Page 1
L
T
C
T
1.5V Drive Nch+Pch MOSFET
US6M11
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zFeatures
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.
2) Low on-resistance.
3) Low voltage drive (1.5V drive).
4) Built-in G-S Protection Diode.
zApplications zInner circuit
Switching
zPackaging specifications
Type
US6M11
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Tr1 : Nchannel Tr2 : Pchannel
∗1
∗1
∗2
Limits
±10
±1.5
±6
0.5
6
−55 to +150
−12
±10
±1.3
±5.2
−0.5
−5.2
1.0
0.7
150
zThermal resistance
Parameter
hannel to ambient
∗ Mounted on a ceramic board
Symbol Limits Unit
125
Rth(ch-a)
∗
179
°C/W / ELEMEN
TUMT6
(6)
∗2
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Unit
V20
V
A
A
A
A
W / TOTA
W / ELEMEN
°C
°C
°C/W / TOTAL
Abbreviated symbol : M11
(5)
∗1
∗1
(2)
(4)
∗2
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(3)
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
0.2Max.
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
Page 2
<N-ch>
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗Pulsed
<P-ch>
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
V
R
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗Pulsed
Min.−Typ. Max.
I
GSS
− ±10 µAVGS= ±10V, VDS=0V
20 −−VID= 1mA, VGS=0V
I
DSS
GS (th)
−−1 µAV
0.3 − 1.0 V V
− 130 180 I
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
− 220 310 I
∗
1.6 −−SV
fs
− 110 − pF V
iss
− 1815− pF V
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
5
−
5
−
20
−
3
−
1.8
−
0.3
−
0.3
−−nC R
− 170 240 mΩ
∗
Min. Typ. Max.
∗
V
SD
−−1.2 V IS= 1.5A, VGS=0VForward voltage
Min.−Typ. Max.
I
GSS
−
−12 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
−−−1 µAV
−0.3 −−1.0 V V
− 190 260 I
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
− 400 600 I
∗
1.4 −−SV
fs
− 290 − pF V
iss
− 2821− pF V
oss
−
rss
∗
∗
t
r
∗
∗
t
f
∗
g
∗
gs
∗
gd
8
−
10
−
30
−
9
−
2.4
−
0.6
−
0.4
−−nC R
− 280 390 mΩ
∗
Min. Typ. Max.
∗
V
SD
−−−1.2 V IS= −1.3A, VGS=0VForward voltage
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC I
±10
− pF f=1MHz
− ns
− ns
− ns
− ns
− nC
− nC I
Unit
DS
DS
= 1.5A, VGS= 4.5V
mΩ
D
= 1.5A, VGS= 2.5V
I
D
= 0.8A, VGS= 1.8V
mΩ
D
mΩ− 300 600 I
= 0.3A, VGS= 1.5V
D
DS
DS
GS
V
DD
ID= 1A
GS
V
L
10Ω
R
G
=10Ω
R
V
DD
= 1.5A
D
L
Unit
Unit
µAVGS=
DS
DS
= −1.3A, VGS= −4.5V
mΩ
D
= −0.6A, VGS= −2.5V
I
D
= −0.6A, VGS= −1.8V
mΩ
D
mΩ− 530 1060 I
= −0.2A, VGS= −1.5V
D
DS
DS
GS
V
DD
ID= −0.6A
GS
V
L
10Ω
R
G
= 10Ω
R
V
DD
= −1.3A
D
4.6Ω, RG= 10Ω
L
Unit
Conditions
= 20V, VGS=0V
= 10V, ID= 1mA
= 10V, ID= 1.5A
= 10V
=0V
10V
= 4.5V
10V, VGS= 4.5V
6.7Ω, RG= 10Ω
Conditions
Conditions
±10
V, VDS=0V
= −12V, VGS=0V
= −6V, ID= −1mA
= −6V, ID= −1.3A
= −6V
= 0V
−6V
= −4.5V
−6V, VGS= −4.5V
Conditions
Data Sheet US6M11
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
Page 3
V
V
V
zElectrical characteristic curves
<Nch>
1.5
[A]
D
1
0.5
DRAIN CURRENT : I
0
0 0.2 0.4 0.6 0.8 1
VGS= 10
VGS= 4.5
VGS= 2.5
VGS= 1. 8V
VGS= 1.5V
VGS= 1.3V
VGS= 1. 2V
Ta=25°C
Pulsed
1.5
VGS= 4.5V
= 1.8V
V
GS
[A]
D
1
0.5
DRAIN CURRENT : I
0
0246810
VGS= 1. 5V
VGS= 1. 1V
VGS= 1.3V
Ta= 25°C
Pulsed
10
VDS= 10V
Pulsed
[A]
D
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
DRAIN CURRENT : I
0.01
0.001
00.5 11.52
Data Sheet US6M11
DR AIN-SOU RCE VOLTAGE : VDS[V] DR AIN-SOU RCE VOLTAGE : VDS[V]
Fi g.1 Typi cal Output C haract eris tics(Ⅰ) Fi g.2 T ypic al Output C haract eris tics(Ⅱ)
10000
Ta= 25°C
Pulsed
]
Ω
1000
(on)[m
DS
100
RESIST ANCE : R
STATIC DRAIN -SOUR CE ON- STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : I
