Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PA1852
µµµµ
DESCRIPTION
The µPA1852 is a switching device which can be
driven directly by a 2.5
The
PA1852 features a low on-state resistance and
µ
-
V power source.
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 2.5-V power source
•
Low on-state resistance
•
DS(on)1
R
= 40 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
DS(on)2
R
= 45 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
DS(on)3
R
= 60 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
Built-in G-S protection diode against ESD
•
ORDERING INFORMATION
PART NUMBER PACKAGE
PA1852GR-9JG Power TSSOP8
µ
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation
Note1
Note2
Channel Temperature T
Storage Temperature T
Notes 1.
PW ≤ 10
2.
Mounted on ceramic substrate of 5000
s, Duty Cycle ≤ 1 %
µ
DSS
GSS
D(DC)
D(pulse)
I
P
ch
stg
T
–55 to +150 °C
20 V
12 V
±
6.0 A
±
24
±
2.0 W
150 °C
mm2 x 1.1 mm
PACKAGE DRAWING (Unit : mm)
85
14
3.15 ±0.15
3.0 ±0.1
0.65
+0.03
0.27
–0.08
A
Gate1
Gate
Protection
Diode
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
±0.055
0.145
0.8 MAX.
0.10 M
EQUIVALENT CIRCUIT
Drain1
Body
Diode
Source1
1.2 MAX.
1.0±0.05
3°
0.1±0.05
6.4 ±0.2
4.4 ±0.1
Gate2
Gate
Protection
Diode
+5°
–3°
0.5
0.6
Drain2
Source2
0.25
+0.15
–0.1
1.0 ±0.2
0.1
Body
Diode
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D12803EJ1V0DS00 (1st edition)
Date Published October 1999 NS CP(K)
Printed in Japan
©
1997, 1999
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
µµµµ
PA1852
Drain Cut-off Current I
Gate Leakage Current I
Gate Cut-off Voltage V
DSS
VDS = 20 V, VGS = 0 V10
VGS = ±12 V, VDS = 0 V
GSS
GS(off)VDS
µ
10
±
µ
= 10 V, ID = 1 mA 0.5 0.74 1.5 V
A
A
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 3.0 A110S
Drain to Source On-state Resi stance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DS(on)1VGS
DS(on)2VGS
R
DS(on)3VGS
R
iss
oss
rss
d(on)
r
d(off)
f
G
GS
GD
F(S-D)IF
rr
rr
= 4.5 V, ID = 3.0 A2940m
= 4.0 V, ID = 3.0 A3145m
= 2.5 V, ID = 3.0 A3960m
Ω
Ω
Ω
VDS = 10 V 420 pF
VGS = 0 V 265 pF
f = 1 MHz 120 pF
VDD = 10 V55ns
ID = 1.5 A 160 ns
GS(on)
V
= 4.0 V 385 ns
RG = 10
Ω
355 ns
VDD = 10 V6nC
ID = 6.0 A2nC
VGS = 4.0 V3nC
= 6.0 A, VGS = 0 V0.74V
IF = 6.0 A, VGS = 0 V20ns
di/dt = 15 A /
s2nC
µ
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
IG = 2 mA
50 Ω
D.U.T.
R
L
V
DD
PG.
V
GS
RG = 10 Ω
0
τ
τ = 1 s
µ
Duty Cycle ≤ 1 %
R
G
D.U.T.
V
L
R
V
Wave Form
V
DD
I
D
Wave Form
GS
GS
0
10 %
V
GS(on)
90 %
PG.
90 %
D
I
10 %
0
t
r
t
d(on)
t
on
90 %
I
D
t
d(off)
10 %
t
f
t
off
2
Data Sheet D12803EJ1V0DS00
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
µµµµ
PA1852
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
30
60
TA - Ambient Temperature -
DRAIN CURRENT vs.
