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UNR211T
Datasheet (Panasonic)
17 pgs241.64 Kb0

Datasheet UNR2110, UNR211Z, UNR211V, UNR211T, UNR211N Datasheet (Panasonic)

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Page 1
Transistors with built-in Resistor
2.8
+0.2 –0.3
1.5
+0.25 –0.05
0.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
B
C
R1
R2
E
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Silicon PNP epitaxial planer transistor
For digital circuits
Features
■
Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
Resistance by Part Number
■
Marking Symbol (R1)(R
UN2111 6A 10kΩ 10kΩ
UN2112 6B 22kΩ 22kΩ
UN2113 6C 47kΩ 47kΩ
UN2114 6D 10kΩ 47kΩ
UN2115 6E 10kΩ —
UN2116 6F 4.7kΩ —
UN2117 6H 22kΩ —
UN2118 6I 0.51kΩ 5.1kΩ
UN2119 6K 1kΩ 10kΩ
UN2110 6L 47kΩ —
UN211D 6M 47kΩ 10kΩ
UN211E 6N 47kΩ 22kΩ
UN211F 6O 4.7kΩ 10kΩ
UN211H 6P 2.2kΩ 10kΩ
UN211L 6Q 4.7kΩ 4.7kΩ
UN211M EI 2.2kΩ 47kΩ
UN211N EW 4.7kΩ 47kΩ
UN211T EY 22kΩ 47kΩ
UN211V FC 2.2kΩ 2.2kΩ
UN211Z FE 4.7kΩ 22kΩ
)
2
Unit: mm
1:Base 2:Emitter EIAJ:SC-59 3:Collector Mini T ype Package
Internal Connection
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage Collector current I Total power dissipation P Junction temperature T Storage temperature T
CBO
V
CEO
C
T
j
stg
–50 V –50 V
–100 mA
200 mW 150 ˚C
–55 to +150 ˚C
1
Page 2
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UN2111 – 0.5 UN2112/2114/211E/211D/211M/211N/211T UN2113 – 0.1
Emitter cutoff current
UN2115/2116/2117/2110 – 0.01 UN211F/211H UN2119 –1.5 UN2118/211L/211V –2.0
UN211Z – 0.4 Collector to base voltage V Collector to emitter voltage V
UN2111 35
UN2112/211E 60
UN2113/2114/211M 80
Forward current transfer ratio
UN2115*/2116*/2117*/2110*
UN2119/211F/211D/211H h
UN2118/211L 20
UN211N/211T 80 400
UN211V 6 20
UN211Z 60 200 Collector to emitter saturation voltage
UN211V IC = –10mA, IB = –1.5mA – 0.07 – 0.25 V Output voltage high level V Output voltage low level VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2
UN2113
UN211D VCC = –5V, VB = –10V, RL = 1kΩ – 0.2
UN211E VCC = –5V, VB = –6V, RL = 1kΩ – 0.2 Transition frequency f
UN2111/2114/2115 10 UN2112/2117/211T 22
Input resis­tance
UN2113/2110/211D/211E 47 UN2116/211F/211L/211N/211Z UN2118 0.51 UN2119 1 UN211H/211M/211V 2.2
I
I
V
V
R
CBO
CEO
EBO
T
CBO
CEO
FE
CE(sat)
OH
OL
1
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
VCB = –50V, IE = 0 – 0.1 µA VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0
IC = –10mA, IE = 0 –50 V IC = –2mA, IB = 0 –50 V
160 460
VCE = –10V, IC = –5mA 30
IC = –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
(–30%) 4.7 (+30%) kΩ
– 0.2
–1.0
mA
V
* hFE rank classification (UN2115/2116/2117/2110)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
Page 3
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor
Electrical Characteristics (continued) (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
UN2111/2112/2113/211L 0.8 1.0 1.2 UN2114 0.17 0.21 0.25 UN2118/2119 0.08 0.1 0.12 UN211D 4.7
Resis­tance ratio
UN211E 2.14 UN211F/211T R1/R UN211H 0.17 0.22 0.27 UN211M 0.047 UN211N 0.1 UN211V 1.0 UN211Z 0.21
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
2
0.47
3
Page 4
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
Characteristics charts of UN2111
)
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
IB=–1.0mA
CB
–0.9mA
f=1MHz
I
E
Ta=25˚C
Ta=25˚C
–0.8mA
–0.7mA –0.6mA –0.5mA
–0.4mA –0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
C
IC/IB=10
Ta=75˚C
160
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
)
IN
) V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
Ta=75˚C
25˚C
–25˚C
)
VO=–0.2V Ta=25˚C
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
4
–30
–10
Output current I
–
3
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1.0–0.8–0.6
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–1 –3 –10 –30 –100
)
Page 5
Transistors with built-in Resistor
Characteristics charts of UN2112
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
IB=–1.0mA
–0.9mA
CB
–0.8mA
f=1MHz
I
E
Ta=25˚C
Ta=25˚C
–0.7mA
–0.6mA
–0.5mA –0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
)
IN
) V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN2113
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
Ta=25˚C
