Datasheet UNR6122, UNR6121, UNR612Y, UNR612X, UNR6124 Datasheet (Panasonic)

Transistors with built-in Resistor

B

C

R1

R2

E

UN6121/6122/6123/6124/612X/612Y

Silicon PNP epitaxial planer transistor

For digital circuits

Features

■

●

Costs can be reduced through downsizing of the equipment and reduction of the number of parts.

●

MT-1 type package, allowing supply with the radial taping.

0.15

0.65 max.

6.9±0.1

0.7 4.0

1.05 ±0.05

1.0

2.5±0.1

Unit: mm

(1.45)

0.8

3.5±0.114.5±0.5

Resistance by Part Number

■

(R1)(R

●

UN6121 2.2kΩ 2.2kΩ

●

UN6122 4.7KΩ 4.7kΩ

●

UN6123 10kΩ 10kΩ

●

UN6124 2.2kΩ 10kΩ

●

UN612X 0.27kΩ 5kΩ

●

UN612Y 3.1kΩ 4.6kΩ

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage V Collector to emitter voltage Collector current I Total power dissipation P Junction temperature T Storage temperature T

CBO

V

CEO

C

T

j

stg

)

2

–50 V –50 V

–500 mA

600 mW 150 ˚C

–55 to +150 ˚C

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

123

Internal Connection

0.85

–0.05

+0.1

0.45

2.5±0.1

1 : Emitter 2 : Collector 3 : Base MT -1 Type Pakage

1

Transistors with built-in Resistor UN6121/6122/6123/6124/612X/612Y

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector cutoff current I

UN612X I

Collector cutoff current I

UN612X I

Emitter cutoff current

UN6121 –5 UN6122/612X/612Y I

UN6123/6124 –1 Collector to base voltage V Collector to emitter voltage V

Forward current transfer ratio

UN6121 40

UN6122/612Y

UN6123/6124 60

UN612X 20 Collector to emitter saturation voltage V

UN612X V

UN612Y V Output voltage high level V Output voltage low level V Transition frequency f

h

CBO

CEO

EBO

FE

T

CBO

CEO

CE(sat)

OH

OL

UN6121 2.2

Input resistance

UN6122 4.7 UN6123 R

1

UN612X 0.27 UN612Y 3.1

Resistance ratio 0.8 1.0 1.2

UN6124

R1/R

UN612X 0.043 0.054 0.065 UN612Y 0.67

VCB = –50V, IE = 0 –1 VCB = –50V, IE = 0 – 0.1 VCE = –50V, IB = 0 –1 VCE = –50V, IB = 0 – 0.5

VEE = –6V, IC = 0 –2 mA

IC = –10µA, IE = 0 –50 V IC = –2mA, IB = 0 –50 V

50

VCE = –10V, IC = –100mA

IC = –100mA, IB = –5mA – 0.25 IC = –10mA, IB = – 0.3mA – 0.25 V IC = –50mA, IB = –5mA – 0.15 VCC = –5V, VB = – 0.5V, RL = 500Ω –4.9 V VCC = –5V, VB = –3.5V, RL = 500Ω – 0.2 V VCB = –10V, IE = 50mA, f = 200MHz

80 MHz

(–30%) 10 (+30%) kΩ

0.17 0.22 0.27

2

µA

Common characteristics chart

PT — Ta

800

)

700

mW

(

600

T

500

400

300

200

100

Total power dissipation P

0

0 16020 60 100 14040 12080

Ambient temperature Ta (˚C

2

)

Transistors with built-in Resistor UN6121/6122/6123/6124/612X/612Y

Characteristics charts of UN6121

— V

I

C

–240

–200

) mA

(

–160

C

–120

–80

Collector current I

–40

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Cob — V

12

) pF

(

10

ob

8

CE

Ta=25˚C

IB=–1.0mA

–0.9mA –0.8mA –0.7mA –0.6mA –0.5mA

–0.4mA –0.3mA –0.2mA –0.1mA

CB

f=1MHz

I

=0

E

Ta=25˚C

V

— I

–100

)

V

(

–30

CE(sat)

