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UNR2111
Datasheet (Panasonic)
17 pgs241.64 Kb0
Datasheet (Panasonic)
18 pgs290.71 Kb0

Datasheet UNR2111 Datasheet (Panasonic)

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Page 1
Transistors with built-in Resistor
2.8
+0.2 –0.3
1.5
+0.25 –0.05
0.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
B
C
R1
R2
E
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
(UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z)
Silicon PNP epitaxial planer transistor
For digital circuits
Features
●
Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
●
Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
Resistance by Part Number
●
UNR211 1 6A 10kΩ 10kΩ
●
UNR2112 6B 22kΩ 22kΩ
●
UNR2113 6C 47kΩ 47kΩ
●
UNR2114 6D 10kΩ 47kΩ
●
UNR2115 6E 10kΩ —
●
UNR2116 6F 4.7kΩ —
●
UNR2117 6H 22kΩ —
●
UNR2118 6I 0.51kΩ 5.1kΩ
●
UNR2119 6K 1kΩ 10kΩ
●
UNR2110 6L 47kΩ —
●
UNR211D 6M 47kΩ 10kΩ
●
UNR211E 6N 47kΩ 22kΩ
●
UNR211F 6O 4.7k Ω 10kΩ
●
UNR211H 6P 2.2kΩ 10kΩ
●
UNR211L 6Q 4.7kΩ 4.7kΩ
●
UNR211M EI 2.2kΩ 47kΩ
●
UNR211N EW 4.7kΩ 47kΩ
●
UNR211T EY 22kΩ 47kΩ
●
UNR211V FC 2.2kΩ 2.2kΩ
●
UNR211Z FE 4.7kΩ 22kΩ
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage Collector current I Total power dissipation P Junction temperature T Storage temperature T
Marking Symbol (R1)(R
CBO
V
CEO
C
T
j
stg
–100 mA
–55 to +150 ˚C
)
2
1:Base 2:Emitter EIAJ:SC-59 3:Collector Mini Type Package
Internal Connection
–50 V –50 V
200 mW 150 ˚C
Note)The part numbers in the parenthesis show conventional part number.
Unit: mm
1
Page 2
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UNR211 1 – 0.5 UNR2112/2114/211E/211D/211M/211N/211T UNR2113 – 0.1
Emitter cutoff current
UNR2115/2116/2117/2110 – 0.01 UNR211F/211H UNR2119 –1.5 UNR2118/211L/211V –2.0
UNR211Z – 0.4 Collector to base voltage V Collector to emitter voltage V
UNR211 1 35
UNR2112/211E 60
UNR2113/2114/211M 80
Forward current transfer ratio
UNR2115*/2116*/2117*/2110*
UNR2119/211F/211D/211H h
UNR2118/211L 20
UNR211N/211T 80 400
UNR211V 6 20
UNR211Z 60 200 Collector to emitter saturation voltage
UNR211V IC = –10mA, IB = –1.5mA – 0.07 – 0.25 V Output voltage high level V Output voltage low level VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2
UNR2113
UNR211D VCC = –5V, VB = –10V, RL = 1kΩ – 0.2
UNR211E VCC = –5V, VB = –6V, RL = 1kΩ – 0.2 Transition frequency f
UNR2111/2114/2115 10 UNR2112/2117/211T 22
Input resis­tance
UNR2113/2110/211D/211E 47 UNR2116/211F/21 1L/211N/211Z UNR2118 0.51 UNR2119 1 UNR211H/211M/211V 2.2
I
I
V
V
R
CBO
CEO
EBO
T
CBO
CEO
FE
CE(sat)
OH
OL
1
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
VCB = –50V, IE = 0 – 0.1 µA VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0
IC = –10mA, IE = 0 –50 V IC = –2mA, IB = 0 –50 V
160 460
VCE = –10V, IC = –5mA 30
IC = –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
(–30%) 4.7 (+30%) kΩ
– 0.2
–1.0
mA
V
* hFE rank classification (UNR2115/2116/2117/2110)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
Page 3
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor
Electrical Characteristics (continued) (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
UNR2111/2112/2113/211L 0.8 1.0 1.2 UNR2114 0.17 0.21 0.25 UNR2118/2119 0.08 0.1 0.12 UNR211D 4.7
Resis­tance ratio
UNR211E 2.14 UNR211F/211T R1/R UNR211H 0.17 0.22 0.27 UNR211M 0.047 UNR211N 0.1 UNR211V 1.0 UNR211Z 0.21
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
2
0.47
3
Page 4
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
Characteristics charts of UNR2111
)
