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195 RadHard MSI Logic
UT54ACS279/UT54ACTS279
Radiation-Hardened
Quadruple S-R Latches
FEATURES
radiation-hardened CMOS
- Latchup immune
High speed
Low power consumption
Single 5 volt supply
Available QML Q or V processes
Flexible package
- 16-pin DIP
- 16-lead flatpack
DESCRIPTION
The UT54ACS279 and the UT54ACTS279 contain four basic
S-R flip-flop latches. Under conventional operation, the S-R
inputs are normally held high. When the S input is pulsed low,
the Q output will be set high. When R is pulsed low, the Q
output will be reset low. If the S-R inputs are taken low simultaneously, the Q output is unpredictable.
The devices are characterized over full military temperature
range of -55 C to +125 C.
FUNCTION TABLE
Note:
1. This configuration is nonstable. It may not persist when the S and R inputs
return to their inactive (high) level.
LOGIC DIAGRAM
PINOUTS
16-Pin DIP
Top View
16-Lead Flatpack
Top View
LOGIC SYMBOL
INPUTS OUTPUT
S R Q
H H Q
0
L H H
H L L
L L
H
1
R
S1
S2
Q
(LATCHES 1 & 3)
R
S
Q
(LATCHES 2 & 4)
1
2
3
4
5
7
6
16
15
14
13
12
10
11
1R
1S1
1S2
1Q
2R
2S
2Q
V
DD
4S
4R
4Q
3S2
3S1
3R
8 9V
SS
3Q
1
2
3
4
5
7
6
16
15
14
13
12
10
11
V
DD
1R
1S1
1S2
1Q
2R
2S
2Q
4S
4R
4Q
3S2
3S1
3R
V
SS
3Q
8
9
1Q
(4)
(7)
2Q
3Q
(9)
(13)
4Q
(1)
1R
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and IEC
Publication 617-12.
R
(2)
1S1
S1
(3)
1S2
S1
(5)
2R
R
(6)
2S
S2
(10)
3R
R
(11)
3S1
S3
(12)
3S2
S3
(14)
4R
R
(15)
4S
S4
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RadHard MSI Logic 196
UT54ACS279/UT54ACTS279
RADIATION HARDNESS SPECIFICATIONS
1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER LIMIT UNITS
Total Dose 1.0E6 rads(Si)
SEU Threshold
2
80
MeV-cm2/mg
SEL Threshold 120
MeV-cm2/mg
Neutron Fluence 1.0E14
n/cm
2
SYMBOL PARAMETER LIMIT UNITS
V
DD
Supply voltage -0.3 to 7.0 V
V
I/O
Voltage any pin -.3 to VDD +.3 V
T
STG
Storage Temperature range -65 to +150 C
T
J
Maximum junction temperature +175 C
T
LS
Lead temperature (soldering 5 seconds) +300 C
JC
Thermal resistance junction to case 20 C/W
I
I
DC input current 10 mA
P
D
Maximum power dissipation 1 W
SYMBOL PARAMETER LIMIT UNITS
V
DD
Supply voltage 4.5 to 5.5 V
V
IN
Input voltage any pin 0 to V
DD
V
T
C
Temperature range -55 to + 125 C
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197 RadHard MSI Logic
UT54ACS279/UT54ACTS279
DC ELECTRICAL CHARACTERISTICS
7
(VDD = 5.0V 10%; VSS = 0V 6, -55 C < TC < +125 C)
SYMBOL PARAMETER CONDITION MIN MAX UNIT
V
IL
Low-level input voltage
1
ACTS
ACS
0.8
.3V
DD
V
V
IH
High-level input voltage
1
ACTS
ACS
.5V
DD
.7V
DD
V
I
IN
Input leakage current
ACTS/ACS VIN = V
DD
or V
SS
-1
1 A
V
OL
Low-level output voltage
3
ACTS
ACS
I
OL
= 12.0mA
I
OL
= 100 A
0.40
0.25
V
V
OH
High-level output voltage
3
ACTS
ACS
I
OH
= -12.0mA
I
OH
= -100 A
.7V
DD
VDD - 0.25
V
I
OS
Short-circuit output current
2 ,4
ACTS/ACS
VO = VDD and V
SS
-300 300 mA
I
OL Output current
10
(Sink)
VIN = VDD or V
SS
VOL = 0.4V
12 mA
I
OH
Output current
10
(Source)
VIN = VDD or V
SS
VOH = VDD - 0.4V
-12 mA
P
total
Power dissipation
2, 8, 9
CL = 50pF 2.1 mW/
MHz
I
DDQ
Quiescent Supply Current VDD = 5.5V 10 A
I
DDQ
Quiescent Supply Current Delta
ACTS
For input under test
VIN = VDD - 2.1V
For all other inputs
VIN = VDD or V
SS
V
DD
= 5.5V
1.6 mA
C
IN
Input capacitance
5
= 1MHz @ 0V 15 pF
C
OUT
Output capacitance 5
= 1MHz @ 0V 15 pF
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RadHard MSI Logic 198
UT54ACS279/UT54ACTS279
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but
are guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
AC ELECTRICAL CHARACTERISTICS
2
(VDD = 5.0V 10%; VSS = 0V 1, -55 C < TC < +125 C)
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose 1E6 rads(Si).
SYMBOL PARAMETER MINIMUM MAXIMUM UNIT
t
PLH
S to Q 1 15 ns
t
PHL
S to Q 1 18 ns
t
PHL
R to Q 1 17 ns
t
W
Minimum pulse width
S low
R low
8 ns
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