Fi g.4 Stati c Dr ain- Source On- State
Resi stance vs. D rain C urr ent(Ⅰ)
10000
VGS= 1. 8V
Pulsed
]
Ω
1000
(on) [m
DS
100
RESIST ANCE : R
STATIC DRAIN -SOUR CE ON- STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fi g.7 Stati c Dr ain- Source On- State
Resistance vs. Dr ain Cur rent(Ⅳ)
VGS= 1.5V
V
= 1.8V
GS
= 2.5V
V
GS
V
= 4.5V
GS
[A]
D
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
10000
VGS= 4.5V
Pulsed
]
Ω
1000
(on) [m
DS
100
RESIST ANCE : R
STATIC DRAIN -SOUR CE ON- STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fi g.5 St atic D rain- Sourc e On-State
Resistance vs. Drain Curr ent(Ⅱ)
10000
VGS= 1. 5V
Pulsed
]
Ω
1000
(on) [m
DS
100
RESIST ANCE : R
STATIC DRAIN -SOUR CE ON- STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fi g.8 St atic D rain- Sourc e On-State
Resi stance vs. D rain C urr ent(Ⅴ)
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
GATE- SOURCE VOLT AGE : VGS[V]
Fi g.3 T ypical Trans fer C haracter isti cs
10000
VGS= 2. 5V
Pulsed
]
Ω
1000
(on) [m
DS
100
RESIST ANCE : R
STATIC DRAIN -SOUR CE ON- STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fi g.6 Stati c Dr ain- Source On- State
Resistance vs. Dr ain Cur rent(Ⅲ)
10
VDS= 10V
Pulsed
1
0.1
FOR WARD T RANSFER ADMITT ANCE : |Yfs | [S]
0.01 0.1 1 10
DRAIN-CURRENT : ID[A]
Fi g.9 F orward Tr ansfer Admittance
vs. Dr ain Curr ent
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
Page 4
Data Sheet US6M11
10
VGS=0V
Pulsed
1
0.1
REVER SE DRAIN CURR ENT : Is [A]
0.01
0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
Fi g.10 R evers e Drai n Curr ent
vs. Sours e-D rain Voltage
5
[V]
GS
4
3
2
1
GATE-SOU RCE VOLTAGE : V
0
00.511.52
TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : VDS[V]
Fi g.13 D ynamic I nput Char acteri stic s Fi g.14 T ypical Capaci tance
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
Ta= 25°C
= 10V
V
DD
I
= 1. 5A
D
=10Ω
R
G
Pulsed
600
]
500
Ω
400
(ON)[m
DS
300
200
RESIST ANCE : R
100
STATIC DRAIN-SOURCE ON-STATE
0
0246810
Fi g.11 Stat ic D rain- Source On- State
Resis tance vs. Gate Source Voltag e
1000
Ta= 25°C
f=1MH z
V
GS
100
CAPACITANCE : C [pF]
10
0.01 0.1 1 10 100
ID= 0. 8A
ID= 1.5A
GATE-SOU RCE VOLTAGE : VGS[V]
=0V
Crss
vs. Drain- Source Voltag e
Ciss
Coss
Ta= 25°C
Pulsed
1000
td(off)
t
100
10
td(on)
SWITC HING TIM E : t [ns]
1
0.01 0.1 1 10
f
t
r
DRAIN-CURRENT : ID[A]
Fi g.12 Swi tching Chara cteri stic s
Ta= 25°C
V
= 10V
DD
V
=4.5V
GS
=10Ω
R
G
Pulsed
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
Page 5
<Pch>
[A]
D
DRAIN CURRENT : -I
1.5
0.5
2
1
Ta=25°C
Pulsed
VGS= -1.8V
VGS= -1.2V
VGS= - 10V
V
= -4.5V
GS
V
= -2.5V
GS
VGS= -1.5V
Data Sheet US6M11
2
VGS= -4.5V
V
= -2.5V
1.5
[A]
D
1
0.5
DRAIN CURRENT : -I
V
GS
GS
= -1.8V
VGS= -1.5V
VGS= -1.2V
VGS= -1.0V
Ta= 25°C
Pulsed
10
VDS= -6V
Pulsed
1
[A]
D
Ta= 125°C
Ta= 75°C
0.1
Ta= 25°C
Ta= - 25°C
0.01
DRAIN CURRENT : -I
0
0 0.2 0.4 0.6 0.8 1
DR AIN-SOUR CE VOLTAGE : -VDS[V] DR AIN-SOUR CE VOLTAGE : - VDS[V]
Fi g.1 Typic al output char acteri stics (Ⅰ) Fig .2 Typical output characteristi cs(Ⅱ)
10000
Ta=25°C
Pulsed
]
Ω
1000
(ON)[m
DS
100
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0. 1 1 10
DRAIN-CURRENT : -I
Fig .4 Static D rain-Source On-State
Resistance vs. Drain C urr ent(Ⅰ)
VGS= -1.5V
V
GS
V
GS
V
GS
= -1.8V
= -2.5V
= -4.5V
D
0
0246 810
10000
VGS= -4.5V
Pulsed
]
Ω
1000
(ON)[m
DS
100
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0. 1 1 10
[A]
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain C urr ent(Ⅱ)
