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UT54ACS244/UT54ACTS244
Radiation-Hardened
Octal Buffers & Line Drivers, Three-State Outputs
FEATURES
Three-state outputs drive bus lines or buffer memory address
registers
radiation-hardened CMOS
- Latchup immune
High speed
Low power consumption
Single 5 volt supply
Available QML Q or V processes
Flexible package
- 20-pin DIP
- 20-lead flatpack
DESCRIPTION
The UT54ACS244 and the UT54ACTS244 are non-inverting
octal buffer and line drivers which improve the performance and
density of three-state memory address drivers, clock drivers,
and bus-oriented receivers and transmitters.
The devices are characterized over full military temperature
range of -55 C to +125 C.
FUNCTION TABLE
INPUTS OUTPUT
1G, 2G A Y
L L L
L H H
H X Z
PINOUTS
1G
1A1
2Y4
1A2
2Y3
1A3
2Y2
1A4 2A2
2Y1 1Y4
V
SS
20-Pin DIP
Top View
1 20
1G
SS
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
1A1
2Y4
1A2
2Y3
1A3
2Y2
1A4 2A2
2Y1 1Y4
V
V
DD
2G
1Y1
2A4
1Y2
2A3
1Y3
2A1
20-Lead Flatpack
Top View
1 20
2 19
3 18
4 17
5 16
6 15
7 14
8 13
9 12
10 11
V
DD
2G
1Y1
2A4
1Y2
2A3
1Y3
2A1
LOGIC SYMBOL
(1)
1G EN
(2)
1A1
(4)
1A2
(6)
1A3
(8)
1A4
(19)
2G EN
(11)
2A1
(13)
2A2
(15)
2A3
(17)
2A4
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
(18)
(16)
(14)
(12)
(9)
(7)
(5)
(3)
1Y1
1Y2
1Y3
1Y4
2Y1
2Y2
2Y3
2Y4
159 RadHard MSI Logic
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LOGIC DIAGRAM
UT54ACS244/UT54ACTS244
(1)
1G
1A1
1A2
1A3
1A4
(2)
(4)
(6)
(8)
(18)
(16)
(14)
(12)
1Y1
1Y2
1Y3
1Y4
RADIATION HARDNESS SPECIFICATIONS
PARAMETER LIMIT UNITS
Total Dose 1.0E6 rads(Si)
SEU Threshold
2
SEL Threshold 120
Neutron Fluence 1.0E14
(19)
2G
(11)
2A1
(13)
2A2
(15)
2A3
(17)
2A4
1
80
(9)
2Y1
(7)
2Y2
(5)
2Y3
(3)
2Y4
MeV-cm2/mg
MeV-cm2/mg
2
n/cm
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER LIMIT UNITS
V
DD
V
I/O
T
STG
T
J
T
LS
JC
I
I
P
D
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Maximum junction temperature +175 C
Lead temperature (soldering 5 seconds) +300 C
Thermal resistance junction to case 20 C/W
Supply voltage -0.3 to 7.0 V
Voltage any pin -.3 to VDD +.3 V
Storage Temperature range -65 to +150 C
DC input current 10 mA
Maximum power dissipation 1 W
RadHard MSI Logic 160
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UT54ACS244/UT54ACTS244
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER LIMIT UNITS
V
DD
V
IN
T
C
Supply voltage 4.5 to 5.5 V
Input voltage any pin 0 to V
DD
Temperature range -55 to + 125 C
V
161 RadHard MSI Logic
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UT54ACS244/UT54ACTS244
DC ELECTRICAL CHARACTERISTICS
7
(VDD = 5.0V 10%; VSS = 0V 6, -55 C < TC < +125 C)
SYMBOL PARAMETER CONDITION MIN MAX UNIT
V
IL Low-level input voltage
ACTS
ACS
V
IH
High-level input voltage
ACTS
ACS
I
IN
Input leakage current
ACTS/ACS VIN = V
V
OL
Low-level output voltage
ACTS
ACS
V
OH High-level output voltage
ACTS
ACS
I
OL Output current
10
(Sink)
1
0.8
.3V
DD
1
.5V
DD
.7V
DD
or V
DD
3
I
= 12.0mA
OL
I
= 100 A
OL
3
I
= -12.0mA
OH
I
= -100 A
OH
VIN = VDD or V
SS
SS
-1
.7V
DD
VDD - 0.25
12 mA
1 A
0.40
0.25
VOL = 0.4V
V
V
V
V
I
OH
Output current
10
(Source)
I
OZ
I
OS Short-circuit output current
Three-state output leakage current VO = VDD and V
ACTS/ACS
P
total Power dissipation
I
DDQ
I
DDQ
Quiescent Supply Current VDD = 5.5V 10 A
Quiescent Supply Current Delta
2,8,9
ACTS
C
IN
C
OUT Output capacitance
Input capacitance
5
5
2 ,4
VIN = VDD or V
SS
-12 mA
VOH = VDD - 0.4V
SS
-30 30 A
VO = VDD and V
SS
-300 300 mA
CL = 50pF 2.0 mW/
MHz
For input under test
1.6 mA
VIN = VDD - 2.1V
For all other inputs
VIN = VDD or V
V
= 5.5V
DD
SS
= 1MHz @ 0V 15 pF
= 1MHz @ 0V 15 pF
RadHard MSI Logic 162
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UT54ACS244/UT54ACTS244
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but
are guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
163 RadHard MSI Logic
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UT54ACS244/UT54ACTS244
AC ELECTRICAL CHARACTERISTICS
2
(VDD = 5.0V 10%; VSS = 0V 1, -55 C < TC < +125 C)
SYMBOL PARAMETER MINIMUM MAXIMUM UNIT
t
PLH
t
PHL
t
PZL
t
PZH
t
PLZ
t
PHZ
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose 1E6 rads(Si).
Input to Yn 1 11 ns
Input to Yn 1 11 ns
G low to Yn active 2 12 ns
G low to Yn active 2 12 ns
G high to Yn three-state 2 12 ns
G high to Yn three-state 2 12 ns
RadHard MSI Logic 164
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