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UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL NPN
TRANSISTOR
DESCRIPTION
The UTC8050S is a low voltage high current small signal
NPN transistor, designed for Class B push-pull audio
amplifier and general purpose applications.
FEATURES
*Collector current up to 800mA
*Collector-Emitter voltage up to 20 V
*Complementary to UTC 8550S
1:EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5 V
Collector Dissipation(Ta=25¡æ)
Collector Current Ic 800 mA
Junction Temperature Tj 150 °C
Storage Temperature TSTG -65 ~ +150 °C
Pc 1 W
1
TO-92
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO Ic=100µA,IE=0 30 V
Collector-Emitter Breakdown Voltage BVCEO Ic=1mA,IB=0 20 V
Emitter-Base Breakdown Voltage BVEBO IE=100µA,Ic=0 5 V
Collector Cut-Off Current ICBO VCB=30V,IE=0 1 uA
Emitter Cut-Off Current IEBO VEB=5V,Ic=0 100 nA
DC Current Gain(note) hFE VCE=1V,Ic=1mA
VCE=1V,Ic=150 mA
VCE=1V,Ic=500mA
Collector-Emitter Saturation Voltage VCE(sat) Ic=500mA,IB=50mA 0.5 V
Base-Emitter Saturation Voltage VBE(sat) Ic=500mA,IB=50mA 1.2 V
Base-Emitter Saturation Voltage VBE VCE=1V,Ic=10mA 1.0 V
Current Gain Bandwidth Product fT VCE=10V,Ic=50mA 100 MHz
Output Capacitance Cob VCB=10V,IE=0
f=1MHz
100
12040110 400
9.0 pF
UTC UNISONIC TECHNOLOGIES CO., LTD.
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UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE
RANK C D E
RANGE 120-200 160-300 280-400
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
0.5
0.4
0.3
0.2
0.1
Ic,Collector current (mA)
0
0 0.4 0.8 1.2 1.6 2.0
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
4
10
Ic=10*I
B
3
10
2
10
Saturation voltage (mV)
1
10
10
VBE(sat)
VCE(sat)
0
-1
10
Ic,Collector current (mA)
1
10
IB=3.0mA
IB=2.5mA
IB=2.0mA
IB=1.5mA
IB=1.0mA
IB=0.5mA
10
Fig.2 DC current Gain
3
10
2
10
1
, DC current Gain
10
FE
H
0
10
0
-1
10
10
Ic,Collector current (mA)
Fig.5 Current gain-bandwidth
3
10
10
product
1
VCE=1V
3
2
10
10
Fig.3 Base-Emitter on Voltage
2
10
1
10
0
10
Ic,Collector current (mA)
-1
10
0 0.2 0.4 0.6 0.8 1.0
Base-Emitter voltage (V)
Fig.6 Collector output
3
10
Capacitance
VCE=1V
VCE=10V
2
10
(MHz)
T
1
10
product,f
2
10
1
10
Cob,Capacitance (pF)
f=1MHz
IE=0
Current Gain-bandwidth
3
2
10
0
10
Ic,Collector current (mA)
1
2
10
10
3
10
0
10
0
10
0
10
Collector-Base voltage (V)
1
2
10
10
3
10
UTC UNISONIC TECHNOLOGIES CO., LTD.
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