–10

–3

–1

–0.3

–0.1

–0.03

CE(sat)

25˚C

–25˚C

C

Ta=75˚C

IC/IB=10

400

FE

300

200

100

Forward current transfer ratio h

Collector to emitter saturation voltage V

–0.01

–1 –3

)

–10000

–3000

)

–1000

µA

(

O

–300

–10 –30 –100 –300 –1000

Collector current IC (mA

IO — V

IN

VO=–5V Ta=25˚C

)

V

(

IN

–100

–30

–10

0

–1 –3

–3

hFE — I

–10 –30 –100 –300 –1000

C

VCE=–10V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

VIN — I

O

VO=–0.2V Ta=25˚C

)

6

4

2

Collector output capacitance C

0 –0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

Characteristics charts of UN6122

— V

I

C

CE

–300

–250

)

mA

(

–200

C

–150

–100

Collector current I

–50

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Ta=25˚C

IB=–1.0mA

–0.9mA –0.8mA –0.7mA –0.6mA

–0.5mA –0.4mA –0.3mA

–0.2mA –0.1mA

–100

–30

–10

Output current I

–3

–1

–0.4

)

–100

)

V

(

–30

CE(sat)

–10

–0.3

–0.1

–0.03

Input voltage VIN (V

V

–3

–1

CE(sat)

25˚C

–25˚C

— I

C

–1.4–1.2–1.0–0.8–0.6

)

IC/IB=10

Ta=75˚C

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

–1 –3 –10 –30 –100

Output current IO (mA

hFE — I

160

VCE=–10V

FE

120

80

40

C

Ta=75˚C

25˚C

Forward current transfer ratio h

)

–25˚C

Collector to emitter saturation voltage V

–0.01

–1 –3

)

–10 –30 –100 –300 –1000

Collector current IC (mA

)

0

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

)

3

Transistors with built-in Resistor

UN6121/6122/6123/6124/612X/612Y

) pF

(

ob

Cob — V

24

20

16

12

8

4

CB

f=1MHz

=0

I

E

Ta=25˚C

Collector output capacitance C

0 –0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

Characteristics charts of UN6123

— V

I

C

CE

–240

–200

) mA

(

–160

C

–120

–80

Collector current I

–40

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Ta=25˚C

IB=–1.0mA

–0.9mA –0.8mA –0.7mA

–0.6mA –0.5mA –0.4mA –0.3mA

–0.2mA –0.1mA

IO — V

–10000

–3000

)

–1000

µA

(

O

–300

–100

–30

–10

Output current I

–3

–1

–0.4

)

–100

)

V

(

–30

CE(sat)

–10

–0.3

–0.1

–0.03

Collector to emitter saturation voltage V

–0.01

)

Input voltage VIN (V

V

CE(sat)

–3

–1

–25˚C

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

25˚C

IN

— I

C

Ta=75˚C

VO=–5V Ta=25˚C

)

IC/IB=10

)

–100

–30

)

–10

V

(

IN

–3

–1

–0.3

Input voltage V

–0.1

–0.03

–1.4–1.2–1.0–0.8–0.6

–0.01

200

FE

150

100

50

–0.1 –0.3

VCE=–10V

Forward current transfer ratio h

0

–1 –3

VIN — I

–1 –3 –10 –30 –100

O

VO=–0.2V Ta=25˚C

Output current IO (mA

hFE — I

–10 –30 –100 –300 –1000

C

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

Cob — V

24

CB

) pF

(

20

ob

16

12

8

4

Collector output capacitance C

0 –0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

4

f=1MHz I

=0

E

Ta=25˚C

IO — V

–10000

–3000

)

–1000

µA

(

O

–300

–100

–30

–10

Output current I

–3

–1

–0.4

)

Input voltage VIN (V

IN

VO=–5V Ta=25˚C

–1.4–1.2–1.0–0.8–0.6

–100

–30

)

–10

V

(

IN

–3

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

)

VIN — I

–1 –3 –10 –30 –100

O

VO=–0.2V Ta=25˚C

Output current IO (mA

)

