Datasheet US2882L, US2882E, US2881L, US2881E Datasheet (MELEXIS)

US2881/2882

CMOS High Sensitivity Latch

US2881 CMOS High Sensitivity Latch 3901002881 Rev 5.6 23/July/00 Page 1

Description

The design specifications and performance of the Melexis US2881 have been optimized for commutation applications in brushless DC motors and automotive speed sensing.

The output transistor will be latched on (BOP) in the presence of a sufficiently strong South pole magnetic field facing the marked side of the package. Similarly, the output will be latched off (BRP) in the presence of a North field. The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be latched on (BOP) in the presence of a sufficiently strong North pole magnetic field subjected to the marked face.

Functional Diagram

Note: Static sensitive device; please observe ESD precautions. Reverse V

DD

protection is not included. For reverse voltage protection,

a 100

Ω

resistor in series with VDD is recommended.

Output

GND

V

DD

Voltage

Regulator

Chopper

SO Package Pin 1 - V

DD

Pin 2 - Output Pin 3 - GND

UA Package

Pin 1 - V

DD

Pin 2 - GND Pin 3 - Output

Features and Benefits

• Chopper stabilized amplifier stage

• Optimized for BDC motor applications

• New miniature package / thin, high reliability package

• Operation down to 3.5V

• CMOS for optimum stability, quality, and cost

• Ultra low I

DD

current

Applications

• Solid state switch

• Brushless DC motor commutation

• Speed sensing

• Linear position sensing

• Angular position sensing

• Current sensing

Ordering Information

Part No. Temperature Suffix Package Temperature Range

US2881 / US2882 E SO or UA -40oC to 85oC Extended US2881 / US2882 L SO or UA -40oC to 150oC Full Temp.

*Contact Factory or Sales Representative for Legacy Temperature Versions

US2881 CMOS High Sensitivity Latch 3901002881 Rev 5.6 23/July/00 Page 2

US2881/2882

CMOS High Sensitivity Latch

US2881 and US2882 Electrical Specifications

DC operating parameters: TA = 25oC, VDD = 12VDC (unless otherwise specified).

Parameter

Symbol Test Conditions Min Typ Max Units

Supply Voltage VDD Operating 3.5 27 V Supply Current IDD B<BOP 1.5 2.0 4.0 mA Saturation Voltage V

DS(on)

I

OUT

= 20 mA, B>BOP 0.4 0.5 V

Output Leakage I

OFF

B<BRP, V

OUT

= 27V 0.01 5.0 ì A Output Rise Time tr VDD = 12V, RL = 1.1KÙ, CL = 20pf 0.04 ì s Output Fall Time tf VDD = 12V, RL = 1.1KÙ, CL = 20pf 0.18 ì s

US2881 Magnetic Specifications

Parameter Symbol Test Conditions Min Typ Max Units

Operating Point BOP 0.5 2.0 4.5 mT Release Point BRP -4.5 -2.0 -0.5 mT

Hysteresis B

hys

3.0 4.0 5.0 mT

US2882 Magnetic Specifications

Parameter Symbol Test Conditions Min Typ Max Units

Operating Point BOP -2.0 2.0 6.0 mT Release Point BRP -6.0 -2.0 2.0 mT

Hysteresis B

hys

3.0 4.0 5.0 mT

Melexis Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Melexis does not assume any liability arising from the use of any product or application of any product or circuit described herein.

Note: 1 mT = 10 Gauss.

Supply Voltage (Operating), VDD 24V Supply Current (Fault), IDD 50mA Output Voltage, V

OUT

24V

Output Current (Fault), I

OUT

50mA Power Dissipation, PD 100mW Operating Temperature Range, TA -40 to 150°C Storage Temperature Range, TS -65 to 150°C Maximum Junction Temp, TJ 175°C ESD Sensitivity (All Pins) +/- 4KV

Absolute Maximum Ratings

US2881/2882

CMOS High Sensitivity Latch

US2881 CMOS High Sensitivity Latch 3901002881 Rev 5.6 23/July/00 Page 3

Performance Graphs

12.5

Flux Density (mT)

Supply Voltage (V)

Typical Magnetic Switch Points versus Supply Voltage

2881

15

-7.5

-2.5

2.5

7.5

1050 20 25 30

B

OP

B

RP

-12.5

12

-12.5

Flux Density (mT)

Temperature (oC)

Typical Magnetic Switch Points versus Temperature

2881

80

-7.5

-2.5

2.5

7.5

0-40 120 160 20040

B

OP

B

HYS

B

RP

30

Output Voltage (V)

Flux Density (mT)

Output Voltage versus Flux Density

2881

0

6

12

18

24

-10-20-30 10 20 30

0

V

DD

V

out

B

OP

B

RP

12.5

-12.5

Flux Density (mT)

Temperature (oC)

Min/Max Magnetic Switch Range versus Temperature

2881

80

-7.5

-2.5

2.5

7.5

0-40 120 160 20040

B

OP

Max

B

OP

Min

B

RP

Min

B

RP

Max

US2881 CMOS High Sensitivity Latch 3901002881 Rev 5.6 23/July/00 Page 4

US2881/2882

CMOS High Sensitivity Latch

Performance Graphs

280

Solder Temperature (

o

C)

Time in Wave Solder (Seconds)

