3.1 Port Pins ...................................................................................................................................................6
(detection edge is selectable)
INT1P11
INT2InputP12/TI1/TI2Rising edge detection testable inputAsynch
KR0 to KR3I/OP60 to P63Parallel falling edge detection testable inputInput<F>-A
X1Input—Ceramic/crystal resonator connection for main system——
X2—and input inverted phase to X2.
XT1Input—Crystal resonator connection for subsystem clock oscillation.——
XT2—phase to XT2. XT1 can be used as a 1-bit (test) input.
RESETInput—System reset input (low-level active)—<B>
MD0 to MD3InputP30 to P33Mode selection for program memory (PROM) write/verifyInputE-B
D0 to D3I/O
D4 to D7P50 to P53M-E
Note 2
V
PP
VDD——Positive power supply——
Vss——Ground potential——
P60/KR0 to P63/KR3
——Programmable power supply voltage applied for program——
INT0/P10 can select noise elimination circuit.
clock oscillation. If using an external clock, input signal to X1
If using an external clock, input signal to XT1 and input inverted
Data bus for program memory (PROM) write/verifyInput<F>-A
memory (PROM) write/verify.
For normal operation, connect directly to VDD.
Apply +12.5 V for PROM write/verify.
With noise elimination
circuit/asynch is selectable
after resettype
S0 to S15
S16 to S19
S20 to S23
COM0 to COM3
VLC0 toVLC2——Power supply for driving LCD——
BIASOutput—Output for external split resistor cutNote 2—
LCDCL
Note 3
SYNC
Note 3
Output—Segment signal outputNote 1G-A
Output P93 to P90Segment signal outputInputH
Output P83 to P80Segment signal outputInputH
Output—Common signal outputNote 1G-B
I/OP30/MD0Clock output for driving external expansion driverInputE-B
I/OP31/MD1Clock output for synchronization of external expansion driverInputE-B
Notes 1. The VPP pin does not operate normally if it is not connected with VDD pin when normal operation.
2. The V
LCX (X = 0, 1, 2) shown below are selected as the input source for the display outputs.
S0 to S23: V
LC1, COM0 to COM2: VLC2, COM3: VLC0
3. When the split resistor is incorporated: Low level
When the split resistor is not incorporated : High impedance
4. These pins are provided for future system expansion. Currently, only P30 and P31 are used.
9
Page 10
3.3 Equivalent Circuits for Pins
µ
The equivalent circuits for the
TYPE A TYPE D
PD75P3116’s pins are shown in abbreviated form below.
µ
PD75P3116
VDD
P-ch
IN
N-ch
CMOS standard input buffer
IN
VDD
Data
Output
disable
Push-pull output that can be set to high impedance output
(with both P-ch and N-ch OFF).
TYPE E-BTYPE B
P.U.R.
enable
Data
Type D
Output
disable
P-ch
N-ch
VDD
P.U.R.
P-ch
IN/OUT
OUT
Schmitt trigger input with hysteresis characteristics.
TYPE B-CTYPE F-A
VDD
P.U.R.
P-ch
IN
P.U.R. : Pull-Up Resistor
P.U.R.
enable
Output
disable
Data
Type A
P.U.R. : Pull-Up Resistor
P.U.R.
enable
Type D
Type B
P.U.R. : Pull-Up Resistor
VDD
P.U.R.
P-ch
IN/OUT
(Continued)
10
Page 11
TYPE F-BTYPE H
VDD
P.U.R.
µ
PD75P3116
(Continued)
Output
disable
(P)
Data
Output
disable
Output
disable
(N)
P.U.R. : Pull-Up Resistor
LC0
V
VLC1
SEG
data
V
LC2
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P.U.R.
enable
VDD
P-ch
N-ch
N-chP-ch
N-ch
P-ch
IN/OUT
OUT
Output
disable
TYPE M-CTYPE G-A
SEG
data
Data
Output
disable
Data
Type G-A
Type E-B
P.U.R.
enable
N-ch
P-ch
N-ch
IN/OUT
VDD
P.U.R.
P-ch
IN/OUT
N-ch
TYPE G-BTYPE M-E
LC0
V
VLC1
COM
data
VLC2
P-ch
N-ch
N-ch
P-ch
N-ch
P-ch
N-ch
N-chP-ch
P-chN-ch
Input instruction
OUT
Data
Output
disable
Pull-up resistor that operates only when an input
Note
instruction is executed. (The current flows from
V
P.U.R. : Pull-Up Resistor
N-ch
(+13-V
withstand
Note
Voltage
controller
voltage)
(+13-V
withstand
voltage)
VDD
P-ch
P.U.R.
DD to a pin when the pin is at low level.)
IN/OUT
11
Page 12
3.4 Recommended Connection of Unused Pins
Table 3-1. List of Unused Pin Connection
PinRecommended connection
P00/INT4Connect to Vss or VDD
P01/SCKIndividually connect to Vss or VDD through a resistor.
P02/SO/SB0
P03/SI/SB1Connect to Vss
P10/INT0 and P11/INT1Connect to Vss or V
P12/TI1/TI2/INT2
P13/TI0
P20/PTO0Input status : Individually connect to Vss or V
P21/PTO1through a resistor
P22/PTO2/PCLOutput status : Leave open
P23/BUZ
P30/LCDCL/MD0
P31/SYNC/MD1
P32/MD2
P33/MD3
P50/D4 to P53/D7Connect to Vss
P60/KR0/D0 to P63/KR3/D3Input status :
Output status : Leave open
S0 to S15Leave open
COM0 to COM3
S16/P93 to S19/P90Input status :
S20/P83 to S23/P80Output status : Leave open
V
LC0 to VLC2Connect to Vss
BIASConnect to Vss only when neither of V
VLC2 is used. In other cases, leave open.
Note
XT1
Note
XT2
V
PPAlways connect to VDD directly
Connect to Vss or VDD
Leave open
DD
DD
Individually connect to Vss or VDD through a resistor
Individually connect to Vss or VDD through a resistor
LC0, VLC1 and
µ
PD75P3116
12
Note In case the subsystem clock is not used, set SOS.0 = 1 (on-chip feedback
resistor not used).
Page 13
µ
PD75P3116
4. Mk I AND Mk II MODE SELECTION FUNCTION
Setting a stack bank selection (SBS) register for the µPD75P3116 enables the program memory to be switched between
µ
the Mk I mode and Mk II mode. This function is applicable when using the
753106, or 753108.