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
IB=–1.0mA
CB
–0.9mA
f=1MHz
I
E
Ta=25˚C
Ta=25˚C
–0.8mA
–0.7mA –0.6mA –0.5mA
–0.4mA –0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
C
IC/IB=10
Ta=75˚C
160
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
)
IN
)
V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
Ta=75˚C
25˚C
–25˚C
)
VO=–0.2V Ta=25˚C
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
4
–30
–10
Output current I
–
3
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1.0–0.8–0.6
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–1 –3 –10 –30 –100
)
Page 5
Transistors with built-in Resistor
Characteristics charts of UNR2112
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
IB=–1.0mA
–0.9mA
CB
–0.8mA
f=1MHz
I
E
Ta=25˚C
Ta=25˚C
–0.7mA
–0.6mA
–0.5mA –0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
)
IN
)
V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR2113
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
Ta=25˚C
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
)
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
–30
–10
–3
–1
–25˚C
–0.1 –0.3
V
— I
CE(sat)
25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
VCE=–10V
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
Ta=75˚C
25˚C
–25˚C
)
5
Page 6
Transistors with built-in Resistor
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR2114
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
IB=–1.0mA
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
–0.9mA
–0.8mA
Ta=25˚C
–0.7mA
–0.6mA –0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
)
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.1 –0.3
V
CE(sat)
25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
— I
VO=–5V Ta=25˚C
C
Ta=75˚C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
6
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
VO=–5V Ta=25˚C
)
–1.4–1.2–1.0–0.8–0.6
–1000
–300
)
–100
V
(
IN
–30
–10
–3
Input voltage V
–1
–0.3
–0.1
–0.1 –0.3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
Page 7
Transistors with built-in Resistor
Characteristics charts of UNR2115
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
IB=–1.0mA
0
0 –12–2 –10–4 –8–6
–0.9mA
–0.8mA
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CB
f=1MHz
I
E
Ta=25˚C
Ta=25˚C
–0.7mA –0.6mA
–0.5mA –0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
)
–25˚C
–0.01
–0.1 –0.3
Collector current IC (mA
25˚C
–1 –3 –10 –30 –100
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
C
Ta=75˚C
IC/IB=10
400
FE
300
200
100
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
–1 –3
)
IN
)
V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR2116
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
IB=–1.0mA
–0.9mA
–0.8mA
Ta=25˚C
–0.7mA
–0.6mA –0.5mA –0.4mA
–0.3mA
–0.2mA
–0.1mA
)
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
–30
–10
–3
–1
–0.1 –0.3
V
— I
CE(sat)
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
7
Page 8
Transistors with built-in Resistor
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Cob — V
6
)
pF
(
5
ob
4
3
2
1
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR2117
— V
I
C
CE
–120
–100
) mA
(
C
–80
–60
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Ta=25˚C
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
Input voltage VIN (V
–30
–10
–3
–1
V
CE(sat)
— I
C
VO=–5V Ta=25˚C
)
IC/IB=10
Ta=75˚C
–1.4–1.2–1.0–0.8–0.6
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
400
FE
300
200
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
C
VCE=–10V
Ta=75˚C
)
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