Transistors with built-in Resistor UN6121/6122/6123/6124/612X/612Y

Characteristics charts of UN6124

— V

I

C

–300

–250

) mA

(

–200

C

–150

–100

Collector current I

–50

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Cob — V

24

)

pF

(

20

ob

16

CE

CB

Ta=25˚C

IB=–1.0mA

–0.9mA –0.8mA

–0.7mA –0.6mA

–0.5mA –0.4mA –0.3mA

–0.2mA –0.1mA

f=1MHz

=0

I

E

Ta=25˚C

V

–100

)

V

(

–30

CE(sat)

–10

–3

–1

–0.3

–0.1

–0.03

CE(sat)

–25˚C

25˚C

— I

C

Ta=75˚C

IC/IB=10

400

350

FE

300

250

200

150

100

Forward current transfer ratio h

50

hFE — I

C

VCE=–10V

Ta=75˚C

25˚C

–25˚C

Collector to emitter saturation voltage V

–0.01

–1 –3

)

–10000

–3000

)

–1000

µA

(

O

–300

–10 –30 –100 –300 –1000

Collector current IC (mA

IO — V

IN

VO=–5V Ta=25˚C

)

0

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

VIN — I

–100

–30

)

–10

V

(

IN

–3

O

)

VO=–0.2V Ta=25˚C

12

8

4

Collector output capacitance C

0 –0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

Characteristics charts of UN612X

— V

I

C

CE

–240

–200

) mA

(

–160

C

–120

–80

Collector current I

–40

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Ta=25˚C

IB=–1.6mA

–1.4mA –1.2mA

–1.0mA –0.8mA

–0.6mA –0.4mA

–0.2mA

–100

–30

–10

Output current I

–3

–1

–0.4

)

–100

)

V

(

–30

CE(sat)

–10

–0.3

–0.1

–0.03

Input voltage VIN (V

V

–3

–1

CE(sat)

25˚C

— I

Ta=75˚C

C

–1.4–1.2–1.0–0.8–0.6

)

IC/IB=10

–25˚C

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

–1 –3 –10 –30 –100

Output current IO (mA

hFE — I

240

FE

200

160

120

80

40

Forward current transfer ratio h

C

VCE=–10V

Ta=75˚C

25˚C

–25˚C

)

Collector to emitter saturation voltage V

–0.01

–1 –3

)

–10 –30 –100 –300 –1000

Collector current IC (mA

)

0

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

)

5

Transistors with built-in Resistor UN6121/6122/6123/6124/612X/612Y

) pF

(

ob

Cob — V

24

20

16

12

8

4

CB

f=1MHz I

=0

E

Ta=25˚C

Collector output capacitance C

0

–3 –10 –30 –100

–1

Collector to base voltage VCB (V

Characteristics charts of UN612Y

— V

I

C

CE

–240

–200

)

mA

(

–160

C

–120

–80

Collector current I

–40

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Ta=25˚C

IB=–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.4mA

–0.2mA

VIN — I

–100

–30

)

–10

V

(

IN

–3

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

)

–100

)

V

(

–30

CE(sat)

–10

–3

–1

–0.3

–0.1

–0.03

–1 –3 –10 –30 –100

Output current IO (mA

V

CE(sat)

25˚C

O

— I

Ta=75˚C

–25˚C

VO=–0.2V Ta=25˚C

C

IC/IB=10

)

hFE — I

240

FE

200

160

120

80

40

Forward current transfer ratio h

C

VCE=–10V

Ta=75˚C

25˚C

–25˚C

Collector to emitter saturation voltage V

–0.01

–1 –3

)

–10 –30 –100 –300 –1000

Collector current IC (mA

)

0

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

)

Cob — V

24

CB

) pF

(

20

ob

16

12

8

4

Collector output capacitance C

0

–3 –10 –30 –100

–1

Collector to base voltage VCB (V

6

f=1MHz I

=0

E

Ta=25˚C

VIN — I

–100

–30

)

–10

V

(

IN

–3

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

)

–1 –3 –10 –30 –100

Output current IO (mA

O

VO=–0.2V Ta=25˚C

)