Datasheet UT9435HZG-AA3-R, UT9435HZG-AE3-R, UT9435HZG-AG6-R, UT9435HZG-S08-R Datasheet (UTC) [ru]
UNISONIC TECHNOLOGIES CO., LTD
UT9435HZ
Power MOSFET
P-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UTC UT9435HZ is a P-channel enhancement power
MOSFET. It has low gate charge, fast switching speed and
perfect R
This device is generally applied in power management
applications.
SYMBOL
DS(ON)
.
ORDERING INFORMATION
Ordering Number Package
UT9435HZG-AA3-R SOT-223
UT9435HZG-AE3-R SOT-23
UT9435HZG-AG6-R SOT-26
UT9435HZG-S08-R SOP-8
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
12345 6 7 8
SGD
SGD
DDG
SSS
--
--
SD
GD
- - -
- - D - D D D
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
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UT9435HZ Power MOSFET
MARKING
SOT-223 SOT-23
SOT-26 SOP-8
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UT9435HZ Power MOSFET
ABSOLUTE MAXIMUM RATINGS (T
=25°C, unless otherwise specified)
A
PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage V
Gate to Source Voltage V
-30 V
DSS
±20 V
GSS
Continuous Drain Current (Note 3) ID ±5.3 A
Pulsed Drain Current (Note 1, 2) IDM ±20 A
SOT-223 2.5 W
Power Dissipation
SOT-23/ SOT-26 0.38 W
SOP-8
PD
2.5 W
Junction Temperature TJ +150 °C
Storage Temperature T
-55 ~ +150 °C
STG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient
ELECTRICAL CHARACTERISTICS (T
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV
Drain-Source Leakage Current I
Gate-Source Leakage Current I
ON CHARACTERISTICS
Gate Threshold Voltage V
Drain-Source On-State Resistance (Note 2) R
On State Drain Current I
DYNAMIC PARAMETERS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
SWITCHING PARAMETERS
Total Gate Charge (Note 2) QG 50 55 nC
Gate-Source Charge QGS 5 nC
Gate-Drain Charge QGD
Turn-ON Delay Time (Note 2) t
Turn-ON Rise Time tR 31 45 ns
Turn-OFF Delay Time t
Turn-OFF Fall Time tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2) VSD VGS=0V, IS =-5.3A -0.84 -1.3 V
Notes: 1. Pulse width limited by T
2. Pulse width ≤300μs, duty cycle ≤2%
3. Surface Mounted on 1in
SOT-23/SOT-26 325 °C/W
SOT-223/SOP-8
θJA
=25°C, unless otherwise specified)
A
VGS=0V, ID=-250µA -30 V
DSS
VDS=-30V,VGS=0V -1 µA
DSS
VDS=0V ,VGS=±20V ±5 µA
GSS
VDS=VGS, ID=-250µA -1 -3 V
GS(TH)
VGS=-10V,ID=-5.3A 44 55 mΩ
DS(ON)
D(ON)
ISS
OSS
RSS
D(ON)
D(OFF)
V
=-4.5V, ID=-4.2A 74 135 mΩ
GS
VDS=-5V, VGS=-10V -20 V
600 pF
V
=-15V,VGS=0V,
DS
95 pF
f=1.0MHz
V
=-15V,VGS=-10V,
DS
I
=-5.3A
D
33 40 ns
=-15V, ID=-1A,
V
DD
V
122 130 ns
=-10V, RG=6Ω,
GEN
50 (Note 3) °C/W
85 pF
5 nC
70 90 ns
J(MAX)
2
copper pad of FR4 board
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UT9435HZ Power MOSFET
TYPICAL CHARACTERISTICS
(µA)
D
Drain Current, -I
(µA)
D
Drain Current, -I
(A)
S
(A)
D
Drain Current, -I
Body-Diode Continuous Current, -I
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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