–0.3mA –0.2mA
–0.1mA
f=1MHz
I
=0
E
Ta=25˚C
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
Collector current IC (mA
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
25˚C
–25˚C
–1 –3 –10 –30 –100
IO — V
IN
VO=–5V Ta=25˚C
Input voltage VIN (V
25˚C
100
–25˚C
Forward current transfer ratio h
0
–1 –3
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–1.4–1.2–1.0–0.8–0.6
–0.01
–0.1 –0.3
)
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
)
8
Page 9
Transistors with built-in Resistor
Characteristics charts of UNR2118
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 –8–6
IB=–1.0mA
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
–0.9mA
–0.8mA
CB
Ta=25˚C
–0.7mA
–0.6mA –0.5mA
–0.4mA –0.3mA –0.2mA
–0.1mA
f=1MHz
I
=0
E
Ta=25˚C
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
)
–25˚C
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
25˚C
C
IC/IB=10
Ta=75˚C
160
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
)
IN
)
V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR2119
— V
I
C
–0.9mA
–0.8mA
CE
–0.7mA
Ta=25˚C
–0.6mA –0.5mA
–0.4mA –0.3mA –0.2mA –0.1mA
)
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
IB=–1.0mA
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
–30
–10
Output current I
–3
–1
)
–0.4
Input voltage VIN (V
V
— I
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
CE(sat)
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
160
FE
120
80
40
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
9
Page 10
Transistors with built-in Resistor
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
) pF
(
ob
Cob — V
6
5
4
3
2
1
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR2110
— V
I
C
CE
–120
IB=–1.0mA
–0.9mA
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
–0.8mA
–0.7mA
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
–0.6mA
–0.5mA
–0.4mA
Ta=25˚C
–0.3mA
–0.2mA
–0.1mA
)
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
–30
–10
–3
–1
–25˚C
–0.1 –0.3
V
CE(sat)
25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
— I
VO=–5V Ta=25˚C
C
Ta=75˚C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
10
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
VO=–5V Ta=25˚C
)
–1.4–1.2–1.0–0.8–0.6
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
Page 11
Transistors with built-in Resistor
Characteristics charts of UNR211D
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–60
–50
) mA
(
–40
C
–30
–20
Collector current I
–10
IB=–1.0mA
–0.9mA
–0.4mA
0
0 –12–2 –10–4 –8–6
–0.8mA
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
–0.6mA
–0.5mA
CE
–0.7mA
CB
Ta=25˚C
–0.3mA –0.2mA
–0.1mA
f=1MHz
I
=0
E
Ta=25˚C
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
Ta=75˚C
IN
C
IC/IB=10
VO=–5V Ta=25˚C
160
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
)
–100
–30
)
–10
V
(
IN
–3
–1
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C –25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR211E
— V
I
C
–0.5mA
–0.4mA
CE
–0.6mA
Ta=25˚C
–0.3mA –0.2mA
–0.1mA
)
–60
IB=–1.0mA
–0.9mA
–50
) mA
(
–40
C
–30
–20
Collector current I
–10
0
–0.8mA –0.7mA
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
–30
–10
Output current I
–3
–1
–1.5
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.1 –0.3
V
— I
CE(sat)
25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
–4.0–3.5–3.0–2.5–2.0
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
Ta=75˚C
VCE=–10V
25˚C –25˚C
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
11
Page 12
Transistors with built-in Resistor
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR211F
