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177 RadHard MSI Logic
UT54ACS253/UT54ACTS253
Radiation-Hardened
Dual 4-Input Multiplexers, Three-State Outputs
FEATURES
Permits multiplexing from N lines to 1 line
Performs parallel-to-serial conversion
radiation-hardened CMOS
- Latchup immune
High speed
Low power consumption
Single 5 volt supply
Available QML Q or V processes
Flexible package
-16-pin DIP
-16-lead flatpack
DESCRIPTION
The UT54ACS253 and the UT54ACTS253 are 1-line to 4-line
multiplexers that contain drivers to supply full binary decoding.
Separate output control inputs are provided for each of the two
four-line sections.
Use the three-state outputs to drive data lines in bus-organized
systems. With all but one of the common outputs disabled the
low-impedance of the single enable output will drive the bus
line to a high or low logic level. Each output has its own strobe
(G).
The devices are characterized over full military temperature
range of -55 C to +125 C.
FUNCTION TABLE
PINOUTS
16-Pin DIP
Top View
16-Lead Flatpack
Top View
LOGIC SYMBOL
SELECT
INPUTS
DATA INPUTS OUTPUT
CONTROL
OUTPUT
B A C0 C1 C2 C3 G Y
X X X X X X H Z
L L L X X X L L
L L H X X X L H
L H X L X X L L
L H X H X X L H
H L X X L X L L
H L X X H X L H
H H X X X L L L
H H X X X H L H
1
2
3
4
5
7
6
16
15
14
13
12
10
11
1G
B
1C3
1C2
1C1
1C0
1Y
V
DD
2G
A
2C3
2C2
2C1
2C0
8 9
V
SS
2Y
1
2
3
4
5
7
6
16
15
14
13
12
10
11
V
DD
1G
B
1C3
1C2
1C1
1C0
1Y
2G
A
2C3
2C2
2C1
2C0
V
SS
2Y
8
9
(14)
A
(2)
B
1
0
MUX
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
(1)
1G
EN
(6)
1C0 0
(5)
1C1
(4)
1C2
(3)
1C3
(15)
2G
(10)
2C0
(11)
2C1
(7)
1Y
2C2
(13)
2C3
(9)
2Y
(12)
1
2
3
G
0
3
---
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RadHard MSI Logic 178
UT54ACS253/UT54ACTS253
LOGIC DIAGRAM
(7)
1Y
(9)
2Y
(1)
(6)
(5)
(4)
(3)
(2)
(14)
(10)
(11)
(12)
(13)
2C3
2C2
2C1
2C0
A
B
1C3
1C2
1C1
1C0
1G
(15)
OUTPUT
CONTROL
OUTPUT
CONTROL
2G
DATA 1
DATA 2
SELECT
1G
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179 RadHard MSI Logic
UT54ACS253/UT54ACTS253
RADIATION HARDNESS SPECIFICATIONS
1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER LIMIT UNITS
Total Dose 1.0E6 rads(Si)
SEU Threshold
2
80
MeV-cm2/mg
SEL Threshold 120
MeV-cm2/mg
Neutron Fluence 1.0E14
n/cm
2
SYMBOL PARAMETER LIMIT UNITS
V
DD
Supply voltage -0.3 to 7.0 V
V
I/O
Voltage any pin -.3 to VDD +.3 V
T
STG
Storage Temperature range -65 to +150 C
T
J
Maximum junction temperature +175 C
T
LS
Lead temperature (soldering 5 seconds) +300 C
JC
Thermal resistance junction to case 20 C/W
I
I
DC input current 10 mA
P
D
Maximum power dissipation 1 W
SYMBOL PARAMETER LIMIT UNITS
V
DD
Supply voltage 4.5 to 5.5 V
V
IN
Input voltage any pin 0 to V
DD
V
T
C
Temperature range -55 to + 125 C
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RadHard MSI Logic 180
UT54ACS253/UT54ACTS253
DC ELECTRICAL CHARACTERISTICS
7
(VDD = 5.0V 10%; VSS = 0V 6, -55 C < TC < +125 C)
SYMBOL PARAMETER CONDITION MIN MAX UNIT
V
IL
Low-level input voltage
1
ACTS
ACS
0.8
.3V
DD
V
V
IH
High-level input voltage
1
ACTS
ACS
.5V
DD
.7V
DD
V
I
IN
Input leakage current
ACTS/ACS VIN = V
DD
or V
SS
-1
1 A
V
OL
Low-level output voltage
3
ACTS
ACS
I
OL
= 8.0mA
I
OL
= 100 A
0.40
0.25
V
V
OH
High-level output voltage
3
ACTS
ACS
I
OH
= -8.0mA
I
OH
= -100 A
.7V
DD
VDD - 0.25
V
I
OS Short-circuit output current
2 ,4
ACTS/ACS
VO = VDD and V
SS
-200
200
mA
I
OZ
Three-state output leakage current VO = VDD and V
SS
-20 20 A
I
DDQ
Quiescent Supply Current VDD = 5.5V 10 A
I
OL
Output current
10
(Sink)
VIN = VDD or V
SS
VOL = 0.4V
8 mA
I
OH
Output current
10
(Source)
VIN = VDD or V
SS
VOH = VDD - 0.4V
-8 mA
P
total
Power dissipation
2, 8, 9
CL = 50pF 2.1 mW/
MHz
I
DDQ
Quiescent Supply Current VDD = 5.5V 10 A
I
DDQ
Quiescent Supply Current Delta
ACTS
For input under test
VIN = VDD - 2.1V
For all other inputs
VIN = VDD or V
SS
V
DD
= 5.5V
1.6 mA
C
IN Input capacitance
5
= 1MHz @ 0V 15 pF
C
OUT
Output capacitance 5
= 1MHz @ 0V 15 pF
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181 RadHard MSI Logic
UT54ACS253/UT54ACTS253
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but
are guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
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RadHard MSI Logic 182
UT54ACS253/UT54ACTS253
AC ELECTRICAL CHARACTERISTICS
2
(VDD = 5.0V 10%; VSS = 0V 1, -55 C < TC < +125 C)
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose 1E6 rads(Si).
SYMBOL PARAMETER MINIMUM MAXIMUM UNIT
t
PLH
Select to output Yn 2 12 ns
t
PHL
Select to output Yn 2 16 ns
t
PLH
Data to output Yn 2 14 ns
t
PHL
Data to output Yn 2 16 ns
t
PZH
G low to Yn active 2 12 ns
t
PZL
G low to Yn active 1 12 ns
t
PHZ
G high to Yn three-state 2 11 ns
t
PLZ
G high to Yn three-state 2 10 ns
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