Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PA1811
µµµµ
DESCRIPTION
The µPA1811 is a switching device which can be
driven directly by a 2.5-V power source.
The µPA1811 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 2.5-
•
Low on-state resistance
•
DS(on)1
R
= 75 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A)
DS(on)2
R
= 80 mΩ MAX. (VGS = –4.0 V, ID = –2.0 A)
DS(on)3
R
= 120 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A)
V power source
ORDERING INFORMATION
PART NUMBER PACKAGE
PA1811GR-9JG Power TSSOP8
µ
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V
Gate to Source Voltage V
••••
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation
Channel Temperature T
Storage Temperature T
Note1
Note2
DSS
GSS
D(DC)
D(pulse)
I
P
ch
stg
−
T
–55 to +150 °C
PACKAGE DRAWING (Unit : mm)
85
14
3.15 ±0.15
3.0 ±0.1
0.65
0.27
–20 V
12/+6 V
±4.0 A
±16 A
2.0 W
150 °C
+0.03
–0.08
0.8 MAX.
1, 5, 8 :Drain
2, 3, 6, 7: Source
4 :Gate
±0.055
0.145
0.10 M
1.2 MAX.
1.0±0.05
0.25
+5°
3°
–3°
0.1±0.05
6.4 ±0.2
4.4 ±0.1
0.5
0.6
1.0 ±0.2
0.1
EQUIVALENT CIRCUIT
Drain
Body
Gate
Gate
Protection
Diode
Source
Diode
+0.15
–0.1
Notes 1.
Remark
PW ≤ 10 µs, Duty Cycle ≤ 1 %
2.
Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11820EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark
••••
shows major revised points.
©
1996, 2000
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
µµµµ
PA1811
Zero Gate Voltage Drain Current I
Gate Leakage Current I
••••
Gate Cut-off Voltage V
••••
Forward Transfer Admittance | yfs |VDS = –10 V, ID = –2.0 A2.56.8S
Drain to Source On-state Resi stance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DSS
GSS
GS(off)VDS
DS(on)1VGS
DS(on)2VGS
R
DS(on)3VGS
R
iss
oss
rss
d(on)
r
d(off)
f
G
GS
GD
F(S-D)IF
rr
rr
VDS = –20 V, VGS = 0 V –10
VGS = ±12 V, VDS = 0 V±10
A
µ
A
µ
= –10 V, ID = –1 mA –0.5 –0.9 –1.5 V
= –4.5 V, ID = –2.0 A4275m
= –4.0 V, ID = –2.0 A4680m
= –2.5 V, ID = –2.0 A 73 120 m
Ω
Ω
Ω
VDS = –10 V 1160 pF
VGS = 0 V 680 pF
f = 1 MHz 210 pF
VDD = –10 V40ns
ID = –2.0 A 100 ns
GS(on)
V
= –4.0 V90ns
RG = 5
Ω
60 ns
VDD = –10 V36nC
ID = –4.0 A5nC
VGS = –4.0 V16nC
= 4.0 A, VGS = 0 V0.74V
IF = 4.0 A, VGS = 0 V
di/dt = 100 A/
S
µ
77 ns
69 nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
L
R
R
PG.
GS
(−)
V
0
τ = 1 s
µ
Duty Cycle ≤ 1 %
G
V
DD
τ
V
GS
Wave Form
I
D
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
V
GS
(−)
10 %
0
I
90 %
D
(−)
10 %
0
t
d(on)
r
t
on
t
90 %
V
GS
(on)
PG.