— V
I
C
CE
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
IB=–1.0mA
–0.9mA
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
–0.8mA
–0.7mA
–0.6mA
Ta=25˚C
–0.5mA –0.4mA
–0.3mA –0.2mA
–0.1mA
)
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–1.5
)
–100
)
V
(
CE(sat)
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
–30
–10
–3
–1
–25˚C
–0.1 –0.3
V
CE(sat)
25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
— I
VO=–5V Ta=25˚C
C
Ta=75˚C
–4.0–3.5–3.0–2.5–2.0
)
IC/IB=10
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
160
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C –25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
12
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
VO=–5V Ta=25˚C
)
–1.4–1.2–1.0–0.8–0.6
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
Page 13
Transistors with built-in Resistor
Characteristics charts of UNR211H
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–120
–100
) mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
CB
Ta=25˚C
IB=–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
f=1MHz I
=0
E
Ta=25˚C
V
— I
CE(sat)
–100
)
V
(
CE(sat)
–10
–1
–0.1
Collector to emitter saturation voltage V
–0.01
–1 –3
)
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
–100
)
–10
V
(
IN
–1
Ta=75˚C
C
O
IC/IB=10
VO=–0.2V Ta=25˚C
240
FE
200
160
120
80
40
Forward current transfer ratio h
0
–0.1 –0.3
)
hFE — I
C
VCE=–10V
Ta=75˚C 25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
)
2
1
Collector output capacitance C
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
Characteristics charts of UNR211L
— V
I
C
–240
–200
) mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
Ta=25˚C
IB=–1.0mA
–0.8mA
–0.6mA
–0.4mA
–0.2mA
)
Input voltage V
–0.1
–0.01
–0.1 –0.3
)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–1 –3
–1 –3 –10 –30 –100
Output current IO (mA
V
— I
CE(sat)
25˚C
–10 –30 –100 –300 –1000
C
IC/IB=10
Ta=75˚C
–25˚C
Collector current IC (mA
)
hFE — I
240
FE
200
160
120
80
40
Forward current transfer ratio h
0
–1 –3
)
Ta=75˚C
25˚C
Collector current IC (mA
C
VCE=–10V
–25˚C
–10 –30 –100 –300 –1000
)
13
Page 14
Transistors with built-in Resistor
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
f=1MHz I
=0
E
Ta=25˚C
Collector output capacitance C
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
Characteristics charts of UNR211M
— V
I
C
CE
240
200
) mA
(
160
C
120
80
Collector current I
40
0
0 –12–2 –10–4 –8–6
IB=–1.0mA
–0.9mA
Collector to emitter voltage VCE (V
–0.8mA
–0.7mA
Ta=25˚C
–0.6mA
–0.5mA –0.4mA –0.3mA
–0.2mA –0.1mA
)
VIN — I
–100
)
–10
V
(
IN
–1
Input voltage V
–0.1
–0.01
–0.1 –0.3
)
)
V
(
CE(sat)
–0.03
–0.01
–0.003
Collector to emitter saturation voltage V
–0.001
Output current IO (mA
V
CE(sat)
–10
–3
–1
–0.3
–1 –3
25˚C
–25˚C
–10 –30 –100 –300 –1000
–0.1
Collector current IC (mA
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
)
— I
C
IC/IB=10
Ta=75˚C
)
hFE — I
C
500
FE
400
300
200
100
VCE=–10V
Ta=75˚C 25˚C –25˚C
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
) pF
(
Cob — V
10
8
ob
6
4
2
CB
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
14
f=1MHz
I
=0
E
Ta=25˚C
)
–4
10
)
–3
10
µA
(
O
–2
10
–1
10
Output current I
1
–0.4
Input voltage VIN (V
IO — V
IN
VO=–5V Ta=25˚C
–1.4–1.2–1.0–0.8–0.6
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
)
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
Page 15
Transistors with built-in Resistor
Characteristics charts of UNR211N
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–200
–175
)
–150
mA
(
C
–125
–100
–75