When the SBS bit 3 is set to 1 : sets the Mk I mode (supports the Mk I mode for the
When the SBS bit 3 is set to 0 : sets the Mk II mode (supports the Mk II mode for the
4.1 Differences between Mk I Mode and Mk II Mode
Table 4-1 lists differences between the Mk I mode and the Mk II mode for the
Table 4-1. Differences between Mk I Mode and Mk II Mode
ItemMk I modeMk II mode
Program counterPC
Program memory (bytes)16384
Data memory (bits)512 x 4
StackStack bankSelectable via memory banks 0, 1
CALLA !addr1 instruction
InstructionCALL !addr instruction3 machine cycles4 machine cycles
execution time CALLF !faddr instruction2 machine cycles3 machine cycles
Supported mask ROMsWhen set to Mk I mode:When set to Mk II mode:
13-0
µ
PD753104, 753106, and 753108
PD75P3116 to evaluate the µPD753104,
µ
PD753104, 753106, and 753108)
µ
PD753104, 753106, and 753108)
µ
PD75P3116.
µ
PD753104, 753106, and 753108
Caution The Mk II mode supports a program area exceeding 16 Kbytes for the 75X and 75XL Series. Therefore,
this mode is effective for enhancing software compatibility with products that have a program area of
more than 16 Kbytes.
With regard to the number of stack bytes during execution of subroutine call instructions, the usable
area increases by 1 byte per stack compared to the Mk I mode when the Mk II mode is selected.
However, when the CALL !addr and CALLF !faddr instructions are used, the machine cycle becomes
longer by 1 machine cycle. Therefore, if more emphasis is placed on RAM use efficiency and
processing performance than on software compatibility, the Mk I mode should be used.
13
Page 14
µ
PD75P3116
4.2 Setting of Stack Bank Selection (SBS) Register
Use the stack bank selection register to switch between the Mk I mode and Mk II mode. Figure 4-1 shows the format of
the stack bank selection register.
The stack bank selection register is set using a 4-bit memory manipulation instruction. When using the Mk I mode, be
Note
sure to initialize the stack bank selection register to 100XB
Note
be sure to initialize it to 000XB
.
at the beginning of the program. When using the Mk II mode,
Note Set the desired value for X.
Figure 4-1. Format of Stack Bank Selection Register
Address3210
SBS3 SBS2 SBS1 SBS0F84H
Symbol
SBS
Stack area specification
0
0
Memory bank 0
0
1
Memory bank 1
1
0
Setting prohibited
1
1
0Be sure to enter “0” for bit 2.
Mode selection specification
01Mk II mode
Mk I mode
Caution SBS3 is set to “1” after RESET input, and consequently the CPU operates in the Mk I mode. When using
instructions for the Mk II mode, set SBS3 to “0” and set the Mk II mode before using the instructions.
14
Page 15
µ
PD75P3116
5. DIFFERENCES BETWEEN µPD75P3116 AND µPD753104, 753106, 753108
The µPD75P3116 replaces the internal mask ROM in the µPD753104, 753106, and 753108 with a one-time PROM and
features expanded ROM capacity. The µPD75P3116’s Mk I mode supports the Mk I mode in the µPD753104, 753106,
and 753108 and the µPD75P3116’s Mk II mode supports the Mk II mode in the µPD753104, 753106, and 753108.
µ
Table 5-1 lists differences among the
differences among these products before using them with PROMs for debugging or prototype testing of application
systems or, later, when using them with a mask ROM for full-scale production.
For details on the CPU functions and internal hardware, refer to the User’s Manual.
Table 5-1. Differences between
PD75P3116 and the µPD753104, 753106, and 753108. Be sure to check the
µ
PD75P3116 and µPD753104, 753106, and 753108
Item
Program counter12 bits13 bits14 bits
Program memory (bytes)Mask ROMMask ROMMask ROMOne-time PROM
Data memory (x 4 bits)512
Mask optionsPull-up resistor forAvailableNot available
PORT5(On chip/not on chip can be specified.)(Not on chip)
Split resistor for
LCD driving power supply
Wait time afterAvailableNot available
RESET(Selectable between 217/fX and 215/fX)(fixed to 215/fX)
Feedback resistorAvailableNot available
of subsystem clock(Use/not use can be selected.)(Enable)
Pin configuration Pin Nos. 5 to 8P30 to P33
Pin Nos. 10 to 13P50 to P53P50/D4 to P53/D7
Pin Nos. 14 to 17P60/KR0 to P63/KR3
Pin No. 21ICVPP
OtherNoise resistance and noise radiation may differ due to the different circuit sizes and mask
µ
PD753104
40966144819216384
layouts.
µ
PD753106
µ
PD753108
µ
P30/MD0 to P33/MD3
P60/KR0/D0 to P63/KR3/D3
PD75P3116
Note217/fX : 21.8 ms at 6.0-MHz operation, 31.3 ms at 4.19-MHz operation
215/fX : 5.46 ms at 6.0-MHz operation, 7.81 ms at 4.19-MHz operation
Note
Caution Noise resistance and noise radiation are different in PROM and mask ROMs. When changing from
PROM versions to mask ROM versions when switching from prototype development to full production,
be sure to fully evaluate the mask ROM version’s CS (not ES).
Remark For instructions other than those noted above, the BR PCDE and BR PCXA instructions can be used to branch
to addresses with changes in the PC’s lower 8 bits only.
16
Page 17
Figure 6-2. Data Memory Map
µ
PD75P3116
Data area
static RAM
(512 x 4)
Stack area
Note
Display data memory
General-purpose register area
000H
01FH
020H
0FFH
100H
1DFH
1E0H
1F7H
1F8H
1FFH
Data memory
(32 x 4)
256 x 4
(224 x 4)
256 x 4
(224 x 4)
(24 x 4)
(8 x 4)
Not incorporated
Memory bank
0
1
F80H
Peripheral hardware area
FFFH
NoteMemory bank 0 or 1 can be selected as the stack area.
128 x 4
15
17
Page 18
µ
PD75P3116
7. INSTRUCTION SET
(1) Representation and coding formats for operands
In the instruction’s operand area, use the following coding format to describe operands corresponding to the instruction’s
operand representations (for further description, refer to the RA75X Assembler Package User’s Manual Language(EEU-1363)). When there are several codes, select and use just one. Codes that consist of upper-case letters and + or
– symbols are key words that should be entered as they are.
For immediate data, enter an appropriate numerical value or label.
Enter register flag symbols as label descriptors instead of mem, fmem, pmem, bit, etc. (for further description, refer to the
User’s Manual). The number of labels that can be entered for fmem and pmem are restricted.