90 %
I
D
t
d(off)
10 %
t
f
t
off
IG = −2 mA
50 Ω
R
L
V
DD
2
Data Sheet D11820EJ1V0DS00
Page 3
••••
TYPICAL CHARACTERISTICS (TA = 25
µµµµ
PA1811
C)
°°°°
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
30 60 90 120 150
TA - Ambient Temperature -
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−16
Pulsed
V
GS
= −10 V
−12
−8
- Drain Current - A
D
I
−4
−4.5 V
˚C
−4.0 V
FORWARD BIAS SAFE OPERATING AREA
−100
Limited
R
(@V
DS(on)
4.0
−
=
GS
−10
−1
- Drain Current - A
D
I
−0.1
TA = 25 ˚C
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1 mm
−0.01
−0.1
V
TRANSFER CHARACTERISTICS
−100
VDS = −10 V
−10
−1
−0.1
- Drain Current - A
D
I
−0.01
I
I
D(DC)
D(pulse)
2
V)
−1
DS
- Drain to Source Voltage - V
PW
10
ms
100 ms
DC
−10 −100
= 125˚C
A
T
75˚C
25˚C
−
25˚C
=
1 ms
0
−0.2
V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−1.4
VDS = −10 V
I
D = −1 mA
−0.4
DS
- Drain to Source Voltage - V
−0.6
−1.2
−1
−0.8
−0.6
−0.4
VGS(off) - Gate to Source Cut-off Voltage - V
−50
ch - Channel Temperature - ˚C
T
50 1000
−0.8 −1
150
−0.001
0 −1 −2 −3
VGS - Gate to Sorce Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = −10 V
TA = −25 C
25 C
10
75 C
125 C
1
| - Forward Transfer Admittance - S
fs
| y
0.1
−1
ID - Drain Current - A
−10 −100−0.1
Data Sheet D11820EJ1V0DS00
3
Page 4
µµµµ
PA1811
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
120
V
GS
= −2.5 V
100
TA = 125˚C
80
75˚C
25˚C
60
−
25˚C
- Drain to Source On-State Resistance - mΩ
40
DS(on)
R
−0.1
−1
D
- Drain Current - A
I
−10 −100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
V
GS
= −10 V
40
TA = 125˚C
30
75˚C
25˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
V
GS
= −4.0 V
TA = 125˚C
60
75˚C
25˚C
40
- Drain to Source On-State Resistance - mΩ
20
DS(on)
R
−0.1
−
25˚C
−1
D
- Drain Current - A
I
−10 −100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
ID = −2.0 A
VGS = −2.5 V
80
60
40
−4.0 V
−10 V
−
20
- Drain to Source On-State Resistance - mΩ
10
DS(on)
R
−0.1
25˚C
−1
D
- Drain Current - A
I
−10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
ID = −2.0 A
150
100
50
- Drain to Source On-state Resistance - mΩ
0
DS (on)
0
R
−
−
2
4
−
6
−
VGS - Gate to Source Voltage - V
20
- Drain to Source On-state Resistance - mΩ
0
−100
R
10000
1000
−50
0 50 100 150
ch
- Channel Temperature -˚C
T
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
V
C
iss
C
oss
C
rss
GS
= 0 V
DS (on)
100
Ciss, Coss, Crss - Capacitance - pF
10
−1
8
−
10
V
DS
- Drain to Source Voltage - V
−10 −100
4
Data Sheet D11820EJ1V0DS00
Page 5
µµµµ
PA1811
SWITCHING CHARACTERISTICS
1000
100
, tf - Swwitchig Time - ns
(off)
, tr, td
(on)
td
10
−0.1 −1 −10
I
D
- Drain Current - A
V
DD
= −10 V
V
GS
(on) = −4.0 V
G
= 5 Ω
R
DYNAMIC INPUT CHARACTERISTICS
−4
ID = −4.0 A
−3
VDD = −10 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
tr
10
tf
td
(off)
td
(on)
1
IF - Source to Drain Current - A
0.1
VGS = 0 V
0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
−2
−1
VGS - Gate to Source Voltage - V
0
0
10 20 30 40
Qg - Gate Charge - nC
1000
Mounted on ceramic
substrate of
Single Pulse
100
10
1
- Transient Thermal Resistance - ˚C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
2
5000 mm
x 1.1 mm
62.5˚C/W
th(ch-A)
r
0.1
0.010.001
0.1
110
1000100
PW - Pulse Width - s
Data Sheet D11820EJ1V0DS00
5
Page 6
[MEMO]
µµµµ
PA1811
6
Data Sheet D11820EJ1V0DS00
Page 7
[MEMO]
µµµµ
PA1811
Data Sheet D11820EJ1V0DS00
7
Page 8
µµµµ
PA1811
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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