Datasheet UPD75P3116GC-AB8, UPD75P3116GK-8A8 Datasheet (NEC)

Page 1
DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD75P3116
4-BIT SINGLE-CHIP MICROCONTROLLER
The µPD75P3116 replaces the µPD753108’s internal mask ROM with a one-time PROM, and features expanded ROM capacity.
µ
Because the development stage using the
Detailed information about functions is provided in the following User’s Manual. Be sure to read it before designing:
PD75P3116 supports programming by users, it is suitable for use in evaluation of systems in the
µ
µ
PD753108 User’s Manual : U10890E

FEATURES

Compatible with µPD753108 Memory capacity:
• PROM : 16384 x 8 bits
• RAM : 512 x 4 bits
Can be operated in same power supply voltage range as the mask version µPD753108
DD = 1.8 to 5.5 V
• V On-chip LCD controller/driver QTOPTM microcontroller
Remark QTOP microcontrollers are microcontrollers with on-chip one-time PROM that are totally supported by NEC.
The support include writing application programs, marking, screening, and verification.

ORDERING INFORMATION

Part Number Package
µ
PD75P3116GC-AB8 64-pin plastic QFP (14 x 14 mm, 0.8-mm pitch)
µ
PD75P3116GK-8A8 64-pin plastic QFP (12 x 12 mm, 0.65-mm pitch)
Caution This device does not provide an internal pull-up resistor connection function by means of mask
option.
Document No. U11369EJ2V0DS00 (2nd edition) Date Published March 1997 N Printed in Japan
The information in this document is subject to change without notice.
The mark shows major revised points.
©
1994
Page 2
µ
PD75P3116

FUNCTION OUTLINE

Item Function
Instruction execution time • 0.95, 1.91, 3.81, or 15.3 µs (main system clock: @ 4.19 MHz)
• 0.67, 1.33, 2.67, or 10.7 µs (main system clock: @ 6.0 MHz)
• 122 µs (subsystem clock: @ 32.768 kHz)
Internal memory PROM 16384 x 8 bits
RAM 512 x 4 bits
General-purpose register • 4-bit manipulation: 8 x 4 banks
• 8-bit manipulation: 4 x 4 banks
I/O ports CMOS input 8 Internal pull-up resistor connection can be specified by software: 7
CMOS I/O 20 Internal pull-up resistor connection can be specified by software: 12
Shared by segment pin: 8 N-ch open-drain I/O 4 13-V withstand voltage Total 32
LCD controller/driver • Segment number selection: 16/20/24 segments (Switchable to CMOS I/O
ports in a batch of 4 pins, max. 8 pins)
• Display mode selection : static, 1/2 duty (1/2 bias), 1/3 duty (1/2 bias), 1/3 duty (1/3 bias), 1/4 duty (1/3 bias)
Timers 5 channels: • 8-bit timer/event counter : 3 channels
(Can be used as 16-bit timer/event counter, carrier generator,
and timer with gate)
• Basic interval timer/watchdog timer : 1 channel
• Watch timer : 1 channel
Serial interface • 3-wire serial I/O mode ··· MSB/LSB first switchable
• 2-wire serial I/O mode
• SBI mode
Bit sequential buffer (BSB) 16 bits Clock output (PCL) Φ, 524, 262, and 65.5 kHz (main system clock: @ 4.19 MHz)
Φ, 750, 375, and 93.8 kHz (main system clock: @ 6.0 MHz)
Buzzer output (BUZ) • 2, 4, and 32 kHz (
• 2.93, 5.86, 46.9 kHz (main system clock: @ 6.0 MHz)
Vectored interrupts • External : 3
• Internal : 5
Test inputs • External : 1
• Internal : 1
System clock oscillation circuit • Ceramic/crystal oscillation circuit for main system clock
• Crystal oscillation circuit for subsystem clock
Standby function STOP/HALT mode Power supply voltage V Package • 64-pin plastic QFP (14 x 14 mm, 0.8-mm pitch)
DD = 1.8 to 5.5 V
• 64-pin plastic QFP (12 x 12 mm, 0.65-mm pitch)
main system clock: @ 4.19 MHz or subsystem clock: @ 32.768 kHz
)
2
Page 3
µ
PD75P3116
CONTENTS
1. PIN CONFIGURATION (Top View) .................................................................................................. 4
2. BLOCK DIAGRAM ............................................................................................................................ 5
3. PIN FUNCTIONS ............................................................................................................................... 6
3.1 Port Pins ................................................................................................................................................... 6
3.2 Non-port Pins ........................................................................................................................................... 8
3.3 Equivalent Circuits for Pins .................................................................................................................... 10
3.4 Recommended Connection of Unused Pins ......................................................................................... 12
4. Mk I AND Mk II MODE SELECTION FUNCTION ............................................................................. 13
4.1 Differences between Mk I Mode and Mk II Mode ................................................................................... 13
4.2 Setting of Stack Bank Selection (SBS) Register ................................................................................... 14
5. DIFFERENCES BETWEEN µPD75P3116 AND µPD753104, 753106, AND 753108 ...................... 15
6. MEMORY CONFIGURATION ........................................................................................................... 16
7. INSTRUCTION SET .......................................................................................................................... 18
8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY ................................................... 27
8.1 Operation Modes for Program Memory Write/Verify ............................................................................ 27
8.2 Program Memory Write Procedure ......................................................................................................... 28
8.3 Program Memory Read Procedure ......................................................................................................... 29
8.4 One-time PROM Screening ..................................................................................................................... 30
9. ELECTRICAL SPECIFICATIONS ..................................................................................................... 31
10. CHARACTERISTIC CURVES (REFERENCE VALUES) .................................................................. 46
11. PACKAGE DRAWINGS ................................................................................................................... 48
12. RECOMMENDED SOLDERING CONDITIONS ................................................................................ 50
APPENDIX A. FUNCTION LIST OF µPD75308B, 753108, AND 75P3116 ........................................... 51
APPENDIX B. DEVELOPMENT TOOLS................................................................................................ 53
APPENDIX C. RELATED DOCUMENTS ............................................................................................... 57
3
Page 4

1. PIN CONFIGURATION (Top View)

• 64-pin plastic QFP (14 x 14 mm, 0.8-mm pitch) :µPD75P3116GC-AB8
µ
• 64-pin plastic QFP (12 x 12 mm, 0.65-mm pitch):
COM363COM262COM161COM060S059S158S257S356S455S554S653S752S851S950S1049S11
PD75P3116GK-8A8
µ
PD75P3116
64
BIAS
V
LC0
V
LC1
V
P30/LCDCL/MD0
P31/SYNC/MD1
P60/KR0/D0 P61/KR1/D1 P62/KR2/D2
LC2
P32/MD2 P33/MD3
Vss P50/D4 P51/D5 P52/D6 P53/D7
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
17
Note Always connect the V
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34
18
19
21
22X123X224
Note
XT120XT2
RESET
P63/KR3/D3
PP pin directly to VDD during normal operation.
VPP
25
26
VDD
P00/INT4
27
28
29
P01/SCK
P03/SI/SB1
P02/SO/SB0
33
30
31
32
P13/TI0
P10/INT0
P11/INT1
P12/INT2/TI1/TI2
S12 S13 S14 S15 P93/S16 P92/S17 P91/S18 P90/S19 P83/S20 P82/S21 P81/S22 P80/S23 P23/BUZ P22/PCL/PTO2 P21/PTO1 P20/PTO0
PIN IDENTIFICATIONS
P00-P03 : Port0 COM0 to COM3 : Common Output 0 to 3 P10-P13 : Port1 V
LC0 to VLC2 : LCD Power Supply 0 to 2
P20-P23 : Port2 BIAS : LCD Power Supply Bias Control P30-P33 : Port3 LCDCL : LCD Clock P50-P53 : Port5 SYNC : LCD Synchronization P60-P63 : Port6 TI0 to TI2 : Timer Input 0 to 2 P80-P83 : Port8 PTO0 to PTO2 : Programmable Timer Output 0 to 2 P90-P93 : Port9 BUZ : Buzzer Clock KR0-KR3 : Key Return 0 to 3 PCL : Programmable Clock SCK : Serial Clock INT0, 1, 4 : External Vectored Interrupt 0, 1, 4 SI : Serial Input INT2 : External Test Input 2 SO : Serial Output X1, X2 : Main System Clock Oscillation 1, 2 SB0, SB1 : Serial Data Bus 0, 1 XT1, XT2 : Subsystem Clock Oscillation 1, 2 RESET : Reset V MD0 to MD3 : Mode Selection 0 to 3 V
PP : Programming Power Supply DD : Positive Power Supply
D0 to D7 : Data Bus 0 to 7 Vss : Ground S0 to S23 : Segment Output 0 to 23
4
Page 5

2. BLOCK DIAGRAM

µ
PD75P3116
BUZ/P23
PTO0/P20
TI1/TI2/
P12/INT2
PTO1/P21
PTO2/
PCL/P22
TOUT0
SI/SB1/P03
SO/SB0/P02
SCK/P01
INT0/P10 INT1/P11 INT4/P00
INT2/P12/TI1/TI2
P60/KR0 to  P63/KR3
TI0/P13
TIMER/EVENT
COUNTER #1
TIMER/EVENT COUNTER #2
BASIC INTERVAL TIMER/ WATCHDOG TIMER
TIMER/EVENT COUNTER #0
INTT1
8-BIT
8-BIT
INTT2
CLOCKED SERIAL INTERFACE
INTERRUPT CONTROL
4
BIT SEQ. BUFFER (16)
WATCH TIMER
INTW f
LCD
INTBT
8-BIT
INTT0 TOUT0
CASCADED 16-BIT TIMER/ EVENT COUNTER
INTCSI
TOUT0
INT1
PROGRAM
COUNTER (14)
PROGRAM
MEMORY
(PROM)
16384 x 8 BITS
CLOCK
OUTPUT
CONTROL
PCL/PTO2/P22
fx/2
CLOCK
DIVIDER
ALU
DECODE
AND
CONTROL
N
CPU CLOCK Φ
SYSTEM CLOCK GENERATOR
MAIN SUB
X2X1 XT2XT1
CY
GENERAL
REG.
DATA
MEMORY
(RAM)
512 x 4 BITS
STAND BY CONTROL
SP (8)
SBS
BANK
 
V
DD
PORT0 P00 to P03
PORT1 P10 to P13
PORT2
PORT3
PORT5
PORT6
PORT8 P80 to P83
PORT9 P90 to P93
f
LCD
V
PP
RESETVss
4
4
4
4
4
4
4
4
4
4
LCD
DRIVER
CONTROLLER/
P20 to P23
P30/MD0 to P33/MD3
P50/D4 to  P53/D7
P60/D0 to  P63/D3
S0 to S1516
S16/P93 to S19/P90
S20/P83 to S23/P80
COM0 to COM34 BIAS
V
LC0
V
LC1
V
LC2
SYNC/P31 LCDCL/P30
5
Page 6

