Page 1

Transistors with built-in Resistor
UN6121/6122/6123/6124/612X/612Y
Silicon PNP epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
MT-1 type package, allowing supply with the radial taping.
0.15
0.65 max.
6.9±0.1
0.7 4.0
1.05
±0.05
1.0
2.5±0.1
Unit: mm
(1.45)
0.8
0.8
3.5±0.114.5±0.5
Resistance by Part Number
■
(R1)(R
●
UN6121 2.2kΩ 2.2kΩ
●
UN6122 4.7KΩ 4.7kΩ
●
UN6123 10kΩ 10kΩ
●
UN6124 2.2kΩ 10kΩ
●
UN612X 0.27kΩ 5kΩ
●
UN612Y 3.1kΩ 4.6kΩ
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
)
2
–50 V
–50 V
–500 mA
600 mW
150 ˚C
–55 to +150 ˚C
+0.1
0.45
–0.05
2.5±0.5 2.5±0.5
123
Internal Connection
0.85
–0.05
+0.1
0.45
2.5±0.1
1 : Emitter
2 : Collector
3 : Base
MT -1 Type Pakage
1
Page 2

Transistors with built-in Resistor UN6121/6122/6123/6124/612X/612Y
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
UN612X I
Collector cutoff current I
UN612X I
Emitter
cutoff
current
UN6121 –5
UN6122/612X/612Y I
UN6123/6124 –1
Collector to base voltage V
Collector to emitter voltage V
Forward
current
transfer
ratio
UN6121 40
UN6122/612Y
UN6123/6124 60
UN612X 20
Collector to emitter saturation voltage V
UN612X V
UN612Y V
Output voltage high level V
Output voltage low level V
Transition frequency f
h
CBO
CBO
CEO
CEO
EBO
FE
T
CBO
CEO
CE(sat)
CE(sat)
CE(sat)
OH
OL
UN6121 2.2
Input
resistance
UN6122 4.7
UN6123 R
1
UN612X 0.27
UN612Y 3.1
Resistance ratio 0.8 1.0 1.2
UN6124
R1/R
UN612X 0.043 0.054 0.065
UN612Y 0.67
VCB = –50V, IE = 0 –1
VCB = –50V, IE = 0 – 0.1
VCE = –50V, IB = 0 –1
VCE = –50V, IB = 0 – 0.5
VEE = –6V, IC = 0 –2 mA
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
50
VCE = –10V, IC = –100mA
IC = –100mA, IB = –5mA – 0.25
IC = –10mA, IB = – 0.3mA – 0.25 V
IC = –50mA, IB = –5mA – 0.15
VCC = –5V, VB = – 0.5V, RL = 500Ω –4.9 V
VCC = –5V, VB = –3.5V, RL = 500Ω – 0.2 V
VCB = –10V, IE = 50mA, f = 200MHz
80 MHz
(–30%) 10 (+30%) kΩ
0.17 0.22 0.27
2
µA
µA
Common characteristics chart
PT — Ta
800
)
700
mW
(
600
T
500
400
300
200
100
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
2
)
Page 3

Transistors with built-in Resistor UN6121/6122/6123/6124/612X/612Y
Characteristics charts of UN6121
— V
I
C
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
12
)
pF
(
10
ob
8
CE
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
CB
f=1MHz
I
=0
E
Ta=25˚C
V
— I
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
CE(sat)
25˚C
–25˚C
C
Ta=75˚C
IC/IB=10
400
FE
300
200
100
Forward current transfer ratio h
Collector to emitter saturation voltage V
–0.01
–1 –3
)
–10000
–3000
)
–1000
µA
(
O
–300
–10 –30 –100 –300 –1000
Collector current IC (mA
IO — V
IN
VO=–5V
Ta=25˚C
)
)
V
(
IN
–100
–30
–10
0
–1 –3
–3
hFE — I
–10 –30 –100 –300 –1000
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
VIN — I
O
VO=–0.2V
Ta=25˚C
)
6
4
2
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN6122
— V
I
C
CE
–300
–250
)
mA
(
–200
C
–150
–100
Collector current I
–50
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
Input voltage VIN (V
V
–3
–1
CE(sat)
25˚C
–25˚C
— I
C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
Ta=75˚C
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
160
VCE=–10V
FE
120
80
40
C
Ta=75˚C
25˚C
Forward current transfer ratio h
)
–25˚C
Collector to emitter saturation voltage V
–0.01
–1 –3
)
–10 –30 –100 –300 –1000
Collector current IC (mA
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
3
Page 4