Wave Soldering Parameters

All Devices

15

200

220

240

260

1050 20 25 30

500

0

Package Power Dissipation (mW)

Temperature (oC)

Power Dissipation versus Temperature

All Devices

80

100

200

300

400

0-40 120 160 20040

SO Package

R

θJA

=575oC/W

UA Package

R

θ

JA

=206oC/W

500

0

V

DS(ON)

(mV)

Temperature (oC)

Typical Saturation Voltage versus Temperature

VDD = 12 V, I

OUT

= 20mA

2881

80

100

200

300

400

0-40 120 160 20040

V

DS(ON)

5

0

Supply Current (mA)

Supply Voltage (V)

Typical Supply Current versus Supply Voltage

2881

15

1

2

3

4

1050 20 25 30

TA = -40oC

TA = 25oC

TA = 125oC

US2881/2882

CMOS High Sensitivity Latch

US2881 CMOS High Sensitivity Latch 3901002881 Rev 5.6 23/July/00 Page 5

Unique Features

CMOS Hall IC Technology

The Chopper Stabilized Amplifier, using switched capacitor techniques, eliminates the amplifier offset voltage, which in bipolar devices is a major source of temperature sensitive drift. CMOS makes this advanced technique possible.

The CMOS chip is also much smaller than the Bipolar chip, allowing very sophisticated circuitry to be placed in less space. The small chip size also contributes to lower physical stress and less power consumption.

Installation

Consider temperature coefficients of Hall IC and magnetics, as well as air gap and life time variations. Observe temperature limits during wave soldering.

Application Comments

If reverse supply protection is desired, use a resistor in series with the VDD pin. The resistor will limit the Supply Current (Fault), IDD, to 50mA. For severe EMC conditions, use the application circuit below.

Applications Examples

Automotive and Severe Environment Protection Circuit

Hall IC

C1

4.7n F

C2

4.7n F

V

DD

V

SS

OUT

R

L

1.2 K

Supply Voltage

D1

R1 100

Ω

Z1

Two Wire Optional Current Biasing Circuit

R

L

R

b

Hall

IC

Iout

I

DD

V

DD

The resistors Rb and RL can be used to bias the input current, Iin. Refer to the part specification for limiting values. This circuit will help in getting the precise ON and OFF currents desired.

BRP = Ioff = (VDD / Rb + I

DD

)

BOP = Ion = (Ioff + VDD / RL )

I

IN

US2881 CMOS High Sensitivity Latch 3901002881 Rev 5.6 23/July/00 Page 6

US2881/2882

CMOS High Sensitivity Latch

Physical Characteristics

U28

105

1 2 3

*

All Dimensions in millimeters

2.13

1.87

0.45

0.41

Marked

Surface

1.53

1.27

UA Hall Plate / Chip Location

1.60

1.40

45

o

Typical

4.30

3.90

2.64

2.34

0.84

0.63

3.20

2.80

1.75

1.55

0.48

0.43

0.20

0.00

0.41

0.35

1.30

1.24

2.57

2.51

5

o

Typical

45

o

Typical

0.38

Typical

(see note 3)

15.5

14.5

0.41

0.35

UA Package Dimensions

* MARKING: Line 1: 1st digit (U) = Supplier (Melexis) 2nd and 3rd digits (28) = Series (2880)

Line 2: 1st digit (1) = Year (2001) 2nd and 3rd digits(05) = Week of Year

PINOUT: Pin 1 V

DD

Pin 2 GND Pin 3 Output

NOTES:

1.) Controlling dimension: mm

2.) Leads must be free of flash and plating voids

3.) Leads must not arc toward the rear of package

4.) Package dimensions exclude molding flash

5.) Tolerance is 0.254mm unless otherwise specified

SOT-23 Hall Plate /

Chip Location (Bottom View)

SOT-23 Package Dimensions

(Top View)

NOTES:

1. MARKING: 1st Digit (2) = Series (2881) 2nd Digit(1) = Year - 2001 Last Digits (04) = Week of Year

2. PINOUT (See Top View at left): Pin 1 VDD Pin 2 Output Pin 3 GND

3. Controlling dimension: mm.

4. Lead thickness after solder plating will be 0.254 mm maximum.

5. Package dimensions exclude molding flash.

6. The end flash shall not exceed 0.127 mm on each side of package.

7. Tolerance is +/- 0.254 mm unless otherwise specified.

1.55

1.45

0.95

0.85

2104

1.30

1.00

0.10

0.00

3.10

2.70

3.00

2.60

0.50

0.35

1.80

1.50 chip

0.66

0.56

0.20 MIN

0.25

0.102.10

1.70

0.90

0.70

*

1

2

3

Pin #

For the latest version of this document, Go to our website at:

WWW.melexis.com

Or for additional information Contact Melexis Direct: Europe and Japan USA and rest of the world E-mail: [email protected] E-mail: [email protected] Phone: 011-32-13-670-780 Phone: (603)-223-2362

US2881/2882

CMOS High Sensitivity Latch

US2881 CMOS High Sensitivity Latch 3901002881 Rev 5.6 23/July/00 Page 7

Revision History.

Note: This page is intended to record changes, but not to be printed for distribution or conversion to a pdf.

Revision Date By Change

5.5 9/28/00 rsa On Page 2, changed units of measure for output rise / fall times from “ms” to “ìs.”