Page 1
Transistors with built-in Resistor
B
C
R1
R2
E
UNR4121/4122/4123/4124/412X/412Y
(UN4121/4122/4123/4124/412X/412Y)
Silicon PNP epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
New S type package, allowing supply with the radial taping.
Resistance by Part Number
■
(R1)(R
●
UNR4121 2.2kΩ 2.2kΩ
●
UNR4122 4.7kΩ 4.7kΩ
●
UNR4123 10kΩ 10kΩ
●
UNR4124 2.2kΩ 10kΩ
●
UNR412X 0.27kΩ 5.0kΩ
●
UNR412Y 3.1kΩ 4.6kΩ
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
)
2
–50 V
–50 V
–500 mA
300 mW
150 ˚C
–55 to +150 ˚C
4.0±0.2
marking
123
1.271.27
Internal Connection
3.0±0.215.6±0.5
0.1
+0.2
–
0.7±0.1
2.0±0.2
0.45
2.54±0.15
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Unit: mm
Note.) The Part numbers in the Parenthesis show conventional part number.
1
Page 2
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
UNR4121/4122/4123/4124/412X/412Y
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
UNR412X
Collector cutoff current I
UNR412X
Emitter
cutoff
current
UNR4121 –5
UNR4122/412X/412Y I
UNR4123/4124 –1
Collector to base voltage V
Collector to emitter voltage V
Forward
current
transfer
ratio
UNR4121 40
UNR4122/412Y
UNR4123/4124 60
UNR412X 20
Collector to emitter saturation voltage V
UNR412X
UNR412Y
Output voltage high level V
Output voltage low level V
Transition frequency f
CBO
I
CBO
CEO
I
CEO
EBO
CBO
CEO
h
FE
CE(sat)IC
V
CE(sat)IC
V
CE(sat)IC
OH
OL
T
VCB = –50V, IE = 0 –1
VCB = –50V, IE = 0 – 0.1
VCE = –50V, IB = 0 –1
VCE = –50V, IB = 0 – 0.5
VEB = –6V, IC = 0 –2 mA
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCE = –10V, IC = –100mA
50
= –100mA, IB = –5mA – 0.25
= –10mA, IB = – 0.3mA – 0.25 V
= –50mA, IB = –5mA – 0.15
VCC = –5V, VB = – 0.5V, RL = 500Ω –4.9 V
VCC = –5V, VB = –3.5V, RL = 500Ω – 0.2 V
VCB = –10V, IE = 50mA, f = 200MHz
80 MHz
UNR4121/4124 2.2
Input
resistance
UNR4122 4.7
UNR4123 R
1
(–30%) 10 (+30%) kΩ
UNR412X 0.27
UNR412Y 3.1
Resistance ratio 0.8 1.0 1.2
UNR4124
UNR412X 0.043 0.054 0.065
R1/R
2
0.17 0.22 0.27
UNR412Y 0.67
µA
µA
Common characteristics chart
PT — Ta
400
)
mW
(
300
T
200
100
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
2
)
Page 3
Transistors with built-in Resistor
Characteristics charts of UNR4121
UNR4121/4122/4123/4124/412X/412Y
— V
I
C
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
Cob — V
12
)
pF
(
10
ob
8
6
CE
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
CB
f=1MHz
I
E
Ta=25˚C
Ta=25˚C
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–1 –3
)
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
)
IN
)
V
(
IN
–100
–30
–10
–3
–1
VO=– 5V
Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=– 0.2V
Ta=25˚C
)
4
2
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR4122
— V
I
C
–300
–250
)
mA
(
–200
C
–150
–100
Collector current I
–50
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
CE
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
)
–30
–10
Output current I
–3
–1
–0.4
)
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
–100
–30
–10
–3
–1
–0.3
–0.1
–1 –3
V
— I
CE(sat)
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
160
VCE=–10V
FE
120
80
40
C
Ta=75˚C
25˚C
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
–25˚C
)
3
Page 4
Transistors with built-in Resistor
UNR4121/4122/4123/4124/412X/412Y
)
pF
(
ob
Cob — V
24
20
16
12
8
4
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR4123
— V
I
C
CE
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
)
)
–0.4
Input voltage VIN (V
V
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–1 –3
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
— I
C
VO=– 5V
Ta=25˚C
)
IC/IB=10
Ta=75˚C
–1.4–1.2–1.0–0.8–0.6
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
200
FE
150
100
50
Forward current transfer ratio h
0
–1 –3
VIN — I
O
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
C
VCE=–10V
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VO=– 0.2V
Ta=25˚C
)
Ta=75˚C
)
)
pF
(
ob
Cob — V
24
20
16
12
8
4
CB
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
4
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
VO=– 5V
Ta=25˚C
)
–1.4–1.2–1.0–0.8–0.6
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
VIN — I
O
VO=– 0.2V
Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
Page 5
Transistors with built-in Resistor
Characteristics charts of UNR4124
UNR4121/4122/4123/4124/412X/412Y
— V
I
C
–300
–250
)
mA
(
–200
C
–150
–100
Collector current I
–50
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
Cob — V
24
)
pF
(
20
ob
16
12
CE
CB
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
f=1MHz
I
=0
E
Ta=25˚C
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
–25˚C
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
25˚C
C
IC/IB=10
Ta=75˚C
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
0
–1 –3
)
IN
)
V
(
IN
–100
–30
–10
–3
–1
VO=– 5V
Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=– 0.2V
Ta=25˚C
)
8
4
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR412X
— V
I
C
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
CE
Ta=25˚C
IB=–1.6mA
–1.4mA
–1.2mA
–1.0mA
–0.8mA
–0.6mA
–0.4mA
–0.2mA
)
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
–30
–10
–3
–1
–0.3
–0.1
–1 –3
V
— I
CE(sat)
Ta=75˚C
25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
–25˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
240
FE
200
160
120
80
40
Forward current transfer ratio h
0
–1 –3
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
5
Page 6
Transistors with built-in Resistor
UNR4121/4122/4123/4124/412X/412Y
)
pF
(
ob
Cob — V
24
20
16
12
8
4
CB
f=1MHz
=0
I
E
Ta=25˚C
Collector output capacitance C
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
Characteristics charts of UNR412Y
— V
I
C
CE
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
Ta=25˚C
IB=–1.2mA
–1.0mA
–0.8mA
–0.6mA
–0.4mA
–0.2mA
)
VIN — I
O
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–1 –3
–1 –3 –10 –30 –100
Output current IO (mA
V
CE(sat)
25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
— I
Ta=75˚C
–25˚C
VO=– 0.2V
Ta=25˚C
C
IC/IB=10
)
hFE — I
C
240
FE
200
160
120
80
40
Forward current transfer ratio h
0
–1 –3
)
–10 –30 –100 –300 –1000
Collector current IC (mA
VCE=–10V
Ta=75˚C
25˚C
–25˚C
)
)
pF
(
ob
Cob — V
24
20
16
12
8
4
CB
Collector output capacitance C
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
6
f=1MHz
=0
I
E
Ta=25˚C
VIN — I
O
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
)
–1 –3 –10 –30 –100
Output current IO (mA
VO=– 0.2V
Ta=25˚C
)
Page 7
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and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
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(3) The products described in this material are intended to be used for standard applications or gen-
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Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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harm the human body.
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notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
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mum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
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Please read the following notes before using the datasheets
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semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
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2001 MAR
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