RepresentationCoding format
regX, A, B, C, D, E, H, L
reg1X, B, C, D, E, H, L
rpXA, BC, DE, HL
rp1BC, DE, HL
rp2BC, DE
rp’XA, BC, DE, HL, XA’, BC’, DE’, HL’
rp’1BC, DE, HL, XA’, BC’, DE’, HL’
rpaHL, HL+, HL–, DE, DL
rpa1DE, DL
n44-bit immediate data or label
n88-bit immediate data or label
mem8-bit immediate data or label
bit2-bit immediate data or label
fmemFB0H to FBFH, FF0H to FFFH immediate data or label
pmemFC0H to FFFH immediate data or label
addr0000H to 3FFFH immediate data or label
addr10000H to 3FFFH immediate data or label (Mk II mode only)
caddr12-bit immediate data or label
faddr11-bit immediate data or label
taddr20H to 7FH immediate data (however, bit0 = 0) or label
PORTnPORT0 to PORT3, PORT5, PORT6, PORT8, PORT9
IEXXXIEBT, IECSI, IET0 to IET2, IE0 to IE2, IE4, IEW
RBnRB0 to RB3
MBnMB0, MB1, MB15
Note
18
Note When processing 8-bit data, only even-numbered addresses can be specified.
Page 19
(2) Operation legend
A: A register; 4-bit accumulator
B: B register
C: C register
D: D register
E: E register
H: H register
L: L register
X: X register
XA: Register pair (XA); 8-bit accumulator
BC: Register pair (BC)
DE: Register pair (DE)
HL: Register pair (HL)
XA’: Expansion register pair (XA’)
BC’: Expansion register pair (BC’)
DE’: Expansion register pair (DE’)
HL’: Expansion register pair (HL’)
PC: Program counter
SP: Stack pointer
CY: Carry flag; bit accumulator
PSW: Program status word
MBE: Memory bank enable flag
RBE: Register bank enable flag
PORTn : Port n (n = 0 to 3, 5, 6, 8, 9)
IME: Interrupt master enable flag
IPS: Interrupt priority selection register
IEXXX : Interrupt enable flag
RBS: Register bank selection register
MBS: Memory bank selection register
PCC: Processor clock control register
.: Delimiter for address and bit
(XX): Addressed data with xx
XXH: Hexadecimal data
µ
PD75P3116
19
Page 20
(3) Description of symbols used in addressing area
MB = MBE • MBS
*1
MB = 0
*2
MBE = 0 :
*3
MBE = 1 :
MB = 15, fmem = FB0H to FBFH, FF0H to FFFH
*4
MB = 15, pmem = FC0H to FFFH
*5
addr = 0000H to 3FFFH
*6
addr, addr1 =*7(Current PC) –15 to (Current PC) –1
caddr =0000H to 0FFFH (PC
*8
MBS = 0, 1, 15
MB = 0 (000H to 07FH)
MB = 15 (F80H to FFFH)
MB = MBS
MBS = 0, 1, 15
(Current PC) +2 to (Current PC) +16
13,12
= 00B) or
1000H to 1FFFH (PC
2000H to 2FFFH (PC
3000H to 3FFFH (PC
3. In areas *4 and *5, MB = 15 for both MBE and MBS.
4. Areas *6 to *11 indicate corresponding address-enabled areas.
(4) Description of machine cycles
S indicates the number of machine cycles required for skipping of skip-specified instructions. The value of S varies as
shown below.
• No skip .....................................................................S = 0
• Skipped instruction is 1-byte or 2-byte instruction....S = 1
Note
• Skipped instruction is 3-byte instruction
..............S = 2
Note 3-byte instructions: BR !addr, BRA !addr1, CALL !addr, and CALLA !addr1
Caution The GETI instruction is skipped for one machine cycle.
One machine cycle equals one cycle (= t
20
CY) of the CPU clock Φ. Use the PCC setting to select among four cycle times.
Page 21
µ
PD75P3116
InstructionMnemonicOperand
group
TransferMOVA, #n411A<-n4String-effect A
reg1, #n422reg1<-n4
XA, #n822XA<-n8String-effect A
HL, #n822HL<-n8String-effect B
rp2, #n822rp2<-n8
A, @HL11A<-(HL)*1
A, @HL+12+S A<-(HL), then L<-L+1*1L=0
A, @HL–12+S A<-(HL), then L<-L–1*1L=FH
A, @rpa111A<-(rpa1)*2
XA, @HL22XA<-(HL)*1
@HL, A11(HL)<-A*1
@HL, XA22(HL)<-XA*1
A, mem22A<-(mem)*3
XA, mem22XA<-(mem)*3
mem, A22(mem)<-A*3
mem, XA22(mem)<-XA*3
A, reg22A<-reg
XA, rp’22XA<-rp’
reg1, A22reg1<-A
rp’1, XA22rp’1<-XA
XCHA, @HL11A<->(HL)*1
A, @HL+12+S A<->(HL), then L<-L+1*1L=0
A, @HL–12+S A<->(HL), then L<-L–1*1L=FH
A, @rpa111A<->(rpa1)*2
XA, @HL22XA<->(HL)*1
A, mem22A<->(mem)*3
XA, mem22XA<->(mem)*3
A, reg111A<->reg1
TBR or TCALLreferenced
Execute (taddr)(taddr+1) instructionsinstruction
Operation
(n=0 to 3, 5, 6, 8, 9)
(n=2 to 3, 5, 6, 8, 9)
SP<-SP–6
Addressing
- - - - - - - - - - - -
- - - - - - - - - - - -
- - - - - - - - - - - -
- - - - - - - - - - - -
Skip
condition
Notes 1. Setting MBE=0 or MBE=1, MBS=15 is required during the execution of IN or OUT instruction.
2. TBR and TCALL instructions are assembler pseudo-instructions for the GETI instruction table definitions.
3. The portion in a double box can be supported only in the Mk II mode. Other portions can be supported only
in the Mk I mode.
26
Page 27
µ
PD75P3116
8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY
The program memory contained in the µPD75P3116 is a 16384 x 8-bit one-time PROM that can be electrically written one
time only. The pins listed in the table below are used for this PROM’s write/verify operations. Clock input from the X1
pin is used instead of address input as a method for updating addresses.
PinFunction
VPPPin where program voltage is applied during program memory
X1, X2Clock input pins for address updating during program memory
MD0 to MD3Operation mode selection pin for program memory write/verify
D0/P60 to D3/P638-bit data I/O pins for program memory write/verify
(lower 4 bits)
D4/P50 to D7/P53
(upper 4 bits)
VDDPin where power supply voltage is applied. Applies 1.8 to 5.5
Caution Pins not used for program memory write/verify should be connected to Vss.
write/verify (usually VDD potential)
write/verify. Input the X1 pin’s inverted signal to the X2 pin.
