I/O1-I/064) 20 pF
Input Capacitance (SCL, SA0-2) 8 pF
Input/OutputCapacitance 18 pF
Absolute Maximum Ratings
Parameter Max. Units

VoltageonVDDSupplyRelativetoV VoltageonInputRelativetoV Operating Temperature 0to+70 °C Storage Temperature -55to125 °C Power Dissipation 6.5 W

SS
SS

-1 to 4.6 V

-1 to 4.6 V

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Standby and Refresh Currents
1
V436632S24V
TA=0°Cto70°C, VCC=3.3V± 0.3V
Symbol Parameter Test Conditions -75PC/75 -10PC Unit Note
ICC1 OperatingCurrent Burst length= 4, CL = 3
>=tRC(min),
t
RC
t
>=tCK(min), IO = 0 mA
CK

1840 1680 mA 1,2

2 Bank Interleave Operation
2P Precharged Standby Current in
I
CC
CKE< = VIL(max), tCK>=tCK(min) 16 16 mA
PowerDown Mode
2N Precharged Standby Current in
I
CC
Non-Power Down Mode
3P Active Standby Current in Power
I
CC
CKE> = VIH(min), tCK>=tCK(min), In-

360 280 mA CS =

put changed once in 3 cycles CKE< = VIL(max), tCK>=tCK(min) 80 80 mA
Down Mode
3N Active Standby Current in Non-Pow-
I
CC
er Do wn Mode
4 Burst OperatingCurrent tRC= Infinite, CL = 3,
I
CC
CKE> = VIH(min), tCK>=tCK(min), In­put changed one time
>=tCK(min), IO = 0 mA
t
CK

400 360 mA CS =

1360 960 mA 1, 2

2 Banks Activated

5 Auto Refresh Current tRC>= tRC(min) 1920 1760 mA 1,2

I
CC
6 Self Refresh Current CKE = <0,2V Standard 24 24 mA 1,2
I
CC
L-version 12 12

High

High

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V436632S24V
AC Characteristics
3,4
TA=0°to70°C; VSS=0V;VCC=3.3V± 0.3V , tT=1ns
# Symbol Parameter
Clock and Clock Enable
1tCKClock Cycle Time
CAS
Latency = 3 Latency = 2
CAS
2fCKSystem frequency
Latency = 3
CAS CAS
Latency = 2
3t
4t 5t 6t 7t 8t
CKSP
9t
CKSR
10 t
Common Parameters
11 t 12 t 13 t 14 t 15 t 16 t
Refresh Cycle
17 t
SREX
18 t
Read Cycle
19 t 20 t 21 t 22 t
Write Cycle
23 t 24 t 25 t
Clock Ac ces s Time
AC
CAS
Latency = 3 Latency = 2
CAS Clock High Pulse Width 2.5 2.5 3 ns 6
CH
Clock Low Pulse Width 2.5 2.5 3 ns 6
CL
Input Setup time 1.5 1.5 2 ns 7
CS
InputHoldTime 0.8–0.8– 1 – ns7
CH
CKESetupTime(Powerdownmode) 2–2–2–ns8 CKESetupTime(SelfRefreshExit) 8–8–8–ns9 Transitiontime(riseandfall) 1–1–1–ns
T
RAS to CAS delay 15–20–20–ns
RCD

Cycle Time 70 120k 70 120k 70 120k ns

RC
ActiveCommandPeriod 42–45–45–ns
RAS
PrechargeTime 15–20–20–ns
RP
Bank to Bank Delay Time 14 15 20 ns
RRD
CAS to CAS delay time (same bank) 1–1–1–CLK
CCD
Self Refresh Exit Time RefreshPeriod(8192cycles) 64–64–64–ms8
REF
DataOutHoldTime 3–3–3–ns4
OH
DataOuttoLowImpedanceTime 0–0–0–ns
LZ
Data Out to High Impedance Time 3 7.5 3 7.5 3 8 ns 10
HZ
DQMDataOutDisableLatency 2–2–2–CLK
DQZ
DatainputtoPrecharge(writerecovery) 2–2–1–CLK
DPL
DataIntoActive/refresh 5–5–5–CLK11
DAL
DQMWriteMaskLatency 0–0–0–CLK
DQW
Limit Values
-75PC -75 -10PC
MIN MAX MIN MAX MIN MAX
7.5
7.5
10
133
133
– –
5.4 6
7.5 10
10
10 10
133
100
– –
5.4 6
10
– –
– –
100 100
6 6
–ns9
Unit Note
ns ns
MHz MHz
4,5 ns ns
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V436632S24V