3. PIN FUNCTIONS

3.1 Port Pins (1/2)
µ
PD75P3116
Pin name I/O Alternate function Function 8-bit Status I/O circuit
I/O after reset type
P00 Input INT4 4-bit input port (PORT0) X Input <B>
P01 to P03 are 3-bit pins for which connection of
P01 I/O SCK an internal pull-up resistor can be specified by <F>-A
software.
P02 I/O SO/SB0 <F>-B
P03 I/O SI/SB1 <M>-C
P10 Input INT0 4-bit input port (PORT1) X Input <B>-C
Connection of an internal pull-up resistor can be
P11 INT1 specified by software in 4-bit units.
P10/INT0 can select noise elimination circuit.
P12 TI1/TI2/INT2
P13 TI0
P20 I/O PTO0 4-bit I/O port (PORT2) X Input E-B
Connection of an internal pull-up resistor
P21 PTO1 can be specified by software in 4-bit units.
P22 PCL/PTO2
P23 BUZ
P30 I/O LCDCL/MD0 Programmable 4-bit I/O port (PORT3) X Input E-B
Input and output in single-bit units can be specified.
P31 SYNC/MD1 When set for 4-bit units, connection of an internal
pull-up resistor can be specified by software.
P32 MD2
Note 1
P33 MD3
Note 2
P50
P51
P52
P53
Note 2
Note 2
Note 2
I/O D4 N-ch open-drain 4-bit I/O port (PORT5) X High M-E
When set to open-drain, voltage is 13 V. impedance
D5
D6
D7
Notes 1. Circuit types enclosed in brackets indicate Schmitt trigger input.
2. Low-level input leakage current increases when input instructions or bit manipulation instructions are executed.
6
Page 7
3.1 Port Pins (2/2)
µ
PD75P3116
Pin name I/O Alternate function Function 8-bit Status I/O circuit
I/O after reset type
P60 I/O KR0/D0 Programmable 4-bit I/O port (PORT6) X Input <F>-A
Input and output in single-bit units can be specified.
P61 KR1/D1 When set for 4-bit units, connection of an internal
pull-up resistor can be specified by software.
P62 KR2/D2
P63 KR3/D3
P80 I/O S23 4-bit I/O port (PORT8) Input H
When set for 4-bit units, connection of an internal
P81 S22 pull-up resistor can be specified by software
P82 S21
P83 S20
P90 I/O S19 Programmable 4-bit I/O port (PORT9) Input H
When set for 4-bit units, connection of an internal
P91 S18 pull-up resistor can be specified by software
P92 S17
P93 S16
Note 3
Note 3
.
.
Notes 1. Circuit types enclosed in brackets indicate Schmitt trigger input.
2. Low-level leak current increases when an input instruction or a bit manipulation instruction is performed.
3. Do not connect an internal pull-up resistor by software when used as the segment signal output.
Note 1
7
Page 8
3.2 Non-port Pins (1/2)
µ
PD75P3116
Pin name I/O Alternate function Function Status I/O circuit
after reset type TI0 Input P13 External event pulse input to timer/event counter Input <B>-C TI1 P12/INT2/TI2 TI2 P12/INT2/TI1 PTO0 Output P20 Timer/event counter output Input E-B PTO1 P21 PTO2 P22/PCL PCL P22/PTO2 Clock output BUZ P23 Frequency output (for buzzer or system clock trimming) SCK I/O P01 Serial clock I/O Input <F>-A SO/SB0 P02 Serial data output <F>-B
Serial data bus I/O
SI/SB1 P03 Serial data input <M>-C
Serial data bus I/O
INT4 Input P00 Edge detection vectored interrupt input <B>
(valid for detecting both rising and falling edges)
INT0 Input P10 Edge detection vectored interrupt input
(detection edge is selectable) INT1 P11 INT2 Input P12/TI1/TI2 Rising edge detection testable input Asynch KR0 to KR3 I/O P60 to P63 Parallel falling edge detection testable input Input <F>-A X1 Input Ceramic/crystal resonator connection for main system
X2 and input inverted phase to X2. XT1 Input Crystal resonator connection for subsystem clock oscillation.
XT2 phase to XT2. XT1 can be used as a 1-bit (test) input. RESET Input System reset input (low-level active) <B> MD0 to MD3 Input P30 to P33 Mode selection for program memory (PROM) write/verify Input E-B D0 to D3 I/O D4 to D7 P50 to P53 M-E
Note 2
V
PP
VDD Positive power supply — Vss Ground potential
P60/KR0 to P63/KR3
Programmable power supply voltage applied for program
INT0/P10 can select noise elimination circuit.
clock oscillation. If using an external clock, input signal to X1
If using an external clock, input signal to XT1 and input inverted
Data bus for program memory (PROM) write/verify Input <F>-A
memory (PROM) write/verify.
For normal operation, connect directly to VDD.
Apply +12.5 V for PROM write/verify.
With noise elimination circuit/asynch is selectable
Asynch
Input <B>-C
Note 1
Notes 1. Circuit types enclosed in brackets indicate Schmitt trigger input.
2. The V
PP pin does not operate correctly when it is not connected to the VDD pin during normal operation.
8
Page 9
µ
PD75P3116
3.2 Non-port Pins (2/2)
Pin name I/O Alternate function Function Status I/O circuit
after reset type S0 to S15 S16 to S19 S20 to S23 COM0 to COM3 VLC0 to VLC2 Power supply for driving LCD BIAS Output Output for external split resistor cut Note 2
LCDCL
Note 3
SYNC
Note 3
Output Segment signal output Note 1 G-A Output P93 to P90 Segment signal output Input H Output P83 to P80 Segment signal output Input H Output Common signal output Note 1 G-B
I/O P30/MD0 Clock output for driving external expansion driver Input E-B I/O P31/MD1 Clock output for synchronization of external expansion driver Input E-B
Notes 1. The VPP pin does not operate normally if it is not connected with VDD pin when normal operation.
2. The V
LCX (X = 0, 1, 2) shown below are selected as the input source for the display outputs.
S0 to S23: V
LC1, COM0 to COM2: VLC2, COM3: VLC0
3. When the split resistor is incorporated : Low level When the split resistor is not incorporated : High impedance
4. These pins are provided for future system expansion. Currently, only P30 and P31 are used.
9
Page 10

3.3 Equivalent Circuits for Pins

µ
The equivalent circuits for the
TYPE A TYPE D
PD75P3116’s pins are shown in abbreviated form below.
µ
PD75P3116
VDD
P-ch
IN
N-ch
CMOS standard input buffer
IN
VDD
Data
Output
disable
Push-pull output that can be set to high impedance output (with both P-ch and N-ch OFF).
TYPE E-BTYPE B
P.U.R.
enable
Data
Type D
Output
disable
P-ch
N-ch
VDD
P.U.R.
P-ch
IN/OUT
OUT
Schmitt trigger input with hysteresis characteristics.
TYPE B-C TYPE F-A
VDD
P.U.R.
P-ch
IN
P.U.R. : Pull-Up Resistor
P.U.R. enable
Output
disable
Data
Type A
P.U.R. : Pull-Up Resistor
P.U.R. enable
Type D
Type B
P.U.R. : Pull-Up Resistor
VDD
P.U.R.
P-ch
IN/OUT
(Continued)
10
Page 11
TYPE F-B TYPE H
VDD
P.U.R.
µ
PD75P3116
(Continued)
Output
disable
(P)
Data
Output
disable
Output
disable
(N)
P.U.R. : Pull-Up Resistor
LC0
V
VLC1
SEG
data
V
LC2
P-ch N-ch
P-ch N-ch
P-ch N-ch
P.U.R. enable
VDD
P-ch
N-ch
N-chP-ch
N-ch
P-ch
IN/OUT
OUT
Output
disable
TYPE M-CTYPE G-A
SEG
data
Data
Output
disable
Data
Type G-A
Type E-B
P.U.R. enable
N-ch
P-ch N-ch
IN/OUT
VDD
P.U.R.
P-ch
IN/OUT
N-ch
TYPE G-B TYPE M-E
LC0
V
VLC1
COM
data
VLC2
P-ch N-ch
N-ch
P-ch N-ch
P-ch N-ch
N-chP-ch
P-chN-ch
Input instruction
OUT
Data
Output
disable
Pull-up resistor that operates only when an input
Note
instruction is executed. (The current flows from V
P.U.R. : Pull-Up Resistor
N-ch
(+13-V withstand
Note
Voltage
controller
voltage)
(+13-V withstand voltage)
VDD
P-ch
P.U.R.
DD to a pin when the pin is at low level.)
IN/OUT
11
Page 12

3.4 Recommended Connection of Unused Pins

Table 3-1. List of Unused Pin Connection
Pin Recommended connection P00/INT4 Connect to Vss or VDD P01/SCK Individually connect to Vss or VDD through a resistor. P02/SO/SB0 P03/SI/SB1 Connect to Vss P10/INT0 and P11/INT1 Connect to Vss or V P12/TI1/TI2/INT2 P13/TI0 P20/PTO0 Input status : Individually connect to Vss or V P21/PTO1 through a resistor P22/PTO2/PCL Output status : Leave open P23/BUZ P30/LCDCL/MD0 P31/SYNC/MD1 P32/MD2 P33/MD3 P50/D4 to P53/D7 Connect to Vss P60/KR0/D0 to P63/KR3/D3 Input status :
Output status : Leave open S0 to S15 Leave open COM0 to COM3 S16/P93 to S19/P90 Input status : S20/P83 to S23/P80 Output status : Leave open V
LC0 to VLC2 Connect to Vss
BIAS Connect to Vss only when neither of V
VLC2 is used. In other cases, leave open.
Note
XT1
Note
XT2 V
PP Always connect to VDD directly
Connect to Vss or VDD
Leave open
DD
DD
Individually connect to Vss or VDD through a resistor
Individually connect to Vss or VDD through a resistor
LC0, VLC1 and
µ
PD75P3116
12
Note In case the subsystem clock is not used, set SOS.0 = 1 (on-chip feedback
resistor not used).
Page 13
µ
PD75P3116

4. Mk I AND Mk II MODE SELECTION FUNCTION

Setting a stack bank selection (SBS) register for the µPD75P3116 enables the program memory to be switched between
µ
the Mk I mode and Mk II mode. This function is applicable when using the 753106, or 753108.
When the SBS bit 3 is set to 1 : sets the Mk I mode (supports the Mk I mode for the When the SBS bit 3 is set to 0 : sets the Mk II mode (supports the Mk II mode for the

4.1 Differences between Mk I Mode and Mk II Mode Table 4-1 lists differences between the Mk I mode and the Mk II mode for the

Table 4-1. Differences between Mk I Mode and Mk II Mode
Item Mk I mode Mk II mode Program counter PC Program memory (bytes) 16384 Data memory (bits) 512 x 4 Stack Stack bank Selectable via memory banks 0, 1
No. of stack bytes 2 bytes 3 bytes
Instruction BRA !addr1 instruction Not available Available
CALLA !addr1 instruction Instruction CALL !addr instruction 3 machine cycles 4 machine cycles execution time CALLF !faddr instruction 2 machine cycles 3 machine cycles Supported mask ROMs When set to Mk I mode: When set to Mk II mode:
13-0
µ
PD753104, 753106, and 753108
PD75P3116 to evaluate the µPD753104,
µ
PD753104, 753106, and 753108)
µ
PD753104, 753106, and 753108)
µ
PD75P3116.
µ
PD753104, 753106, and 753108
Caution The Mk II mode supports a program area exceeding 16 Kbytes for the 75X and 75XL Series. Therefore,
this mode is effective for enhancing software compatibility with products that have a program area of more than 16 Kbytes. With regard to the number of stack bytes during execution of subroutine call instructions, the usable area increases by 1 byte per stack compared to the Mk I mode when the Mk II mode is selected. However, when the CALL !addr and CALLF !faddr instructions are used, the machine cycle becomes longer by 1 machine cycle. Therefore, if more emphasis is placed on RAM use efficiency and processing performance than on software compatibility, the Mk I mode should be used.
13
Page 14
µ
PD75P3116

4.2 Setting of Stack Bank Selection (SBS) Register

Use the stack bank selection register to switch between the Mk I mode and Mk II mode. Figure 4-1 shows the format of the stack bank selection register. The stack bank selection register is set using a 4-bit memory manipulation instruction. When using the Mk I mode, be
Note
sure to initialize the stack bank selection register to 100XB
Note
be sure to initialize it to 000XB
.
at the beginning of the program. When using the Mk II mode,
Note Set the desired value for X.
Figure 4-1. Format of Stack Bank Selection Register
Address 3 2 1 0
SBS3 SBS2 SBS1 SBS0F84H
Symbol
SBS
Stack area specification
0
0
Memory bank 0
0
1
Memory bank 1
1
0
Setting prohibited
1
1
0 Be sure to enter “0” for bit 2.
Mode selection specification
01Mk II mode
Mk I mode
Caution SBS3 is set to “1” after RESET input, and consequently the CPU operates in the Mk I mode. When using
instructions for the Mk II mode, set SBS3 to “0” and set the Mk II mode before using the instructions.
14
Page 15
µ
PD75P3116
5. DIFFERENCES BETWEEN µPD75P3116 AND µPD753104, 753106, 753108
The µPD75P3116 replaces the internal mask ROM in the µPD753104, 753106, and 753108 with a one-time PROM and features expanded ROM capacity. The µPD75P3116’s Mk I mode supports the Mk I mode in the µPD753104, 753106, and 753108 and the µPD75P3116’s Mk II mode supports the Mk II mode in the µPD753104, 753106, and 753108.
µ
Table 5-1 lists differences among the differences among these products before using them with PROMs for debugging or prototype testing of application systems or, later, when using them with a mask ROM for full-scale production. For details on the CPU functions and internal hardware, refer to the User’s Manual.
Table 5-1. Differences between
PD75P3116 and the µPD753104, 753106, and 753108. Be sure to check the
µ
PD75P3116 and µPD753104, 753106, and 753108
Item Program counter 12 bits 13 bits 14 bits Program memory (bytes) Mask ROM Mask ROM Mask ROM One-time PROM
Data memory (x 4 bits) 512 Mask options Pull-up resistor for Available Not available
PORT5 (On chip/not on chip can be specified.) (Not on chip) Split resistor for
LCD driving power supply Wait time after Available Not available
RESET (Selectable between 217/fX and 215/fX) (fixed to 215/fX) Feedback resistor Available Not available
of subsystem clock (Use/not use can be selected.) (Enable)
Pin configuration Pin Nos. 5 to 8 P30 to P33
Pin Nos. 10 to 13 P50 to P53 P50/D4 to P53/D7 Pin Nos. 14 to 17 P60/KR0 to P63/KR3 Pin No. 21 IC VPP
Other Noise resistance and noise radiation may differ due to the different circuit sizes and mask
µ
PD753104
4096 6144 8192 16384
layouts.
µ
PD753106
µ
PD753108
µ
P30/MD0 to P33/MD3
P60/KR0/D0 to P63/KR3/D3
PD75P3116
Note 217/fX : 21.8 ms at 6.0-MHz operation, 31.3 ms at 4.19-MHz operation
215/fX : 5.46 ms at 6.0-MHz operation, 7.81 ms at 4.19-MHz operation
Note
Caution Noise resistance and noise radiation are different in PROM and mask ROMs. When changing from
PROM versions to mask ROM versions when switching from prototype development to full production, be sure to fully evaluate the mask ROM version’s CS (not ES).
15
Page 16

