Page 1
Small Signal Transistor Arrays
1
2
4
3
5
7
8
6
16
15
14
13
12
11
10
9
UN225
Transistor array to drive the small motor
Features
■
●
Small and lightweight
●
Low power consumption (low V
●
Low-voltage drive
●
With 8 elements incorporated (SO–16)
transistor used)
CE(sat)
Unit: mm
7.7±0.3
5.5±0.3
1
1.5±0.1
0.8
16
Applications
■
●
Video cameras
●
Cameras
●
Portable CD players
●
Small motor drive circuits in general for electronic equipment.
Absolute Maximum Ratings (Ta=25±2˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
V
Emitter to base voltage V
Collector current I
CBO
CEO
EBO
C
±10 V
±10 V
±7V
±0.5 A
Total power dissipation PT* 0.5 W
Junction temperature T
Storage temperature T
j
stg
150 ˚C
–55 to +150 ˚C
Note: ± marks used above: +: NPN part, –: PNP part
* TC = 25˚C only when the elements are active
6.5±0.3
16-0.3±0.1
8
0.5
0 to 0.1
45˚
0.5±0.2
Internal Connection
9
12˚
14-0.75±0.1
12˚
–0.05
+0.1
0.2
6˚
SO–16 Package
6˚
1
Page 2
Small Signal Transistor Arrays
Electrical Characteristics (Ta=25±2˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
Forward voltage (DC) V
CBO
CBO
CEO
EBO
FE
V
CE(sat)1
T
ob
F
(NPN) VCB = 7V 1
(PNP) VCB = –7V –1
(NPN) IC = 10µA10
(PNP) IC = –10µA –10
(NPN) IC = 1mA 10
(PNP) IC = –1mA –10
(NPN) IE = 10µA7
(PNP) IE = –10µA–7
(NPN) VCE = 2V, IC = 0.2A* 200 800
(PNP) VCE = –2V, IC = – 0.2A* 200 800
(NPN) IC = 0.2A, IB = 2mA 0.2
(PNP) IC = – 0.2A, IB = –2mA – 0.2
(NPN) VCB = 6V, IE = –50mA, f = 200MHz
(PNP) VCB = –6V, IE = 50mA, f = 200MHz
120
120
(NPN) VCB = 6V, IE = 0, f = 1MHz 25
(PNP) VCB = –6V, IE = 0, f = 1MHz 35
(NPN) IF = 0.5A 1.3
(PNP) IF = – 0.5A –1.3
UN225
µA
V
V
V
V
MHz
pF
V
*Pulse measurement
Characteristics charts of PNP transistor block
— Ta IC — V
P
T
0.6
)
0.5
W
(
T
0.4
0.3
0.2
0.1
Total power dissipation P
–1.2
–1.0
)
A
(
C
Collector current I
IB=–6mA
–0.8
–0.6
–0.4
–0.2
–5mA
CE
Ta=25˚C
–4mA
–3mA
–2mA
–1mA
IC — V
–1.2
–1.0
)
A
(
–0.8
C
–0.6
–0.4
Collector current I
–0.2
Ta=75˚C –25˚C
BE
VCE=–2V
25˚C
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
2
0
0 –12–2 –10–4 –8–6
)
Collector to emitter voltage VCE (V
)
0
0–2.4–0.4 –2.0–0.8 –1.6–1.2
Base to emitter voltage VBE (V
)
Page 3
Small Signal Transistor Arrays UN225
V
— I
–10
)
V
(
–3
CE(sat)
–0.3
–0.1
–0.03
–0.01
–0.003
CE(sat)
–1
Ta=75˚C
25˚C
–25˚C
C
IC/IB=100
600
FE
500
400
300
200
100
Forward current transfer ratio h
Collector to emitter saturation voltage V
–0.001
–0.01 –0.03
–0.1 –0.3 –1 –3 –10
Collector current IC (A
)
Characteristics charts of NPN transistor block
Ta=75˚C
0
–0.01 –0.03
hFE — I
25˚C
–25˚C
–0.1 –0.3 –1 –3 –10
C
Collector current IC (A
VCE=–2V
)
Cob — V
120
CB
)
pF
(
100
ob
80
60
40
20
Collector output capacitance C
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
f=1MHz
I
=0
E
Ta=25˚C
)
— Ta IC — V
P
T
0.6
)
0.5
W
(
T
0.4
0.3
0.2
0.1
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
V
— I
CE(sat)
10
)
V
(
3
CE(sat)
1
0.3
0.1
Ta=75˚C
25˚C
–25˚C
C
IC/IB=100
CE
1.2
1.0
)
A
(
0.8
C
0.6
0.4
IB=3.0mA
Collector current I
0.2
0
012210486
)
Collector to emitter voltage VCE (V
hFE — I
600
FE
500
Ta=75˚C
25˚C
400
–25˚C
300
Ta=25˚C
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
)
C
VCE=2V
1.2
1.0
)
A
(
0.8
C
0.6
0.4
Collector current I
0.2
0
02.40.4 2.00.8 1.61.2
60
)
pF
(
50
ob
40
30
IC — V
Ta=75˚C –25˚C
BE
VCE=2V
25˚C
Base to emitter voltage VBE (V
Cob — V
CB
f=1MHz
I
=0
E
Ta=25˚C
)
0.03
0.01
0.003
Collector to emitter saturation voltage V
0.001
0.01 0.03
0.1 0.3 1 3 10
Collector current IC (A
)
200
100
Forward current transfer ratio h
0
0.01 0.03
0.1 0.3 1 3 10
Collector current IC (A
20
10
Collector output capacitance C
0
)
3 10 30 100
1
Collector to base voltage VCB (V
)
3
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