V in normal operation mode and +6 V for program memory
write/verify.
8.1 Operation Modes for Program Memory Write/Verify
When +6 V is applied to the V
DD pin and +12.5 V to the VPP pin, the
µ
PD75P3116 enters the program memory write/verify
mode. The following operation modes can be specified by setting pins MD0 to MD3 as shown below.
Program memory can be written at high speed using the following procedure.
(1) Pull down unused pins to Vss through resistors. Set the X1 pin low.
(2) Supply 5 V to the V
DD and VPP pins.
(3) Wait 10 µs.
(4) Select the program memory address zero-clear mode.
(5) Supply 6 V to V
DD and 12.5 V to VPP pins.
(6) Write data in the 1-ms write mode.
(7) Select the verify mode. If the data is written, go to (8) and if not, repeat (6) and (7).
(8) Additional write. (X: number of write operations from (6) and (7)) x 1 ms
(9) Apply four pulses to the X1 pin to increment the program memory address by one.
(10) Repeat (6) to (9) until the end address is reached.
(11) Select the program memory address zero-clear mode.
(12) Return the V
DD- and VPP-pin voltages to 5 V.
(13) Turn off the power.
The following figure shows steps (2) to (9).
µ
PD75P3116
V
V
PP
V
DD
D0/P60 to D3/P63
D4/P50 to D7/P53
MD1/P31
MD2/P32
V
VDD + 1
V
X1
MD0/P30
PP
DD
DD
X repetitions
WriteVerify
Data input
Data
output
Additional
write
Data input
Address
increment
28
MD3/P33
Page 29
µ
PD75P3116
8.3 Program Memory Read Procedure
The µPD75P3116 can read program memory contents using the following procedure.
(1) Pull down unused pins to V
SS through resistors. Set the X1 pin low.
(2) Supply 5 V to the VDD and VPP pins.
(3) Wait 10 µs.
(4) Select the program memory address zero-clear mode.
(5) Supply 6 V to the V
DD and 12.5 to the VPP pins.
(6) Select the verify mode. Apply four pulses to the X1 pin. Every four clock pulses will output the data stored in one
address.
(7) Select the program memory address zero-clear mode.
(8) Return the V
DD- and VPP-pin voltages to 5V.
(9) Turn off the power.
The following figure shows steps (2) to (7).
V
V
PP
PP
V
DD
VDD + 1
V
DD
D0/P60 to D3/P63
D4/P50 to D7/P53
DD
V
X1
MD0/P30
MD1/P31
MD2/P32
MD3/P33
Data outputData output
“L”
29
Page 30
µ
PD75P3116
8.4 One-time PROM Screening
Due to its structure, the one-time PROM cannot be fully tested before shipment by NEC. Therefore, NEC recommends
that after the required data is written and the PROM is stored under the temperature and time conditions shown below,
the PROM should be verified via a screening.
Storage temperatureStorage time
125˚C24 hours
NEC offers QTOP microcontrollers for which one-time PROM writing, marking, screening, and verification are provided
at additional cost. For more detailed information, contact an NEC sales representative.
30
Page 31
µ
PD75P3116
9. ELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS (TA = 25˚C)
ParameterSymbolTest ConditionsRatingUnit
Power supply voltageV
PROM power supplyVPP–0.3 to +13.5V
voltage
Input voltageVI1Except port 5–0.3 to VDD +0.3V
Output voltageVO–0.3 to VDD +0.3V
Output current highI
Output current lowIOLPer pin30mA
Operating ambientTA–40 to +85
temperature
Storage temperatureT
DD–0.3 to +7.0V
VI2Port 5 (N-ch open drain)–0.3 to +14V
OHPer pin–10mA
Total of all pins–30mA
Total of all pins220mA
Note
stg–65 to +150˚C
˚C
Note When LCD is driven in normal mode: TA = –10 to +85˚C
Caution If any of the parameters exceeds the absolute maximum ratings, even momentarily, the reliability
of the product may be impaired. The absolute maximum ratings are values that may physically
damage the products. Be sure to use the products within the ratings.
CAPACITANCE (T
ParameterSymbolTest ConditionsMIN.TYP.MAX.Unit
Input capacitanceCINf = 1 MHz15pF
Output capacitanceCOUTUnmeasured pins returned to 0 V.15pF
I/O capacitanceCIO15pF
A = 25˚C, VDD = 0 V)
31
Page 32
µ
PD75P3116
MAIN SYSTEM CLOCK OSCILLATOR CHARACTERISTICS (TA = –40 to +85°C, VDD = 1.8 to 5.5 V)
ResonatorRecommended constantParameterTest conditionsMIN.TYP. MAX. Unit
Note 2
CeramicOscillation1.0
X1
resonatorfrequency (fx)
C1
CrystalOscillation1.0
X1
resonatorfrequency (fx)
C1
X2
Note 1
C2
V
DD
X2
C2
DD
V
OscillationAfter VDD reaches oscil-4ms
Note 1
Note 3
lation voltage range MIN.
stabilization time
OscillationVDD = 4.5 to 5.5 V10ms
stabilization time
Notes 1. The oscillation frequency and X1 input frequency indicate characteristics of the oscillator only. For
the instruction execution time, refer to AC Characteristics.
2. When the power supply voltage is 1.8 V ≤ V
DD < 2.7 V and the oscillation frequency is 4.19 MHz < fx
≤ 6.0 MHz, setting the processor clock control register (PCC) to 0011 results in 1 machine cycle being
less than the required 0.95 µs. Therefore, set PCC to a value other than 0011.
3. The oscillation stabilization time is necessary for oscillation to stabilize after applying V
DD or releasing
the STOP mode.
Caution When using the main system clock oscillator, wiring in the area enclosed with the dotted line should
be carried out as follows to avoid an adverse effect from wiring capacitance.
• Wiring should be as short as possible.
• Wiring should not cross other signal lines.
• Wiring should not be placed close to a varying high current.
• The potential of the oscillator capacitor ground should be the same as V
DD.
• Do not ground to a ground pattern in which a high current flows.
• Do not fetch a signal from the oscillator.
32
Page 33
µ
PD75P3116
SUBSYSTEM CLOCK OSCILLATOR CHARACTERISTICS (TA = –40 to +85˚C, VDD = 1.8 to 5.5 V)
ResonatorRecommended constantParameterTest conditionsMIN.TYP. MAX. Unit
CrystalOscillation3232.76835kHz
XT1
resonatorfrequency (f
C3
XT2
R
C4
DD
V
OscillationVDD = 4.5 to 5.5 V1.02s
stabilization time
XT)
Note 1
Note 2
10
ExternalXT1 input frequency32100kHz
clock(f
XT1
XT2
Note 1
XT)
XT1 input high-/low-level
515µs
width (tXTH, tXTL)
Notes 1. Indicates only oscillator characteristics. Refer to AC Characteristics for instruction execution time.