6. MEMORY CONFIGURATION

765 0
MBE
RBE
0000H
0002H
0004H
0006H
0008H
000AH
000CH
MBE
MBE
MBE
MBE
MBE
MBE
Internal reset start address (upper 6 bits) Internal reset start address (lower 8 bits)
RBE
INTBT/INT4 start address (upper 6 bits) INTBT/INT4 start address (lower 8 bits)
RBE
INT0 start address (upper 6 bits) INT0 start address (lower 8 bits)
RBE
INT1 start address (upper 6 bits) INT1 start address (lower 8 bits)
RBE
INTCSI start address (upper 6 bits) INTCSI start address (lower 8 bits)
RBE
INTT0 start address (upper 6 bits) INTT0 start address (lower 8 bits)
RBE
INTT1/INTT2 start address (upper 6 bits) INTT1/INTT2 start address (lower 8 bits)
Figure 6-1. Program Memory Map
CALLF
!faddr instruction
entry address
BRCB
!caddr instruction
branch address
µ
PD75P3116
Branch addresses for the following instructions
• BR !addr
• CALL !addr
• BRA !addr1
• CALLA !addr1
• BR BCDE
• BR BCXA
Note
Note
Branch/call
0020H
007FH
0080H
07FFH
0800H
0FFFH
1000H
1FFFH
2000H
2FFFH
3000H
3FFFH
Reference table for GETI instruction
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
BRCB
!caddr instruction
branch address
address by GETI
BR $addr instruction
relative branch address
(–15 to –1,
+2 to +16)
Note Can be used only in the Mk II mode
Remark For instructions other than those noted above, the BR PCDE and BR PCXA instructions can be used to branch
to addresses with changes in the PC’s lower 8 bits only.
16
Page 17
Figure 6-2. Data Memory Map
µ
PD75P3116
Data area
static RAM
(512 x 4)
Stack area
Note
Display data memory
General-purpose register area
000H
01FH 020H
0FFH
100H
1DFH 1E0H
1F7H 1F8H
1FFH
Data memory
(32 x 4)
256 x 4
(224 x 4)
256 x 4
(224 x 4)
(24 x 4)
(8 x 4)
Not incorporated
Memory bank
0
1
F80H
Peripheral hardware area
FFFH
Note Memory bank 0 or 1 can be selected as the stack area.
128 x 4
15
17
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PD75P3116