25
DRAIN TO SOURCE VOLTAGE
20
15
10
- Drain Current - A
D
I
5
V
90
GS
= 4.5 V
120
˚C
4.0 V
2.5 V
150
FORWARD BIAS SAFE OPERATING AREA
100
Limited
4.5
=
10
DS(on)
GS
R
(@V
1
- Drain Current - A
D
I
0.1
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1mm
D
(FET1) : PD(FET2) = 1:1
P
0.01
0.1
V
DS
TRANSFER CHARACTERISTICS
100
V
DS
= 10 V
10
1
0.1
- Drain Current - A
D
I
0.01
I
D
(pulse)
V)
I
D
(
DC
)
2
1.0
PW
=
1
ms
10
ms
100 ms
DC
10.0 100.0
- Drain to Source Voltage - V
= 125 ˚C
A
T
75 ˚C
25 ˚C
˚C
−25
0
0.20
V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.5
V
DS
= 10 V
I
D
= 1 mA
0.4
DS
- Drain to Source Voltage - V
0.6
1
0.5
- Gate to Source Cut-off Voltage - V
GS(off)
0
V
−50
T
ch
- Channel Temperature - ˚C
50 1000
0.8 1
150
0.001
01234
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
100
V
DS
= 10 V
TA = −25 ˚C
10
25 ˚C
75 ˚C
125 ˚C
1
| - Forward Transfer Admittance - S
fs
| y
0.1
0.1
1
ID - Drain Current - A
10 100
Data Sheet D12803EJ1V0DS00
3
Page 4
µµµµ
PA1852
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
V
GS
= 2.5 V
70
60
50
40
TA = 125˚C
75˚C
25˚C
−25˚C
30
- Drain to Source On-State Resistance - mΩ
20
DS(on)
R
0.1
1
D
- Drain Current - A
I
10 100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
V
GS
= 4.5 V
50
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
V
GS
= 4.0 V
50
TA = 125˚C
40
30
- Drain to Source On-State Resistance - mΩ
20
DS(on)
R
0.1
75˚C
25˚C
−25˚C
1
D
- Drain Current - A
I
10 100
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
ID = 3.0 A
60
V
GS
= 2.5 V
TA = 125˚C
40
75˚C
25˚C
−25˚C
1
- Drain Current - A
10 100
- Drain to Source On-State Resistance - mΩ
DS(on)
R
30
20
0.1
D
I
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
ID = 3.0 A
60
40
20
- Drain to Source On-state Resistance - mΩ
DS (on)
0
R
4
2
6
81210
VGS - Gate to Source Voltage - V
40
20
- Drain to Source On-state Resistance - mΩ
0
DS (on)
R
−50
1000
0 50 100 150
ch
- Channel Temperature -˚C
T
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
Ciss, Coss, Crss - Capacitance - pF
10
0.1
1 10 100
V
DS
- Drain to Source Voltage - V
4.0 V
4.5 V
f = 1
C
iss
C
oss
C
rss
MHz
4
Data Sheet D12803EJ1V0DS00
Page 5
µµµµ
PA1852
SWITCHING CHARACTERISTICS
1000
100
, tf - Swwitchig Time - ns
(off)
, tr, td
V
DD
10
V
0.1
= 10V
GS
(on) = 4.0V
R
G
= 10Ω
1
I
D
- Drain Current - A
(on)
td
DYNAMIC INPUT CHARACTERISTICS
6
ID = 6.0 A
5
VDD = 10 V
4
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
tr
tf
td
(off)
1
0.1
td
(on)
0.01
0.001
IF - Source to Drain Current - A
GS
= 0 V
10010
0.0001
0.4 0.6 0.8 1
V
VF(S-D) - Source to Drain Voltage - V
3
2
VGS - Gate to Source Voltage - V
1
0
0
QG - Gate Charge - nC
1000
100
10
1
- Transient Thermal Resistance - ˚C/W
th(t)
r
0.1
8462
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Mounted on Ceramic Substrate
2
of 50cm x 1.1mm
Single Pulse
D
(FET1) : PD(FET2) = 1:1
P
11m 10m 100m 10 100 1000
PW - Pulse Width - S
62.5
˚C/W
Data Sheet D12803EJ1V0DS00
5
Page 6
[MEMO]
µµµµ
PA1852
6
Data Sheet D12803EJ1V0DS00
Page 7
[MEMO]
µµµµ
PA1852
Data Sheet D12803EJ1V0DS00
7
Page 8
µµµµ
PA1852
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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