Datasheet UT54ACTS14, UT54ACS14 Datasheet (Aeroflex UTMC)

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25 RadHard MSI Logic
UT54ACS14/UT54ACTS14
Radiation-Hardened Hex Inverting Schmitt Triggers
FEATURES
radiation-hardened CMOS
- Latchup immune High speed Low power consumption
Single 5 volt supply
Available QML Q or V processes
Flexible package
- 14-pin DIP
- 14-lead flatpack
DESCRIPTION
The UT54ACS14 and the UT54ACTS14 are hex inverters. The circuits perform the Boolean function Y = A.
The devices are characterized over full military temperature range of -55 C to +125 C.
FUNCTION TABLE
LOGIC SYMBOL
PINOUTS
14-Pin DIP
Top View
14-Lead Flatpack
Top View
LOGIC DIAGRAM
INPUT OUTPUT
A Y H L L H
Y1 Y2 Y3
Y4
(1)
A1
(5)
A3
(11)
A5
(13)
A6
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and IEC Publication 617-12.
1
(3)
A2
(9)
A4
(2)
(10) (12)
(4)
(8)
Y5 Y6
(6)
A1 Y1
A2 Y2 A3 Y3
V
SS
V
DD
A6 Y6 A5 Y5 A4 Y4
1 14 2 13 3 12 4 11 5 10 6 9 7 8
V
DD
A6 Y6 A5 Y5 A4 Y4
A1 Y1
A2 Y2 A3 Y3
V
SS
1 14 2 13 3 12 4 11 5 10 6 9 7 8
Y4
Y3
Y1
Y2
Y6
Y5
A4
A3
A1
A2
A6
A5
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RadHard MSI Logic 26
UT54ACS14/UT54ACTS14
RADIATION HARDNESS SPECIFICATIONS
1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER LIMIT UNITS
Total Dose 1.0E6 rads(Si)
SEU Threshold
2
80
MeV-cm2/mg
SEL Threshold 120
MeV-cm2/mg
Neutron Fluence 1.0E14
n/cm
2
SYMBOL PARAMETER LIMIT UNITS
V
DD
Supply voltage -0.3 to 7.0 V
V
I/O
Voltage any pin -.3 to VDD +.3 V
T
STG
Storage Temperature range -65 to +150 C
T
J
Maximum junction temperature +175 C
T
LS
Lead temperature (soldering 5 seconds) +300 C
JC
Thermal resistance junction to case 20 C/W
I
I
DC input current 10 mA
P
D
Maximum power dissipation 1 W
SYMBOL PARAMETER LIMIT UNITS
V
DD
Supply voltage 4.5 to 5.5 V
V
IN
Input voltage any pin 0 to V
DD
V
T
C
Temperature range -55 to + 125 C
Page 3
27 RadHard MSI Logic
UT54ACS14/UT54ACTS14
DC ELECTRICAL CHARACTERISTICS
7
(VDD = 5.0V 10%; VSS = 0V 6, -55 C < TC < +125 C)
SYMBOL PARAMETER CONDITION MIN MAX UNIT
V
T+
Schmitt Trigger, positive going1 threshold
ACTS ACS
2.25
.7V
DD
V
V
T-
Schmitt Trigger, negative going1 threshold ACTS ACS
0.5
.3V
DD
V
V
H
Schmitt Trigger, typical range of hysteresis
2
ACTS ACS
0.3
0.6
0.9
1.5
V
I
IN
Input leakage current
ACTS/ACS VIN = VDD or V
SS
-1 1 A
V
OL
Low-level output voltage
3
ACTS ACS
IOL = 8.0mA IOL = 100 A
0.40
0.25
V
V
OH
High-level output voltage
3
ACTS ACS
IOH = -8.0mA IOH = -100 A
.7V
DD
VDD-0.25
V
I
OS
Short-circuit output current
2,4
ACTS/ACS
VO = VDD and V
SS
-200
200 mA
I
OL Output current
10
(Sink)
VIN = VDD or V
SS
VOL = 0.4V
8 mA
I
OH
Output current
10
(Source)
VIN = VDD or V
SS
VOH = VDD - 0.4V
-8 mA
P
total
Power dissipation
2, 8, 9
CL = 50pF 1.8 mW/
MHz
I
DDQ
Quiescent Supply Current VDD = 5.5V 10 A
I
DDQ
Quiescent Supply Current Delta ACTS
For input under test VIN = VDD - 2.1V
For all other inputs VIN = VDD or V
SS
V
DD
= 5.5V
3.1 mA
C
IN
Input capacitance
5
= 1MHz @ 0V 15 pF
C
OUT Output capacitance
5
= 1MHz @ 0V 15 pF
Page 4
RadHard MSI Logic 28
UT54ACS14/UT54ACTS14
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
AC ELECTRICAL CHARACTERISTICS
2
(VDD = 5.0V 10%; VSS = 0V 1, -55 C < TC < +125 C)
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose 1E6 rads(Si)
SYMBOL PARAMETER MINIMUM MAXIMUM UNIT
t
PHL
Input to Yn 2 14 ns
t
PLH
Input to Yn 2 13 ns
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