7. INSTRUCTION SET

(1) Representation and coding formats for operands
In the instruction’s operand area, use the following coding format to describe operands corresponding to the instruction’s operand representations (for further description, refer to the RA75X Assembler Package User’s Manual Language (EEU-1363)). When there are several codes, select and use just one. Codes that consist of upper-case letters and + or – symbols are key words that should be entered as they are. For immediate data, enter an appropriate numerical value or label. Enter register flag symbols as label descriptors instead of mem, fmem, pmem, bit, etc. (for further description, refer to the User’s Manual). The number of labels that can be entered for fmem and pmem are restricted.
Representation Coding format reg X, A, B, C, D, E, H, L reg1 X, B, C, D, E, H, L rp XA, BC, DE, HL rp1 BC, DE, HL rp2 BC, DE rp’ XA, BC, DE, HL, XA’, BC’, DE’, HL’ rp’1 BC, DE, HL, XA’, BC’, DE’, HL’ rpa HL, HL+, HL–, DE, DL rpa1 DE, DL n4 4-bit immediate data or label n8 8-bit immediate data or label mem 8-bit immediate data or label bit 2-bit immediate data or label fmem FB0H to FBFH, FF0H to FFFH immediate data or label pmem FC0H to FFFH immediate data or label addr 0000H to 3FFFH immediate data or label addr1 0000H to 3FFFH immediate data or label (Mk II mode only) caddr 12-bit immediate data or label faddr 11-bit immediate data or label taddr 20H to 7FH immediate data (however, bit0 = 0) or label PORTn PORT0 to PORT3, PORT5, PORT6, PORT8, PORT9 IEXXX IEBT, IECSI, IET0 to IET2, IE0 to IE2, IE4, IEW RBn RB0 to RB3 MBn MB0, MB1, MB15
Note
18
Note When processing 8-bit data, only even-numbered addresses can be specified.
Page 19
(2) Operation legend
A : A register; 4-bit accumulator B : B register C : C register D : D register E : E register H : H register L : L register X : X register XA : Register pair (XA); 8-bit accumulator BC : Register pair (BC) DE : Register pair (DE) HL : Register pair (HL) XA’ : Expansion register pair (XA’) BC’ : Expansion register pair (BC’) DE’ : Expansion register pair (DE’) HL’ : Expansion register pair (HL’) PC : Program counter SP : Stack pointer CY : Carry flag; bit accumulator PSW : Program status word MBE : Memory bank enable flag RBE : Register bank enable flag PORTn : Port n (n = 0 to 3, 5, 6, 8, 9) IME : Interrupt master enable flag IPS : Interrupt priority selection register IEXXX : Interrupt enable flag RBS : Register bank selection register MBS : Memory bank selection register PCC : Processor clock control register . : Delimiter for address and bit (XX) : Addressed data with xx XXH : Hexadecimal data
µ
PD75P3116
19
Page 20
(3) Description of symbols used in addressing area
MB = MBE • MBS
*1
MB = 0
*2
MBE = 0 :
*3
MBE = 1 :
MB = 15, fmem = FB0H to FBFH, FF0H to FFFH
*4
MB = 15, pmem = FC0H to FFFH
*5
addr = 0000H to 3FFFH
*6
addr, addr1 =*7(Current PC) –15 to (Current PC) –1
caddr =0000H to 0FFFH (PC
*8
MBS = 0, 1, 15
MB = 0 (000H to 07FH) MB = 15 (F80H to FFFH) MB = MBS MBS = 0, 1, 15
(Current PC) +2 to (Current PC) +16
13,12
= 00B) or 1000H to 1FFFH (PC 2000H to 2FFFH (PC 3000H to 3FFFH (PC
13,12
13,12
13,12
= 01B) or
= 10B) or
= 11B)
µ
PD75P3116
Data memory
addressing
Program memory
addressing
faddr = 0000H to 07FFH
*9
taddr = 0020H to 007FH
*10
addr1 = 0000H to 3FFFH (Mk II mode only)
*11
Remarks 1. MB indicates access-enabled memory banks.
2. In area *2, MB = 0 for both MBE and MBS.
3. In areas *4 and *5, MB = 15 for both MBE and MBS.
4. Areas *6 to *11 indicate corresponding address-enabled areas.
(4) Description of machine cycles
S indicates the number of machine cycles required for skipping of skip-specified instructions. The value of S varies as shown below.
• No skip .....................................................................S = 0
• Skipped instruction is 1-byte or 2-byte instruction....S = 1
Note
• Skipped instruction is 3-byte instruction
..............S = 2
Note 3-byte instructions: BR !addr, BRA !addr1, CALL !addr, and CALLA !addr1
Caution The GETI instruction is skipped for one machine cycle.
One machine cycle equals one cycle (= t
20
CY) of the CPU clock Φ. Use the PCC setting to select among four cycle times.
Page 21
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PD75P3116
Instruction Mnemonic Operand
group
Transfer MOV A, #n4 1 1 A<-n4 String-effect A
reg1, #n4 2 2 reg1<-n4 XA, #n8 2 2 XA<-n8 String-effect A HL, #n8 2 2 HL<-n8 String-effect B rp2, #n8 2 2 rp2<-n8 A, @HL 1 1 A<-(HL) *1 A, @HL+ 1 2+S A<-(HL), then L<-L+1 *1 L=0 A, @HL– 1 2+S A<-(HL), then L<-L–1 *1 L=FH A, @rpa1 1 1 A<-(rpa1) *2 XA, @HL 2 2 XA<-(HL) *1 @HL, A 1 1 (HL)<-A *1 @HL, XA 2 2 (HL)<-XA *1 A, mem 2 2 A<-(mem) *3 XA, mem 2 2 XA<-(mem) *3 mem, A 2 2 (mem)<-A *3 mem, XA 2 2 (mem)<-XA *3 A, reg 2 2 A<-reg XA, rp’ 2 2 XA<-rp’ reg1, A 2 2 reg1<-A rp’1, XA 2 2 rp’1<-XA
XCH A, @HL 1 1 A<->(HL) *1
A, @HL+ 1 2+S A<->(HL), then L<-L+1 *1 L=0 A, @HL– 1 2+S A<->(HL), then L<-L–1 *1 L=FH A, @rpa1 1 1 A<->(rpa1) *2 XA, @HL 2 2 XA<->(HL) *1 A, mem 2 2 A<->(mem) *3 XA, mem 2 2 XA<->(mem) *3 A, reg1 1 1 A<->reg1
XA, rp’ 2 2 XA<->rp’ Table MOVT XA, @PCDE 1 3 XA<-(PC13-8+DE)ROM reference XA, @PCXA 1 3 XA<-(PC13-8+XA)ROM
XA, @BCDE
XA, @BCXA
No. of Machine bytes cycle area
Note
1 3 XA<-(BCDE)ROM *6
Note
1 3 XA<-(BCXA)ROM *6
Operation
Addressing
Skip
condition
Note Only the lower 3 bits in the B register are valid.
21
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PD75P3116
Instruction Mnemonic Operand
group
Bit transfer MOV1 CY, fmem.bit 2 2 CY<-(fmem.bit) *4
CY, pmem.@L 2 2 CY<-(pmem7-2+L3-2.bit(L1-0)) *5 CY, @H+mem.bit 2 2 CY<-(H+mem3-0.bit) *1 fmem.bit, CY 2 2 (fmem.bit)<-CY *4 pmem.@L, CY 2 2 (pmem7-2+L3-2.bit(L1-0))<-CY *5 @H+mem.bit, CY 2 2 (H+mem3-0.bit)<-CY *1
Arithmetic ADDS A, #n4 1 1+S A<-A+n4 carry
XA, #n8 2 2+S XA<-XA+n8 carry A, @HL 1 1+S A<-A+(HL) *1 carry XA, rp’ 2 2+S XA<-XA+rp’ carry rp’1, XA 2 2+S rp’1<-rp’1+XA carry
ADDC A, @HL 1 1 A, CY<-A+(HL)+CY *1
XA, rp’ 2 2 XA, CY<-XA+rp’+CY rp’1, XA 2 2 rp’1, CY<-rp’1+XA+CY
SUBS A, @HL 1 1+S A<-A–(HL) *1 borrow
XA, rp’ 2 2+S XA<-XA–rp’ borrow rp’1, XA 2 2+S rp’1<-rp’1–XA borrow
SUBC A, @HL 1 1 A, CY<-A–(HL)–CY *1
XA, rp’ 2 2 XA, CY<-XA–rp’–CY rp’1, XA 2 2 rp’1, CY<-rp’1–XA–CY
AND A, #n4 2 2 A<-A ^ n4
A, @HL 1 1 A<-A ^ (HL) *1 XA, rp’ 2 2 XA<-XA ^ rp’ rp’1, XA 2 2 rp’1<-rp’1 ^ XA
OR A, #n4 2 2 A<-A v n4
A, @HL 1 1 A<-A v (HL) *1 XA, rp’ 2 2 XA<-XA v rp’ rp’1, XA 2 2 rp’1<-rp’1 v XA
XOR A, #n4 2 2 A<-A v n4
A, @HL 1 1 A<-A v (HL) *1 XA, rp’ 2 2 XA<-XA v rp’
rp’1, XA 2 2 rp’1<-rp’1 v XA Accumulator RORC A 1 1 CY<-A0, A3<-CY, An-1<-An manipulation NOT A 2 2 A<-A Increment/ INCS reg 1 1+S reg<-reg+1 reg=0 decrement rp1 1 1+S rp1<-rp1+1 rp1=00H
@HL 2 2+S (HL)<-(HL)+1 *1 (HL)=0
mem 2 2+S (mem)<-(mem)+1 *3 (mem)=0
DECS reg 1 1+S reg<-reg–1 reg=FH
rp’ 2 2+S rp’<-rp’–1 rp’=FFH
No. of Machine
bytes cycle area
Operation
Addressing
Skip
condition
22
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PD75P3116
Instruction Mnemonic Operand
group
Comparison SKE reg, #n4 2 2+S Skip if reg=n4 reg=n4
@HL, #n4 2 2+S Skip if (HL)=n4 *1 (HL)=n4 A, @HL 1 1+S Skip if A=(HL) *1 A=(HL) XA, @HL 2 2+S Skip if XA=(HL) *1 XA=(HL) A, reg 2 2+S Skip if A=reg A=reg
XA, rp’ 2 2+S Skip if XA=rp’ XA=rp’ Carry flag SET1 CY 1 1 CY<-1 manipulation CLR1 CY 1 1 CY<-0
SKT CY 1 1+S Skip if CY=1 CY=1
NOT1 CY 1 1 CY<-CY Memory bit SET1 mem.bit 2 2 (mem.bit)<-1 *3 manipulation fmem.bit 2 2 (fmem.bit)<-1 *4
pmem.@L 2 2 (pmem7-2+L3-2.bit(L1-0))<-1 *5 @H+mem.bit 2 2 (H+mem3-0.bit)<-1 *1
CLR1 mem.bit 2 2 (mem.bit)<-0 *3
fmem.bit 2 2 (fmem.bit)<-0 *4 pmem.@L 2 2 (pmem7-2+L3-2.bit(L1-0))<-0 *5 @H+mem.bit 2 2 (H+mem3-0.bit)<-0 *1
SKT mem.bit 2 2+S Skip if(mem.bit)=1 *3 (mem.bit)=1
fmem.bit 2 2+S Skip if(fmem.bit)=1 *4 (fmem.bit)=1 pmem.@L 2 2+S Skip if(pmem7-2+L3-2.bit(L1-0))=1 *5 (pmem.@L)=1 @H+mem.bit 2 2+S Skip if(H+mem3-0.bit)=1 *1
SKF mem.bit 2 2+S Skip if(mem.bit)=0 *3 (mem.bit)=0
fmem.bit 2 2+S Skip if(fmem.bit)=0 *4 (fmem.bit)=0 pmem.@L 2 2+S Skip if(pmem7-2+L3-2.bit(L1-0))=0 *5 (pmem.@L)=0 @H+mem.bit 2 2+S Skip if(H+mem3-0.bit)=0 *1
SKTCLR fmem.bit 2 2+S Skip if(fmem.bit)=1 and clear *4 (fmem.bit)=1
pmem.@L 2 2+S @H+mem.bit 2 2+S Skip if(H+mem3-0.bit)=1 and clear *1
AND1 CY, fmem.bit 2 2 CY<-CY ^ (fmem.bit) *4
CY, pmem.@L 2 2 CY<-CY ^ (pmem7-2+L3-2.bit(L1-0)) *5 CY, @H+mem.bit 2 2 CY<-CY ^ (H+mem3-0.bit) *1
OR1 CY, fmem.bit 2 2 CY<-CY v (fmem.bit) *4
CY, pmem.@L 2 2 CY<-CY v (pmem7-2+L3-2.bit(L1-0)) *5 CY, @H+mem.bit 2 2 CY<-CY v (H+mem3-0.bit) *1
XOR1 CY, fmem.bit 2 2 CY<-CY v (fmem.bit) *4
CY, pmem.@L 2 2 CY<- CY v (pmem7-2+L3-2.bit(L1-0)) *5 CY, @H+mem.bit 2 2 CY<-CY v (H+mem3-0.bit) *1
No. of Machine bytes cycle area
Skip if(pmem
Operation
7-2+L3-2
.bit(L
1-0
))=1 and clear
Addressing
*5 (pmem.@L)=1
condition
(@H+mem.bit)=1
(@H+mem.bit)=0
(@H+mem.bit)=1
Skip
23
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PD75P3116
Instruction Mnemonic Operand
group
Branch BR
Note 1
BRA
BRCB !caddr 2 2 PC13-0<-PC13, 12+caddr11-0 *8
addr PC13-0<-addr *6
addr1 PC13-0<-addr1 *11
!addr 3 3 PC13-0<-addr *6 $addr 1 2 PC13-0<-addr *7
$addr1 1 2 PC13-0<-addr1 PCDE 2 3 PC13-0<-PC13-8+DE PCXA 2 3 PC13-0<-PC13-8+XA BCDE 2 3 PC13-0<-BCDE BCXA 2 3 PC13-0<-BCXA
Note 1
!addr1 3 3 PC13-0<-addr1 *11
No. of Machine
bytes cycle area
Use the assembler to select the most appropriate instruction among the following.
• BR !addr
• BRCB !caddr
• BR $addr
Use the assembler to select the most appropriate instruction among the following.
• BRA !addr1
• BR !addr
• BRCB !caddr
• BR $addr1
Operation
Note 2
Note 2
Addressing
*6 *6
Skip
condition
Notes 1. The portion in a double box can be supported only in the Mk II mode. The others can be supported only in the
MK I mode.
2. The B register is valid only for the lower two bits.
24
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PD75P3116
Instruction Mnemonic Operand
group
Subroutine CALLA
Note
!addr1 3 3
No. of Machine
Operation
bytes cycle area
(SP–6)(SP–3)(SP–4)<-PC11-0
stack control (SP–5)<-0, 0, PC13, 12
(SP–2)
<-X, X, MBE, RBE
PC13-0<-addr1, SP<-SP–6
Note
CALL
!addr 3 3 (SP–4)(SP–1)(SP–2)<-PC11-0 *6
(SP–3)<-MBE, RBE, PC13, 12 PC13-0<-addr, SP<-SP–4
4 (SP–6)(SP–3)(SP–4)<-PC11-0
(SP–5)<-0, 0, PC13, 12 (SP–2)<-X, X, MBE, RBE PC13-0<-addr, SP<-SP–6
Note
CALLF
!faddr 2 2 (SP–4)(SP–1)(SP–2)<-PC11-0 *9
(SP–3)<-MBE, RBE, PC13, 12 PC13-0<-000+faddr, SP<-SP–4
3
(SP–6)(SP–3)(SP–4)<-PC11-0 (SP–5)<-0, 0, PC13, 12 (SP–2)<-X, X, MBE, RBE PC13-0<-000+faddr, SP<-SP–6
Note
RET
1 3 MBE, RBE, PC13, 12<-(SP+1)
PC11-0<-(SP)(SP+3)(SP+2) SP<-SP+4
X, X, MBE, RBE<-(SP+4) PC11-0<-(SP)(SP+3)(SP+2) 0, 0, PC13, 12<-(SP+1) SP<-SP+6
Note
RETS
1 3+S MBE, RBE, PC13, 12<-(SP+1) Unconditional
PC11-0<-(SP)(SP+3)(SP+2) SP<-SP+4 then skip unconditionally
X, X, MBE, RBE<-(SP+4) PC11-0<-(SP)(SP+3)(SP+2) 0, 0, PC13, 12<-(SP+1) SP<-SP+6 then skip unconditionally
Note
RETI
1 3 MBE, RBE, PC13, 12<-(SP+1)
PC11-0<-(SP)(SP+3)(SP+2) PSW<-(SP+4)(SP+5) SP<-SP+6
0, 0, PC13, 12<-(SP+1) PC11-0<-(SP)(SP+3)(SP+2) PSW<-(SP+4)(SP+5), SP<-SP+6
Addressing
*11
Skip
condition
Note
The portion in a double box can be supported only in the Mk II mode. Other portions can be supported only in the Mk I mode.
25
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µ
PD75P3116
Instruction Mnemonic Operand
group Subroutine PUSH rp 1 1 (SP–1)(SP–2)<-rp, SP<-SP–2 stack control BS 2 2
POP rp 1 1 rp<-(SP+1)(SP), SP<-SP+2
BS 2 2 MBS<-(SP+1), RBS<-(SP), SP<-SP+2 Interrupt EI 2 2 IME(IPS.3)<-1 control IEXXX 2 2 IEXXX<-1
DI 2 2 IME(IPS.3)<-0
IEXXX 2 2 IEXXX<-0 I/O IN
CPU control HALT 2 2 Set HALT Mode(PCC.2<-1)
Special SEL RBn 2 2 RBS<-n (n=0 to 3)
Note 1
OUT
STOP 2 2 Set STOP Mode(PCC.3<-1) NOP 1 1 No Operation
GETI
A, PORTn 2 2 A<-PORTn
XA, PORTn 2 2 XA<-PORTn+1, PORTn(n=8)
Note 1
PORTn, A 2 2 PORTn<-A
PORTn, XA 2 2 PORTn+1, PORTn<-XA(n=8)
MBn 2 2 MBS<-n (n=0, 1, 15)
Note 2, 3
taddr 1 3 • When using TBR instruction *10
No. of Machine
bytes cycle area
(SP–1)<-MBS, (SP–2)<-RBS, SP<-SP–2
PC13-0<-(taddr)5-0+(taddr+1)
- - - - - - - - - - - - - - - - - - - - - - - - - - -
• When using TCALL instruction (SP–4)(SP–1)(SP–2)<-PC11-0
(SP–3)<-MBE, RBE, PC13, 12 PC13-0<-(taddr)5-0+(taddr+1) SP<-SP–4
- - - - - - - - - - - - - - - - - - - - - - - - - - -
• When using instruction other than Determined by TBR or TCALL referenced Execute (taddr)(taddr+1) instructions instruction
1 3 • When using TBR instruction *10
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
PC13-0<-(taddr)5-0+(taddr+1)
4 • When using TCALL instruction
(SP–6)(SP–3)(SP–4)<-PC11-0 (SP–5)<-0, 0, PC13, 12 (SP–2)<-X, X, MBE, RBE PC13-0<-(taddr)5-0+(taddr+1)
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
3 • When using instruction other than Determined by
TBR or TCALL referenced Execute (taddr)(taddr+1) instructions instruction
Operation
(n=0 to 3, 5, 6, 8, 9)
(n=2 to 3, 5, 6, 8, 9)
SP<-SP–6
Addressing
- - - - - - - - - - - -
- - - - - - - - - - - -
- - - - - - - - - - - -
- - - - - - - - - - - -
Skip
condition
Notes 1. Setting MBE=0 or MBE=1, MBS=15 is required during the execution of IN or OUT instruction.
2. TBR and TCALL instructions are assembler pseudo-instructions for the GETI instruction table definitions.
3. The portion in a double box can be supported only in the Mk II mode. Other portions can be supported only
in the Mk I mode.
26
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PD75P3116

8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY

The program memory contained in the µPD75P3116 is a 16384 x 8-bit one-time PROM that can be electrically written one time only. The pins listed in the table below are used for this PROM’s write/verify operations. Clock input from the X1 pin is used instead of address input as a method for updating addresses.
Pin Function
VPP Pin where program voltage is applied during program memory
X1, X2 Clock input pins for address updating during program memory
MD0 to MD3 Operation mode selection pin for program memory write/verify D0/P60 to D3/P63 8-bit data I/O pins for program memory write/verify
(lower 4 bits) D4/P50 to D7/P53 (upper 4 bits)
VDD Pin where power supply voltage is applied. Applies 1.8 to 5.5
Caution Pins not used for program memory write/verify should be connected to Vss.
write/verify (usually VDD potential)
write/verify. Input the X1 pin’s inverted signal to the X2 pin.
V in normal operation mode and +6 V for program memory write/verify.

