Page 1
Transistors with built-in Resistor
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
B
C
R1
R2
E
UN2221/2222/2223/2224
Silicon NPN epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
Resistance by Part Number
■
●
UN2221 9A 2.2kΩ 2.2kΩ
●
UN2222 9B 4.7kΩ 4.7kΩ
●
UN2223 9C 10kΩ 10kΩ
●
UN2224 9D 2.2kΩ 10kΩ
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
Electrical Characteristics (Ta=25˚C)
■
Collector cutoff current
Emitter
cutoff
current
Collector to base voltage V
Collector to emitter voltage V
Forward
current
transfer
ratio
Collector to emitter saturation voltage V
Output voltage high level V
Output voltage low level V
Transition frequency f
Input
resistance
Resistance ratio
Marking Symbol (R1)(R
CBO
V
CEO
C
T
j
stg
–55 to +150 ˚C
)
2
50 V
50 V
500 mA
200 mW
150 ˚C
1:Base
2:Emitter EIAJ:SC-59
3:Collector Mini Type Package
Internal Connection
Parameter Symbol Conditions min typ max Unit
I
I
CBO
CEO
VCB = 50V, IE = 0 1 µA
VCE = 50V, IB = 0 1 µA
UN2221 5
UN2222 I
EBO
VEB = 6V, IC = 0 2 mA
UN2223/2224 1
CBO
CEO
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
UN2221 40
UN2222 h
FE
VCE = 10V, IC = 100mA 50
UN2223/2224 60
CE(sat)IC
OH
OL
UN2221/2224 2.2
UN2222 R
UN2223 10
UN2224 0.22
T
1
R1/R
= 100mA, IB = 5mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 500Ω 4.9 V
VCC = 5V, VB = 3.5V, RL = 500Ω 0.2 V
VCB = 10V, IE = –50mA, f = 200MHz
200 MHz
(–30%) 4.7 (+30%) kΩ
0.8 1.0 1.2
2
Unit: mm
1
Page 2
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
Characteristics charts of UN2221
)
UN2221/2222/2223/2224
— V
I
C
300
IB=1.0mA
250
)
mA
(
200
C
150
100
Collector current I
50
0
012210486
Collector to emitter voltage VCE (V
Cob — V
24
)
pF
(
20
ob
16
12
CE
CB
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
)
–25˚C
0.01
13
10 30 100 300 1000
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
13
)
IN
VO=5V
Ta=25˚C
100
30
)
10
V
(
IN
3
1
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V
Ta=25˚C
)
8
4
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
2
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
Page 3
Transistors with built-in Resistor
Characteristics charts of UN2222
UN2221/2222/2223/2224
— V
I
C
300
250
)
mA
(
200
C
150
100
Collector current I
50
0
012210486
Collector to emitter voltage VCE (V
Cob — V
12
)
pF
(
10
ob
8
6
CE
CB
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
13
)
25˚C
–25˚C
10 30 100 300 1000
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
C
IC/IB=10
Ta=75˚C
200
FE
150
100
50
Forward current transfer ratio h
0
13
)
IN
VO=5V
Ta=25˚C
100
30
)
10
V
(
IN
3
1
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V
Ta=25˚C
)
4
2
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN2223
— V
I
C
CE
240
200
)
mA
(
160
C
120
80
Collector current I
40
0
012210486
Collector to emitter voltage VCE (V
IB=1.0mA
0.9mA
0.8mA
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
30
10
Output current I
3
1
0.4
)
)
V
(
CE(sat)
Collector to emitter saturation voltage V
)
Input voltage VIN (V
V
CE(sat)
100
30
10
3
1
0.3
0.1
0.03
0.01
–25˚C
13
10 30 100 300 1000
Collector current IC (mA
25˚C
— I
C
1.41.21.00.80.6
)
IC/IB=10
Ta=75˚C
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
1 3 10 30 100
Output current IO (mA
hFE — I
C
200
VCE=10V
FE
150
100
50
25˚C
Forward current transfer ratio h
0
13
10 30 100 300 1000
Collector current IC (mA
)
Ta=75˚C
–25˚C
)
3
Page 4
Transistors with built-in Resistor
UN2221/2222/2223/2224
)
pF
(
Cob — V
12
10
ob
8
6
4
2
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN2224
— V
I
C
CE
300
250
)
mA
(
200
C
150
100
Collector current I
50
0
012210486
Collector to emitter voltage VCE (V
Ta=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
IO — V
IN
10000
3000
)
1000
µA
(
O
300
100
30
10
Output current I
3
1
0.4
)
)
V
(
CE(sat)
Collector to emitter saturation voltage V
)
Input voltage VIN (V
V
CE(sat)
100
30
10
3
1
0.3
0.1
0.03
–25˚C
0.01
13
10 30 100 300 1000
Collector current IC (mA
25˚C
— I
C
VO=5V
Ta=25˚C
)
IC/IB=10
Ta=75˚C
1.41.21.00.80.6
)
100
30
)
10
V
(
IN
3
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
200
FE
150
100
50
Forward current transfer ratio h
0
13
VIN — I
O
1 3 10 30 100
Output current IO (mA
hFE — I
C
VCE=10V
Ta=75˚C
10 30 100 300 1000
25˚C
–25˚C
Collector current IC (mA
VO=0.2V
Ta=25˚C
)
)
)
pF
(
Cob — V
12
10
ob
8
6
4
2
CB
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
4
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
10000
3000
)
1000
µA
(
O
300
100
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
VO=5V
Ta=25˚C
)
1.41.21.00.80.6
1000
300
)
100
V
(
IN
30
10
3
Input voltage V
1
0.3
0.1
0.1 0.3
VIN — I
O
VO=0.2V
Ta=25˚C
1 3 10 30 100
Output current IO (mA
)
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