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–30
–10
–3
–1
–0.3
–0.1
–0.1 –0.3
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
— I
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
VCE=–10V
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
Ta=75˚C
25˚C
–25˚C
)
5
Page 6
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN2114
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
IB=–1.0mA
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
–0.9mA
–0.8mA
Ta=25˚C
–0.7mA
–0.6mA –0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–30
–10
–3
–1
–0.3
–0.1
–0.1 –0.3
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
— I
VO=–5V Ta=25˚C
C
Ta=75˚C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
6
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
VO=–5V Ta=25˚C
)
–1.4–1.2–1.0–0.8–0.6
–1000
–300
)
–100
V
(
IN
–30
–10
–3
Input voltage V
–1
–0.3
–0.1
–0.1 –0.3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
Page 7
Transistors with built-in Resistor
Characteristics charts of UN2115
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
IB=–1.0mA
0
0 –12–2 –10–4 –8–6
–0.9mA
–0.8mA
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CB
f=1MHz
I
E
Ta=25˚C
Ta=25˚C
–0.7mA –0.6mA
–0.5mA –0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
)
–25˚C
–0.01
–0.1 –0.3
Collector current IC (mA
25˚C
–1 –3 –10 –30 –100
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
C
Ta=75˚C
IC/IB=10
400
FE
300
200
100
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
–1 –3
)
IN
) V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN2116
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
IB=–1.0mA
–0.9mA
–0.8mA
Ta=25˚C
–0.7mA
–0.6mA –0.5mA –0.4mA
–0.3mA
–0.2mA
–0.1mA
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–30
–10
–3
–1
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
— I
25˚C
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
7
Page 8
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Cob — V
6
)
pF
(
5
ob
4
3
2
1
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN2117
— V
I
C
CE
–120
–100
) mA
(
C
–80
–60
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Ta=25˚C
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
Input voltage VIN (V
–30
–10
–3
–1
V
CE(sat)
— I
C
VO=–5V Ta=25˚C
)
IC/IB=10
Ta=75˚C
–1.4–1.2–1.0–0.8–0.6
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
400
FE
300
200
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
C
VCE=–10V
Ta=75˚C
)
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
–0.3mA –0.2mA
–0.1mA
f=1MHz
I
=0
E
Ta=25˚C
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
Collector current IC (mA
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
25˚C
–25˚C
–1 –3 –10 –30 –100
IO — V
IN
VO=–5V Ta=25˚C
Input voltage VIN (V
25˚C
100
–25˚C
Forward current transfer ratio h
0
–1 –3
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–1.4–1.2–1.0–0.8–0.6
–0.01
–0.1 –0.3
)
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
)
8
Page 9
Transistors with built-in Resistor
Characteristics charts of UN2118
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 –8–6
IB=–1.0mA
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
–0.9mA
–0.8mA
CB
Ta=25˚C
–0.7mA
–0.6mA –0.5mA
–0.4mA –0.3mA –0.2mA
–0.1mA
f=1MHz
I
=0
E
Ta=25˚C
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
)
–25˚C
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
25˚C
C
IC/IB=10
Ta=75˚C
160
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
)
IN
) V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN2119
— V
I
C
–0.9mA
–0.8mA
CE
–0.7mA
Ta=25˚C
–0.6mA –0.5mA
–0.4mA –0.3mA –0.2mA –0.1mA
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
IB=–1.0mA
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
–30
–10
Output current I
–3
–1
)
)
–0.4
Input voltage VIN (V
V
— I
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
CE(sat)
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
160
FE
120
80
40
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
9
Page 10
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
) pF
(
ob
Cob — V
6
5
4
3
2
1
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN2110
— V
I
C
CE
–120
IB=–1.0mA
–0.9mA
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
–0.8mA
–0.7mA
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
