Datasheet UNR4121, UNR4122, UNR4123, UNR4124, UNR412X Datasheet (Panasonic)

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Page 1
Transistors with built-in Resistor
B
C
R1
R2
E
UNR4121/4122/4123/4124/412X/412Y
(UN4121/4122/4123/4124/412X/412Y)
Silicon PNP epitaxial planer transistor
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
New S type package, allowing supply with the radial taping.
Resistance by Part Number
(R1)(R
UNR4121 2.2k 2.2k
UNR4122 4.7k 4.7k
UNR4123 10k 10k
UNR4124 2.2k 10k
UNR412X 0.27k 5.0k
UNR412Y 3.1k 4.6k
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
)
2
–50 V
–50 V
–500 mA
300 mW
150 ˚C
–55 to +150 ˚C
4.0±0.2
marking
123
1.271.27
Internal Connection
3.0±0.215.6±0.5
0.1
+0.2
0.7±0.1
2.0±0.2
0.45
2.54±0.15
1 : Emitter 2 : Collector 3 : Base New S Type Package
Unit: mm
Note.) The Part numbers in the Parenthesis show conventional part number.
1
Page 2
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
UNR4121/4122/4123/4124/412X/412Y
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
UNR412X
Collector cutoff current I
UNR412X
Emitter cutoff current
UNR4121 –5
UNR4122/412X/412Y I
UNR4123/4124 –1
Collector to base voltage V
Collector to emitter voltage V
Forward current transfer ratio
UNR4121 40
UNR4122/412Y
UNR4123/4124 60
UNR412X 20
Collector to emitter saturation voltage V
UNR412X
UNR412Y
Output voltage high level V
Output voltage low level V
Transition frequency f
CBO
I
CBO
CEO
I
CEO
EBO
CBO
CEO
h
FE
CE(sat)IC
V
CE(sat)IC
V
CE(sat)IC
OH
OL
T
VCB = –50V, IE = 0 –1
VCB = –50V, IE = 0 – 0.1
VCE = –50V, IB = 0 –1
VCE = –50V, IB = 0 – 0.5
VEB = –6V, IC = 0 –2 mA
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCE = –10V, IC = –100mA
50
= –100mA, IB = –5mA – 0.25
= –10mA, IB = – 0.3mA – 0.25 V
= –50mA, IB = –5mA – 0.15
VCC = –5V, VB = – 0.5V, RL = 500 –4.9 V
VCC = –5V, VB = –3.5V, RL = 500 – 0.2 V
VCB = –10V, IE = 50mA, f = 200MHz
80 MHz
UNR4121/4124 2.2
Input resis­tance
UNR4122 4.7
UNR4123 R
1
(–30%) 10 (+30%) k
UNR412X 0.27
UNR412Y 3.1
Resistance ratio 0.8 1.0 1.2
UNR4124
UNR412X 0.043 0.054 0.065
R1/R
2
0.17 0.22 0.27
UNR412Y 0.67
µA
µA
Common characteristics chart
PT — Ta
400
)
mW (
300
T
200
100
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
2
)
Page 3
Transistors with built-in Resistor
Characteristics charts of UNR4121
UNR4121/4122/4123/4124/412X/412Y
— V
I
C
240
200
) mA
(
–160
C
120
80
Collector current I
–40
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
Cob — V
12
) pF
(
10
ob
8
6
CE
IB=1.0mA
0.9mA0.8mA0.7mA0.6mA0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
CB
f=1MHz I
E
Ta=25˚C
Ta=25˚C
=0
V
— I
CE(sat)
–100
) V
(
–30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
1 3
)
25˚C
10 30 100 300 1000
Collector current IC (mA
IO — V
10000
3000
)
–1000
µA (
O
300
100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
)
IN
) V
(
IN
100
30
10
3
1
VO=– 5V Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
25˚C
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=– 0.2V Ta=25˚C
)
4
2
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UNR4122
— V
I
C
300
250
) mA
(
–200
C
150
100
Collector current I
–50
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
CE
Ta=25˚C
IB=–1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
)
30
10
Output current I
3
1
0.4
)
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
100
30
10
3
1
0.3
0.1
1 3
V
— I
CE(sat)
25˚C
25˚C
10 30 100 300 1000
Collector current IC (mA
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
1 3 10 30 100
Output current IO (mA
hFE — I
160
VCE=–10V
FE
120
80
40
C
Ta=75˚C
25˚C
Forward current transfer ratio h
0
1 3
10 30 100 300 1000
Collector current IC (mA
)
–25˚C
)
3
Page 4
Transistors with built-in Resistor
UNR4121/4122/4123/4124/412X/412Y
) pF
(
ob
Cob — V
24
20
16
12
8
4
CB
f=1MHz I
=0
E
Ta=25˚C
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UNR4123
— V
I
C
CE
240
200
)
mA
(
–160
C
120
80
Collector current I
–40
