Datasheet US5U35 Datasheet (ROHM)

Transistor

s

(

4V Drive Pch+SBD MOSFET

US5U35

zStructure Silicon P-channel MOSFET Schottky Barrier DIODE

zFeatures

1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package.

2) With fast switching.

3) Built-in schottky barrier diode has low forward voltage.

zApplications

Switchi ng

zPackaging specifications

Type

US5U35

Package Code Basic ordering unit (pieces)

Taping

TR

3000

zDimension

TUMT5

Unit : mm)

Abbreviated symbol : U35

zEquivalent circuit

(5)

US5U35

2.0

1.3

0.2Max.

(4)

∗2

∗1 ESD protection diode ∗2 Body diode

(1) (2)

∗1

(3)

(1)Gate (2)Source (3)Anode (4)Cathode (5)Drain

1/5

Transistor

zAbsolute maximum ratings (Ta=25°C)

Parameter Drain-source voltage Gate-source voltage

Drain current Source current

(Body diode) Channel temperature

Power dissipation

Continuous Pulsed Continuous Pulsed

Symbol

V

DSS

V

GSS

I

D

∗1

I

DP

I

S

∗1

I

SP

Tch 150

∗3

P

D

Limits Unit

−45

±20 ±0.7 ±2.8

−0.4

−2.8

0.7

W / ELEMENT

<Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation

V

I

V

I

FSM

Tj

P

RM

R

F

∗2

150

∗3

D

0.5

W / ELEMENT

∗3

Power dissipation Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz

P

D

Tstg

•

1cyc. ∗3 Mounted on a ceramic board

1.0

−55 to +150

W / TOTAL

zElectrical characteristics (T a=25°C)

<

MOSFET

Gate-source leakage

Drain-source breakdown voltage Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state resistance

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge

Gate-source charge Gate-drain charge

∗ Pulsed

<

Body diode (source−drain)

Forward voltage

∗ Pulsed

>

Parameter Symbol

I

GSS

(BR) DSS

V

I

DSS

V

GS (th)

R

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

g

gs

Q

gd

Q

>

Parameter Symbol

V

SD

Typ.

−

0.6

0.9

1.0

−

120

14 11

6 5

17

6

1.7

0.8

0.5

Max.

Unit

±10

µAVGS=±20V, VDS=0V

−

VID=−1mA, VGS=0V

−1

µAVDS=−45V, VGS=0V

−2.5

VVDS=−10V, ID=−1mA

0.8

Ω I

1.3

Ω ID=−0.7A, VGS=−4.5V

1.4

Ω I

−

SV

−

pF VDS=−10V

−

pF VGS=0V

−

pF f=1MHz

−

ns ID=−0.35A

−

ns

−

ns

−

ns

−

nC

−

nC

− nC

Unit

D

=−0.7A, VGS=−10V

D

=−0.35A, VGS=−4.0V

DS

V

DD

V

GS

R

L

71Ω

R

G

=10Ω

V

DD

I

D

=−0.7A

RL 36Ω,

Min.

−

−45

−

−1.0

−

∗

−

∗

0.6

−

∗

−

∗

−

∗

−

∗

−

Min. Typ. Max.

∗

−−−1.2 V IS=−0.7A, VGS=0V

<Di>

Parameter Symbol Forward voltage Reverse current

Min. Typ. Max.

V

−−0.55 V IF=100mA

F

I

R

−−30 µAVR=10V

Unit

V V A A A A

°C

V45 V40

mA100

A1.0

°C

Conditions

=−10V, ID=−0.7A

−25V

=−10V

V

−25V,

GS

=−5V

R

G

=10Ω

Conditions

US5U35

2/5

Transistor

zElectrical characteristic curves

(A)

D

0.001

DRAIN CURRENT : −I

0.1

0.01

1

Ta=125°C Ta=75°C Ta=25°C Ta=−25°C

VDS=−10V Pulsed

US5U35

10

(on) (Ω)

Ta=125°C Ta=75°C

DS

Ta=25°C Ta=−25°C

1

VGS=−10V Pulsed

10

Ta=125°C

(on) (Ω)

Ta=75°C

DS

Ta=25°C Ta=−25°C

1

VGS=−4.5V Pulsed

0.0001

1.0

1.5

2.0 2.5 3.0 4.03.5

GATE-SOURCE VOLTAGE : −VGS (V)