–0.6mA
–0.5mA
–0.4mA
Ta=25˚C
–0.3mA
–0.2mA
–0.1mA
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–30
–10
–3
–1
25˚C
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
— I
VO=–5V Ta=25˚C
C
Ta=75˚C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
10
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
VO=–5V Ta=25˚C
)
–1.4–1.2–1.0–0.8–0.6
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
Page 11
Transistors with built-in Resistor
Characteristics charts of UN211D
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–60
–50
) mA
(
–40
C
–30
–20
Collector current I
–10
IB=–1.0mA
–0.9mA
–0.4mA
0
0 –12–2 –10–4 –8–6
–0.8mA
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
–0.6mA
–0.5mA
CE
–0.7mA
CB
Ta=25˚C
–0.3mA –0.2mA
–0.1mA
f=1MHz
I
=0
E
Ta=25˚C
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
Ta=75˚C
IN
C
IC/IB=10
VO=–5V Ta=25˚C
160
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
)
–100
–30
)
–10
V
(
IN
–3
–1
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C –25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN211E
— V
I
C
–0.5mA
–0.4mA
CE
–0.6mA
Ta=25˚C
–0.3mA –0.2mA
–0.1mA
–60
IB=–1.0mA
–0.9mA
–50
) mA
(
–40
C
–30
–20
Collector current I
–10
0
–0.8mA –0.7mA
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
–30
–10
Output current I
–3
–1
–1.5
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
— I
25˚C
–4.0–3.5–3.0–2.5–2.0
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
Ta=75˚C
VCE=–10V
25˚C –25˚C
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
11
Page 12
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN211F
— V
I
C
CE
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
IB=–1.0mA
–0.9mA
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
–0.8mA
–0.7mA
–0.6mA
Ta=25˚C
–0.5mA –0.4mA
–0.3mA –0.2mA
–0.1mA
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–1.5
)
–100
)
V
(
CE(sat)
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–30
–10
–3
–1
25˚C
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
— I
VO=–5V Ta=25˚C
C
Ta=75˚C
–4.0–3.5–3.0–2.5–2.0
)
IC/IB=10
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
160
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C –25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
12
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
VO=–5V Ta=25˚C
)
–1.4–1.2–1.0–0.8–0.6
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
Page 13
Transistors with built-in Resistor
Characteristics charts of UN211H
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–120
–100
) mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
CB
Ta=25˚C
IB=–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
f=1MHz I
=0
E
Ta=25˚C
V
— I
CE(sat)
–100
)
V
(
CE(sat)
–10
–1
–0.1
Collector to emitter saturation voltage V
–0.01
–1 –3
)
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
–100
)
–10
V
(
IN
–1
Ta=75˚C
C
O
IC/IB=10
VO=–0.2V Ta=25˚C
240
FE
200
160
120
80
40
Forward current transfer ratio h
0
–0.1 –0.3
)
hFE — I
C
VCE=–10V
Ta=75˚C 25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
)
2
1
Collector output capacitance C
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
Characteristics charts of UN211L
— V
I
C
–240
–200
) mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
Ta=25˚C
IB=–1.0mA
–0.8mA
–0.6mA
–0.4mA
–0.2mA
Input voltage V
–0.1
–0.01
–0.1 –0.3
)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–1 –3
)
–1 –3 –10 –30 –100
Output current IO (mA
V
— I
CE(sat)
25˚C
–10 –30 –100 –300 –1000
C
IC/IB=10
Ta=75˚C
–25˚C
Collector current IC (mA
)
hFE — I
240
FE
200
160
120
80
40
Forward current transfer ratio h
0
–1 –3
)
Ta=75˚C
25˚C
Collector current IC (mA
C
VCE=–10V
–25˚C
–10 –30 –100 –300 –1000
)
13
Page 14
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
f=1MHz I
=0
E
Ta=25˚C
Collector output capacitance C
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
Characteristics charts of UN211M
— V
I
C
CE
240
200
) mA
(
160
C
120
80
Collector current I
40
0
0 –12–2 –10–4 –8–6
IB=–1.0mA
–0.9mA
Collector to emitter voltage VCE (V
–0.8mA
–0.7mA
Ta=25˚C
–0.6mA
–0.5mA –0.4mA –0.3mA
–0.2mA –0.1mA
VIN — I
–100
)
–10
V
(
IN
–1
Input voltage V
–0.1
–0.01
–0.1 –0.3
)
)
V
(
CE(sat)
–0.03
–0.01
–0.003
Collector to emitter saturation voltage V
–0.001
)
