Page 1
UTC 8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP
TRANSISTOR
FEATURES
*Collector current up to 800mA
*Collector-Emitter voltage up to 20 V
*Complimentary to 8050S
APPLICATIONS
*Class B push-pull audio amplifier
*General purpose applications
1:EMITTER 2: COLLECTOR 3: BASE
1
TO-92
ABSOLUTE MAXIMUM RATINGS
PARAMETERS SYMBOL RATING UNITS
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector dissipation(Ta=25°C
Collector current Ic -800 mA
Junction Temperature T
Storage Temperature T
)
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-base breakdown voltage BV
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage BV
Collector cut-off current I
Emitter cut-off current I
DC current gain(note) h
Collector-emitter saturation voltage VCE(sat) Ic=-500mA,IB=-50mA -0.5 V
Base-emitter saturation voltage VBE(sat) Ic=500mA,IB=-50mA -1.2 V
Base-emitter saturation voltage V
Current gain bandwidth product f
Output capacitance Cob VCB=10V,IE=0
( Ta=25°C ,unless otherwise specified )
CBO
CEO
EBO
Pc 1 W
j
STG
(Ta=25°C,unless otherwise specified)
CBO
CEO
EBO
CBO
EBO
FE
BE
T
Ic=-100µA,IE=0 -30 V
Ic=-1mA,IB=0 -20 V
IE=-100µA,Ic=0 -5 V
VCB=-30V,IE=0 -1 uA
VEB=-5V,Ic=0 -100 nA
VCE=-1V,Ic=-1mA
VCE=-1V,Ic=-150 mA
VCE=-1V,Ic=-500mA
VCE=-1V,Ic=-10mA -1.0 V
VCE=-10V,Ic=-50mA 100 MHz
f=1MHz
-65 ~ +150 °C
-30 V
-20 V
-5 V
150 °C
100
12040110 400
9.0 pF
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
Page 2
UTC 8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK C D E
RANGE 120-200 160-300 280-500
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
0.5
0.4
0.3
0.2
0.1
Ic,Collector current (mA)
0
0 0.4 0.8 1.2 1.6 2.0
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
4
10
Ic=10*IB
3
10
2
10
Saturation voltage (mV)
1
10
VCE(sat)
010-1
10
Ic,Collector current (mA)
VBE(sat)
IB=3.0mA
IB=2.5mA
IB=2.0mA
IB=1.5mA
IB=1.0mA
IB=0.5mA
Fig.2 DC current Gain
3
10
2
10
1
10
HFE, DC current Gain
0
10
0
-1
10
10
Ic,Collector current (mA)
Fig.5 Current gain-bandwidth
10
10
10
product,fT(MHz)
3
2
1
product
1
10
VCE=10V
VCE=1V
3102
10
Fig.3 Base-Emitter on Voltage
2
10
1
10
0
10
Ic,Collector current (mA)
-1
10
0 0.2 0.4 0.6 0.8 1.0
Base-Emitter voltage (V)
Fig.6 Collector output
Capacitance
3
10
2
10
1
10
Cob,Capacitance (pF)
f=1MHz
IE=0
VCE=1V
Current Gain-bandwidth
0
10
1
10
10
10
3
2
0
10
1
10
Ic,Collector current (mA)
2
10
10
0
10
3
0
10
1
10
Collector-Base voltage (V)
2
3
10
10
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
Loading...