8.1 Operation Modes for Program Memory Write/Verify

When +6 V is applied to the V
DD pin and +12.5 V to the VPP pin, the
µ
PD75P3116 enters the program memory write/verify
mode. The following operation modes can be specified by setting pins MD0 to MD3 as shown below.
Operation mode specification Operation mode VPP VDD MD0 MD1 MD2 MD3 +12.5 V +6 V H L H L Zero-clear program memory address
L H H H Write mode L L H H Verify mode H X H H Program inhibit mode
X: L or H
27
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8.2 Program Memory Write Procedure

Program memory can be written at high speed using the following procedure.
(1) Pull down unused pins to Vss through resistors. Set the X1 pin low. (2) Supply 5 V to the V
DD and VPP pins.
(3) Wait 10 µs. (4) Select the program memory address zero-clear mode. (5) Supply 6 V to V
DD and 12.5 V to VPP pins.
(6) Write data in the 1-ms write mode. (7) Select the verify mode. If the data is written, go to (8) and if not, repeat (6) and (7). (8) Additional write. (X: number of write operations from (6) and (7)) x 1 ms (9) Apply four pulses to the X1 pin to increment the program memory address by one. (10) Repeat (6) to (9) until the end address is reached. (11) Select the program memory address zero-clear mode. (12) Return the V
DD- and VPP-pin voltages to 5 V.
(13) Turn off the power.
The following figure shows steps (2) to (9).
µ
PD75P3116
V
V
PP
V
DD
D0/P60 to D3/P63 D4/P50 to D7/P53
MD1/P31
MD2/P32
V
VDD + 1
V
X1
MD0/P30
PP
DD
DD
X repetitions
Write Verify
Data input
Data
output
Additional write
Data input
Address increment
28
MD3/P33
Page 29
µ
PD75P3116

8.3 Program Memory Read Procedure

The µPD75P3116 can read program memory contents using the following procedure. (1) Pull down unused pins to V
SS through resistors. Set the X1 pin low.
(2) Supply 5 V to the VDD and VPP pins. (3) Wait 10 µs. (4) Select the program memory address zero-clear mode. (5) Supply 6 V to the V
DD and 12.5 to the VPP pins.
(6) Select the verify mode. Apply four pulses to the X1 pin. Every four clock pulses will output the data stored in one
address. (7) Select the program memory address zero-clear mode. (8) Return the V
DD- and VPP-pin voltages to 5V.
(9) Turn off the power.
The following figure shows steps (2) to (7).
V
V
PP
PP
V
DD
VDD + 1
V
DD
D0/P60 to D3/P63 D4/P50 to D7/P53
DD
V
X1
MD0/P30
MD1/P31
MD2/P32
MD3/P33
Data output Data output
“L”
29
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PD75P3116

8.4 One-time PROM Screening

Due to its structure, the one-time PROM cannot be fully tested before shipment by NEC. Therefore, NEC recommends that after the required data is written and the PROM is stored under the temperature and time conditions shown below, the PROM should be verified via a screening.
Storage temperature Storage time
125˚C 24 hours
NEC offers QTOP microcontrollers for which one-time PROM writing, marking, screening, and verification are provided at additional cost. For more detailed information, contact an NEC sales representative.
30
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PD75P3116