Transistors with built-in Resistor
UN6121/6122/6123/6124/612X/612Y
)
pF
(
ob
Cob — V
24
20
16
12
8
4
CB
f=1MHz
=0
I
E
Ta=25˚C
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN6123
— V
I
C
CE
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–3
–1
–25˚C
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
25˚C
IN
— I
C
Ta=75˚C
VO=–5V
Ta=25˚C
)
IC/IB=10
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–1.4–1.2–1.0–0.8–0.6
–0.01
200
FE
150
100
50
–0.1 –0.3
VCE=–10V
Forward current transfer ratio h
0
–1 –3
VIN — I
–1 –3 –10 –30 –100
O
VO=–0.2V
Ta=25˚C
Output current IO (mA
hFE — I
–10 –30 –100 –300 –1000
C
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
)
Cob — V
24
CB
)
pF
(
20
ob
16
12
8
4
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
4
f=1MHz
I
=0
E
Ta=25˚C
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
IN
VO=–5V
Ta=25˚C
–1.4–1.2–1.0–0.8–0.6
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
)
VIN — I
–1 –3 –10 –30 –100
O
VO=–0.2V
Ta=25˚C
Output current IO (mA
)
Page 5

Transistors with built-in Resistor UN6121/6122/6123/6124/612X/612Y
Characteristics charts of UN6124
— V
I
C
–300
–250
)
mA
(
–200
C
–150
–100
Collector current I
–50
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
24
)
pF
(
20
ob
16
CE
CB
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
CE(sat)
–25˚C
25˚C
— I
C
Ta=75˚C
IC/IB=10
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
–0.01
–1 –3
)
–10000
–3000
)
–1000
µA
(
O
–300
–10 –30 –100 –300 –1000
Collector current IC (mA
IO — V
IN
VO=–5V
Ta=25˚C
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
–100
–30
)
–10
V
(
IN
–3
O
)
VO=–0.2V
Ta=25˚C
12
8
4
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN612X
— V
I
C
CE
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Ta=25˚C
IB=–1.6mA
–1.4mA
–1.2mA
–1.0mA
–0.8mA
–0.6mA
–0.4mA
–0.2mA
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
Input voltage VIN (V
V
–3
–1
CE(sat)
25˚C
— I
Ta=75˚C
C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
–25˚C
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
240
FE
200
160
120
80
40
Forward current transfer ratio h
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
)
Collector to emitter saturation voltage V
–0.01
–1 –3
)
–10 –30 –100 –300 –1000
Collector current IC (mA
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
5
Page 6

Transistors with built-in Resistor UN6121/6122/6123/6124/612X/612Y
)
pF
(
ob
Cob — V
24
20
16
12
8
4
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
Characteristics charts of UN612Y
— V
I
C
CE
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Ta=25˚C
IB=–1.2mA
–1.0mA
–0.8mA
–0.6mA
–0.4mA
–0.2mA
VIN — I
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
–1 –3 –10 –30 –100
Output current IO (mA
V
CE(sat)
25˚C
O
— I
Ta=75˚C
–25˚C
VO=–0.2V
Ta=25˚C
C
IC/IB=10
)
hFE — I
240
FE
200
160
120
80
40
Forward current transfer ratio h
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
–0.01
–1 –3
)
–10 –30 –100 –300 –1000
Collector current IC (mA
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
Cob — V
24
CB
)
pF
(
20
ob
16
12
8
4
Collector output capacitance C
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
6
f=1MHz
I
=0
E
Ta=25˚C
VIN — I
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
)
–1 –3 –10 –30 –100
Output current IO (mA
O
VO=–0.2V
Ta=25˚C
)