2. The oscillation stabilization time is necessary for oscillation to stabilize after applying V
DD.
Caution When using the subsystem clock oscillator, wiring in the area enclosed with the dotted line should
be carried out as follows to avoid an adverse effect from wiring capacitance.
• Wiring should be as short as possible.
• Wiring should not cross other signal lines.
• Wiring should not be placed close to a varying high current.
• The potential of the oscillator capacitor ground should be the same as V
DD.
• Do not ground to a ground pattern in which a high current flows.
• Do not fetch a signal from the oscillator.
The subsystem clock oscillator is designed as a low amplification circuit to provide low consumption
current, and is more liable to misoperation by noise than the main system clock oscillation circuit.
Special care should therefore be taken regarding the wiring method when the subsystem clock is
used.
33
Page 34
DC CHARACTERISTICS (TA = –40 to +85˚C, VDD = 1.8 to 5.5 V)
ParameterSymbolTest conditionsMIN. TYP. MAX. Unit
µ
PD75P3116
Output current lowI
OLPer pin15mA
Total of all pins150mA
Input voltage highVIH1Ports 2, 3, 8, and 92.7 ≤ VDD≤ 5.5 V 0.7VDDVDDV
VDD = 5.0 V ± 10%
VDD = 3.0 V ± 10%
HALT modeVDD = 5.0 V ± 10%0.72.0mA
Note 5
Note 6
3.29.5mA
0.551.6mA
VDD = 3.0 V ± 10%0.250.8mA
IDD14.19 MHz
Crystal oscillation
IDD2
C1 = C2 = 22 pF
Note 4
VDD = 5.0 V ± 10%
VDD = 3.0 V ± 10%
HALT modeVDD = 5.0 V ± 10%0.651.8mA
Note 5
Note 6
2.57.5mA
0.451.35mA
VDD = 3.0 V ± 10%0.220.7mA
IDD332.768 kHz
Crystal oscillation
IDD4HALT mode
Note 7
Low-voltageVDD = 3.0 V ± 10%45130
Note 8
mode
VDD = 2.0 V ± 10%2055
VDD = 3.0 V, TA = 25˚C
Low power
consumption
Note 9
mode
VDD = 3.0 V ± 10%42120
VDD = 3.0 V, TA = 25˚C
Low-
voltage
VDD = 3.0 V ± 10%
VDD = 2.0 V ± 10%
4590
4285
5.518
2.27
mode
IDD5XT1 = 0 V
Note 8
Low
power
consumption mode
Note 10
VDD = 5.0 V ± 10%0.0510
Note 9
VDD = 3.0 V, TA = 25˚C
VDD = 3.0 V ± 10%
VDD = 3.0 V,
TA = 25˚C
5.512
4.012
4.08
STOP modeVDD = 3.0 V0.025
± 10%TA = 25˚C0.023
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
Notes 1. Set to VAC0 = 0 when the low power consumption mode and the stop mode are used. If VAC0 = 1
is set, the current increases for approx. 1 µA.
2. The voltage deviation is the difference from the output voltage corresponding to the ideal value of the
segment and common outputs (VLCDn; n = 0, 1, 2).
3. Not including currents flowing in on-chip pull-up resistors.
4. Including oscillation of the subsystem clock.
5. When the processor clock control register (PCC) is set to 0011 and the device is operated in the high-
speed mode.
6. When PCC is set to 0000 and the device is operated in the low-speed mode.
7. When the system clock control register (SCC) is set to 1001 and the device is operated on the
subsystem clock, with main system clock oscillation stopped.
8. When the sub-oscillation circuit control register (SOS) is set to 0000.
9. When SOS is set to 0010.
10. When SOS is set to 00×1 and the feedback resistor of the sub-oscillation circuit is not used.
35
Page 36
AC CHARACTERISTICS (TA = –40 to +85˚C, VDD = 1.8 to 5.5 V)
execution time) of the CPU clock
(Φ) is determined by the oscillation
frequency of the connected
CYOperating onVDD = 2.7 to 5.5 V0.6764
main system clock0.9564
Operating on subsystem clock114122125
TIH, tTILVDD = 2.7 to 5.5 V0.48
tINTH, tINTL
INT0IM02 = 0Note 2
INT1, 2, 410
KR0 to KR710
t
CY vs VDD
(At main system clock operation)
64
60
resonator (and external clock), the
system clock control register (SCC)
and the processor clock control
register (PCC). The figure at the
right indicates the cycle time t
CY
6
5
4
3
Guaranteed Operation
Range
versus supply voltage VDD
characteristic with the main system
clock operating.
CY or 128/fx is set by setting the
2. 2t
2
Cycle Time tCY [µs]
interrupt mode register (IM0).
1
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
36
0.5
1023456
Supply Voltage VDD [V]
Page 37
µ
PD75P3116
SERIAL TRANSFER OPERATION
2-Wire and 3-Wire Serial I/O Mode (SCK...Internal clock output): (TA = –40 to +85˚C, VDD = 1.8 to 5.5 V)
ParameterSymbolTest conditionsMIN.TYP. MAX.Unit
SCK cycle timetKCY1VDD = 2.7 to 5.5 V1300ns
3800ns
SCK high-/low-levelt
KL1, tKH1 VDD = 2.7 to 5.5 V
width
Note 1
SI
setup timetSIK1VDD = 2.7 to 5.5 V150ns
tKCY1/2–50
tKCY1/2–150
(to SCK↑)500ns
Note 1
SI
hold timetKSI1VDD = 2.7 to 5.5 V400ns
(from SCK↑)600ns
Note 1
SCK↓→SO
delay timeCL = 100 pF
outputtKSO1RL = 1 kΩ,VDD = 2.7 to 5.5 V0250ns
Note 2
01000ns
Notes 1. In 2-wire serial I/O mode, read this parameter as SB0 or SB1 instead.
L and CL are the load resistance and load capacitance of the SO output lines, respectively.
