Datasheet UT54ACTS139, UT54ACS139 Datasheet (Aeroflex UTMC)

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77 RadHard MSI Logic
UT54ACS139/UT54ACTS139
Radiation-Hardened
FEATURES
radiation-hardened CMOS
- Latchup immune
• High speed
• Low power consumption
• Available QML Q or V processes
• Flexible package
- 16-pin DIP
- 16-lead flatpack
DESCRIPTION
The UT54ACS139 and the UT54ACTS139 are designed to be used in high-performance memory-decoding or data-routing ap­plications requiring very short propagation delay times.
The devices consist of two individual two-line to four-line de­coders in a single package. The active-low enable input can be used as a data line in demultiplexing applications.
The devices are characterized over full military temperature range of -55 C to +125 C.
FUNCTION TABLE
PINOUTS
16-Pin DIP
Top View
16-Lead Flatpack
Top View
LOGIC DIAGRAM
ENABLE
INPUTS
SELECT
INPUTS
OUTPUT
G B A Y0 Y1 Y2 Y3 H X X H H H H
L L L L H H H L L H H L H H L H L H H L H L H H H H H L
1 2 3
4 5
7
6
16 15 14
13 12
10
11
IG
1A
1B 1Y0 1Y1 1Y2 1Y3
V
DD
2G 2A 2B 2Y0 2Y1 2Y2
8 9
V
SS
2Y3
1 2
3 4 5
7
6
16
15 14 13 12
10
11
V
DD
1G 1A
1B 1Y0 1Y1 1Y2 1Y3
2G 2A 2B 2Y0 2Y1 2Y2
V
SS
2Y3
8 9
1Y0
1Y1
1Y2
1Y3
DATA
(4)
(5)
(6)
(7)
(1)
(2) (3)
1G
1B
SELECT
2Y0
2Y1
2Y2
2Y3
(12)
(11)
(10)
(9)
(15)
(14) (13)
2G
2B
SELECT
1A
2A
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RadHard MSI Logic 78
UT54ACS139/UT54ACTS139
LOGIC SYMBOL
RADIATION HARDNESS SPECIFICATIONS
1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
PARAMETER LIMIT UNITS
Total Dose 1.0E6 rads(Si)
SEU Threshold
2
80
MeV-cm2/mg
SEL Threshold 120
MeV-cm2/mg
Neutron Fluence 1.0E14
n/cm
2
(9)
2Y3
(2)
1A
(3)
1B
(1)
1G
(14)
2A
(13)
2B
(15)
2G
2
1
(10)
2Y2
(11)
2Y1
(12)
2Y0
(7)
1Y3
(6)
1Y2
(5)
1Y1
(4)
1Y0
X/Y
EN
1 2
0
3
(2)
1A
(3)
1B
(1)
1G
(14)
2A
(13)
2B
(15)
2G
1
0
DMUX
1 2
0
3
(9)
2Y3
(10)
2Y2
(11)
2Y1
(12)
2Y0
(7)
1Y3
(6)
1Y2
(5)
1Y1
(4)
1Y0
Note:
1. Logic symbols in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
G
0
3
---
SYMBOL PARAMETER LIMIT UNITS
V
DD
Supply voltage -0.3 to 7.0 V
V
I/O
Voltage any pin -.3 to VDD +.3 V
T
STG
Storage Temperature range -65 to +150 C
T
J
Maximum junction temperature +175 C
T
LS
Lead temperature (soldering 5 seconds) +300 C
JC
Thermal resistance junction to case 20 C/W
I
I
DC input current 10 mA
P
D
Maximum power dissipation 1 W
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79 RadHard MSI Logic
UT54ACS139/UT54ACTS139
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER LIMIT UNITS
V
DD
Supply voltage 4.5 to 5.5 V
V
IN
Input voltage any pin 0 to V
DD
V
T
C
Temperature range -55 to + 125 C
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RadHard MSI Logic 80
UT54ACS139/UT54ACTS139
DC ELECTRICAL CHARACTERISTICS
7
(VDD = 5.0V 10%; VSS = 0V 6, -55 C < TC < +125 C)
SYMBOL PARAMETER CONDITION MIN MAX UNIT
V
IL Low-level input voltage
1
ACTS ACS
0.8
.3V
DD
V
V
IH
High-level input voltage
1
ACTS ACS
.5V
DD
.7V
DD
V
I
IN
Input leakage current
ACTS/ACS
VIN = V
DD
or V
SS
-1 1 A
V
OL
Low-level output voltage
3
ACTS ACS
I
OL
= 8.0mA
I
OL
= 100 A
0.40
0.25
V
V
OH
High-level output voltage
3
ACTS ACS
I
OH
= -8.0mA
I
OH
= -100 A
.7V
DD
VDD - 0.25
V
I
OL Output current
10
(Sink)
VIN = VDD or V
SS
VOL = 0.4V
8 mA
I
OH
Output current
10
(Source)
VIN = VDD or V
SS
VOH = VDD - 0.4V
-8 mA
I
OS
Short-circuit output current
2 ,4
ACTS/ACS
VO = VDD and V
SS
-200 200 mA
P
total
Power dissipation
2, 8, ,9
CL = 50pF 1.8 mW/
MHz
I
DDQ
Quiescent Supply Current VDD = 5.5V 10 A
I
DDQ
Quiescent Supply Current Delta ACTS
For input under test VIN = VDD - 2.1V
For all other inputs VIN = VDD or V
SS
V
DD
= 5.5V
1.6 mA
C
IN Input capacitance
5
= 1MHz @ 0V 15 pF
C
OUT
Output capacitance 5
= 1MHz @ 0V 15 pF
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81 RadHard MSI Logic
UT54ACS139/UT54ACTS139
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed to VIH(min) and VIL(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
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RadHard MSI Logic 82
UT54ACS139/UT54ACTS139
AC ELECTRICAL CHARACTERISTICS
2
(VDD = 5.0V 10%; VSS = 0V 1, -55 C < TC < +125 C)
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose 1E6 rads(Si).
SYMBOL PARAMETER MINIMUM MAXIMUM UNIT
t
PHL
Select to output Yn 2 14 ns
t
PLH
Select to output Yn 2 15 ns
t
PHL
Enable to output Yn 2 14 ns
t
PLH
Enable to output Yn 2 12 ns
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