DATA SHEET
MOS FIELD EFFECT TRANSISTOR
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PA1853
µµµµ
DESCRIPTION
The µPA1853 is a switching device which can be
driven directly by a 4
The
PA1853 features a low on-state resistance and
µ
-
V power source.
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 4-V power source
•
Low on-state resistance
•
DS(on)1
R
= 85 mΩ MAX. (VGS = –10 V, ID = –1.5 A)
★
★
DS(on)2
R
= 152 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
DS(on)3
R
= 180 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
PA1853GR-9JG Power TSSOP8
µ
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation
Note1
Note2
Channel Temperature T
Storage Temperature T
Notes 1.
PW ≤ 10
2.
Mounted on ceramic substrate of 5000
s, Duty Cycle ≤ 1 %
µ
DSS
GSS
D(DC)
D(pulse)
I
P
ch
stg
–20/+5 V
T
–55 to +150 °C
–30 V
# 2.5
# 10
2.0 W
150 °C
mm2 x 1.1 mm
PACKAGE DRAWING (Unit : mm)
85
14
3.15 ±0.15
3.0 ±0.1
0.65
+0.03
0.27
–0.08
A
A
Gate1
Gate
Protection
Diode
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
±0.055
0.145
0.8 MAX.
0.10 M
EQUIVALENT CIRCUIT
Drain1
Body
Diode
Source1
1.2 MAX.
1.0±0.05
3°
0.1±0.05
6.4 ±0.2
4.4 ±0.1
Gate2
Gate
Protection
Diode
+5°
–3°
0.5
0.6
Drain2
Source2
0.25
+0.15
–0.1
1.0 ±0.2
0.1
Body
Diode
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D12968EJ1V0DS00 (1st edition)
Date Published October 1999 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
1997, 1999
★
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
µµµµ
PA1853
Drain Cut-off Current I
Gate Leakage Current I
Gate Cut-off Voltage V
DSS
VDS = –30 V, VGS = 0 V –10
VGS = #20 V, VDS = 0 V
GSS
GS(off)VDS
µ
10
µ
#
= –10 V, ID = –1 mA –1.0 –1.7 –2.5 V
A
A
Forward Transfer Admittance | yfs |VDS = –10 V, ID = –1.5 A13.6S
Drain to Source On-state Resi stance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
DS(on)1VGS
DS(on)2VGS
R
DS(on)3VGS
R
iss
oss
rss
d(on)
r
d(off)
f
G
GS
GD
F(S-D)IF
= –10 V, ID = –1.5 A6485m
= –4.5 V, ID = –1.5 A 114 152 m
= –4.0 V, ID = –1.5 A 135 180 m
Ω
Ω
Ω
VDS = –10 V 520 pF
VGS = 0 V 200 pF
f = 1 MHz 82 pF
VDD = –10 V60ns
ID = –1.5 A 220 ns
GS(on)
V
= –10 V 800 ns
RG = 10
Ω
620 ns
VDD = –24 V12nC
ID = –2.5 A 2 nC
VGS = –10 V 3 nC
= 2.5 A, VGS = 0 V0.73V
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
IG = 2 mA
50 Ω
D.U.T.
R
L
V
DD
PG.
V
GS
RG = 10 Ω
0
τ
τ = 1 s
µ
Duty Cycle ≤ 1 %
R
G
D.U.T.
V
L
R
V
Wave Form
V
DD
I
D
Wave Form
GS
GS
0
10 %
V
GS(on)
90 %
PG.