9. ELECTRICAL SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS (TA = 25˚C)
Parameter Symbol Test Conditions Rating Unit Power supply voltage V PROM power supply VPP –0.3 to +13.5 V
voltage Input voltage VI1 Except port 5 –0.3 to VDD +0.3 V
Output voltage VO –0.3 to VDD +0.3 V Output current high I
Output current low IOL Per pin 30 mA
Operating ambient TA –40 to +85 temperature
Storage temperature T
DD –0.3 to +7.0 V
VI2 Port 5 (N-ch open drain) –0.3 to +14 V
OH Per pin –10 mA
Total of all pins –30 mA
Total of all pins 220 mA
Note
stg –65 to +150 ˚C
˚C
Note When LCD is driven in normal mode: TA = –10 to +85˚C
Caution If any of the parameters exceeds the absolute maximum ratings, even momentarily, the reliability
of the product may be impaired. The absolute maximum ratings are values that may physically damage the products. Be sure to use the products within the ratings.
CAPACITANCE (T
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Input capacitance CIN f = 1 MHz 15 pF Output capacitance COUT Unmeasured pins returned to 0 V. 15 pF I/O capacitance CIO 15 pF
A = 25˚C, VDD = 0 V)
31
Page 32
µ
PD75P3116
MAIN SYSTEM CLOCK OSCILLATOR CHARACTERISTICS (TA = –40 to +85°C, VDD = 1.8 to 5.5 V)
Resonator Recommended constant Parameter Test conditions MIN. TYP. MAX. Unit
Note 2
Ceramic Oscillation 1.0
X1
resonator frequency (fx)
C1
Crystal Oscillation 1.0
X1
resonator frequency (fx)
C1
X2
Note 1
C2
V
DD
X2
C2
DD
V
Oscillation After VDD reaches oscil- 4 ms
Note 1
Note 3
lation voltage range MIN.
stabilization time
Oscillation VDD = 4.5 to 5.5 V 10 ms stabilization time
Note 3
External X1 input 1.0 clock frequency (fx)
X1
X2
Note 1
X1 input 83.3 500 ns high-/low-level width (tXH, tXL)
6.0
6.0
30
6.0
Note 2
Note 2
MHz
MHz
MHz
Notes 1. The oscillation frequency and X1 input frequency indicate characteristics of the oscillator only. For
the instruction execution time, refer to AC Characteristics.
2. When the power supply voltage is 1.8 V V
DD < 2.7 V and the oscillation frequency is 4.19 MHz < fx
6.0 MHz, setting the processor clock control register (PCC) to 0011 results in 1 machine cycle being less than the required 0.95 µs. Therefore, set PCC to a value other than 0011.
3. The oscillation stabilization time is necessary for oscillation to stabilize after applying V
DD or releasing
the STOP mode.
Caution When using the main system clock oscillator, wiring in the area enclosed with the dotted line should
be carried out as follows to avoid an adverse effect from wiring capacitance.
• Wiring should be as short as possible.
• Wiring should not cross other signal lines.
• Wiring should not be placed close to a varying high current.
• The potential of the oscillator capacitor ground should be the same as V
DD.
• Do not ground to a ground pattern in which a high current flows.
• Do not fetch a signal from the oscillator.
32
Page 33
µ
PD75P3116
SUBSYSTEM CLOCK OSCILLATOR CHARACTERISTICS (TA = –40 to +85˚C, VDD = 1.8 to 5.5 V)
Resonator Recommended constant Parameter Test conditions MIN. TYP. MAX. Unit Crystal Oscillation 32 32.768 35 kHz
XT1
resonator frequency (f
C3
XT2
R
C4
DD
V
Oscillation VDD = 4.5 to 5.5 V 1.0 2 s stabilization time
XT)
Note 1
Note 2
10 External XT1 input frequency 32 100 kHz clock (f
XT1
XT2
Note 1
XT)
XT1 input high-/low-level
515µs
width (tXTH, tXTL)
Notes 1. Indicates only oscillator characteristics. Refer to AC Characteristics for instruction execution time.
2. The oscillation stabilization time is necessary for oscillation to stabilize after applying V
DD.
Caution When using the subsystem clock oscillator, wiring in the area enclosed with the dotted line should
be carried out as follows to avoid an adverse effect from wiring capacitance.
• Wiring should be as short as possible.
• Wiring should not cross other signal lines.
• Wiring should not be placed close to a varying high current.
• The potential of the oscillator capacitor ground should be the same as V
DD.
• Do not ground to a ground pattern in which a high current flows.
• Do not fetch a signal from the oscillator.
The subsystem clock oscillator is designed as a low amplification circuit to provide low consumption current, and is more liable to misoperation by noise than the main system clock oscillation circuit. Special care should therefore be taken regarding the wiring method when the subsystem clock is used.
33
Page 34
DC CHARACTERISTICS (TA = –40 to +85˚C, VDD = 1.8 to 5.5 V)
Parameter Symbol Test conditions MIN. TYP. MAX. Unit
µ
PD75P3116
Output current low I
OL Per pin 15 mA
Total of all pins 150 mA
Input voltage high VIH1 Ports 2, 3, 8, and 9 2.7 VDD 5.5 V 0.7VDD VDD V
1.8 VDD < 2.7 V 0.9VDD VDD V
VIH2 Ports 0, 1, 6, RESET 2.7 VDD 5.5 V 0.8V DD V DD V
DD < 2.7 V 0.9V DD VDD V
1.8 V
VIH3 Port 5 2.7 VDD 5.5 V 0.7VDD 13 V
(N-ch open-drain) 1.8 VDD < 2.7 V 0.9VDD 13 V
VIH4 X1, XT1
VDD – 0.1
VDD V
Input voltage low VIL1 Ports 2, 3, 5, 8, and 9 2.7 VDD 5.5 V 0 0.3VDD V
DD < 2.7 V 0 0.1VDD V
1.8 V
VIL2 Ports 0, 1, 6, RESET 2.7 ≤ VDD 5.5 V 0 0.2VDD V
1.8 VDD < 2.7 V 0 0.1VDD V
VIL3 X1, XT1 0 0.1 V Output voltage high VOH Output voltage low V
OL1
SCK, SO, Ports 2, 3, 6, 8, and 9 IOH = –1.0 mA SCK, SO, Ports 2, 3, 5, 6, 8, and 9
IOL = 15 mA, 0.2 2.0 V VDD =
4.5 to 5.5 V
VDD – 0.5
IOL = 1.6 mA 0.4 V
VOL2 SB0, SB1 When N-ch open-drain 0.2VDD V
pull-up resistor 1 k
V
Input leakage I
LIH1 VIN = VDD Pins other than X1, XT1 3
current high ILIH2 X1, XT1 20
ILIH3 VIN = 13 V Port 5 (N-ch open-drain) 20 Input leakage ILIL1 VIN = 0 V Pins other than X1, XT1, and Port 5 –3 current low I LIL2 X1, XT1 –20
LIL3 Port 5 (N-ch open-drain) –3
I
µ µ µ µ µ µ
When another instruction than input instruction is executed
Port 5 (N-ch open-drain) –30
Output leakage ILOH1 VOUT = VDD current high I
LOH2 VOUT = 13 V Port 5 (N-ch open-drain) 20
When input instruction VDD = is executed VDD = SCK, SO/SB0, SB1, Ports 2, 3, 6, 8, and 9
5.0 V
3.0 V
–10 –27
–3 –8
Output leakage ILOL VOUT = 0 V –3
µ µ µ
3
µ µ µ
current low On-chip pull-up resistor RL VIN = 0 V Ports 0, 1, 2, 3, 6, 8, and 9 50 100 200 k
(Excluding P00 pin)
A A A A A A
A A A A A A
34
Page 35
µ
PD75P3116
DC CHARACTERISTICS (TA = –40 to +85˚C, VDD = 1.8 to 5.5 V)
Parameter Symbol Test conditions MIN. TYP. MAX. Unit
LCD drive voltage V
VAC current
Note 1
LCD output voltage VODC lo = ±1.0 µAVLCD0 = VLCD 0 ±0.2 V deviation
Note 2
(common) VLCD1 = VLCD x 2/3
LCD output voltage VODS lo = ±0.5 µAVLCD2 = VLCD x 1/3 0 ±0.2 V deviation
Supply current
Note 2
(segment) 1.8 V VLCD VDD
Note 3
LCD VAC0 = 0 TA = –40 to +85°C 2.7 VDD V
A = –10 to +85°C 2.2 VDD V
T
VAC0 = 1 1.8 VDD V
IVAC VAC0 = 1, VDD = 2.0 V ± 10% 1 4
IDD1 6.00 MHz
Crystal oscillation
IDD2
C1 = C2 = 22 pF
Note 4
VDD = 5.0 V ± 10% VDD = 3.0 V ± 10% HALT mode VDD = 5.0 V ± 10% 0.7 2.0 mA
Note 5
Note 6
3.2 9.5 mA
0.55 1.6 mA
VDD = 3.0 V ± 10% 0.25 0.8 mA
IDD1 4.19 MHz
Crystal oscillation
IDD2
C1 = C2 = 22 pF
Note 4
VDD = 5.0 V ± 10% VDD = 3.0 V ± 10% HALT mode VDD = 5.0 V ± 10% 0.65 1.8 mA
Note 5
Note 6
2.5 7.5 mA
0.45 1.35 mA
VDD = 3.0 V ± 10% 0.22 0.7 mA
IDD3 32.768 kHz
Crystal oscillation
IDD4 HALT mode
Note 7
Low-voltage VDD = 3.0 V ± 10% 45 130
Note 8
mode
VDD = 2.0 V ± 10% 20 55 VDD = 3.0 V, TA = 25˚C
Low power consumption
Note 9
mode
VDD = 3.0 V ± 10% 42 120 VDD = 3.0 V, TA = 25˚C Low-
voltage
VDD = 3.0 V ± 10% VDD = 2.0 V ± 10%
45 90
42 85
5.5 18
2.2 7
mode
IDD5 XT1 = 0 V
Note 8
Low power consump­tion mode
Note 10
VDD = 5.0 V ± 10% 0.05 10
Note 9
VDD = 3.0 V, TA = 25˚C VDD = 3.0 V ± 10% VDD = 3.0 V,
TA = 25˚C
5.5 12
4.0 12
4.0 8
STOP mode VDD = 3.0 V 0.02 5
± 10% TA = 25˚C 0.02 3
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
Notes 1. Set to VAC0 = 0 when the low power consumption mode and the stop mode are used. If VAC0 = 1
is set, the current increases for approx. 1 µA.
2. The voltage deviation is the difference from the output voltage corresponding to the ideal value of the segment and common outputs (VLCDn; n = 0, 1, 2).
3. Not including currents flowing in on-chip pull-up resistors.
4. Including oscillation of the subsystem clock.
5. When the processor clock control register (PCC) is set to 0011 and the device is operated in the high-
speed mode.
6. When PCC is set to 0000 and the device is operated in the low-speed mode.
7. When the system clock control register (SCC) is set to 1001 and the device is operated on the
subsystem clock, with main system clock oscillation stopped.
8. When the sub-oscillation circuit control register (SOS) is set to 0000.
9. When SOS is set to 0010.
10. When SOS is set to 00×1 and the feedback resistor of the sub-oscillation circuit is not used.
35
Page 36
AC CHARACTERISTICS (TA = –40 to +85˚C, VDD = 1.8 to 5.5 V)
Parameter Symbol Test conditions MIN. TYP. MAX. Unit
µ
PD75P3116
CPU clock cycle t
Note 1
time (Min. instruction execution time = 1 machine cycle) TI0, TI1, TI2 input fTI VDD = 2.7 to 5.5 V 0 1.0 MHz frequency 0 275 kHz TI0, TI1, TI2 input t high-/low-level width 1.8 Interrupt input high-/ low-level width IM02 = 1 10
RESET low-level width tRSL 10
Notes 1. The cycle time (minimum instruction
execution time) of the CPU clock (Φ) is determined by the oscillation frequency of the connected
CY Operating on VDD = 2.7 to 5.5 V 0.67 64
main system clock 0.95 64 Operating on subsystem clock 114 122 125
TIH, tTIL VDD = 2.7 to 5.5 V 0.48
tINTH, tINTL
INT0 IM02 = 0 Note 2
INT1, 2, 4 10 KR0 to KR7 10
t
CY vs VDD
(At main system clock operation)
64 60
resonator (and external clock), the system clock control register (SCC) and the processor clock control register (PCC). The figure at the right indicates the cycle time t
CY
6 5
4 3
Guaranteed Operation  Range
versus supply voltage VDD characteristic with the main system clock operating.
CY or 128/fx is set by setting the
2. 2t
2
Cycle Time tCY [µs]
interrupt mode register (IM0).
1
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
36
0.5 10 23456
Supply Voltage VDD [V]
Page 37
µ
PD75P3116
SERIAL TRANSFER OPERATION 2-Wire and 3-Wire Serial I/O Mode (SCK...Internal clock output): (TA = –40 to +85˚C, VDD = 1.8 to 5.5 V)
Parameter Symbol Test conditions MIN. TYP. MAX. Unit
SCK cycle time tKCY1 VDD = 2.7 to 5.5 V 1300 ns
3800 ns
SCK high-/low-level t
KL1, tKH1 VDD = 2.7 to 5.5 V
width
Note 1
SI
setup time tSIK1 VDD = 2.7 to 5.5 V 150 ns
tKCY1/2–50
tKCY1/2–150
(to SCK) 500 ns
Note 1
SI
hold time tKSI1 VDD = 2.7 to 5.5 V 400 ns
(from SCK) 600 ns
Note 1
SCK↓→SO delay time CL = 100 pF
output tKSO1 RL = 1 k,VDD = 2.7 to 5.5 V 0 250 ns
Note 2
0 1000 ns
Notes 1. In 2-wire serial I/O mode, read this parameter as SB0 or SB1 instead.
L and CL are the load resistance and load capacitance of the SO output lines, respectively.
2. R
2-Wire and 3-Wire Serial I/O Mode (SCK...External clock input): (T
Parameter Symbol Test conditions MIN. TYP. MAX. Unit
SCK cycle time tKCY2 VDD = 2.7 to 5.5 V 800 ns
SCK high-/low-level tKL2, tKH2 VDD = 2.7 to 5.5 V 400 ns width 1600 ns
Note 1
setup time tSIK2 VDD = 2.7 to 5.5 V 100 ns
SI (to SCK) 150 ns
Note 1
SI
hold time tKSI2 VDD = 2.7 to 5.5 V 400 ns
(from SCK) 600 ns
Note 1
SCK↓→SO delay time CL = 100 pF
output tKSO2 RL = 1 k,VDD = 2.7 to 5.5 V 0 300 ns
Note 2
A = –40 to +85˚C, VDD = 1.8 to 5.5 V)
3200 ns
0 1000 ns
ns ns
Notes 1. In 2-wire serial I/O mode, read this parameter as SB0 or SB1 instead.
L and CL are the load resistance and load capacitance of the SO output lines, respectively.
2. R
37
Page 38
SBI Mode (SCK...Internal clock output (master)): (TA = –40 to +85˚C, VDD = 1.8 to 5.5 V)
Parameter Symbol Test conditions MIN. TYP. MAX. Unit
µ
PD75P3116
SCK cycle time t
KCY3 VDD = 2.7 to 5.5 V 1300 ns
3800 ns SCK high-/low-level tKL3, tKH3 VDD = 2.7 to 5.5 V width
tKCY3/2–50
tKCY3/2–150
ns
ns SB0, 1 setup time tSIK3 VDD = 2.7 to 5.5 V 150 ns (to SCK) 500 ns SB0, 1 hold time (from SCK)
tKSI3 tKCY3/2 ns SCK↓→ SB0, 1 tKSO3 RL = 1 k,VDD = 2.7 to 5.5 V 0 250 ns output delay time CL = 100 pF
Note
0 1000 ns SCK↑→ SB0, 1 tKSB tKCY3 ns SB0, 1 ↓→SCK t
SBK tKCY3 ns
SB0, 1 low-level width tSBL tKCY3 ns SB0, 1 high-level width tSBH tKCY3 ns
Note RL and CL are the load resistance and load capacitance of the SB0 and SB1 output lines, respectively.
SBI Mode (SCK...External clock input (slave)): (T
Parameter Symbol Test conditions MIN. TYP. MAX. Unit
SCK cycle time tKCY4 VDD = 2.7 to 5.5 V 800 ns
SCK high-/low-level tKL4, tKH4 VDD = 2.7 to 5.5 V 400 ns
A = –40 to +85˚C, VDD = 1.8 to 5.5 V)
3200 ns
width 1600 ns SB0, 1 setup time t
SIK4 VDD = 2.7 to 5.5 V 100 ns
(to SCK) 150 ns SB0, 1 hold time (from SCK)
tKSI4 tKCY4/2 ns SCK↓→SB0, 1 output tKSO4 RL = 1 k,VDD = 2.7 to 5.5 V 0 300 ns delay time C
L = 100 pF
Note
0 1000 ns SCK↑→ SB0, 1 tKSB tKCY4 ns SB0, 1↓→ SCK t SBK tKCY4 ns SB0, 1 low-level width tSBL tKCY4 ns SB0, 1 high-level width tSBH tKCY4 ns
Note RL and CL are the load resistance and load capacitance of the SB0 and SB1 output lines, respectively.
38
Page 39
AC Timing Test Point (Excluding X1, XT1 Input)
µ
PD75P3116
Clock Timing
X1 Input
VIH (MIN.)
IL
(MAX.)
V
VOH (MIN.)
OL
(MAX.)
V
tXL
1/fX
1/fXT
tXH
V
IH IL
V
V
OH OL
V
(MIN.)
(MAX.)
(MIN.)
(MAX.)
V
DD–0.1 V
0.1 V
XT1 Input
TI0, TI1, TI2 Timing
TI0, TI1, TI2
tXTL
tXTH
V
DD–0.1 V
0.1 V
1/f
TI
t
TIL
t
TIH
39
Page 40
Serial Transfer Timing
3-wire serial I/O mode
SCK
tKCY1, 2
tKL1, 2 tKH1, 2
tSIK1, 2 tKSI1, 2
µ
PD75P3116
SI
SO
2-wire serial I/O mode
SCK
SB0, 1
tKSO1, 2
Input Data
tKL1, 2
tSIK1, 2
Output Data
tKCY1, 2
tKH1, 2
tKSI1, 2
40
tKSO1, 2
Page 41
Serial Transfer Timing
Bus release signal transfer
SCK
tKL3, 4
tKCY3, 4
tKH3, 4
µ
PD75P3116
SB0, 1
Command signal transfer
SCK
SB0, 1
tSBKtSBHtSBLtKSB
tKCY3, 4
tKL3, 4
tSBKtKSB
tKH3, 4
tSIK3, 4
tKSO3, 4
tSIK3, 4
tKSO3, 4
tKSI3, 4
tKSI3, 4
Interrupt input timing
INT0, 1, 2, 4
RESET input timing
tINTL tINTH
KR0 to 7
tRSL
RESET
41
Page 42
µ
DATA MEMORY STOP MODE LOW SUPPLY VOLTAGE DATA RETENTION CHARACTERISTICS
A = –40 to +85˚C)
(T
Parameter Symbol Test conditions MIN. TYP. MAX. Unit
PD75P3116
Release signal set time t
SREL 0
Oscillation stabilization tWAIT Release by RESET wait time
Note 1
Release by interrupt request
215/f
Note 2
X
µ
ms ms
s
Notes 1. The oscillation stabilization wait time is the time during which the CPU operation is stopped to prevent
unstable operation at the oscillation start.
2. Depends on the basic interval timer mode register (BTM) settings (See the table below).
BTM3 BTM2 BTM1 BTM0 Wait time
fx = at 4.19 MHz fx = at 6.0 MHz —0002 —0112 —1012 —1112
20
/fx (approx. 250 ms) 220/fx (approx. 175 ms)
17
/fx (approx. 31.3 ms) 217/fx (approx. 21.8 ms)
15
/fx (approx. 7.81 ms) 215/fx (approx. 5.46 ms)
13
/fx (approx. 1.95 ms) 213/fx (approx. 1.37 ms)
42
Page 43
Data Retention Timing (STOP Mode Release by RESET)
Internal Reset Operation
HALT mode
STOP Mode
Data Retention Mode
V
DD
t
SREL
STOP Instruction Execution
RESET
t
WAIT
Data Retention Timing (Standby Release Signal: STOP Mode Release by Interrupt Signal)
µ
PD75P3116
Operating Mode
V
DD
STOP Instruction Execution
Standby Release Signal (Interrupt Request)
STOP Mode
Data Retention Mode
t
SREL
HALT mode
t
WAIT
Operating Mode
43
Page 44
µ
PD75P3116
DC PROGRAMMING CHARACTERISTICS (TA = 25 ± 5˚C, VDD = 6.0 ± 0.25 V, VPP = 12.5 ± 0.3 V, VSS = 0 V)
Parameter Symbol Test conditions MIN. TYP. MAX. Unit
Input voltage high VIH1 Except X1 and X2 pins 0.7VDD V DD V
V
IH2 X1, X2 VDD–0.5 VDD V
Input voltage low VIL1 Except X1 and X2 pins 0 0.3VDD V
VIL2 X1, X2 0 0.4 V
Input leakage current I
LI VIN = VIL or VIH 10
µ
A Output voltage high VOH I OH = –1 mA VDD–1.0 V Output voltage low VOL IOL = 1.6 mA 0.4 V V
DD power supply current IDD 30 mA
VPP power supply current IPP MD0 = V IL, MD1 = VIH 30 mA
Cautions 1. Avoid exceeding +13.5 V for VPP including the overshoot.
DD must be applied before VPP, and cut after VPP.
2. V
AC PROGRAMMING CHARACTERISTICS (T
A = 25 ±5˚C, VDD = 6.0 ±0.25 V, VPP = 12.5 ±0.3 V, VSS = 0 V)
Parameter Symbol Note 1 Test conditions MIN. TYP. MAX. Unit
Address setup time
Note 2
(to MD0)tAS t AS 2 MD1 setup time (to MD0)tM1S tOES 2 Data setup time (to MD0)tDS tDS 2 Address hold time Data hold time (from MD0)t
Note 2
(from MD0)tAH tAH 2
DH tDH 2
MD0↑→data output float delay time tDF tDF 0 130 ns VPP setup time (to MD3)tVPS tVPS 2 V
DD setup time (to MD3)tVDS tVCS 2
Initial program pulse width tPW tPW 0.95 1.0 1.05 ms Additional program pulse width tOPW tOPW 0.95 21.0 ms MD0 setup time (to MD1)tM0S tCES 2 MD0↓→data output delay time t
DV tDV MD0 = MD1 = VIL 1
MD1 hold time (from MD0)tM1H tOEH tM1H+tM1R 50 µs2 MD1 recovery time (from MD0)tM1R tOR 2 Program counter reset time t
PCR –10
X1 input high-/low-level width tXH, tXL 0.125 X1 input frequency f X 4.19 MHz Initial mode set time t
I –2
MD3 setup time (to MD1)tM3S –2 MD3 hold time (from MD1)tM3H –2 MD3 setup time (to MD0)tM3SR Address Address
Note 2
data output delay time
Note 2
data output hold time
tDAD tACC
tHAD tOH MD3 hold time (from MD0)tM3HR MD3↓→data output float delay time t
DFR
During program memory read
2 During program memory read During program memory read During program memory read
0 130 ns
2 During program memory read
2
2
Notes 1.Corresponding symbol of µPD27C256A
2.The internal address signal is incremented by 1 at the rising edge of the fourth X1 input and is not
connected to a pin.
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
44
Page 45
Program Memory Write Timing
t
VPS
V
PP
V
PP
V
DD
t
VDS
VDD+1
V
DD
V
DD
X1
D0/P60 to D3/P60 D4/P50 to D7/P53
MD0/P30
MD1/P31
MD2/P32
MD3/P33
t
I
t
PCR
t
M3S
Data input
t
DS
t
t
M1S
µ
PD75P3116
t
XH
t
Data output
t
DH
PW
t
M1H
t
DVtDF
t
M1R
t
M0S
Data input
t
DS
t
OPW
XL
t
DH
t
AH
t
AS
Data input
t
M3H
Program Memory Read Timing
tVPS
VPP
VPP
VDD
VDD+1
VDD
VDD
X1
D0/P60 to D3/P60 D4/P50 to D7/P53
tI
MD0/P30
MD1/P31
tPCR
MD2/P32
tVDS
tXH
tXL
tHAD
tDAD
Data output Data output
tDV
tM3HR
tDFR
MD3/P33
tM3SR
45
Page 46