Notes:

1. The specified values are valid when addresses are changed no more than once during tCK(min.) and when No Operation commands are registered on every r ising clock edge during t bank.
(min). Values are shown per module
RC
2. The specified values are valid when data inputs (DQ’s) are stableduring t
RC
(min.).
3. All AC characteristics are shown for device level. An initial pause of 100 µs is required after power-up,then a PrechargeAll Banks command must be given followed by 8 Auto Refresh (CBR) cycles before the Mode Register Set Operation can begin.
4. AC timingtestshave V time is measured between V
=0.4VandVIH= 2.4V with the timingreferenced to the 1.4Vcrossoverpoint.Thetransition
IL
and VIL. All AC measurements assume tT= 1 ns with t he AC output load circuit
IH
shown. Specific tac and toh parameters are measured with a 50 pF only, without any resistiveterminationand with a input signal of 1V / ns edge rate between 0.8V and 2.0V.
+1.4V
50 Ohm
50 pF
50 pF
CLOCK
INPUT
OUTPUT
tSETUP tHOLD
tLZ
tAC
1.4V
tCL
tCH
tOH
t
tAC
T
2.4V
0.4V
1.4V
Z=50 Ohm
I/O
I/O
Measurement conditionsfor
tac and toh
tHZ
5. If clock rising time is longer than 1 ns, a time (t
/2 -0.5) ns has to be added to this parameter.
T
6. Rated at 1.5V
7. If t
is longer than 1 ns, a time (tT-1) ns has to be added to this parameter.
T
8. Any time that the refresh Period has been exceeded, a minimum of two Auto (CBR) Ref resh commands must be given to “wake-up” the device.
9. Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after CKE returns high. Self Refresh Exit is not complete until a time period equal to t
is satisfiedonce the Self Refresh Exit command
RC
is registered.
10. Referenced to the time which the output achieves the open circuit condition,not to output voltage levels.
11. t
V436632S24V Rev. 1.0 January2002
is equivalent to t
DAL
DPL+tRP
.
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Package Diagram

L-DIM-168-30 SDRAM DIMM Module Pac kage
V436632S24V
All measurements in mm
133.37
17.80
127.35
11011 4041 84
3.0
63.68
85 94 95 124 125 168
6.35
3.125
Detail A
2.26
4.45
2.0
RADIUS
1.27 + 0.10
42.18
3.125
BA
6.35
2.0
3.175 Detail B
1.27
2.50
(2.54 max)
35.00
1.27 ± 0.100
4.0
D
1.0 ± 0.05
0.2 ± 0.15
Detail C
Tolerances: ± (0.13) unless otherwise specified.
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MOSEL VITELIC

Label Information

V436632S24V
Module Density
MOSEL VITELIC
Part Number
Criteria of PC100 or PC133
(refer to MVI datasheet)
DIMM manufacture date code
UNBUFFERED DIMM
V436632S24VXXX-XX 256MB CLX PC133U-XXX-542-A XXXX-XXXXXXX Assembly in Taiwan
PC133 54
CL= 3 or 2 (CLK)
= 3 or 2 (CLK)
t
RCD
= 3 or 2 (CLK)
t
RP
-XXXU
2
A
Gerber file Intel PC100 x8 Based
JEDEC SPD Revision 2
= 5.4 ns
t
AC
CAS Latency
2=CL2 3=CL3
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V436632S24V
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© Copyright , MOSEL VITELIC Corp.
The information in this document is subject to change without notice.
MOSEL VITELIC makes no commitment to update or keep cur­rent the information contained in t his document. N o part of this document may be copied or reproduced in any form or by any means without the prior written consent of MOSEL-VITELIC.
V436632S24V Rev. 1.0 January2002
Printedin U.S.A.
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