–50
Collector current I
–25
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
CB
Ta=25˚C
IB=–1.0mA
–0.9mA –0.8mA –0.7mA
–0.6mA –0.5mA
–0.4mA –0.3mA –0.2mA
–0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
— I
CE(sat)
–10
)
V
(
CE(sat)
–1
Ta=75˚C
25˚C
–0.1
–25˚C
Collector to emitter saturation voltage V
–0.01
–1
)
–10 –100 –1000
Collector current IC (mA
IO — V
–10000
)
–1000
µA
(
O
–100
C
IC/IB=10
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
–1
)
IN
) V
(
IN
–100
–10
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –100 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0
–1
–10 –100
Collector to base voltage VCB (V
Characteristics charts of UNR211T
— V
I
C
CE
–200
–175
)
–150
mA
(
C
–125
–100
–75
–50
Collector current I
–25
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Ta=25˚C
IB=–1.0mA
–0.9mA –0.8mA –0.7mA –0.6mA
–0.5mA –0.4mA
–0.3mA –0.2mA –0.1mA
)
–10
Output current I
–1
–0.4
)
)
V
(
CE(sat)
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
–10
–1
–0.1
25˚C
–1
V
— I
CE(sat)
Ta=75˚C
–25˚C
–10 –100 –1000
C
Collector current IC (mA
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
)
Input voltage V
–0.1
–0.01
–0.1
–1 –10 –100
Output current IO (mA
hFE — I
C
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
–1
Ta=75˚C
25˚C
–25˚C
–10 –100 –1000
VCE=–10V
Collector current IC (mA
)
)
15
Page 16
Transistors with built-in Resistor
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
IO — V
IN
–10000
)
–1000
µA
(
O
–100
–10
Output current I
–1
–0.4
Input voltage VIN (V
VO=–5V Ta=25˚C
)
Characteristics charts of UNR211V
— V
I
C
CE
–12
–10
)
mA
(
–8
C
–6
–4
Collector current I
–2
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Ta=25˚C
IB=–1.0mA
–0.9mA –0.8mA
–0.7mA –0.6mA –0.5mA
–0.4mA –0.3mA
–0.2mA –0.1mA
)
VIN — I
–100
)
–10
V
(
IN
–1
Input voltage V
–0.1
–1.4–1.2–1–0.8–0.6
–0.01
–0.1
Output current IO (mA
V
–10
)
V
(
CE(sat)
–1
–0.1
Collector to emitter saturation voltage V
–0.01
–1
25˚C
–10 –100 –1000
Collector current IC (mA
O
VO=–0.2V Ta=25˚C
–1 –10 –100
)
— I
CE(sat)
C
IC/IB=10
Ta=75˚C
–25˚C
)
hFE — I
C
12
FE
Forward current transfer ratio h
Ta=75˚C
10
8
6
4
2
0
–1
–25˚C
VCE=–10V
25˚C
–10 –100
Collector current IC (mA
)
–10000
)
–1000
µA
(
O
–100
–10
Output current I
–1
–0.4
Input voltage VIN (V
16
IO — V
IN
VO=–5V Ta=25˚C
)
VIN — I
O
–100
)
–10
V
(
IN
–1
Input voltage V
–0.1
–1.4–1.2–1–0.8–0.6
–0.01
–0.1
–1 –10 –100
Output current IO (mA
VO=–0.2V Ta=25˚C
)
Page 17
Transistors with built-in Resistor
Characteristics charts of UNR211Z
UNR2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–200
–175
)
–150
mA
(
C
–125
–100
–75
–50
Collector current I
–25
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
CB
Ta=25˚C
IB=–1.0mA
–0.9mA –0.8mA –0.7mA –0.6mA –0.5mA
–0.4mA –0.3mA –0.2mA
–0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
— I
CE(sat)
–10
)
V
(
CE(sat)
–1
Ta=75˚C
–0.1
25˚C
–25˚C
Collector to emitter saturation voltage V
–0.01
–1
)
–10 –100 –1000
Collector current IC (mA
IO — V
–10000
)
–1000
µA
(
O
–100
C
IC/IB=10
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
–1
)
IN
) (
V
IN
–100
–10
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –100 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0
–1
–10 –100
Collector to base voltage VCB (V
–10
Output current I
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1–0.8–0.6
)
Input voltage V
–0.1
–0.01
–0.1
Output current IO (mA
–1 –10 –100
)
17
Page 18
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2001 MAR
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