Fig.1 Typical Transfer Characteristics

10

Ta=125°C Ta=75°C

(on) (Ω)

Ta=25°C

DS

Ta=−25°C

1

0.1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.01 0.1

DRAIN CURRENT : −ID (A)

VGS=−4V Pulsed

Fig.4 Static Drain-Source

On-State Resistance vs. Drain Current(ΙΙΙ)

10

(V)

GS

8

6

4

2

GATE-SOURCE VOLTAGE : −V

0

01

TOTAL GATE CHARGE : Qg (nC)

Ta=25°C

DD

=−25V

V

D

=−0.7A

I

G

=10Ω

R Pulsed

23

Fig.7 Dynamic Input Characteristics

0.1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.01 0.1

Fig.2 Static Drain-Source

1000

100

10

CAPACITANCE : C (pF)

1

0.01 0.1 1 10 100

1

DRAIN-SOURCE VOLTAGE : −VDS (V)

Fig.5 Typical Capacitance

1

Ta=125°C Ta=75°C Ta=25°C

0.1

Ta=−25°C

0.01

0.001

SOURCE CURRENT : −IS (A)

0.0001 0 0.5

4

SOURCE-DRAIN VOLTAGE : −VSD (V)

Fig.8 Source Current vs.

DRAIN CURRENT : −ID (A)

On-State Resistance vs. Drain Current(Ι)

Ta=25°C f=1MHZ

GS

=0V

V

C

C C

vs. Drain-Source Voltage

VGS=0V Pulsed

1.0

Source-Drain Voltage

0.1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.01 0.1

1

DRAIN CURRENT : −ID (A)

Fig.3 Static Drain-Source

On-State Resistance vs. Drain Current(ΙΙ)

1000

t

iss

oss

rss

100

SWITCHING TIME : t (ns)

f

t

d(off)

10

t

d(on)

t

r

1

0.01 0.1 1

DRAIN CURRENT : −ID (A)

Fig.6 Switching Characteristics

10

Ta=−25°C

1

Ta=25°C Ta=75°C

(S)

Ta=125°C

: Yfs

0.1

FORWARD TRANSFER ADMITTANCE

0.01

1.5

0.001 0.10.01 1

DRAIN CURRENT : −I

Fig.9 Forward Transfer Admittance

vs.Drain Current

Ta=25°C

DD=−25V

V

GS=−10V

V

G=10Ω

R Pulsed

VGS=−10V Pulsed

D

(A)

1

3/5

US5U35

Transistor

10000

Pulsed

1000

100

10

1

0.1

REVERSE CURRENT : IR [uA]

0.01 0 5 10 15 20 25 30 35 40

REVERSE VOLTAGE : VR [V]

Fig.10 Reverse Current vs. Reverse Voltage

Ta = 125

Ta = 75

Ta = 25

Ta= - 25

℃

zNotice

1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low V

characteristics and therefore, higher leak current. Please consider enough the

F

surrounding temperature, generating heat of MOSFET and the reverse current.

2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD pro tection circuit.

0.1 Pulsed

0.01

FORWARD CURRENT : IF(A)

0.001 0 0.1 0.2 0.3 0.4 0.5 0.6

FORWARD VOLTAGE : VF(V)

Fig.11 Forward Current vs. Forward Voltage

Ta = 125

Ta = 75 Ta = 25

Ta= - 25

℃ ℃ ℃ ℃

4/5

Transistor

zMeasurement circuits

V

GS

10%

50%

US5U35

Pulse Width

50%

90%

VGS

RG

D.U.T.

D

I

VDS

RL

VDD

Fig.12 Switching Time Measurement Circuit

V

DS

R

L

V

DD

IG(Const)

I

V

GS

R

G

D

D.U.T.

t

d(off)

10%

90%

t

f

t

off

10%

V

DS

90%

t

r

t

d(on)

t

on

Fig.13 Switching Waveforms

V

G

Qg

V

GS

Qgs Qgd

Charge

Fig.14 Gate Charge Measurement Circuit

Fig.15 Gate Charge Waveforms

5/5

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office.

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Appendix1-Rev2.0