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
Ta=25˚C
IB=–1.0mA
0.9mA0.8mA0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
IO — V
IN
10000
3000
)
–1000
µA (
O
300
100
30
10
Output current I
3
1
)
)
–0.4
Input voltage VIN (V
V
CE(sat)
–100
) V
(
–30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
1 3
25˚C
25˚C
10 30 100 300 1000
Collector current IC (mA
— I
C
VO=– 5V Ta=25˚C
)
IC/IB=10
Ta=75˚C
–1.4–1.2–1.0–0.8–0.6
)
100
30
)
–10
V (
IN
3
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
200
FE
150
100
50
Forward current transfer ratio h
0
–1 –3
VIN — I
O
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
C
VCE=–10V
25˚C
25˚C
10 30 100 300 1000
Collector current IC (mA
VO=– 0.2V Ta=25˚C
)
Ta=75˚C
)
) pF
(
ob
Cob — V
24
20
16
12
8
4
CB
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
4
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
10000
3000
)
–1000
µA (
O
300
100
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
VO=– 5V Ta=25˚C
)
1.41.21.00.80.6
100
30
)
–10
V (
IN
3
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
VIN — I
O
VO=– 0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
Page 5
Transistors with built-in Resistor
Characteristics charts of UNR4124
UNR4121/4122/4123/4124/412X/412Y
— V
I
C
300
250
) mA
(
–200
C
150
100
Collector current I
–50
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
Cob — V
24
) pF
(
20
ob
16
12
CE
CB
Ta=25˚C
IB=–1.0mA
0.9mA0.8mA0.7mA0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz I
=0
E
Ta=25˚C
V
— I
CE(sat)
–100
) V
(
–30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
–0.01
)
25˚C
1 3
10 30 100 300 1000
Collector current IC (mA
IO — V
10000
3000
)
–1000
µA (
O
300
100
25˚C
C
IC/IB=10
Ta=75˚C
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
0
–1 –3
)
IN
) V
(
IN
100
30
10
3
1
VO=– 5V Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
25˚C
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=– 0.2V Ta=25˚C
)
8
4
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UNR412X
— V
I
C
240
200
) mA
(
–160
C
120
80
Collector current I
–40
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
CE
Ta=25˚C
IB=–1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
)
30
10
Output current I
3
1
0.4
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
30
10
3
1
0.3
0.1
1 3
V
— I
CE(sat)
Ta=75˚C
25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
–25˚C
)
–0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
1 3 10 30 100
Output current IO (mA
hFE — I
240
FE
200
160
120
80
40
Forward current transfer ratio h
0
–1 –3
C
VCE=–10V
Ta=75˚C
25˚C
25˚C
10 30 100 300 1000
Collector current IC (mA
)
)
5
Page 6
Transistors with built-in Resistor
UNR4121/4122/4123/4124/412X/412Y
) pF
(
ob
Cob — V
24
20
16
12
8
4
CB
f=1MHz
=0
I
E
Ta=25˚C
Collector output capacitance C
0
3 10 30 100
1
Collector to base voltage VCB (V
Characteristics charts of UNR412Y
— V
I
C
CE
240
200
) mA
(
–160
C
120
80
Collector current I
–40
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
Ta=25˚C
IB=–1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
)
VIN — I
O
100
30
)
–10
V
(
IN
3
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
)
–100
)
V
(
–30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
1 3
1 3 10 30 100
Output current IO (mA
V
CE(sat)
25˚C
10 30 100 300 1000
Collector current IC (mA
— I
Ta=75˚C
25˚C
VO=– 0.2V Ta=25˚C
C
IC/IB=10
)
hFE — I
C
240
FE
200
160
120
80
40
Forward current transfer ratio h
0
–1 –3
)
–10 –30 –100 –300 –1000
Collector current IC (mA
VCE=–10V
Ta=75˚C
25˚C
–25˚C
)
) pF
(
ob
Cob — V
24
20
16
12
8
4
CB
Collector output capacitance C
0
3 10 30 100
1
Collector to base voltage VCB (V
6
f=1MHz
=0
I
E
Ta=25˚C
VIN — I
O
100
30
)
–10
V (
IN
3
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
)
–1 –3 –10 –30 –100
Output current IO (mA
VO=– 0.2V Ta=25˚C
)
Page 7
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2001 MAR
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