2. R
2-Wire and 3-Wire Serial I/O Mode (SCK...External clock input): (T
ParameterSymbolTest conditionsMIN.TYP. MAX.Unit
SCK cycle timetKCY2VDD = 2.7 to 5.5 V800ns
SCK high-/low-leveltKL2,tKH2VDD = 2.7 to 5.5 V400ns
width1600ns
Note 1
setup timetSIK2VDD = 2.7 to 5.5 V100ns
SI
(to SCK↑)150ns
Note 1
SI
hold timetKSI2VDD = 2.7 to 5.5 V400ns
(from SCK↑)600ns
Note 1
SCK↓→SO
delay timeCL = 100 pF
outputtKSO2RL = 1 kΩ,VDD = 2.7 to 5.5 V0300ns
Note 2
A = –40 to +85˚C, VDD = 1.8 to 5.5 V)
3200ns
01000ns
ns
ns
Notes 1. In 2-wire serial I/O mode, read this parameter as SB0 or SB1 instead.
L and CL are the load resistance and load capacitance of the SO output lines, respectively.
2. R
37
Page 38
SBI Mode (SCK...Internal clock output (master)): (TA = –40 to +85˚C, VDD = 1.8 to 5.5 V)
ParameterSymbolTest conditionsMIN.TYP. MAX.Unit
µ
PD75P3116
SCK cycle timet
KCY3VDD = 2.7 to 5.5 V1300ns
3800ns
SCK high-/low-leveltKL3,tKH3VDD = 2.7 to 5.5 V
width
tKCY3/2–50
tKCY3/2–150
ns
ns
SB0, 1 setup timetSIK3VDD = 2.7 to 5.5 V150ns
(to SCK↑)500ns
SB0, 1 hold time (from SCK↑)
MD3 setup time (to MD1↑)tM3S–2
MD3 hold time (from MD1↓)tM3H–2
MD3 setup time (to MD0↓)tM3SR–
Address
Address
Note 2
→data output delay time
Note 2
→data output hold time
tDADtACC
tHADtOH
MD3 hold time (from MD0↑)tM3HR–
MD3↓→data output float delay timet
DFR–
During program memory read
2
During program memory read
During program memory read
During program memory read
0130ns
2
During program memory read
2
2
Notes 1.Corresponding symbol of µPD27C256A
2.The internal address signal is incremented by 1 at the rising edge of the fourth X1 input and is not
connected to a pin.
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
44
Page 45
Program Memory Write Timing
t
VPS
V
PP
V
PP
V
DD
t
VDS
VDD+1
V
DD
V
DD
X1
D0/P60 to D3/P60
D4/P50 to D7/P53
MD0/P30
MD1/P31
MD2/P32
MD3/P33
t
I
t
PCR
t
M3S
Data input
t
DS
t
t
M1S
µ
PD75P3116
t
XH
t
Data output
t
DH
PW
t
M1H
t
DVtDF
t
M1R
t
M0S
Data input
t
DS
t
OPW
XL
t
DH
t
AH
t
AS
Data input
t
M3H
Program Memory Read Timing
tVPS
VPP
VPP
VDD
VDD+1
VDD
VDD
X1
D0/P60 to D3/P60
D4/P50 to D7/P53
tI
MD0/P30
MD1/P31
tPCR
MD2/P32
tVDS
tXH
tXL
tHAD
tDAD
Data outputData output
tDV
tM3HR
tDFR
MD3/P33
tM3SR
45
Page 46
10. CHARACTERISTIC CURVES (REFERENCE VALUES)
I
DD
vs VDD(Main System Clock: 6.0-MHz Crystal Resonator)
10
5.0
1.0
0.5
µ
PD75P3116
(T
A
= 25°C)
PCC = 0011
PCC = 0010
PCC = 0001
PCC = 0000
Main system clock
HALT mode + 32-kHz oscillation
(mA)
DD
0.1
Supply Current I
0.05
0.01
0.005
Subsystem clock operation
mode (SOS.1 = 0)
Main system clock STOP
mode + 32-kHz oscillation
(SOS.1 = 0) and
subsystem clock HALT mode
(SOS.1 = 0)
Main system clock STOP
mode + 32-kHz oscillation
(SOS.1 = 1) and subsystem
clock HALT mode (SOS.1 = 1)
XT1XT2X1X2
Crystal resonator
6.0 MHz
Crystal resonator
32.768 kHz
330 kΩ
22 pF22 pF22 pF22 pF
46
V
V
0.001
012345678
DD
Supply Voltage V
(V)
DD
DD
Page 47
10
5.0
1.0
0.5
IDD vs VDD (Main System Clock: 4.19-MHz Crystal Resonator)
PCC = 0011
PCC = 0010
PCC = 0001
PCC = 0000
Main system clock
HALT mode + 32-kHz oscillation
µ
PD75P3116
(T
A = 25°C)
0.1
Supply Current IDD (mA)
0.05
0.01
0.005
22 pF22 pF22 pF22 pF
0.001
012345678
Supply Voltage VDD (V)
Subsystem clock operation
mode (SOS.1 = 0)
Subsystem clock HALT mode
(SOS.1 = 0) and
main system clock STOP mode
+ 32-kHz oscillation (SOS.1 = 0)
Main system clock STOP
mode + 32-kHz oscillation
(SOS.1 = 1)
and subsystem
mode (SOS.1 = 1)
Crystal resonator
4.19 MHz
XT1XT2X1X2
clock HALT
Crystal resonator
32.768 kHz
VDDVDD
330 kΩ
47
Page 48
11. PACKAGE DRAWINGS
64 PIN PLASTIC QFP ( 14)
µ
PD75P3116
A
B
48
49
64
F
1
G
H
M
I
P
N
NOTE
Each lead centerline is located within 0.15
mm (0.006 inch) of its true position (T.P.) at
maximum material condition.
33
32
detail of lead end
C
D
S
Q
17
16
J
K
M
L
ITEMMILLIMETERSINCHES
A
B
C
D
F
G
H
I
J
K
L
M
N
17.6±0.4
14.0±0.2
14.0±0.2
17.6±0.4
1.0
1.0
0.35±0.10
0.15
0.8 (T.P.)
1.8±0.2
0.8±0.2
+0.10
0.15
–0.05
0.10
P2.550.100
Q
0.1±0.1
S2.85 MAX.0.112 MAX.
5°±5°
P64GC-80-AB8-3
0.693±0.016
+0.009
0.551
–0.008
+0.009
0.551
–0.008
0.693±0.016
0.039
0.039
+0.004
0.014
–0.005
0.006
0.031 (T.P.)
0.071±0.008
+0.009
0.031
–0.008
+0.004
0.006
–0.003
0.004
0.004±0.004
48
Page 49
64 PIN PLASTIC LQFP ( 12)
µ
PD75P3116
A
B
48
49
33
32
C
64
F
1
G
HIJ
M
P
16
17
K
M
N
NOTE
Each lead centerline is located within 0.13 mm (0.005 inch) of
its true position (T.P.) at maximum material condition.
