Page 1
Transistors with built-in Resistor
B
C
R1
R2
E
UN6221/6222/6223/6224
Silicon NPN epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
MT-1 type package, allowing supply with the radial taping.
0.15
0.65 max.
0.7 4.0
6.9±0.1
1.05
±0.05
1.0
2.5±0.1
Unit: mm
(1.45)
0.8
0.8
3.5±0.114.5±0.5
Resistance by Part Number
■
(R1)(R
●
UN6221 2.2kΩ 2.2kΩ
●
UN6222 4.7kΩ 4.7kΩ
●
UN6223 10kΩ 10kΩ
●
UN6224 2.2kΩ 10kΩ
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
)
2
50 V
50 V
500 mA
600 mW
150 ˚C
–55 to +150 ˚C
+0.1
0.45
–0.05
2.5±0.5 2.5±0.5
123
Internal Connection
0.85
–0.05
+0.1
0.45
2.5±0.1
1 : Emitter
2 : Collector
3 : Base
MT -1 Type Pakage
1
Page 2
Transistors with built-in Resistor UN6221/6222/6223/6224
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector cutoff current
Emitter
cutoff
current
UN6221 5
UN6222 I
UN6223/6224 1
Collector to base voltage V
Collector to emitter voltage V
Forward
current
transfer
ratio
UN6221 40
UN6222 h
UN6223/6224 60
Collector to emitter saturation voltage V
Output voltage high level V
Output voltage low level V
Transition frequency f
Input
resistance
UN6221/6224 2.2
UN6222 R
UN6223 10
Resistance ratio
UN6224 0.17 0.22 0.27
I
CBO
I
CEO
EBO
CBO
CEO
FE
CE(sat)
OH
OL
T
1
R1/R
VCB = 50V, IE = 0 1 µA
VCE = 50V, IB = 0 1 µA
VEB = 6V, IC = 0 2 mA
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCE = 10V, IC = 100mA 50
IC = 100mA, IB = 5mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 500Ω 4.9 V
VCC = 5V, VB = 3.5V, RL = 500Ω 0.2 V
VCB = 10V, IE = –50mA, f = 200MHz
200 MHz
(–30%) 4.7 (+30%) kΩ
0.8 1.0 1.2
2
2
Page 3
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
800
)
700
mW
(
600
T
500
400
300
200
100
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
Characteristics charts of UN6221
)
UN6221/6222/6223/6224
— V
I
C
300
IB=1.0mA
250
)
mA
(
200
C
150
100
Collector current I
50
0
012210486
Collector to emitter voltage VCE (V
Cob — V
24
)
pF
(
20
ob
16
CE
CB
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
13
)
Collector current IC (mA
25˚C
–25˚C
10 30 100 300 1000
IO — V
10000
3000
)
1000
µA
(
O
300
IN
C
Ta=75˚C
VO=5V
Ta=25˚C
IC/IB=10
)
400
FE
300
200
100
Forward current transfer ratio h
0
13
100
30
)
10
V
(
IN
3
hFE — I
–25˚C
10 30 100 300 1000
C
VCE=10V
Ta=75˚C
25˚C
Collector current IC (mA
VIN — I
O
VO=0.2V
Ta=25˚C
)
12
8
4
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
100
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
3
Page 4
Transistors with built-in Resistor UN6221/6222/6223/6224
Characteristics charts of UN6222
— V
I
C
300
250
)
mA
(
200
C
150
100
Collector current I
50
0
012210486
Collector to emitter voltage VCE (V
Cob — V
12
)
pF
(
10
ob
8
CE
CB
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
100
)
V
(
CE(sat)
0.3
0.1
0.03
— I
CE(sat)
30
10
3
1
25˚C
–25˚C
C
Ta=75˚C
IC/IB=10
200
VCE=10V
FE
150
100
50
Forward current transfer ratio h
hFE — I
Ta=75˚C
C
25˚C
–25˚C
Collector to emitter saturation voltage V
0.01
13
)
10000
3000
)
1000
µA
(
O
300
10 30 100 300 1000
Collector current IC (mA
IO — V
IN
VO=5V
Ta=25˚C
)
100
30
)
10
V
(
IN
0
13
10 30 100 300 1000
Collector current IC (mA
VIN — I
3
)
O
VO=0.2V
Ta=25˚C
6
4
2
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN6223
— V
I
C
CE
240
200
)
mA
(
160
C
120
80
Collector current I
40
0
012210486
Collector to emitter voltage VCE (V
IB=1.0mA
0.9mA
0.8mA
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
100
30
10
Output current I
3
1
0.4
)
100
)
V
(
CE(sat)
0.03
Input voltage VIN (V
V
30
10
3
1
0.3
0.1
–25˚C
CE(sat)
25˚C
— I
C
1.41.21.00.80.6
)
IC/IB=10
Ta=75˚C
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
1 3 10 30 100
Output current IO (mA
hFE — I
200
VCE=10V
FE
150
100
50
C
Ta=75˚C
25˚C
Forward current transfer ratio h
)
–25˚C
Collector to emitter saturation voltage V
0.01
13
)
10 30 100 300 1000
Collector current IC (mA
)
0
13
10 30 100 300 1000
Collector current IC (mA
)
4
Page 5
Transistors with built-in Resistor
UN6221/6222/6223/6224
)
pF
(
ob
Cob — V
12
10
8
6
4
2
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN6224
— V
I
C
CE
300
250
)
mA
(
200
C
150
100
Collector current I
50
0
012210486
Collector to emitter voltage VCE (V
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
30
10
Output current I
3
1
0.4
)
100
)
V
(
CE(sat)
0.03
Collector to emitter saturation voltage V
0.01
)
Input voltage VIN (V
V
CE(sat)
30
10
3
1
0.3
0.1
–25˚C
13
10 30 100 300 1000
Collector current IC (mA
25˚C
IN
— I
C
VO=5V
Ta=25˚C
)
IC/IB=10
Ta=75˚C
)
100
30
)
10
V
(
IN
3
1
0.3
Input voltage V
0.1
0.03
1.41.21.00.80.6
0.01
FE
0.1 0.3
200
VCE=10V
150
100
50
Forward current transfer ratio h
0
13
VIN — I
1 3 10 30 100
O
VO=0.2V
Ta=25˚C
Output current IO (mA
hFE — I
Ta=75˚C
10 30 100 300 1000
C
25˚C
–25˚C
Collector current IC (mA
)
)
)
pF
(
ob
Cob — V
12
10
8
6
4
2
CB
f=1MHz
I
Ta=25˚C
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
IO — V
10000
=0
E
)
3000
)
1000
µA
(
O
300
100
30
10
Output current I
3
1
0.4
Input voltage VIN (V
IN
VO=5V
Ta=25˚C
1.41.21.00.80.6
1000
300
)
100
V
(
IN
30
10
3
Input voltage V
1
0.3
0.1
0.1 0.3
)
VIN — I
1 3 10 30 100
O
VO=0.2V
Ta=25˚C
Output current IO (mA
)
5
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