0
10 %
t
d(on)
90 %
t
on
90 %
I
D
t
r
t
d(off)
10 %
t
f
t
off
D
I
2
Data Sheet D12968EJ1V0DS00
★
TYPICAL CHARACTERISTICS (TA = 25°C)
µµµµ
PA1853
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
30
TA - Ambient Temperature -
−10
Pulsed
−8
−6
−4
- Drain Current - A
D
I
−2
60
90
120
˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= −10 V
− 4.5 V
−4.0 V
150
FORWARD BIAS SAFE OPERATING AREA
−100
−10
R
DS(on)
(@V
Limited
−10
=
GS
−1
- Drain Current - A
D
I
−0.1
Single Pulse
Mounted on Ceramic
Substrate of 5000mm x 1.1mm
D
(FET1) : PD(FET2) = 1:1
P
−0.01
−0.1
V
DS
−10
TRANSFER CHARACTERISTICS
VDS = −10 V
−1
−0.1
−0.01
- Drain Current - A
D
I
−0.001
I
D
(pulse)
V)
I
D
(
DC
)
2
−1.0
PW
10
ms
100 ms
DC
−10.0 −100.0
- Drain to Source Voltage - V
= 125 ˚C
A
T
75 ˚C
25 ˚C
˚C
−25
=
1
ms
0
−0.20
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−0.4
V
DS
- Drain to Source Voltage - V
−0.6
−2
−1.8
−1.6
−1.4
−1.2
- Gate to Source Cut-off Voltage - V
GS(off)
−1
V
−50
ch
- Channel Temperature - ˚C
T
50 1000
−0.8 −1
V
DS
= −10 V
I
D
= −1 mA
150
−0.0001
0
−1.0 −2.0
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
100
10
1
| - Forward Transfer Admittance - S
fs
| y
0.1
−0.1
ID - Drain Current - A
−3.0
V
TA = −25 ˚C
25 ˚C
75 ˚C
125 ˚C
−10 −100−1
DS
= −10 V
−4.0
Data Sheet D12968EJ1V0DS00
3
µµµµ
PA1853
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
250
GS
= −4.0 V
V
200
TA = 125˚C
150
100
- Drain to Source On-state Resistance - mΩ
DS(on)
R
50
−
0.1
75˚C
25˚C
−25˚C
−
1
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
140
VGS = −10 V
120
100
TA = 125˚C
75˚C
80
25˚C
60
−
25˚C
40
- Drain to Source On-state Resistance - mΩ
20
DS(on)
R
−0.1
−1
D
- Drain Current - A
I
−10 −100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
VGS = −4.5 V
250
200
150
100
TA = 125˚C
75˚C
25˚C
−25˚C
50
- Drain to Source On-State Resistance - mΩ
0
−0.1
−
10
DS(on)
R
−1
I
D
- Drain Current - A
−10 −100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
ID = −1.5 A
V
GS
= −4.0 V
150
−4.5 V
100
−10 V
50
- Drain to Source On-state Resistance - mΩ
0
DS (on)
−50
R
0 50 100 150
ch
- Channel Temperature -˚C
T
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
300
ID = −1.5 A
250
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
f = 1 MHz
iss
200
C
150
100
oss
C
rss
100
50
- Drain to Source On-state Resistance - mΩ
DS (on)
R
0
0
−
5
−
10
−
15
−
20
Ciss, Coss, Crss - Capacitance - pF
10
−1 −10 −100
V
DS
- Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
4
Data Sheet D12968EJ1V0DS00
µµµµ
PA1853
SWITCHING CHARACTERISTICS
10000
V
DD
= −10V
GS
(on) = −10V
V
R
G
= 10Ω
1000
tf
td
(off)
tr
, tf - Swwitchig Time - ns
(off)
100
td
(on)
, tr, td
(on)
td
10
−0.1 −1 −10
I
D
- Drain Current - A
DYNAMIC INPUT CHARACTERISTICS
−10
ID = -2.5 A
−8
VDD = -24V
−6
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
1
0.1
0.01
0.001
IF - Source to Drain Current - A
0.0001
0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
VGS = 0 V
−4
VGS - Gate to Source Voltage - V
−2
0
0
QG - Gate Charge - nC
1000
100
10
1
- Transient Thermal Resistance - ˚C/W
th(t)
r
0.1
846210
12
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Mounted on Ceramic Substrate
of 5000mm x 1.1mm
Single Pulse
D
P
2
(FET1) : PD(FET2) = 1:1
11m 10m 100m 10 100 1000
PW - Pulse Width - S
62.5
˚C/W
Data Sheet D12968EJ1V0DS00
5
[MEMO]
µµµµ
PA1853
6
Data Sheet D12968EJ1V0DS00
[MEMO]
µµµµ
PA1853
Data Sheet D12968EJ1V0DS00
7
µµµµ
PA1853
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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