L
detail of lead end
S
D
Q
ITEM MILLIMETERSINCHES
A14.8±0.40.583±0.016
B12.0±0.20.472
C12.0±0.20.472
D
14.8±0.4
F
1.125
G
1.125
H0.30±0.100.012
I
0.13
J
0.65 (T.P.)
K
1.4±0.2
L0.6±0.20.024
M0.150.006
N0.10
P1.40.055
Q
0.125±0.075 0.005±0.003
R
5°±5°
S
1.7 MAX.
R
+0.009
+0.004
+0.008
+0.10
–0.05
–0.008
+0.009
–0.008
0.583±0.016
0.044
0.044
–0.005
0.005
0.026 (T.P.)
0.055±0.008
–0.009
+0.004
–0.003
0.004
5°±5°
0.067 MAX.
P64GK-65-8A8-1
49
Page 50
µ
PD75P3116
12. RECOMMENDED SOLDERING CONDITIONS
The µPD75P3116 should be soldered and mounted under the conditions recommended in the table below.
For details of recommended soldering conditions, refer to the information document Semiconductor Device
Mounting Technology Manual (C10535E).
For soldering methods and conditions other than those recommended below, contact an NEC Sales representative.
Table 12-1. Surface Mounting Type Soldering Conditions
µ
PD75P3116GC-AB8: 64-pin plastic QFP (14 x 14 mm, 0.8-mm pitch)
(1)
Soldering
Method
InfraredPackage peak temperature: 235° C, Time: 30 seconds max. (at 210°C min.),IR35-00-3
reflowNumber of times: Three times max.
Time: 30 seconds max. (at 210˚C min.),
Number of times: Twice max., Number of days: 7
necessary at 125°C for 10 hours)
<Precaution>
Products other than those supplied in thermal-resistant tray (magazine, taping,
and non-thermal-resistant tray) cannot be baked in their packs.
VPSPackage peak temperature: 215° C,VP15-107-2
Time: 40 seconds max. (at 200°C min.),
Number of times: Twice max., Number of days: 7
necessary at 125°C for 10 hours)
<Precaution>
Products other than those supplied in thermal-resistant tray (magazine, taping,
and non-thermal-resistant tray) cannot be baked in their packs.
cut flag (SOS.0)
Sub-oscillation circuitNoneContained
current cut flag (SOS.1)
Register bank selection register (RBS)NoneYes
Standby release by INT0NoYes
Vectored interruptExternal: 3, Internal: 3External: 3, Internal: 5
Supply voltageV
Operating ambient temperatureT
Package• 80-pin plastic QFP• 84-pin plastic QFP (14 x 14 mm, 0.8-mm pitch)
µ
PD75308B
(Main system clock:(Main system clock: during 4.19-MHz operation)
during 4.19-MHz• Φ, 750, 375, 93.8 kHz
operation)(Main system clock: during 6.0-MHz operation)
(Main system clock:(Main system clock: during 4.19-MHz operation or
during 4.19-MHz operation)subsystem clock: during 32.768-kHz operation)
• 3-wire serial I/O mode ··· MSB/LSB can be selected for transfer first bit
• 2-wire serial I/O mode
• SBI mode
DD = 2.0 to 6.0 VVDD = 1.8 to 5.5 V
A = –40 to +85°C
(14 x 20 mm)• 64-pin plastic QFP (12 x 12 mm, 0.65-mm pitch)
• 80-pin plastic QFP
(14 x 14 mm)
• 80-pin plastic TQFP
(Fine pitch) (12 x 12 mm)
µ
PD753108
• 2.93, 5.86, 46.9 kHz
(Main system clock: 6.0-MHz operation)
µ
PD75P3116
52
Page 53
µ
PD75P3116
APPENDIX B. DEVELOPMENT TOOLS
The following development tools have been provided for system development using the µPD75P3116.
In the 75XL series, a common relocatable assembler is used in combination with a device file dedicated to each model.
IBM PC/ATRefer to OS for3.5" 2HC
or compatiblesIBM PCs5" 2HC
TM
Refer to OS for3.5" 2HC
OSSupply medium
TM
Ver.3.30 to5" 2HD
Note
Ver.6.2
Ver.3.30 to5" 2HD
Note
Ver.6.2
3.5" 2HD
µ
S5A13RA75X
µ
S5A10RA75X
µ
S7B13RA75X
µ
S7B10RA75X
µ
S5A13DF753108
µ
S5A10DF753108
µ
S7B13DF753108
µ
S7B10DF753108
Note Ver. 5.00 and later include a task swapping function, but this function cannot be used in this software.
Remark Operation of the assembler and device file is guaranteed only when using the host machine and OS described
above.
53
Page 54
µ
PD75P3116
PROM Write Tools
HardwarePG-1500This is a PROM writer that can program single-chip microcontroller with PROM in stand-alone
mode or under control of host machine when connected with supplied accessory board and
optional programmer adapter.
It can also program typical PROMs in capacities ranging from 256 K to 4 M bits.
PA-75P3116BGCThis is a PROM programmer adapter for the µPD75P3116GC.
It can be used when connected to a PG-1500.
PA-75P3116BGKThis is a PROM programmer adapter for the
It can be used when connected to a PG-1500.
SoftwarePG-1500 controllerConnects PG-1500 to host machine with serial and parallel interface and controls PG-1500 on
host machine.
Host machinePart No. (name)
OSSupply medium
PC-9800 SeriesMS-DOS3.5" 2HD
Ver.3.30 to5" 2HD
Note
Ver.6.2
IBM PC/ATRefer to OS for3.5" 2HD
or compatibleIBM PCs5" 2HC
µ
PD75P3116GK.
µ
S5A13PG1500
µ
S5A10PG1500
µ
S7B13PG1500
µ
S7B10PG1500
Note Ver. 5.00 and later include a task swapping function, but this function cannot be used in this software.
Remark Operation of the PG-1500 controller is guaranteed only when using the host machine and OS described above.
54
Page 55
µ
PD75P3116
Debugging Tools
In-circuit emulators (IE-75000-R and IE-75001-R) are provided as program debugging tools for the µPD75P3116.
Various system configurations using these in-circuit emulators are listed below.
