PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current ID -4 A
Pulsed Drain Current (Note 1, 2) IDM -20 A
SOT-89
Total Power Dissipation (TA = 25°C)
Junction Temperature TJ +150 °C
Storage Temperature T
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Drain-Source Breakdown Voltage BV
Drain-Source Leakage Current I
Gate-Source Leakage Current I
V
DSS
VDS =-24V, VGS =0 V 1 µA
DSS
VDS =0 V, VGS = ±20V ±100 nA
GSS
=0 V, ID =-250µA -30 V
GS
ON CHARACTERISTICS
Gate Threshold Voltage V
Drain-Source On-State Resistance (Note 2) R
VDS =VGS, ID =-250 µA -0.9 -1.5 -3 V
GS(TH
V
=-4.5V, ID =-3A 60 75
GS
DS(ON)
VGS =-10V, ID =-4A 37 45
m
DYNAMIC PARAMETERS
Input Capacitance C
Reverse Transfer Capacitance C
ISS
V
135
OSS
70
RSS
=-15V, VGS =0V, f=1MHz
DS
530
pF Output Capacitance C
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2) t
Turn-ON Rise Time tR 10
Turn-OFF Delay Time t
D(ON
=-10V,VDS=-15V,RG=6,
V
GS
I
=-1A
18
D(OFF
D
5.7
ns
Turn-OFF Fall Time tF 5
Total Gate Charge (Note 2) QG
Gate-Source Charge QGS 2.2
Gate-Drain Charge QGD 2
V
DS
I
=-4A
D
=0.5BV
, VGS =-10V,
DSS
10 14
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD IF = -1A, V
= 0V -1.2 V
GS
Maximum Body-Diode Continuous Current IS -2.1
Maximum Pulsed Drain-Source Diode
Forward Current (Note
1)
Reverse Recovery Time tRR
Recovery Charge QRR 7.9 nC
Notes: 1. Pulse width limited by T
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in
J(MAX)
2
copper pad of FR4 board.
I
-4
SM
=-4 A, dIF/dt=100A/s
I
F
15.5 ns
A
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UT06P03 Power MOSFET
TYPICAL CHARACTERISTICS
25
20
15
10
5
0
DS(ON)
On-Region Characteristics
VGS=-10V
-5.0V
-6.0V
0
Drain to Source Voltage,-V
-4.5V
-4.0V
-3.5V
-3.0V
On-Resistance Variation with Drain
2.4
2.2
Current and Gate Voltage
VGS=-4V
2.0
-4.5V
1.8
1.6
1.4
-6.0V
-7.0V
-8.0V
1.2
-10V
1.0
0.8
4321
DS
5
(V)
0
102030
Drain Current,-I
40
(A)
D
50
(Ω)
DS(ON)
Normalized Drain-Source On-
(A)
D
Drain Current,-I
Resistance,R
On-Resistance,R
(A)
S
Reverse Drain Current,-I
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Page 5
UT06P03 Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
(V)
GS
Capacitance (pF)
Gate-Source Voltage,-V
(A)
D
Drain Current,-I
0.1
0.01
Power (W)
Transient Thermal Response Curve
1
D=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
t
1
t
R
(t)=r(t)×RθJA
θJA
R
=160℃/W
JA
θ
=P×R
T
J-TA
Duty Cycle,D=t
2
θJA
(t)
1/t2
0.001
0.0001
0.001
0.010.11
Time,t
(ms)
1
10100
1000
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Page 6
UT06P03 Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated v alues (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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