10. CHARACTERISTIC CURVES (REFERENCE VALUES)

I
DD
vs VDD(Main System Clock: 6.0-MHz Crystal Resonator)
10
5.0
1.0
0.5
µ
PD75P3116
(T
A
= 25°C)
PCC = 0011
PCC = 0010 PCC = 0001
PCC = 0000
Main system clock HALT mode + 32-kHz oscillation
(mA)
DD
0.1
Supply Current I
0.05
0.01
0.005
Subsystem clock operation mode (SOS.1 = 0)
Main system clock STOP mode + 32-kHz oscillation (SOS.1 = 0) and subsystem clock HALT mode (SOS.1 = 0)
Main system clock STOP mode + 32-kHz oscillation (SOS.1 = 1) and subsystem clock HALT mode (SOS.1 = 1)
XT1 XT2X1 X2
Crystal resonator
6.0 MHz
Crystal resonator
32.768 kHz
330 k
22 pF 22 pF 22 pF 22 pF
46
V
V
0.001 012345678
DD
Supply Voltage V
(V)
DD
DD
Page 47
10
5.0
1.0
0.5
IDD vs VDD (Main System Clock: 4.19-MHz Crystal Resonator)
PCC = 0011
PCC = 0010 PCC = 0001
PCC = 0000
Main system clock HALT mode + 32-kHz oscillation
µ
PD75P3116
(T
A = 25°C)
0.1
Supply Current IDD (mA)
0.05
0.01
0.005
22 pF 22 pF 22 pF 22 pF
0.001 012345678
Supply Voltage VDD (V)
Subsystem clock operation mode (SOS.1 = 0)
Subsystem clock HALT mode (SOS.1 = 0) and main system clock STOP mode + 32-kHz oscillation (SOS.1 = 0)
Main system clock STOP mode + 32-kHz oscillation (SOS.1 = 1) and subsystem mode (SOS.1 = 1)
Crystal resonator
4.19 MHz
XT1 XT2X1 X2
clock HALT
Crystal resonator
32.768 kHz
VDDVDD
330 k
47
Page 48

11. PACKAGE DRAWINGS

64 PIN PLASTIC QFP ( 14)
µ
PD75P3116
A B
48
49
64
F
1
G
H
M
I
P
N
NOTE
Each lead centerline is located within 0.15 mm (0.006 inch) of its true position (T.P.) at maximum material condition.
33
32
detail of lead end
C
D
S
Q
17
16
J
K
M
L
ITEM MILLIMETERS INCHES
A
B C D
F G H
I J K L
M N
17.6±0.4
14.0±0.2
14.0±0.2
17.6±0.4
1.0
1.0
0.35±0.10
0.15
0.8 (T.P.)
1.8±0.2
0.8±0.2
+0.10
0.15
–0.05
0.10
P 2.55 0.100
Q
0.1±0.1
S 2.85 MAX. 0.112 MAX.
5°±5°
P64GC-80-AB8-3
0.693±0.016
+0.009
0.551
–0.008
+0.009
0.551
–0.008
0.693±0.016
0.039
0.039
+0.004
0.014
–0.005
0.006
0.031 (T.P.)
0.071±0.008
+0.009
0.031
–0.008 +0.004
0.006
–0.003
0.004
0.004±0.004
48
Page 49
64 PIN PLASTIC LQFP ( 12)
µ
PD75P3116
A B
48
49
33
32
C
64
F
1
G
H I J
M
P
16
17
K
M
N
NOTE
Each lead centerline is located within 0.13 mm (0.005 inch) of its true position (T.P.) at maximum material condition.
L
detail of lead end
S
D
Q
ITEM MILLIMETERS INCHES
A 14.8±0.4 0.583±0.016 B 12.0±0.2 0.472
C 12.0±0.2 0.472
D
14.8±0.4
F
1.125
G
1.125
H 0.30±0.10 0.012
I
0.13
J
0.65 (T.P.)
K
1.4±0.2
L 0.6±0.2 0.024
M 0.15 0.006 N 0.10
P 1.4 0.055 Q
0.125±0.075 0.005±0.003
R
5°±5°
S
1.7 MAX.
R
  +0.009
+0.004
+0.008
+0.10 –0.05
–0.008 +0.009
–0.008
0.583±0.016
0.044
0.044
–0.005
0.005
0.026 (T.P.)
0.055±0.008 –0.009
+0.004 –0.003
0.004 
5°±5°
0.067 MAX.
P64GK-65-8A8-1
49
Page 50
µ
PD75P3116

12. RECOMMENDED SOLDERING CONDITIONS

The µPD75P3116 should be soldered and mounted under the conditions recommended in the table below. For details of recommended soldering conditions, refer to the information document Semiconductor Device
Mounting Technology Manual (C10535E).
For soldering methods and conditions other than those recommended below, contact an NEC Sales representative.
Table 12-1. Surface Mounting Type Soldering Conditions
µ
PD75P3116GC-AB8: 64-pin plastic QFP (14 x 14 mm, 0.8-mm pitch)
(1)
Soldering
Method
Infrared Package peak temperature: 235° C, Time: 30 seconds max. (at 210°C min.), IR35-00-3 reflow Number of times: Three times max.
VPS Package peak temperature: 215° C, Time: 40 seconds max. (at 200°C min.), VP15-00-3
Number of times: Three times max.
Wave soldering Solder temperature: 260° C max., Flow time: 10 seconds max., Number of WS60-00-1
times: Once, Preheating temperature: 120°C max. (Package surface temperature)
Partial heating Pin temperature: 300°C max., Time : 3 seconds max. (per device)
Soldering Conditions Symbol
Caution Use of more than one soldering method should be avoided (except for partial heating).
(2)
µ
PD75P3116GK-8A8: 64-pin plastic QFP (12 x 12 mm, 0.65-mm pitch)
Soldering
Method
Infrared reflow Package peak temperature: 235°C, IR35-107-2
Time: 30 seconds max. (at 210˚C min.), Number of times: Twice max., Number of days: 7 necessary at 125°C for 10 hours) <Precaution> Products other than those supplied in thermal-resistant tray (magazine, taping, and non-thermal-resistant tray) cannot be baked in their packs.
VPS Package peak temperature: 215° C, VP15-107-2
Time: 40 seconds max. (at 200°C min.), Number of times: Twice max., Number of days: 7 necessary at 125°C for 10 hours) <Precaution> Products other than those supplied in thermal-resistant tray (magazine, taping, and non-thermal-resistant tray) cannot be baked in their packs.
Wave soldering Soldering bath temperature: 260° C max., Time: 10 seconds max., WS 60-107-1
Number of times: Once Preheating temperature: 120°C max. (package surface temperature) Number of days: 7 10 hours)
Partial heating Pin temperature: 300°C max., Time: 3 seconds max. (per pin row)
Note
(after that, prebaking is necessary at 125°C for
Soldering Conditions Conditions
Note
(after that, prebaking is
Note
(after that, prebaking is
Recommended
Reference Code
Note Number of days after unpacking the dry pack. Storage conditions are 25°C and 65%RH max.
Caution Do not use different soldering methods together (however, partial heating can be performed with
other soldering methods.)
50
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APPENDIX A. FUNCTION LIST OF µPD75308B, 753108 AND 75P3116
µ
PD75P3116
Parameter
Program memory Mask ROM Mask ROM One-time PROM
Data memory 000H to 1FFH
CPU 75X Standard 75XL CPU Instruction When main system 0.95, 1.91, 15.3
execution clock is selected time
Stack SBS register None SBS.3 = 1: Mk I mode selection
Instruction BRA !addr1 Unavailable When Mk I mode : unavailable
I/O port CMOS input 8 8
LCD controller/driver
Timer 3 channels 5 channels
When subsystem 122 µs (during 32.768-kHz operation) clock is selected
Stack area 000H to 0FFH 000H to 1FFH Subroutine call instruc-
tion stack operation When Mk II mode : 3-byte stack
CALLA !addr1 When Mk II mode : available MOVT XA, @BCDE Available
MOVT XA, @BCXA BR BCDE BR BCXA
CALL !addr 3 machine cycles Mk I mode : 3 machine cycles
CALLF !faddr 2 machine cycles Mk I mode : 2 machine cycles
CMOS input/output 16 20 Bit port output 8 0 N-ch open-drain 8 4
input/output Total 40 32
µ
PD75308B
0000H to 1F7FH 0000H to 1FFFH 0000H to 3FFFH (8064 x 8 bits) (8192 x 8 bits) (16384 x 8 bits)
µ
s • 0.95, 1.91, 3.81, 15.3 µs (during 4.19-MHz operation)
(during 4.19-MHz operation)
2-byte stack When Mk I mode : 2-byte stack
Segment selection: 24/28/32 (can be changed to CMOS (can be changed to CMOS input/output port in input/output port in 4-unit; 4-unit; max. 8) max. 8)
Display mode selection: static, 1/2 duty (1/2 bias), 1/3 duty (1/2 bias), 1/3 duty (1/3 bias), 1/4 duty (1/3 bias)
On-chip split resistor for LCD driver can be specified by No on-chip split resistor using mask option. for LCD driver
• Basic interval timer: • Basic interval timer/watchdog timer: 1 channel 1 channel • 8-bit timer/event counter: 3 channels
• 8-bit timer/event counter: (can be used as 16-bit timer/event counter) 1 channel • Watch timer: 1 channel
• Watch timer: 1 channel
µ
PD753108
(512 x 4 bits)
• 0.67, 1.33, 2.67, 10.7 µs (during 6.0-MHz operation)
SBS.3 = 0: Mk II mode selection
Mk II mode: 4 machine cycles
Mk II mode: 3 machine cycles
Segment selection: 16/20/24 segments
µ
PD75P3116
51
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µ
PD75P3116
Parameter
Clock output (PCL) Φ, 524, 262, 65.5 kHz Φ, 524, 262, 65.5 kHz
BUZ output (BUZ) 2 kHz • 2, 4, 32 kHz
Serial interface 3 modes are available
SOS register Feedback resistor None Contained
cut flag (SOS.0) Sub-oscillation circuit None Contained
current cut flag (SOS.1) Register bank selection register (RBS) None Yes Standby release by INT0 No Yes Vectored interrupt External: 3, Internal: 3 External: 3, Internal: 5 Supply voltage V Operating ambient temperature T Package • 80-pin plastic QFP • 84-pin plastic QFP (14 x 14 mm, 0.8-mm pitch)
µ
PD75308B
(Main system clock: (Main system clock: during 4.19-MHz operation) during 4.19-MHz Φ, 750, 375, 93.8 kHz operation) (Main system clock: during 6.0-MHz operation)
(Main system clock: (Main system clock: during 4.19-MHz operation or during 4.19-MHz operation) subsystem clock: during 32.768-kHz operation)
• 3-wire serial I/O mode ··· MSB/LSB can be selected for transfer first bit
• 2-wire serial I/O mode
• SBI mode
DD = 2.0 to 6.0 V VDD = 1.8 to 5.5 V A = –40 to +85°C
(14 x 20 mm) • 64-pin plastic QFP (12 x 12 mm, 0.65-mm pitch)
• 80-pin plastic QFP (14 x 14 mm)
• 80-pin plastic TQFP (Fine pitch) (12 x 12 mm)
µ
PD753108
• 2.93, 5.86, 46.9 kHz (Main system clock: 6.0-MHz operation)
µ
PD75P3116
52
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µ
PD75P3116