Output current IO (mA
V
CE(sat)
–10
–3
–1
–0.3
–1 –3
25˚C
–25˚C
–10 –30 –100 –300 –1000
–0.1
Collector current IC (mA
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
)
— I
C
IC/IB=10
Ta=75˚C
)
hFE — I
C
500
FE
400
300
200
100
VCE=–10V
Ta=75˚C 25˚C –25˚C
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
) pF
(
Cob — V
10
8
ob
6
4
2
CB
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
14
f=1MHz
I
=0
E
Ta=25˚C
)
–4
10
)
–3
10
µA
(
O
–2
10
–1
10
Output current I
1 –0.4
Input voltage VIN (V
IO — V
IN
VO=–5V Ta=25˚C
–1.4–1.2–1.0–0.8–0.6
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
)
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
Page 15
Transistors with built-in Resistor
Characteristics charts of UN211N
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–200
–175
)
–150
mA
(
C
–125
–100
–75
–50
Collector current I
–25
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
CB
Ta=25˚C
IB=–1.0mA
–0.9mA –0.8mA –0.7mA
–0.6mA –0.5mA
–0.4mA –0.3mA –0.2mA
–0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
— I
CE(sat)
–10
)
V
(
CE(sat)
–1
Ta=75˚C
25˚C
–0.1
–25˚C
Collector to emitter saturation voltage V
–0.01
–1
)
–10 –100 –1000
Collector current IC (mA
IO — V
–10000
)
–1000
µA
(
O
–100
C
IC/IB=10
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
–1
)
IN
) V
(
IN
–100
–10
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –100 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0
–1
–10 –100
Collector to base voltage VCB (V
Characteristics charts of UN211T
— V
I
C
CE
–200
–175
)
–150
mA
(
C
–125
–100
–75
–50
Collector current I
–25
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Ta=25˚C
IB=–1.0mA
–0.9mA –0.8mA –0.7mA –0.6mA
–0.5mA –0.4mA
–0.3mA –0.2mA –0.1mA
–10
Output current I
–1
–0.4
)
)
V
(
CE(sat)
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–10
–1
Ta=75˚C
–0.1
25˚C
–25˚C
–1
–10 –100 –1000
Collector current IC (mA
— I
C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
)
Input voltage V
–0.1
–0.01
–0.1
–1 –10 –100
Output current IO (mA
hFE — I
C
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
–1
Ta=75˚C
25˚C
–25˚C
–10 –100 –1000
VCE=–10V
Collector current IC (mA
)
)
15
Page 16
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
IO — V
IN
–10000
)
–1000
µA
(
O
–100
–10
Output current I
–1
–0.4
Input voltage VIN (V
VO=–5V Ta=25˚C
)
Characteristics charts of UN211V
— V
I
C
CE
–12
–10
)
mA
(
–8
C
–6
–4
Collector current I
–2
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Ta=25˚C
IB=–1.0mA
–0.9mA –0.8mA
–0.7mA –0.6mA –0.5mA
–0.4mA –0.3mA
–0.2mA –0.1mA
VIN — I
–100
)
–10
V
(
IN
–1
Input voltage V
–0.1
–1.4–1.2–1–0.8–0.6
–0.01
–0.1
Output current IO (mA
V
–10
)
V
(
CE(sat)
–1
–0.1
Collector to emitter saturation voltage V
–0.01
–1
)
25˚C
–10 –100 –1000
Collector current IC (mA
O
VO=–0.2V Ta=25˚C
–1 –10 –100
)
— I
CE(sat)
C
IC/IB=10
Ta=75˚C
–25˚C
)
hFE — I
C
12
FE
Forward current transfer ratio h
Ta=75˚C
10
8
6
4
2
0
–1
–25˚C
VCE=–10V
25˚C
–10 –100
Collector current IC (mA
)
–10000
)
–1000
µA
(
O
–100
–10
Output current I
–1
–0.4
Input voltage VIN (V
16
IO — V
IN
VO=–5V Ta=25˚C
)
VIN — I
O
–100
)
–10
V
(
IN
–1
Input voltage V
–0.1
–1.4–1.2–1–0.8–0.6
–0.01
–0.1
–1 –10 –100
Output current IO (mA
VO=–0.2V Ta=25˚C
)
Page 17
Transistors with built-in Resistor
Characteristics charts of UN211Z
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–200
–175
)
–150
mA
(
C
–125
–100
–75
–50
Collector current I
–25
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
CB
Ta=25˚C
IB=–1.0mA
–0.9mA –0.8mA –0.7mA –0.6mA –0.5mA
–0.4mA –0.3mA –0.2mA
–0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
— I
CE(sat)
–10
)
V
(
CE(sat)
–1
Ta=75˚C
–0.1
25˚C
–25˚C
Collector to emitter saturation voltage V
–0.01
–1
)
–10 –100 –1000
Collector current IC (mA
IO — V
–10000
)
–1000
µA
(
O
–100
C
IC/IB=10
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
–1
)
IN
) (
V
IN
–100
–10
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –100 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0
–1
–10 –100
Collector to base voltage VCB (V
–10
Output current I
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1–0.8–0.6
)
Input voltage V
–0.1
–0.01
–0.1
Output current IO (mA
–1 –10 –100
)
17
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