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.001
00.5 11.52
GATE-SOUR CE VOLTAGE : -VGS[V]
Fi g.3 Typic al Tr ansfer C haracter istic s
10000
VGS= -2.5V
]
Pulsed
Ω
(ON)[m
1000
DS
100
RESISTAN CE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0. 1 1 10
DRAIN-CURRENT : -ID[A]
Fi g.6 Stati c Dr ain-Sour ce On-State
Resistance vs. Drain C urr ent(Ⅲ)
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10000
VGS= -1.8V
Pulsed
]
Ω
1000
(ON)[m
DS
100
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0. 1 1 10
DRAIN-CURRENT : -ID[A]
Fi g.7 Stati c Dr ain-Sour ce On-Stat e
Resistance vs. Drain C urr ent(Ⅳ)
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
10000
VGS= -1.5V
Pulsed
]
Ω
1000
(ON)[m
DS
Ta= 125°C
100
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
10
0.01 0.1 1 10
DRAIN-CURRENT : -I
Fig.8 Static Drain-Source On-State
Resistance vs. Drain C urr ent(Ⅳ)
Ta=75°C
Ta=25°C
Ta= -25°C
10
VDS= -6V
Pulsed
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
FOR WARD T RANSFER ADMITT ANCE : |Yfs| [S]
0.01 0.1 1 10
[A]
D
DRAIN-CURRENT : -ID[A]
Fi g.9 For ward Tr ansfer Admit tance
vs. Drain Curr ent
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
Page 6
Data Sheet US6M11
10
VGS=0V
Pulsed
1
Ta= 125°C
0.1
REVERSE DRAIN CURRENT : -Is [A]
0.01
00.5 11.5
SOUR CE-DR AIN VOLTAGE : -VSD [V]
Fi g.10 Rever se Drai n Curr ent
vs. Sourse- Drain Voltag e
5
[V]
GS
4
3
2
1
GATE- SOURC E VOLTAGE : - V
0
0 0.5 1 1.5 2 2.5 3
TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : -VDS[V]
Fi g.13 D ynamic I nput Charac teris tics Fi g.14 Typi cal Capac itance
Ta= 75°C
Ta= 25°C
Ta= -25°C
Ta= 25°C
V
= -6V
DD
I
= -1.3A
D
R
=10Ω
G
Pulsed
600
]
Ω
500
(ON)[m
400
DS
300
200
RESISTAN CE : R
100
STATIC DRAIN-SOURCE ON-STATE
0
0246 810
Fi g.11 Stati c Dr ain-Sour ce On-Stat e
Res istance vs. Gate Source Vol tage
1000
100
10
CAPACITANCE : C [pF]
1
0.01 0. 1 1 10 100
Ta=25°C
Pulsed
ID= -0.6A
ID= -1.3A
GATE-SOU RCE VOLTAGE : - VGS[V]
Ciss
Coss
Crss
vs. Dr ain-Source Voltag e
Ta=25°C
f=1M Hz
V
=0V
GS
1000
t
f
100
SWIT CHING T IME : t [ns]
10
t
r
1
0.01 0.1 1 10
Fi g.12 Swit ching Charac teris tics
td(off)
td(on)
DRAIN-CURRENT : -ID[A]
Ta= 25°C
V
= -6V
DD
V
= -4.5V
GS
R
=10Ω
G
Pulsed
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
Page 7
F
it
%
%
V
V
Pulse Width
F
it
V
Fig.3-1 Switching Time Measurement Circuit
%
V
V
Fig.4-1 Gate Charge Measurement Circuit
V
zMeasurement circuit
<Nch>
V
GS
D.U.T.
R
G
Data Sheet US6M11
D
I
V
DS
R
L
10%
GS
V
DD
DS
10%
90%
50%50%
10
ig.1-1 Switching Time Measurement Circu
V
I
G (Const.)
GS
R
G
D
I
D.U.T.
R
L
V
DD
ig.2-1 Gate Charge Measurement Circu
<Pch>
V
GS
D
I
R
L
D.U.T.
R
G
V
DD
V
DS
V
DS
t
d(on)
90%
t
t
t
on
d(off)
r
Fig.1-2 Switching Waveforms
V
G
g
Q
GS
QgsQ
gd
Fig.2-2 Gate Charge Waveform
Pulse Width
GS
10%
50%
DS
t
90% 90%
d(on)
t
on
90%
10% 10
t
t
d(off)
r
90
t
t
off
Charge
50%
t
t
off
r
r
Fig.3-2 Switching Waveforms
V
G
GS
QgsQ
g
Q
gd
I
G(Const.)
D
I
V
GS
V
DS
R
L
D.U.T.
R
G
V
DD
Charge
Fig.4-2 Gate Charge Waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
Page 8
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
Notice
The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes ef forts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machiner y, nuclear-reactor controller,
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of
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Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
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