HardwareIE-75000-R
IE-75001-RThe IE-75001-R is an in-circuit emulator to be used for hardware and software debugging during
IE-75300-R-EMThis is an emulation board for evaluating application systems using the
EP-753108GC-RThis is an emulation probe for the
EP-753108GK-RThis is an emulation probe for the
SoftwareIE control programThis program can control the IE-75000-R or IE-75001-R on a host machine when connected to
Note 1
EV-9200GC-64 It includes a 64-pin conversion socket (EV-9200GC-64) to facilitate connections
TGK-064SBWIt includes a 64-pin conversion adapter (TGK-064SBW) to facilitate connections with target
Note 2
The IE-75000-R is an in-circuit emulator to be used for hardware and software debugging during
development of application systems using the 75X or 75XL Series products.
For development of the µPD753108 Subseries, the IE-75000-R is used with optional emulation
board (IE-75300-R-EM) and emulation probe (EP-753108GC-R or EP-753108GK-R).
Highly efficient debugging can be performed when connected to host machine and PROM
programmer.
The IE-75000-R includes a connected emulation board (IE-75000-R-EM).
development of application systems using the 75X or 75XL Series products.
The IE-75001-R is used in combination with optional emulation board (IE-75300-R-EM) and
emulation probe (EP-753108GC-R or EP-753108GK-R).
Highly efficient debugging can be performed when connected to host machine and PROM
programmer.
µ
PD75P3116.
It is used in combination with the IE-75000-R or IE-75001-R.
µ
PD75P3116GC.
When being used, it is connected with the IE-75000-R or IE-75001-R and the IE-75300-R-EM.
with target system.
µ
PD75P3116GK.
When being used, it is connected with the IE-75000-R or IE-75001-R and the IE-75300-R-EM.
system.
the IE-75000-R or IE-75001-R via an RS-232C or Centronics interface.
Host machinePart No. (name)
OSSupply medium
PC-9800 SeriesMS-DOS3.5" 2HD
Ver.3.30 to5" 2HD
Note 3
Ver.6.2
IBM PC/ATRefer to OS for3.5" 2HC
or compatibleIBM PCs5" 2HC
µ
S5A13IE75X
µ
S5A10IE75X
µ
S7B13IE75X
µ
S7B10IE75X
Notes 1. This is a maintenance product.
2. Made by TOKYO ELETECH Corporation (Tokyo, 03-5295-1661).
Contact to an NEC sales representative for detailed information.
3. Ver. 5.00 and later include a task swapping function, but this function cannot be used in this software.
Remarks 1. Operation of the IE control program is guaranteed only when using the host machine and OS
described above.
µ
2. The
PD753104, 753106, 753108, and 75P3116 are generically called the µPD753108 Subseries.
55
Page 56
µ
PD75P3116
OS for IBM PCs
The following operating systems for the IBM PC are supported.
OSVersion
PC DOS
TM
Ver.3.1 to 6.3, J6.1/V
MS-DOSVer.5.0 to 6.2
Note
IBM DOS
5.0/V
TM
J5.02/V
to 6.2/V
Note
Note Only English mode is supported.
Caution Ver. 5.0 and later include a task swapping function, but this function cannot be used in this software.
Note
Note
to J6.3/V
Note
56
Page 57
µ
PD75P3116
APPENDIX C. RELATED DOCUMENTS
The related documents indicated in this publication may include preliminary versions. However, preliminary
versions are not marked as such.
Device Related Documents
Document Name
µ
PD753104, 753106, and 753108 Data SheetU10086EU10086J
IC Package ManualC10943X
Semiconductor Device Mounting Technology ManualC10535EC10535J
Quality Grades on NEC Semiconductor DevicesC11531EC11531J
NEC Semiconductor Device Reliability/Quality Control SystemC10983EC10983J
Electrostatic Discharge (ESD) Test–MEM-539
Guide to Quality Assurance for Semiconductor DevicesMEI-1202C11893J
Microcontroller-related Product Guide Third Party’s Product–U11416J
Caution The above related documents are subject to change without notice. For design purposes, etc.,
be sure to use the latest versions.
Document No.
EnglishJapanese
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NOTES FOR CMOS DEVICES
1PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note: Strong electric field, when exposed to a MOS device, can cause destruction of
the gate oxide and ultimately degrade the device operation. Steps must be taken
to stop generation of static electricity as much as possible, and quickly dissipate
it once, when it has occurred. Environmental control must be adequate. When
it is dry, humidifier should be used. It is recommended to avoid using insulators
that easily build static electricity. Semiconductor devices must be stored and
transported in an anti-static container, static shielding bag or conductive
material. All test and measurement tools including work bench and floor should
be grounded. The operator should be grounded using wrist strap. Semiconductor
devices must not be touched with bare hands. Similar precautions need to be
taken for PW boards with semiconductor devices on it.
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2HANDLING OF UNUSED INPUT PINS FOR CMOS
Note: No connection for CMOS device inputs can be cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level
may be generated due to noise, etc., hence causing malfunction. CMOS devices
behave differently than Bipolar or NMOS devices. Input levels of CMOS devices
must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to VDD or GND with a resistor, if it is considered to have
a possibility of being an output pin. All handling related to the unused pins must
be judged device by device and related specifications governing the devices.
3STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note: Power-on does not necessarily define initial status of MOS device. Production
process of MOS does not define the initial operation status of the device.
Immediately after the power source is turned ON, the devices with reset function
have not yet been initialized. Hence, power-on does not guarantee out-pin
levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after
power-on for devices having reset function.
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Regional Information
Some information contained in this document may vary from country to country. Before using any NEC
product in your application, please contact the NEC office in your country to obtain a list of authorized
representatives and distributors. They will verify:
• Device availability
• Ordering information
• Product release schedule
• Availability of related technical literature
• Development environment specifications (for example, specifications for third-party tools and
components, host computers, power plugs, AC supply voltages, and so forth)
• Network requirements
In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary
from country to country.
NEC Electronics Inc. (U.S.)
Santa Clara, California
Tel: 800-366-9782
Fax: 800-729-9288
United Square, Singapore 1130
Tel:253-8311
Fax: 250-3583
NEC Electronics Taiwan Ltd.
Taipei, Taiwan
Tel: 02-719-2377
Fax: 02-719-5951
NEC do Brasil S.A.
Sao Paulo-SP, Brasil
Tel: 011-889-1680
Fax: 011-889-1689
J96. 8
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QTOP is a trademark of NEC Corporation.
MS-DOS is a trademark of Microsoft Corporation.
IBM DOS, PC/AT, and PC DOS are trademarks of International Business Machines Corporation.
The export of this product from Japan is regulated by the Japanese government. To export this product may be
prohibited without governmental license, the need for which must be judged by the customer. The export or reexport of this product from a country other than Japan may also be prohibited without a license from that country.
Please call an NEC sales representative.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
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