APPENDIX B. DEVELOPMENT TOOLS

The following development tools have been provided for system development using the µPD75P3116. In the 75XL series, a common relocatable assembler is used in combination with a device file dedicated to each model.
RA75X relocatable assembler Host machine Part No. (name)
OS Supply medium
PC-9800 Series MS-DOS
IBM PC/AT or compatibles IBM PCs 5" 2HC
Device file Host machine Part No. (name)
PC-9800 Series MS-DOS 3.5" 2HD
IBM PC/AT Refer to OS for 3.5" 2HC or compatibles IBM PCs 5" 2HC
TM
Refer to OS for 3.5" 2HC
OS Supply medium
TM
Ver.3.30 to 5" 2HD
Note
Ver.6.2
Ver.3.30 to 5" 2HD
Note
Ver.6.2
3.5" 2HD
µ
S5A13RA75X
µ
S5A10RA75X
µ
S7B13RA75X
µ
S7B10RA75X
µ
S5A13DF753108
µ
S5A10DF753108
µ
S7B13DF753108
µ
S7B10DF753108
Note Ver. 5.00 and later include a task swapping function, but this function cannot be used in this software.
Remark Operation of the assembler and device file is guaranteed only when using the host machine and OS described
above.
53
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µ
PD75P3116
PROM Write Tools
Hardware PG-1500 This is a PROM writer that can program single-chip microcontroller with PROM in stand-alone
mode or under control of host machine when connected with supplied accessory board and optional programmer adapter. It can also program typical PROMs in capacities ranging from 256 K to 4 M bits.
PA-75P3116BGC This is a PROM programmer adapter for the µPD75P3116GC.
It can be used when connected to a PG-1500.
PA-75P3116BGK This is a PROM programmer adapter for the
It can be used when connected to a PG-1500.
Software PG-1500 controller Connects PG-1500 to host machine with serial and parallel interface and controls PG-1500 on
host machine. Host machine Part No. (name)
OS Supply medium
PC-9800 Series MS-DOS 3.5" 2HD
Ver.3.30 to 5" 2HD
Note
Ver.6.2 IBM PC/AT Refer to OS for 3.5" 2HD or compatible IBM PCs 5" 2HC
µ
PD75P3116GK.
µ
S5A13PG1500
µ
S5A10PG1500
µ
S7B13PG1500
µ
S7B10PG1500
Note Ver. 5.00 and later include a task swapping function, but this function cannot be used in this software.
Remark Operation of the PG-1500 controller is guaranteed only when using the host machine and OS described above.
54
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µ
PD75P3116
Debugging Tools
In-circuit emulators (IE-75000-R and IE-75001-R) are provided as program debugging tools for the µPD75P3116. Various system configurations using these in-circuit emulators are listed below.
Hardware IE-75000-R
IE-75001-R The IE-75001-R is an in-circuit emulator to be used for hardware and software debugging during
IE-75300-R-EM This is an emulation board for evaluating application systems using the
EP-753108GC-R This is an emulation probe for the
EP-753108GK-R This is an emulation probe for the
Software IE control program This program can control the IE-75000-R or IE-75001-R on a host machine when connected to
Note 1
EV-9200GC-64 It includes a 64-pin conversion socket (EV-9200GC-64) to facilitate connections
TGK-064SBW It includes a 64-pin conversion adapter (TGK-064SBW) to facilitate connections with target
Note 2
The IE-75000-R is an in-circuit emulator to be used for hardware and software debugging during development of application systems using the 75X or 75XL Series products. For development of the µPD753108 Subseries, the IE-75000-R is used with optional emulation board (IE-75300-R-EM) and emulation probe (EP-753108GC-R or EP-753108GK-R). Highly efficient debugging can be performed when connected to host machine and PROM programmer. The IE-75000-R includes a connected emulation board (IE-75000-R-EM).
development of application systems using the 75X or 75XL Series products. The IE-75001-R is used in combination with optional emulation board (IE-75300-R-EM) and emulation probe (EP-753108GC-R or EP-753108GK-R). Highly efficient debugging can be performed when connected to host machine and PROM programmer.
µ
PD75P3116.
It is used in combination with the IE-75000-R or IE-75001-R.
µ
PD75P3116GC.
When being used, it is connected with the IE-75000-R or IE-75001-R and the IE-75300-R-EM.
with target system.
µ
PD75P3116GK.
When being used, it is connected with the IE-75000-R or IE-75001-R and the IE-75300-R-EM.
system.
the IE-75000-R or IE-75001-R via an RS-232C or Centronics interface. Host machine Part No. (name)
OS Supply medium
PC-9800 Series MS-DOS 3.5" 2HD
Ver.3.30 to 5" 2HD
Note 3
Ver.6.2 IBM PC/AT Refer to OS for 3.5" 2HC or compatible IBM PCs 5" 2HC
µ
S5A13IE75X
µ
S5A10IE75X
µ
S7B13IE75X
µ
S7B10IE75X
Notes 1. This is a maintenance product.
2. Made by TOKYO ELETECH Corporation (Tokyo, 03-5295-1661).
Contact to an NEC sales representative for detailed information.
3. Ver. 5.00 and later include a task swapping function, but this function cannot be used in this software.
Remarks 1. Operation of the IE control program is guaranteed only when using the host machine and OS
described above.
µ
2. The
PD753104, 753106, 753108, and 75P3116 are generically called the µPD753108 Subseries.
55
Page 56
µ
PD75P3116
OS for IBM PCs
The following operating systems for the IBM PC are supported.
OS Version
PC DOS
TM
Ver.3.1 to 6.3, J6.1/V
MS-DOS Ver.5.0 to 6.2
Note
IBM DOS
5.0/V
TM
J5.02/V
to 6.2/V
Note
Note Only English mode is supported.
Caution Ver. 5.0 and later include a task swapping function, but this function cannot be used in this software.
Note
Note
to J6.3/V
Note
56
Page 57
µ
PD75P3116

APPENDIX C. RELATED DOCUMENTS

The related documents indicated in this publication may include preliminary versions. However, preliminary
versions are not marked as such.
Device Related Documents
Document Name
µ
PD753104, 753106, and 753108 Data Sheet U10086E U10086J
µ
PD75P3116 Data Sheet
µ
PD753108 User’s Manual U10890E U10890J
µ
PD753108 Instruction Table IEM-5600
75XL Series Selection Guide U10453E U10453J
U11369E (This document)
Document No.
English Japanese
U11369J
Development Tool Related Documents
Document Name
Hardware IE-75000-R/IE-75001-R User’s Manual EEU-1416 EEU-846
IE-75300-R-EM User’s Manual U11354E U11354J EP-753108GC/GK-R User’s Manual EEU-1495 EEU-968 PG-1500 User’s Manual EEU-1335 U11940J
Software RA75X Assembler Package Operation EEU-1346 EEU-731
User’s Manual Language EEU-1363 EEU-730 PG-1500 Controller User’s Manual PC-9800 series EEU-1291 EEU-704
(MS-DOS) base
Document No.
English Japanese
IBM PC series U10540E EEU-5008 (PC DOS) base
Other Related Documents
Document Name
IC Package Manual C10943X Semiconductor Device Mounting Technology Manual C10535E C10535J Quality Grades on NEC Semiconductor Devices C11531E C11531J NEC Semiconductor Device Reliability/Quality Control System C10983E C10983J Electrostatic Discharge (ESD) Test MEM-539 Guide to Quality Assurance for Semiconductor Devices MEI-1202 C11893J Microcontroller-related Product Guide Third Party’s Product U11416J
Caution The above related documents are subject to change without notice. For design purposes, etc.,
be sure to use the latest versions.
Document No.
English Japanese
57
Page 58
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note: Strong electric field, when exposed to a MOS device, can cause destruction of
the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it.
µ
PD75P3116
2 HANDLING OF UNUSED INPUT PINS FOR CMOS
Note: No connection for CMOS device inputs can be cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note: Power-on does not necessarily define initial status of MOS device. Production
process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function.
58
Page 59
µ
PD75P3116
Regional Information
Some information contained in this document may vary from country to country. Before using any NEC product in your application, please contact the NEC office in your country to obtain a list of authorized representatives and distributors. They will verify:
• Device availability
• Ordering information
• Product release schedule
• Availability of related technical literature
• Development environment specifications (for example, specifications for third-party tools and components, host computers, power plugs, AC supply voltages, and so forth)
• Network requirements
In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary from country to country.
NEC Electronics Inc. (U.S.)
Santa Clara, California Tel: 800-366-9782 Fax: 800-729-9288
NEC Electronics (Germany) GmbH
Duesseldorf, Germany Tel: 0211-65 03 02 Fax: 0211-65 03 490
NEC Electronics (Germany) GmbH
Benelux Office Eindhoven, The Netherlands Tel:040-2445845 Fax: 040-2444580
NEC Electronics (France) S.A.
Velizy-Villacoublay, France Tel:01-30-67 58 00 Fax: 01-30-67 58 99
NEC Electronics Hong Kong Ltd.
Hong Kong Tel:2886-9318 Fax: 2886-9022/9044
NEC Electronics Hong Kong Ltd.
Seoul Branch Seoul, Korea Tel: 02-528-0303 Fax: 02-528-4411
NEC Electronics (UK) Ltd.
Milton Keynes, UK Tel: 01908-691-133 Fax: 01908-670-290
NEC Electronics Italiana s.r.1.
Milano, Italy Tel: 02-66 75 41 Fax: 02-66 75 42 99
NEC Electronics (France) S.A.
Spain Office Madrid, Spain Tel: 01-504-2787 Fax: 01-504-2860
NEC Electronics (Germany) GmbH
Scandinavia Office Taeby, Sweden Tel: 08-63 80 820 Fax: 08-63 80 388
NEC Electronics Singapore Pte. Ltd.
United Square, Singapore 1130 Tel:253-8311 Fax: 250-3583
NEC Electronics Taiwan Ltd.
Taipei, Taiwan Tel: 02-719-2377 Fax: 02-719-5951
NEC do Brasil S.A.
Sao Paulo-SP, Brasil Tel: 011-889-1680 Fax: 011-889-1689
J96. 8
59
Page 60
µ
PD75P3116
QTOP is a trademark of NEC Corporation. MS-DOS is a trademark of Microsoft Corporation. IBM DOS, PC/AT, and PC DOS are trademarks of International Business Machines Corporation.
The export of this product from Japan is regulated by the Japanese government. To export this product may be prohibited without governmental license, the need for which must be judged by the customer. The export or re­export of this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
60
M4 96.5
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